摘要:
An emission map of a circuit to be tested for alterations is obtained by measuring the physical circuit to be tested. An emission map of a reference circuit is obtained by measuring a physical reference circuit or by simulating the emissions expected from the reference circuit. The emission map of the circuit to be tested is compared with the emission map of the reference circuit, to determine presence of alterations in the circuit to be tested, as compared to the reference circuit.
摘要:
A method, system and computer program product are disclosed for creating an image from a device. In one embodiment, the method comprises acquiring first and second images from the device, said first and second images having overlapping portions, and estimating said overlapping portions to obtain an approximate shift amount to align approximately said first and second images. This method further comprises analyzing the overlapping portions, using a defined cross-correlation algorithm, to calculate a precise shift amount to align the first and second images; and using said precise shift amount to join the first and second images together. In one embodiment, an optical system is used to acquire the images, a stage is used to move either the device or the optical system to acquire the first and second images, and the estimating includes using movement of the stage to estimate the overlapping areas.
摘要:
A mechanism for diagnosing broken scan chains based on leakage light emission is provided. An image capture mechanism detects light emission from leakage current in complementary metal oxide semiconductor (CMOS) devices. The diagnosis mechanism identifies devices with unexpected light emission. An unexpected amount of light emission may indicate that a transistor is turned off when it should be turned on or vice versa. All possible inputs may be tested to determine whether a problem exists with transistors in latches or with transistors in clock buffers. Broken points in the scan chain may then be determined based on the locations of unexpected light emission.
摘要:
Systems and methods for making electrical measurements using optical emissions include positioning a sensor/photodetector to measure radiation emissions from devices to be tested. Radiation emission information is collected from the device to be tested during electrical operation. Characteristic features of the radiation emission information are determined, and differences between the characteristic features are deciphered. Based on the differences, models are employed to determine electrical properties of the device, especially operational characteristics.
摘要:
Apparatus and methods are provided for packaging IC (integrated circuit) chips to enable both optical access to the back side of an IC chip and electrical access to the front side of the IC chip.
摘要:
Systems and methods for making electrical measurements using optical emissions include positioning a sensor/photodetector to measure radiation emissions from devices to be tested. Radiation emission information is collected from the device to be tested during electrical operation. Characteristic features of the radiation emission information are determined, and differences between the characteristic features are deciphered. Based on the differences, models are employed to determine electrical properties of the device, especially operational characteristics.
摘要:
Techniques for on-chip detection of integrated circuit power supply noise are disclosed. By way of example, a technique for monitoring a power supply line in an integrated circuit comprises the following steps/operations. A first signal and a second signal are preconditioned. The first signal is representative of a voltage of the power supply line being monitored. The second signal is representative of a voltage of a reference power supply line. Preconditioning comprises shifting respective levels of the voltages such that the voltages are within an input voltage range of comparator circuitry. Then, the preconditioned first signal and the preconditioned second signal are compared in accordance with the comparator circuitry. Comparison comprises detecting when a difference exists between the voltage level of the preconditioned first signal and the voltage level of the preconditioned second signal.
摘要:
A scan chain latch circuit is provided. The scan chain latch circuit includes a first shift register latch, a second shift register latch, and a third shift register latch. A first multiplexor is connected between the first and second shift register latches, and a second multiplexor is connected between the second and third shift register latches. Each multiplexor is configured for implementing a jump mode such that a logic value may be passed via the first multiplexor from the first shift register latch to the third shift register latch.
摘要:
The present disclosure relates to a secure device having a physical unclonable function and methods of manufacturing such a secure device. The device includes a substrate and at least one high-k/metal gate device formed on the substrate. The at least one high-k/metal gate device represents the physical unclonable function. In some cases, the at least one high-k/metal gate device may be subjected a variability enhancement. In some cases, the secure device may include a measurement circuit for measuring a property of the at least one high-k/metal gate device.
摘要:
A structure for locating a fault in a semiconductor chip. The chip includes a substrate on a dielectric interconnect. A first electrical response image of the chip, which includes a spot representing the fault, is overlayed on a first reflection image for monochromatic light in an optical path from an optical microscope through a SIL/NAIL and into the chip. The index of refraction of the substrate exceeds that of the dielectric interconnect and is equal to that of the SIL/NAIL. A second electrical response image of the chip is overlayed on a second reflection image for the monochromatic light in an optical path in which an optical stop prevents all subcritical angular components of the monochromatic light from being incident on the SIL/NAIL. If the second electrical response image includes or does not include the spot, then the fault is in the substrate or the dielectric interconnect, respectively.