公开(公告)号：US08505417B2

公开(公告)日：2013-08-13

申请号：US13136336

申请日：2011-08-01

Applicant: Daivd Hui ,  Chien-Liang Lin

Inventor： Daivd Hui ,  Chien-Liang Lin

IPC: B25B13/06

CPC classification number: B25B13/06

Abstract: A socket includes a plurality of protrusions circumferentially disposed around a circular top opening in a top portion of the socket, whereby upon insertion of a driving (or coupling) shaft of a spanner with square head portion into the square hole in the socket, the square head portion of the driving shaft will be respectively biased or thrusted by the protrusions and then smoothly guided or slid through a sloping surface tapered downwardly radially from the circular opening into the square hole for quickly coupling the driving shaft of the spanner with the square hole in the socket.A socket further includes plural bottom protrusions disposed around a circular bottom opening in a bottom portion of the socket, and eighteen faces formed in a hexagonal bottom hole of the socket for helping a quick coupling of a nut or bolt into the bottom hole of the socket.

公开(公告)号：US08501634B2

公开(公告)日：2013-08-06

申请号：US13045291

申请日：2011-03-10

Applicant: Shao-Wei Wang ,  Gin-Chen Huang ,  Tsuo-Wen Lu ,  Chien-Liang Lin ,  Yu-Ren Wang

Inventor： Shao-Wei Wang ,  Gin-Chen Huang ,  Tsuo-Wen Lu ,  Chien-Liang Lin ,  Yu-Ren Wang

IPC: H01L21/31

CPC classification number: H01L29/513 ,  H01L21/28185 ,  H01L21/28202 ,  H01L29/518

Abstract: A gate structure and a method for fabricating the same are described. A substrate is provided, and a gate dielectric layer is formed on the substrate. The formation of the gate dielectric layer includes depositing a silicon nitride layer on the substrate by simultaneously introducing a nitrogen-containing gas and a silicon-containing gas. A gate is formed on the gate dielectric layer, so as to form the gate structure.

Abstract translation: 对栅极结构及其制造方法进行说明。 提供衬底，并且在衬底上形成栅极电介质层。 栅电介质层的形成包括通过同时引入含氮气体和含硅气体在衬底上沉积氮化硅层。 栅极形成在栅极介电层上，以形成栅极结构。

公开(公告)号：US20130171837A1

公开(公告)日：2013-07-04

申请号：US13342191

申请日：2012-01-02

Applicant: Te-Lin Sun ,  Chien-Liang Lin ,  Yu-Ren Wang ,  Ying-Wei Yen

Inventor： Te-Lin Sun ,  Chien-Liang Lin ,  Yu-Ren Wang ,  Ying-Wei Yen

IPC: H01L21/318

CPC classification number: H01L21/02247 ,  H01L21/02329 ,  H01L21/3185 ,  H01L21/76224 ,  H01L21/76237

Abstract: A semiconductor process includes the following steps. A substrate having a recess is provided. A decoupled plasma nitridation process is performed to nitride the surface of the recess for forming a nitrogen containing liner on the surface of the recess. A nitrogen containing annealing process is then performed on the nitrogen containing liner.

Abstract translation: 半导体工艺包括以下步骤。 提供具有凹部的基板。 进行解耦等离子体氮化处理以在凹部的表面上氮化用于形成含氮衬垫的凹部的表面。 然后对含氮衬垫进行含氮退火工艺。

公开(公告)号：US08394688B2

公开(公告)日：2013-03-12

申请号：US13169129

申请日：2011-06-27

Applicant: Chien-Liang Lin ,  Ying-Wei Yen ,  Yu-Ren Wang

Inventor： Chien-Liang Lin ,  Ying-Wei Yen ,  Yu-Ren Wang

IPC: H01L21/336 ,  H01L21/8234

CPC classification number: H01L29/7834 ,  H01L21/28035 ,  H01L21/28247 ,  H01L29/165 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/66636

Abstract: A repair layer forming process includes the following steps. Firstly, a substrate is provided, and a gate structure is formed on the substrate, wherein the gate structure at least includes a gate dielectric layer and a gate conductor layer. Then, a nitridation process is performed to form a nitrogen-containing superficial layer on a sidewall of the gate structure. Then, a thermal oxidation process is performed to convert the nitrogen-containing superficial layer into a repair layer. Moreover, a metal-oxide-semiconductor transistor includes a substrate, a gate dielectric layer, a gate conductor layer and a repair layer. The gate dielectric layer is formed on the substrate. The gate conductor layer is formed on the gate dielectric layer. The repair layer is at least partially formed on a sidewall of the gate conductor layer.

Abstract translation: 修复层形成方法包括以下步骤。 首先，提供衬底，并且在衬底上形成栅极结构，其中栅极结构至少包括栅极介电层和栅极导体层。 然后，进行氮化处理以在栅极结构的侧壁上形成含氮表面层。 然后，进行热氧化处理以将含氮表层转化为修复层。 此外，金属氧化物半导体晶体管包括基板，栅极电介质层，栅极导体层和修复层。 栅极电介质层形成在基板上。 栅极导体层形成在栅极电介质层上。 修复层至少部分地形成在栅极导体层的侧壁上。

公开(公告)号：US08232605B2

公开(公告)日：2012-07-31

申请号：US12337541

申请日：2008-12-17

Applicant: Chien-Liang Lin ,  Yu-Ren Wang ,  Wu-Chun Kao ,  Ying-Hsuan Li ,  Ying-Wei Yen ,  Shu-Yen Chan

Inventor： Chien-Liang Lin ,  Yu-Ren Wang ,  Wu-Chun Kao ,  Ying-Hsuan Li ,  Ying-Wei Yen ,  Shu-Yen Chan

IPC: H01L29/76

CPC classification number: H01L21/823807 ,  H01L21/823857

Abstract: The present invention relates to a method for gate leakage reduction and Vt shift control, in which a first ion implantation is performed on PMOS region and NMOS region of a substrate to implant fluorine ions, carbon ions, or both in the gate dielectric or the semiconductor substrate, and a second ion implantation is performed only on the NMOS region of the substrate to implant fluorine ions, carbon ions, or both in the gate dielectric or the semiconductor substrate in the NMOS region, with the PMOS region being covered by a mask layer. Thus, the doping concentrations obtained by the PMOS region and the NMOS region are different to compensate the side effect caused by the different equivalent oxide thickness and to avoid the Vt shift.

Abstract translation: 本发明涉及一种用于栅极泄漏减小和Vt移位控制的方法，其中在衬底的PMOS区域和NMOS区域上执行第一离子注入以在栅极电介质或半导体中注入氟离子，碳离子或两者 衬底，并且仅在衬底的NMOS区域上执行第二离子注入，以在NMOS区域中的栅极电介质或半导体衬底中注入氟离子，碳离子或两者，其中PMOS区被掩模层覆盖 。 因此，由PMOS区域和NMOS区域获得的掺杂浓度不同，以补偿不同等效氧化物厚度引起的副作用并避免Vt偏移。

公开(公告)号：US20110291590A1

公开(公告)日：2011-12-01

申请号：US13103100

申请日：2011-05-08

Applicant: Chien-Liang Lin ,  Sergey Gaitukevich

Inventor： Chien-Liang Lin ,  Sergey Gaitukevich

IPC: H05B37/02 ,  G05F3/02

CPC classification number: H02M1/4225 ,  H02M2001/0022 ,  H02M2003/1555 ,  Y02B70/126

Abstract: Switching mode power supplies (SMPS) and control methods used thereof are disclosed. An exemplifying SMPS is coupled to control an inductive device. The SMPS comprises a voltage divider and a peak controller. The voltage divider comprises a resistor and a controllable resistor connected in series through a connection node. The resistance of the controllable resistor is variable, controlled by a control signal. The voltage divider generates a limiting signal at the connection node based on a line voltage at a line voltage power node. The peak controller controls a peak current flowing through the inductive device according to the limiting signal.

Abstract translation: 公开了开关电源（SMPS）及其使用的控制方法。 耦合的示例性SMPS来控制感应装置。 SMPS包括分压器和峰值控制器。 分压器包括通过连接节点串联连接的电阻器和可控电阻器。 可控电阻的电阻是可变的，由控制信号控制。 分压器基于线路电压电源节点处的线路电压在连接节点处产生限制信号。 峰值控制器根据限制信号控制流过电感器件的峰值电流。

公开(公告)号：US20090311542A1

公开(公告)日：2009-12-17

申请号：US12140275

申请日：2008-06-17

Applicant: Da-Sen Lin ,  Chien-Liang Lin

Inventor： Da-Sen Lin ,  Chien-Liang Lin

IPC: B32B15/04 ,  C25D5/02

CPC classification number: C25D5/022 ,  Y10T428/31678

Abstract: A metal shell with printing patterns has a metal body, a printing layer and an electroplating layer. The metal body has an outer surface and an area. The printing layer is attached to the outer surface of the metal body to form the printing patterns and has an area smaller than that of the metal body. The electroplating layer is attached to the outer surface of the metal body at a region beside the printing layer.

Abstract translation: 具有印刷图案的金属外壳具有金属体，印刷层和电镀层。 金属体具有外表面和区域。 印刷层附着在金属体的外表面上以形成印刷图案，并且其面积小于金属体的面积。 电镀层在印刷层旁边的区域附着在金属体的外表面上。

公开(公告)号：US20090116153A1

公开(公告)日：2009-05-07

申请号：US11934789

申请日：2007-11-05

Applicant: Chien-Liang Lin ,  Yu-Chuan Liu

Inventor： Chien-Liang Lin ,  Yu-Chuan Liu

IPC: H02H7/10

CPC classification number: H02M3/33507 ,  H02M1/32

Abstract: A power conversion system and over-load protection device thereof includes a first detection circuit, a charging/discharging circuit, and a second detection circuit. The discharging/charging circuit charges based on a feedback signal relative to output of the power conversion system. A switching-disabling control signal is produced based on the charge of the discharging/charging circuit, to disable the power conversion system.

Abstract translation: 电力转换系统及其过载保护装置包括第一检测电路，充电/放电电路和第二检测电路。 放电/充电电路基于相对于电力转换系统的输出的反馈信号进行充电。 基于放电/充电电路的电荷产生开关禁止控制信号，以禁用电力转换系统。

公开(公告)号：US20090064186A1

公开(公告)日：2009-03-05

申请号：US12204780

申请日：2008-09-04

Applicant: Chien-Liang Lin

Inventor： Chien-Liang Lin

IPC: G06F9/54 ,  G06F9/44

CPC classification number: G06F9/54

Abstract: A mobile device and a method for sharing a hardware device thereof are provided. Two operation systems are executed on the present mobile device simultaneously, and an embedded controller is configured to communicate among the two operation systems and a shared hardware device of the mobile device. When one of the operation systems encodes an operating command into a uniform message and transmits the uniform message to the embedded controller, the uniform message is decoded into the operating command by the embedded controller such that the hardware device operates according to the decoded operating command. On the other hand, when the embedded controller receives input data from the hardware device, the embedded controller encodes the input data into the uniform message and transmits the uniform message to one of the operation systems. The operation system receiving the uniform message decodes the uniform message into the input data.

Abstract translation: 提供了一种用于共享其硬件设备的移动设备和方法。 两个操作系统同时在当前移动设备上执行，并且嵌入式控制器被配置为在两个操作系统和移动设备的共享硬件设备之间进行通信。 当操作系统中的一个操作系统将操作命令编码为均匀消息并将统一消息发送到嵌入式控制器时，由嵌入式控制器将均匀消息解码为操作命令，使得硬件设备根据解码的操作命令进行操作。 另一方面，当嵌入式控制器从硬件设备接收输入数据时，嵌入式控制器将输入数据编码成统一消息，并将统一消息发送到操作系统之一。 接收统一消息的操作系统将均匀消息解码为输入数据。

公开(公告)号：US20090058887A1

公开(公告)日：2009-03-05

申请号：US11971198

申请日：2008-01-08

Applicant: Chien-Liang Lin

Inventor： Chien-Liang Lin

IPC: G09G5/10

CPC classification number: G09G5/003 ,  G06F3/14 ,  G09G3/3406 ,  G09G5/10 ,  G09G2320/064 ,  G09G2320/0653 ,  G09G2360/144

Abstract: A method for gradually adjusting screen brightness when switching an operating system is provided. The method is used for gradually adjusting the brightness of a screen of an electronic device by a controller thereof when the electronic device is switched from a first operating system to a second operating system. First, an operating system switching signal is received. Then, a first brightness value of the first operating system is obtained. The screen brightness is gradually adjusted from the first brightness value to a predetermined second brightness value. Afterwards, the first operating system is switched to the second operating system, and the screen brightness is further adjusted from the second brightness value back to the first brightness value. Accordingly, a user can sense the switching of the operating system more intuitively and has enough time to get used to the change of the screen brightness and the displayed frame.

Abstract translation: 提供了一种在切换操作系统时逐渐调节屏幕亮度的方法。 当电子设备从第一操作系统切换到第二操作系统时，该方法用于通过其控制器逐渐调节电子设备的屏幕的亮度。 首先，接收操作系统切换信号。 然后，获得第一操作系统的第一亮度值。 屏幕亮度从第一亮度值逐渐调整到预定的第二亮度值。 之后，将第一操作系统切换到第二操作系统，并且将屏幕亮度从第二亮度值进一步调整回第一亮度值。 因此，用户可以更直观地感测操作系统的切换，并且具有足够的时间来适应屏幕亮度和所显示的帧的改变。