利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

60 条记录 (耗时 0.043 秒)

    Laser scanning optical apparatus having exclusive optical elements at varying distances from receiving surfaces
    44.
    发明授权
    Laser scanning optical apparatus having exclusive optical elements at varying distances from receiving surfaces 有权
    激光扫描光学装置具有距离接收表面不同距离的专用光学元件

    公开(公告)号：US07515168B2

    公开(公告)日：2009-04-07

    申请号：US11519769

    申请日：2006-09-13

    申请人： Kenji Takeshita ,  Atsushi Ohata ,  Hajime Taniguchi

    发明人： Kenji Takeshita ,  Atsushi Ohata ,  Hajime Taniguchi

    IPC分类号： B41J15/14 ,  B41J27/00

    CPC分类号： B41J2/473 ,  G02B26/123

    摘要： A laser scanning optical apparatus wherein a plural number of beams are deflected by one polygon mirror and are scanned on respective corresponding photosensitive drums via a scanning optical system. The scanning optical system has a first scanning lens which transmits all the beams, exclusive second scanning lenses which transmit exclusively the respective beams and plane mirrors for reflecting the beams. The second scanning lenses are located such that at least one of the second scanning lenses is at a distance from the corresponding photosensitive drum on which the beam transmitted by the at least one of the second scanning lenses is scanned and that another second scanning lens is at another distance from the corresponding photosensitive drum on which the beams transmitted by the another second scanning lens is scanned. For example, at least one of the exclusive optical elements is at a distance from the corresponding photosensitive drum, and the other exclusive optical elements are at another distance from the respective corresponding photosensitive drums. Alternatively, the exclusive optical elements are at mutually different distances from the respective corresponding photosensitive drums.

    摘要翻译： 一种激光扫描光学装置，其中多个光束被一个多面镜偏转并且经由扫描光学系统在相应的对应的感光鼓上进行扫描。 扫描光学系统具有透射所有光束的第一扫描透镜，专门发送各个光束的专用第二扫描透镜和用于反射光束的平面镜。 第二扫描透镜被定位成使得至少一个第二扫描透镜距离相应的感光鼓一个距离，在该感光鼓上扫描由至少一个第二扫描透镜发射的光束，并且另一个第二扫描透镜处于 距离相应的感光鼓的另一个距离，其上扫描由另一个第二扫描透镜传输的光束。 例如，至少一个专用光学元件距离对应的感光鼓有一定距离，而其他专用光学元件距离各个相应的感光鼓相距一定距离。 或者，专用光学元件与相应的相应的感光鼓相距不同的距离。

    Vacuum plasma processor method
    45.
    发明授权
    Vacuum plasma processor method 失效
    真空等离子体处理器方法

    公开(公告)号：US06897156B2

    公开(公告)日：2005-05-24

    申请号：US10347363

    申请日：2003-01-21

    申请人： Tuqiang Ni ,  Kenji Takeshita ,  Tom Choi ,  Frank Y. Lin

    发明人： Tuqiang Ni ,  Kenji Takeshita ,  Tom Choi ,  Frank Y. Lin

    IPC分类号： H05H1/46 ,  B01J3/00 ,  B01J19/08 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/302

    CPC分类号： H01J37/321

    摘要： 200 mm and 300 mm wafers are processed in vacuum plasma processing chambers that are the same or have the same geometry. Substantially planar excitation coils having different geometries for the wafers of different sizes excite ionizable gas in the chamber to a plasma by supplying electromagnetic fields to the plasma through a dielectric window at the top of the chamber. Both coils include plural symmetrical, substantially circular turns coaxial with a center point of the coil and at least one turn that is asymmetrical with respect to the coil center point. Both coils include four turns, with r.f. excitation being applied to the turn that is closest to the coil center point. The turn that is third farthest from the center point is asymmetric in the coil used for 200 mm wafers. The two turns closest to the coil center point are asymmetric in the coil used for 300 mm wafers.

    摘要翻译： 200mm和300mm晶片在相同或具有相同几何形状的真空等离子体处理室中进行处理。 对于不同尺寸的晶片，具有不同几何形状的基本上平面的激励线圈通过在腔室的顶部处的电介质窗口向等离子体提供电磁场，从而激发腔室中的可电离气体到等离子体。 两个线圈包括与线圈的中心点同轴的多个对称的基本圆形的匝和至少一个相对于线圈中心点不对称的匝。 两个线圈包括四圈，r.f. 激励被施加到最接近线圈中心点的转弯。 距离中心点第三远的转弯在用于200 mm晶圆的线圈中是不对称的。 在线圈中心点最近的两个转弯在用于300毫米晶圆的线圈中是不对称的。

    Moveable barrier for multiple etch processes
    46.
    发明授权
    Moveable barrier for multiple etch processes 有权
    多个蚀刻工艺的可移动屏障

    公开(公告)号：US06709547B1

    公开(公告)日：2004-03-23

    申请号：US09347583

    申请日：1999-06-30

    申请人： Tuqiang Ni ,  Kenji Takeshita ,  Brian K. McMillin

    发明人： Tuqiang Ni ,  Kenji Takeshita ,  Brian K. McMillin

    IPC分类号： C23F100

    CPC分类号： H01L21/67069 ,  Y10S156/915

    摘要： A process chamber for a plasma processing apparatus is provided in which etch uniformity is maintained in both chemically driven and ion driven processes. The process chamber utilizes a barrier whose position relative to a wafer may be changed. During chemically driven processes, the barrier may be established so as to substantially prevent the diffusion of neutral reactants from regions outside the perimeter of the wafer. During ion driven processes, the barrier may be moved (e.g., withdrawn) so as to not compromise the ion driven etch.

    摘要翻译： 提供了一种用于等离子体处理装置的处理室，其中在化学驱动和离子驱动工艺中保持蚀刻均匀性。 处理室利用可相对于晶片的位置改变的势垒。 在化学驱动的过程中，可以建立阻挡层，以便基本上防止中性反应物从晶片周边外的区域的扩散。 在离子驱动过程中，阻挡层可以移动（例如，退出），以便不损害离子驱动的蚀刻。

    Selectivity control in a plasma processing system
    47.
    发明授权
    Selectivity control in a plasma processing system 有权
    等离子体处理系统中的选择性控制

    公开(公告)号：US08222155B2

    公开(公告)日：2012-07-17

    申请号：US11969833

    申请日：2008-01-04

    申请人： Kenji Takeshita ,  Odette Turmel ,  Felix Kozakevich ,  Eric Hudson

    发明人： Kenji Takeshita ,  Odette Turmel ,  Felix Kozakevich ,  Eric Hudson

    IPC分类号： H01L21/302

    CPC分类号： H01L21/76811 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/31144

    摘要： A method in a plasma processing system for etching a feature through a given layer on a semiconductor substrate. The method includes placing the substrate in a plasma processing chamber of the plasma processing system. The method also includes flowing an etchant gas mixture into the plasma processing chamber, the etchant gas mixture being configured to etch the given layer. The method additionally includes striking a plasma from the etchant source gas. Furthermore, the method includes etching the feature at least partially through the given layer while applying a bias RF signal to the substrate, the bias RF signal having a bias RF frequency of between about 45 MHz and about 75 MHz. The bias RF signal further has a bias RF power component that is configured to cause the etch feature to be etched with an etch selectivity to a second layer of the substrate that is higher than a predefined selectivity threshold.

    摘要翻译： 一种用于通过半导体衬底上的给定层蚀刻特征的等离子体处理系统中的方法。 该方法包括将基板放置在等离子体处理系统的等离子体处理室中。 该方法还包括将蚀刻剂气体混合物流动到等离子体处理室中，蚀刻剂气体混合物被配置为蚀刻给定层。 该方法还包括从蚀刻剂源气体冲击等离子体。 此外，该方法包括至少部分地通过给定层蚀刻特征，同时向衬底施加偏置RF信号，偏置RF信号具有在约45MHz和约75MHz之间的偏置RF频率。 偏置RF信号还具有偏置RF功率分量，该偏置RF功率分量被配置为使得蚀刻特征被蚀刻以对于高于预定义的选择性阈值的衬底的第二层的蚀刻选择性。

    Optically pumped disk-type solid state laser oscillator and optically pumped disk-type solid state laser system
    49.
    发明授权
    Optically pumped disk-type solid state laser oscillator and optically pumped disk-type solid state laser system 有权
    光泵浦式固态激光振荡器和光泵式盘式固态激光系统

    公开(公告)号：US07773641B2

    公开(公告)日：2010-08-10

    申请号：US12003178

    申请日：2007-12-20

    申请人： Kenji Takeshita ,  Shinya Ishii

    发明人： Kenji Takeshita ,  Shinya Ishii

    IPC分类号： H01S3/30 ,  H01S3/07 ,  H01S3/08

    CPC分类号： H01S3/09415 ,  H01S3/042 ,  H01S3/0604 ,  H01S3/0621 ,  H01S3/0627 ,  H01S3/0915 ,  H01S3/094038

    摘要： An optically pumped disk type solid state laser oscillator includes: a cylindrical shape thin film laser gain medium having a through-hole; a ring mirror whose surface is opposing to a side surface of the thin film laser gain medium; a conical mirror arranged in the through-hole and reflects a light from the ring mirror to a direction perpendicular to the thin film laser gain medium where an output mirror is arranged. The ring mirror, the conical mirror and the output mirror compose a resonator for oscillating a laser beam to be outputted from the output mirror.

    摘要翻译： 光泵式固态激光振荡器包括：具有通孔的圆柱形薄膜激光增益介质; 表面与薄膜激光增益介质的侧表面相对的环形镜; 布置在所述通孔中的圆锥镜，并将来自所述环形镜的光反射到与设置有输出镜的所述薄膜激光增益介质垂直的方向。 环形镜，锥形镜和输出镜组成用于振荡从输出镜输出的激光束的谐振器。

    Method for selectivity control in a plasma processing system
    50.
    发明授权
    Method for selectivity control in a plasma processing system 有权
    等离子体处理系统中的选择性控制

    公开(公告)号：US07517801B1

    公开(公告)日：2009-04-14

    申请号：US10881410

    申请日：2004-06-29

    申请人： Kenji Takeshita

    发明人： Kenji Takeshita

    IPC分类号： H01L21/311 ,  H01L21/768

    CPC分类号： H01L21/31116 ,  H01L21/31138 ,  H01L21/76811

    摘要： A method in a plasma processing system for etching a feature through a given layer on a semiconductor substrate. The method includes placing the substrate in a plasma processing chamber of the plasma processing system. The method also includes flowing an etchant gas mixture into the plasma processing chamber, the etchant gas mixture being configured to etch the given layer. The method additionally includes striking a plasma from the etchant source gas. Furthermore, the method includes etching the feature at least partially through the given layer while applying a bias RF signal to the substrate, the bias RF signal having a bias RF frequency of between about 45 MHz and about 75 MHz. The bias RF signal further has a bias RF power component that is configured to cause the etch feature to be etched with an etch selectivity to a second layer of the substrate that is higher than a predefined selectivity threshold.

    摘要翻译： 一种用于通过半导体衬底上的给定层蚀刻特征的等离子体处理系统中的方法。 该方法包括将基板放置在等离子体处理系统的等离子体处理室中。 该方法还包括将蚀刻剂气体混合物流动到等离子体处理室中，蚀刻剂气体混合物被配置为蚀刻给定层。 该方法还包括从蚀刻剂源气体冲击等离子体。 此外，该方法包括至少部分地通过给定层蚀刻特征，同时向衬底施加偏置RF信号，偏置RF信号具有在约45MHz和约75MHz之间的偏置RF频率。 偏置RF信号还具有偏置RF功率分量，该偏置RF功率分量被配置为使得蚀刻特征被蚀刻以对于高于预定义的选择性阈值的衬底的第二层的蚀刻选择性。