Abstract:
Provided is a liquid crystal device. The liquid crystal device includes a first substrate and a second substrate facing each other, a first electrode disposed between the first substrate and the second substrate and adjacent to the first substrate, a second electrode disposed between the first substrate and the second substrate and adjacent to the second substrate, a first alignment film disposed between the first electrode and the second electrode and adjacent to the first electrode, a second alignment film disposed between the first electrode and the second electrode and adjacent to the second electrode, and a liquid crystal layer disposed between the first alignment film and the second alignment film, wherein the liquid crystal layer includes a liquid crystal portion containing liquid crystal molecules, and a hydrophobic portion containing a hydrophobic material, the liquid crystal portion and the hydrophobic portion are phase-separated from each other, and the hydrophobic portion includes fluorine.
Abstract:
Provided is an active camouflage device including a reflective layer, a first electrode disposed on the reflective layer, a second electrode facing the first electrode, and an electrolyte provided between the first and second electrodes. The first electrode includes a transparent electrode, and the second electrode includes a metal mesh.
Abstract:
A color display device includes a plurality of pixels. Each of the pixels includes a first transparent electrode and a second transparent electrode, opposing to each other, a polymer layer between the first transparent electrode and the second transparent electrode, a first coloring material dispersed in the polymer layer, liquid crystals provided in the polymer layer, and a second coloring material dispersed in the liquid crystals. The first coloring material and the second coloring material presents different colors, and each of the first coloring material and the second coloring material includes at least one of a red coloring material, a green coloring material, a blue coloring material, a yellow coloring material, a cyan coloring material, and a magenta coloring material.
Abstract:
Provided is a semiconductor device. The semiconductor device includes a second semiconductor pattern disposed on the substrate and configured to provide a channel region, and a first semiconductor pattern disposed between the substrate and the second semiconductor pattern, wherein the first semiconductor pattern includes a channel region that is a portion in contact with the second semiconductor pattern and source/drain regions that are portions exposed by the second semiconductor pattern.
Abstract:
Provided are a display device, a method of fabricating the display device, and a method of fabricating an image sensor device. The method of fabricating the display device includes preparing a substrate including a cell array area and a peripheral circuit area, forming a silicon layer on the peripheral circuit area of the substrate, forming oxide layers on the cell array area and the peripheral circuit area of the substrate, forming gate dielectric layers on the silicon layer and the oxide layers, forming the gate electrodes on the gate dielectric layers, wherein the gate electrodes expose both ends of the silicon layer and both ends of the oxide layers, and injecting dopant into both ends of the silicon layer and both ends of the oxide layers at the same time.
Abstract:
Provided is a display device and a method of manufacturing the same. The display device includes a reflective display part including a first cathode electrode and a first anode electrode and a liquid crystal layer, a light emitting display part including a second cathode electrode and a second anode electrode and a light emission film, and a thin film transistor part being electrically connected to the first and second anode electrodes. The light emitting display part further includes a bank disposed on one side of the second anode electrode between the second anode electrode and the light emission film.
Abstract:
Provided is a single input level shifter. The single input level shifter includes: an input unit applying a power voltage to a first node in response to an input signal and applying the input signal to a second node in response to a reference signal; a bootstrapping unit applying the power voltage to the second node according to a voltage level of the first node; and an output unit applying the input signal to an output terminal in response to the reference signal and applying the power voltage to the output terminal according to the voltage level of the first node, wherein the bootstrapping unit includes a capacitor between the first and second nodes, and when the input signal is shifted from a first voltage level to a second voltage level, the bootstrapping unit raises the voltage level of the first node to a level higher than the power voltage.
Abstract:
Disclosed are dual mode display devices and methods of manufacturing the same. The dual mode display device may include a first substrate, a first electrode on the first substrate, a second substrate opposite to the first electrode and the first substrate, a second electrode between the second substrate and the first electrode, a third electrode between the first electrode and the second electrode, an optic switching layer between the first electrode and the third electrode, and an organic light-emitting layer between the second electrode and the third electrode.
Abstract:
A dual mode display apparatus according to the inventive concept includes a lower substrate, a first lower electrode on the lower substrate, a light switching layer on the first lower electrode, a first upper electrode on the light switching layer, a passivation layer on the first upper electrode, a contact plug connected to the first upper electrode and penetrating the passivation layer, a second lower electrode on the contact plug and the passivation layer, an organic light-emitting layer on the second lower electrode, a second upper electrode on the organic light-emitting layer, and an upper substrate on the second upper electrode.
Abstract:
A thin film transistor includes a first gate electrode on a substrate, a gate insulating film on the first gate electrode, a first active layer on the gate insulating film, a drain electrode on one side of the first active layer, a sidewall spacer on a side wall of the drain electrode, and a first source electrode provided on the other side of the first active layer and a sidewall of the sidewall spacer.