公开(公告)号：US20080001179A1

公开(公告)日：2008-01-03

申请号：US11821902

申请日：2007-06-26

Applicant: Francois Roy

Inventor： Francois Roy

IPC: H01L31/113 ,  H01L31/18

CPC classification number: H01L27/14627 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685 ,  H01L31/02161 ,  H01L31/0232

Abstract: An image sensor including a substrate of a semiconductor material having first and second opposite surfaces; at least one photodiode formed in the substrate on the first surface side and intended to be lit through the second surface; a stacking of insulating layers covering the first surface; and conductive regions formed at the stacking level. The sensor further includes a transparent insulating layer at least partly covering the second surface; a transparent conductive layer at least partly covering the transparent insulating layer; and circuitry for biasing the conductive layer.

Abstract translation: 一种图像传感器，包括具有第一和第二相对表面的半导体材料的衬底; 至少一个光电二极管，其形成在第一表面侧的基板中并且旨在通过第二表面点亮; 堆叠覆盖第一表面的绝缘层; 以及形成在层叠层的导电区域。 传感器还包括至少部分地覆盖第二表面的透明绝缘层; 至少部分覆盖透明绝缘层的透明导电层; 以及用于偏置导电层的电路。

公开(公告)号：US20070187733A1

公开(公告)日：2007-08-16

申请号：US11706928

申请日：2007-02-14

Applicant: Cyril Fellous ,  Nicolas Hotellier ,  Christophe Aumont ,  Francois Roy

Inventor： Cyril Fellous ,  Nicolas Hotellier ,  Christophe Aumont ,  Francois Roy

IPC: H01L31/113

CPC classification number: H01L27/14625 ,  G02B6/1221 ,  H01L27/14621 ,  H01L27/14627

Abstract: A photodetector including a photodiode formed in a semiconductor substrate and a waveguide element formed of a block of a high-index material extending above the photodiode in a thick layer of a dielectric superposed to the substrate, the thick layer being at least as a majority formed of silicon oxide and the block being formed of a polymer of the general formula R1R2R3SiOSiR1R2R3 where R1, R2, and R3 are any carbonaceous or metal substituents and where one of R1, R2, or R3 is a carbonaceous substituent having at least four carbon atoms and/or at least one oxygen atom.

Abstract translation: 一种光电探测器，其包括形成在半导体衬底中的光电二极管，以及波导元件，所述波导元件由高折射率材料块形成，所述波导元件在与所述衬底叠加的电介质的厚层中的所述光电二极管之上延伸，所述厚层至少大部分形成 的氧化硅，该嵌段由通式为R 1，R 2，R 3，SiOS 1 R 1，R 2，R 3，R 3，R 3， R 2 R 3，其中R 1，R 2，和R 3， 是任何碳质或金属取代基，其中R 1，R 2或R 3中的一个是具有至少四个碳原子的碳取代基 和/或至少一个氧原子。

公开(公告)号：US20070145246A1

公开(公告)日：2007-06-28

申请号：US11605847

申请日：2006-11-28

Applicant: Francois Roy ,  Thomas Girault

Inventor： Francois Roy ,  Thomas Girault

IPC: H01L31/00

CPC classification number: H01L27/14625 ,  G02B6/12004 ,  G02B6/1228 ,  G02B6/136 ,  G02B6/4298 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14685

Abstract: An integrated circuit having a photosensitive cell with an entry face, a photosensitive element and at least two elements forming a light guide and placed between the entry face and the photosensitive element. The second element is located between the first element and the entry face such that the two elements guide the light coming from the entry face onto the photosensitive element and each element forms a light guide. The inner volume has a first surface located on the same side as the photosensitive element, a second surface located on the same side as the entry face, and a lateral surface joining said first surface to said second surface and separating the inner volume from the outer volume. The first surface of the inner volume of the second element has a smaller area than that of the second surface of the inner volume of the first element.

Abstract translation: 一种集成电路，其具有具有入射面的感光单元，感光元件和至少两个元件，形成光导并且放置在入射面和感光元件之间。 第二元件位于第一元件和入口面之间，使得两个元件将来自入口面的光引导到感光元件上，并且每个元件形成光导。 内部体积具有位于与感光元件相同侧的第一表面，位于与入射面相同侧的第二表面，以及将所述第一表面连接到所述第二表面的侧表面，并将内部体积与外部 卷。 第二元件的内部体积的第一表面具有比第一元件的内部容积的第二表面的面积小的面积。

公开(公告)号：US07151286B2

公开(公告)日：2006-12-19

申请号：US10875694

申请日：2004-06-24

Applicant: Francois Roy

Inventor： Francois Roy

IPC: H01L31/113

CPC classification number: H01L31/11 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14656

Abstract: A photodiode comprises three superposed doped regions, namely a first doped region adjacent to a surface (S) of a semiconductor substrate, an intermediate second doped region and a third doped region in contact with the bulk of the substrate. The bulk of the substrate and the second doped region form first and second electrodes of the photodiode, respectively. The photodiode furthermore includes a third electrode in contact with the first doped region. The third electrode comprises an intermediate portion of a first electrically conducting material, placed in contact with the first doped region, and an external connection portion of a second electrically conducting material, placed in contact with the intermediate portion.

Abstract translation: 光电二极管包括三个叠加的掺杂区域，即与半导体衬底的表面（S）相邻的第一掺杂区域，与衬底本体接触的中间第二掺杂区域和第三掺杂区域。 基板和第二掺杂区域的主体分别形成光电二极管的第一和第二电极。 光电二极管还包括与第一掺杂区域接触的第三电极。 第三电极包括与第一掺杂区域接触放置的第一导电材料的中间部分和与中间部分接触放置的第二导电材料的外部连接部分。

公开(公告)号：US20050035276A1

公开(公告)日：2005-02-17

申请号：US10883636

申请日：2004-07-01

Applicant: Francois Roy

Inventor： Francois Roy

IPC: H04N3/15 ,  H01J40/14 ,  H01L31/00

CPC classification number: H04N5/374 ,  H04N5/3597

Abstract: A method of controlling a MOS-type photodetector includes transferring electrical charge between a photodiode (12) and a sensing node (3) via a transfer transistor. The electrical potential of the sensing node (3) takes an extreme value when a maximum quantity of electrical charge is stored on the sensing node (3). During the electrical charge transfer, an electrical potential is applied to the gate electrode of a transfer transistor in such a way that the electrical potential of the channel (2) of the transfer transistor is brought to a value equal to the extreme value of the electrical potential of the sensing node (3) multiplied by a number greater than or equal to unity.

Abstract translation: 控制MOS型光电检测器的方法包括经由传输晶体管在光电二极管（12）和感测节点（3）之间转移电荷。 当感测节点（3）上存储最大电量时，感测节点（3）的电位为极值。 在电荷转移期间，将电位施加到转移晶体管的栅电极，使得转移晶体管的沟道（2）的电位达到等于电的极值的值 感测节点（3）的电位乘以大于或等于1的数字。

公开(公告)号：USD909769S1

公开(公告)日：2021-02-09

申请号：US29682363

申请日：2019-03-04

Applicant: Francois Roy

Designer： Francois Roy

公开(公告)号：US08847344B2

公开(公告)日：2014-09-30

申请号：US13483274

申请日：2012-05-30

Applicant: Francois Roy ,  Francois Leverd ,  Jens Prima

Inventor： Francois Roy ,  Francois Leverd ,  Jens Prima

IPC: H01L31/0232 ,  H01L27/146

CPC classification number: H01L27/14632 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

Abstract: An integrated imaging device includes a silicon layer provided over a dielectric multilayer. The dielectric multilayer includes a top silicon-dioxide layer, an intermediate silicon-nitride layer and a bottom silicon-dioxide layer. Imaging circuitry is formed at a frontside of the silicon layer. An isolating structure surrounds the imaging circuitry and extends from the frontside through the silicon layer and top silicon-dioxide layer into and terminating within the intermediate silicon-nitride layer. A filter for the imaging circuitry is mounted to a backside of the bottom silicon-dioxide layer. The isolating structure is formed by a trench filled with a dielectric material.

Abstract translation: 集成成像装置包括设置在电介质多层上的硅层。 电介质层包括顶部二氧化硅层，中间氮化硅层和底部二氧化硅层。 成像电路形成在硅层的前侧。 隔离结构围绕成像电路并从前侧穿过硅层和顶部二氧化硅层延伸到中间氮化硅层内并终止于中间氮化硅层内。 用于成像电路的滤光器安装在底部二氧化硅层的背面。 隔离结构由填充有电介质材料的沟槽形成。

公开(公告)号：US08674283B2

公开(公告)日：2014-03-18

申请号：US13333885

申请日：2011-12-21

Applicant: Francois Roy ,  Flavien Hirigoyen ,  Julien Michelot

Inventor： Francois Roy ,  Flavien Hirigoyen ,  Julien Michelot

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/14609 ,  H01L27/1463

Abstract: A method of fabricating an image sensor includes the steps of: forming at least two photosites in a semiconductor substrate; forming a trench between the photosites; forming a thin liner on at least the sidewalls of the trench; depositing a conductive material having a first refractive index in the trench; and forming a region surrounded by the conductive material and having a second refractive index lower than the first index of refraction within the conductive material in the trench.

Abstract translation: 制造图像传感器的方法包括以下步骤：在半导体衬底中形成至少两个光电子; 在光斑之间形成沟槽; 在至少沟槽的侧壁上形成薄衬垫; 在沟槽中沉积具有第一折射率的导电材料; 以及形成由所述导电材料围绕并且具有比所述沟槽中的导电材料内的所述第一折射率低的第二折射率的区域。

公开(公告)号：US08524522B2

公开(公告)日：2013-09-03

申请号：US12963792

申请日：2010-12-09

Applicant: Michel Marty ,  Didier Dutartre ,  Francois Roy ,  Pascal Besson ,  Jens Prima

Inventor： Michel Marty ,  Didier Dutartre ,  Francois Roy ,  Pascal Besson ,  Jens Prima

IPC: H01L21/00 ,  H01L21/46 ,  H01L31/0232 ,  H01L27/148

CPC classification number: H01L27/14687 ,  H01L21/2007 ,  H01L21/30604 ,  H01L21/76256 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/1812

Abstract: A process for producing a microelectronic device includes producing a first semiconductor substrate which includes a first layer and a second layer present between a first side and a second side of the substrate. First electronic components and an interconnecting part are produced on and above the second side. The substrate is then thinned by a first selective etch applied from the first side and stopping on the first layer followed by a second selective etch stopping on the second layer. A second substrate is attached over the interconnecting part. The electronic components may comprise optoelectronic devices which are illuminated through the second layer.

Abstract translation: 微电子器件的制造方法包括制造第一半导体衬底，该第一半导体衬底包括存在于衬底的第一侧和第二侧之间的第一层和第二层。 第一电子部件和互连部分在第二面上和上方产生。 然后通过从第一侧施加的第一选择性蚀刻将衬底减薄，并停止在第一层上，随后在第二层上进行第二选择性蚀刻停止。 第二衬底附接在互连部分上。 电子部件可以包括通过第二层照射的光电子器件。

公开(公告)号：US20120168067A1

公开(公告)日：2012-07-05

申请号：US13412656

申请日：2012-03-06

Applicant: Francois Roy

Inventor： Francois Roy

IPC: B27M1/08 ,  B32B38/04 ,  B05D3/12 ,  B32B37/12 ,  B26D3/06

CPC classification number: B32B38/0004 ,  B32B37/12 ,  B32B38/10 ,  B32B2317/16 ,  B32B2471/00 ,  Y10T156/1052 ,  Y10T156/1064 ,  Y10T156/1082 ,  Y10T428/24612

Abstract: A composite engineered wood material piece and its method of fabrication is described. The wood material piece comprises a top wood layer secured to a substrate layer by a binder. The substrate layer has a plurality of grooves formed therein from a bottom surface thereof to enhance the flexibility of the wood material piece. The grooves are spaced from one another by one or more predetermined spaced intervals and have one or more predetermined depth and width calculated to substantially eliminate the effects of telegraphy of the grooves on a top finished surface of the top wood layer.

Abstract translation: 描述了复合工程木材片及其制造方法。 木材材料包括通过粘合剂固定到基底层的顶部木层。 基材层的底面形成有多个槽，以增强木材的柔软性。 沟槽彼此隔开一个或多个预定的间隔间隔，并具有一个或多个预定的深度和宽度，以便基本上消除沟槽在顶部木材层的顶部成品表面上的电路的影响。