公开(公告)号：US06866721B2

公开(公告)日：2005-03-15

申请号：US10113750

申请日：2002-04-01

申请人： Keong-Su Lim ,  Sang-Su Kim

发明人： Keong-Su Lim ,  Sang-Su Kim

IPC分类号： H01L21/20 ,  C23C16/48 ,  H01L21/00 ,  C23C16/00 ,  H05H1/00

CPC分类号： H01L21/67115 ,  C23C16/482 ,  C23C16/488

摘要： Apparatus for a photo-induced process are provided, which implement a transparent film (instead of an optical window), to reduce light absorption loss that would result from use of an optical window. A photo-induced process apparatus eliminates problems of conventional systems which use optical windows, such as blurring an optical window and the surface of a light source, photo absorption loss due to the optical window and/or a purge cleaning gas, and dust generation by a moving part such as a flexible curtain. A photo-induced process apparatus efficiently utilizes light emitted from a light source.

摘要翻译： 提供了一种用于光诱导工艺的装置，其实现透明膜（而不是光学窗口），以减少由于使用光学窗口而导致的光吸收损失。 光感应处理装置消除了使用光学窗口的常规系统的问题，例如模糊光学窗口和光源的表面，由于光学窗口和/或吹扫清洁气体引起的光吸收损失，以及通过 诸如柔性窗帘的移动部件。 感光处理装置有效地利用从光源发出的光。

公开(公告)号：US09431537B2

公开(公告)日：2016-08-30

申请号：US14669082

申请日：2015-03-26

申请人： Shigenobu Maeda ,  Tae-Yong Kwon ,  Sang-Su Kim ,  Jae-Hoo Park

发明人： Shigenobu Maeda ,  Tae-Yong Kwon ,  Sang-Su Kim ,  Jae-Hoo Park

IPC分类号： H01L31/072 ,  H01L31/109 ,  H01L29/78 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/66 ,  H01L27/092 ,  H01L29/165

CPC分类号： H01L29/7848 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0886 ,  H01L27/0922 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/785

摘要： Methods of forming a semiconductor device may include forming a fin-type active pattern that extends in a first direction on a substrate, the fin-type active pattern including a lower pattern on the substrate and an upper pattern on the lower pattern. A field insulating layer is formed on the substrate, the sidewalls of the fin-type active pattern, and a portion upper pattern protruding further away from the substrate than a top surface of the field insulating layer. A dummy gate pattern that intersects the fin-type active pattern and that extends in a second direction that is different from the first direction is formed. The methods include forming dummy gate spacers on side walls of the dummy gate pattern, forming recesses in the fin-type active pattern on both sides of the dummy gate pattern and forming source and drain regions on both sides of the dummy gate pattern.

摘要翻译： 形成半导体器件的方法可以包括形成在衬底上沿第一方向延伸的鳍式有源图案，鳍型有源图案包括在衬底上的下图案和下图案上的上图案。 场绝缘层形成在衬底上，翅片型有源图案的侧壁和远离衬底的部分上部图案远离场绝缘层的顶表面。 形成与翅片型有源图案相交并且沿与第一方向不同的第二方向延伸的伪栅极图案。 所述方法包括在伪栅极图案的侧壁上形成虚拟栅极间隔物，在虚拟栅极图案的两侧上形成鳍状有源图案中的凹槽，并在虚拟栅极图案的两侧形成源区和漏极区。

公开(公告)号：US09106756B2

公开(公告)日：2015-08-11

申请号：US13436407

申请日：2012-03-30

申请人： Sang-Su Kim ,  Dong-Min Yoo ,  Tae-Woo Noh ,  Seung-Joo Hyun

发明人： Sang-Su Kim ,  Dong-Min Yoo ,  Tae-Woo Noh ,  Seung-Joo Hyun

IPC分类号： G08B1/08 ,  H04M1/67

CPC分类号： H04M1/67 ,  H03K17/941 ,  H04M2250/12

摘要： An apparatus and method is configured to detect the proximity of an object using a proximity sensor in a portable terminal. A method for detecting the proximity of an object in a portable terminal mounted with a proximity sensor includes setting a reference light-receiving quantity according to a hairstyle of a user of the portable terminal, emitting light, detecting a light-receiving quantity corresponding to the emitted light, and determining the proximity/non-proximity of an object by comparing the light-receiving quantity with the reference light-receiving quantity.

摘要翻译： 一种装置和方法被配置为使用便携式终端中的接近传感器来检测物体的接近度。 用于检测安装有接近传感器的便携式终端中的物体的接近度的方法包括根据便携式终端的用户的发型设置参考光接收量，发射光，检测对应于 发射光，以及通过将光接收量与参考光接收量进行比较来确定对象的接近度/非接近度。

公开(公告)号：US08772095B2

公开(公告)日：2014-07-08

申请号：US13495062

申请日：2012-06-13

申请人： Seok-Hoon Kim ,  Sang-Su Kim ,  Chung-Geun Koh ,  Sun-Ghil Lee ,  Jin-Yeong Joe

发明人： Seok-Hoon Kim ,  Sang-Su Kim ,  Chung-Geun Koh ,  Sun-Ghil Lee ,  Jin-Yeong Joe

IPC分类号： H01L21/00

CPC分类号： H01L29/7847 ,  H01L21/26506 ,  H01L21/26593 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/7843

摘要： The manufacturing a semiconductor device includes providing a substrate supporting a gate electrode, amorphizing and doping the source/drain regions located on both sides of the gate electrode by performing a pre-amorphization implant (PAI) process and implanting C or N into the source/drain regions in or separately from the PAI process, forming a stress inducing layer on the substrate to cover the amorphized source/drain regions, and subsequently recrystallizing the source/drain regions by annealing the substrate. The stress inducing layer may then be removed. Also, the C or N may be implanted into the entirety of the source/drain regions after the regions have been amorphized, or only into upper portions of the amorphized source/drain regions.

摘要翻译： 制造半导体器件包括提供支撑栅电极的衬底，通过执行预非晶化注入（PAI）工艺并且将C或N注入到源/漏区中来对位于栅电极的两侧的源/漏区进行非晶化和掺杂， 漏极区域或与PAI工艺分离，在衬底上形成应力诱导层以覆盖非晶化源极/漏极区域，并且随后通过对衬底退火来使源极/漏极区域再结晶。 然后可以去除应力诱导层。 此外，在区域已经非晶化之后，或仅仅在非晶化源极/漏极区域的上部，C或N可以被注入到整个源极/漏极区域中。

公开(公告)号：US07932154B2

公开(公告)日：2011-04-26

申请号：US12007097

申请日：2008-01-07

申请人： Sang-Su Kim ,  Sung-Taeg Kang ,  In-Wook Cho ,  Jeong-Hwan Yang

发明人： Sang-Su Kim ,  Sung-Taeg Kang ,  In-Wook Cho ,  Jeong-Hwan Yang

IPC分类号： H01L21/334

CPC分类号： H01L29/66833 ,  H01L21/28282 ,  H01L29/792

摘要： In a non-volatile flash memory device, and a method of fabricating the same, the device includes a semiconductor substrate, a source region and a drain region disposed in the semiconductor substrate to be spaced apart from each other, a tunneling layer pattern, a charge trap layer pattern and a shielding layer pattern, which are sequentially stacked on the semiconductor substrate between the source region and the drain region, adjacent to the source region, a first channel region disposed in the semiconductor substrate below the tunneling layer pattern, a gate insulating layer disposed on the semiconductor substrate between the drain region and the first channel region, a second channel region disposed in the semiconductor substrate below the gate insulating layer, a concentration of the second channel region being different from that of the first channel region, and a gate electrode covering the shielding layer pattern and the gate insulating layer.

摘要翻译： 在非易失性闪速存储器件及其制造方法中，该器件包括半导体衬底，设置在半导体衬底中的源极区和漏极区以彼此间隔开，隧道层图案， 电荷陷阱层图案和屏蔽层图案，它们在与源极区相邻的源极区域和漏极区域之间的半导体衬底上依次层叠，设置在半导体衬底中的在隧道层图案下方的第一沟道区域，栅极 在所述漏极区域和所述第一沟道区域之间设置在所述半导体衬底上的绝缘层，设置在所述半导体衬底中的所述栅极绝缘层下方的第二沟道区域，所述第二沟道区域的浓度与所述第一沟道区域的浓度不同，以及 覆盖屏蔽层图案的栅电极和栅极绝缘层。

公开(公告)号：US20070037347A1

公开(公告)日：2007-02-15

申请号：US11488969

申请日：2006-07-19

申请人： Sang-Su Kim

发明人： Sang-Su Kim

IPC分类号： H01L21/8242

CPC分类号： H01L28/84 ,  B82Y10/00 ,  H01L27/10852

摘要： A capacitor of a semiconductor device includes an oxide layer pattern including a trench formed on a semiconductor substrate, the trench having an inner wall and a bottom, quantum dots discontinuously formed on the inner wall of the trench, a bottom electrode formed on the inner wall and the bottom of the trench, the bottom electrode substantially surrounding the quantum dots, a dielectric layer formed on the bottom electrode, and a top electrode formed on the dielectric layer.

摘要翻译： 半导体器件的电容器包括氧化物层图案，其包括在半导体衬底上形成的沟槽，所述沟槽具有内壁和底部，量子点不连续地形成在沟槽的内壁上，底电极形成在内壁上 并且沟槽的底部，底部电极基本上围绕量子点，形成在底部电极上的电介质层和形成在电介质层上的顶部电极。

公开(公告)号：US07129591B2

公开(公告)日：2006-10-31

申请号：US10982685

申请日：2004-11-04

申请人： Sang-Su Kim ,  In-Wook Cho ,  Myeong-Cheol Kim ,  Sung-Woo Lee ,  Jin-Hee Kim ,  Doo-Youl Lee ,  Sung-Ho Kim

发明人： Sang-Su Kim ,  In-Wook Cho ,  Myeong-Cheol Kim ,  Sung-Woo Lee ,  Jin-Hee Kim ,  Doo-Youl Lee ,  Sung-Ho Kim

IPC分类号： H01L23/544

CPC分类号： H01L23/544 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/5446 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

摘要： Disclosed is a semiconductor device having an align key and a method of fabricating the same. The semiconductor device includes a semiconductor substrate having a cell area and an align key area. An isolation layer that defines a cell active area is disposed in the cell area of the semiconductor substrate. A cell charge storage layer pattern is disposed across the cell active area. An align charge storage layer pattern is disposed in the align key area of the semiconductor substrate. An align trench self-aligned with the align charge storage layer pattern is formed in the align key area of the semiconductor substrate.

摘要翻译： 公开了具有对准键的半导体器件及其制造方法。 半导体器件包括具有单元区域和对准键区域的半导体衬底。 限定电池有源区的隔离层设置在半导体衬底的单元区域中。 电池电荷存储层图案跨越电池有源区域设置。 对准电荷存储层图案设置在半导体衬底的对准键区域中。 在对准电荷存储层图案中自对准的对准沟槽形成在半导体衬底的对准键区域中。

公开(公告)号：US06674235B2

公开(公告)日：2004-01-06

申请号：US10112888

申请日：2002-04-01

申请人： Keong-Su Lim ,  Duk-Young Jeon ,  Chang-Hyun Lee ,  Sang-Su Kim

发明人： Keong-Su Lim ,  Duk-Young Jeon ,  Chang-Hyun Lee ,  Sang-Su Kim

IPC分类号： H01J4006

CPC分类号： H01J1/34 ,  H01J40/06

摘要： A photocathode structure having a photoelectric face plate protective layer, in order to prevent a photoelectric effect from being deteriorated sharply due to a high reaction of oxygen with respect to most of existing photoelectric face plate materials when the photoelectric face plate used for generating photoelectrons by a photoelectric effect is exposed to the atmosphere, is provided. For example, a diamond-like carbon thin layer is used as a photocathode protective layer, to thereby perform a function of protection of the photoelectric face plate through isolation of the photoelectric face plate from the atmosphere and enable electrons generated from the photoelectric face plate to pass through a diamond-like carbon thin layer, which is deposited thinly, by the tunneling effect so that the performance of the photocathode is not affected. By using the protective layer, the processes subsequent to the photoelectric face plate deposition process can be freely performed in the atmosphere, to thereby simplify the whole process. As a result, a production cost is lowered, and manufacturing of a device or apparatus using a large-are photocathode is facilitated.

摘要翻译： 一种具有光电面板保护层的光电阴极结构，为了防止光电效应由于氧气相对于大多数现有光电面板材料而产生的高反应，当用于通过光电面板产生光电子的光电面板 提供光电效应暴露在大气中。 例如，使用类金刚石碳薄膜作为光电阴极保护层，由此通过将光电面板与大气隔离来实现保护光电面板的功能，并且能够使从光电面板产生的电子 通过通过隧道效应薄沉积的类金刚石碳薄层，使得光电阴极的性能不受影响。 通过使用保护层，可以在大气中自由进行光电面板沉积处理之后的处理，从而简化整个处理。 结果，降低了制造成本，并且促进了使用大的光电阴极的装置或装置的制造。