公开(公告)号：US09716108B2

公开(公告)日：2017-07-25

申请号：US14106645

申请日：2013-12-13

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Jun Cheng ,  Guangcai Yuan

IPC分类号： H01L29/66 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L27/1225 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78621 ,  H01L29/7869

摘要： The present invention discloses a thin film transistor (TFT), an array substrate, and fabrication methods thereof, and a display device. The TFT includes a gate, an oxide active layer, a source, and a drain formed on a substrate, wherein a source and drain transition layer is provided between the oxide active layer and the source, the drain. One patterning process is reduced and one mask process is saved through forming the source and drain transition layer between the oxide active layer and the source, the drain, thus effectively simplifying the fabrication procedure. At the same time, the additionally provided source and drain transition layer may prevent the oxide active layer from being corroded during etching, also effectively reduce threshold voltage (Vth) drift of the TFT, improve Ion (on-state current) /Ioff (off-state current), and enhance thermal stability.

公开(公告)号：US09502517B2

公开(公告)日：2016-11-22

申请号：US14430095

申请日：2014-05-30

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Guangcai Yuan ,  Dongfang Wang ,  Jun Cheng ,  Xiangyong Kong ,  Ce Zhao

IPC分类号： H01L29/24 ,  H01L29/423 ,  H01L27/12 ,  H01L29/51 ,  H01L29/786

CPC分类号： H01L29/42384 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1285 ,  H01L27/1288 ,  H01L29/24 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2029/42388

摘要： A display device, an array substrate and a fabrication method thereof are provided. The array substrate comprises a data line and a gate line, the data line and the gate line intersect with each other to define a pixel region. The pixel region comprises a first thin film transistor and a pixel electrode. The fabrication method comprises: forming an active layer film and a source-drain metal layer on a substrate, and forming an active layer, a source electrode and a drain electrode of the first thin film transistor on the substrate by a single patterning process.

摘要翻译： 提供了显示装置，阵列基板及其制造方法。 阵列基板包括数据线和栅极线，数据线和栅极线彼此相交以限定像素区域。 像素区域包括第一薄膜晶体管和像素电极。 制造方法包括：在衬底上形成有源层膜和源极 - 漏极金属层，并通过单一图案化工艺在衬底上形成第一薄膜晶体管的有源层，源电极和漏电极。

公开(公告)号：US09437663B2

公开(公告)日：2016-09-06

申请号：US14785905

申请日：2015-03-18

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Jiangbo Chen ,  Jun Cheng ,  Chunsheng Jiang ,  Baoxia Zhang

IPC分类号： H01L29/08 ,  H01L27/32 ,  H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L51/56

CPC分类号： H01L27/3272 ,  H01L27/12 ,  H01L27/322 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L51/5253 ,  H01L51/5262 ,  H01L51/5284 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/303

摘要： An array substrate and a fabrication method thereof, and a display device are provided. The array substrate comprises: a pattern of an organic light-emitting layer (11); a pattern of an active layer (4a) located in a thin film transistor region and a pattern of an absorbing layer (4b) located in an open region, which are arranged in a same layer, wherein, the pattern of the absorbing layer (4b) is located in a light outgoing direction of the pattern of the organic light-emitting layer (11), and is made of a transparent material having an ultraviolet absorbing function. In this way, the pattern of the absorbing layer located in the open region can absorb ultraviolet light from outgoing light, so that damage to eyes caused by the outgoing light can be reduced; and the pattern of the active layer and the pattern of the absorbing layer are arranged in a same layer, which, as compared with a manner of separately arranging a layer of an ultraviolet absorbing layer in the array substrate, can reduce a thickness of the array substrate, which is conducive to lighting and thinning a display device.

摘要翻译： 提供阵列基板及其制造方法以及显示装置。 阵列基板包括：有机发光层（11）的图案; 位于薄膜晶体管区域中的有源层（4a）的图案和布置在同一层中的位于开放区域中的吸收层（4b）的图案，其中，吸收层（4b）的图案 ）位于有机发光层（11）的图案的光出射方向上，并且由具有紫外线吸收功能的透明材料制成。 以这种方式，位于开放区域中的吸收层的图案可以吸收出射光的紫外线，从而可以减少由出射光引起的对眼睛的损伤; 并且有源层的图案和吸收层的图案被布置在同一层中，与在阵列基板中分开布置一层紫外线吸收层的方式相比，可以减小阵列的厚度 衬底，这有利于照明和变薄显示装置。

公开(公告)号：US20150214249A1

公开(公告)日：2015-07-30

申请号：US14353580

申请日：2013-06-20

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Jun Cheng ,  Jiangbo Chen ,  Xiangyong Kong

IPC分类号： H01L27/12 ,  H01L29/24 ,  H01L27/32 ,  H01L21/443 ,  H01L21/4763 ,  H01L29/786 ,  H01L29/66

CPC分类号： H01L27/1225 ,  H01L21/02565 ,  H01L21/02664 ,  H01L21/443 ,  H01L21/47635 ,  H01L27/1255 ,  H01L27/1259 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

摘要： An array substrate, a display device and a manufacturing method. The array substrate includes a thin film transistor and a pixel electrode (9). The active layer (4) of the thin film transistor is formed by a first region (401) of the oxide semiconductor layer. The oxide semiconductor layer further includes a second region (402). The pixel electrode (9) and the second region (402) of the oxide semiconductor layer (9) are overlapped so as to form a storage capacitor. The second region (402) of the oxide semiconductor layer (9) constitutes a first electrode plate (402) of the storage capacitor; the pixel electrode (9) corresponding to the second region (402) of the oxide semiconductor layer (4) constitutes a second electrode plate (9) of the storage capacitor; and dielectric layers (7, 8) are disposed between the first electrode plate (402) and the second electrode plate (9).

摘要翻译： 阵列基板，显示装置及制造方法。 阵列基板包括薄膜晶体管和像素电极（9）。 薄膜晶体管的有源层（4）由氧化物半导体层的第一区域（401）形成。 氧化物半导体层还包括第二区域（402）。 氧化物半导体层（9）的像素电极（9）和第二区域（402）重叠以形成存储电容器。 氧化物半导体层（9）的第二区域（402）构成存储电容器的第一电极板（402） 与氧化物半导体层（4）的第二区域（402）对应的像素电极（9）构成存储电容器的第二电极板（9） 并且电介质层（7,8）设置在第一电极板（402）和第二电极板（9）之间。

公开(公告)号：US20140110702A1

公开(公告)日：2014-04-24

申请号：US13994746

申请日：2012-10-09

申请人： BOE Technology Group Co., Ltd.

发明人： Jun Cheng ,  Woobong Lee

IPC分类号： H01L29/786 ,  H01L29/66

CPC分类号： H01L29/78606 ,  H01L29/66969 ,  H01L29/7869

摘要： Disclosed are an oxide thin film transistor (oxide-TFT) which can prevent H+ ions from invading into an active layer to maintain a stable characteristics of the TFT, a method for fabricating the oxide-TFT, an array substrate, and a display apparatus. The oxide-TFT comprises a substrate (200), and a gate electrode (201) and a gate insulating layer (202) sequentially disposed on the substrate. An active layer (203) is disposed on the gate insulating layer and is coated with a blocking layer, which at least comprises a first blocking layer (204) and a second blocking layer (205).

摘要翻译： 公开了一种可以防止H +离子侵入有源层以保持TFT的稳定特性的氧化物薄膜晶体管（氧化物TFT），制造氧化物TFT的方法，阵列衬底和显示装置。 氧化物TFT包括基板（200）和顺序地设置在基板上的栅电极（201）和栅极绝缘层（202）。 有源层（203）设置在栅极绝缘层上并且涂覆有至少包括第一阻挡层（204）和第二阻挡层（205）的阻挡层。