公开(公告)号：US08274766B2

公开(公告)日：2012-09-25

申请号：US11783011

申请日：2007-04-05

申请人： Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Hitoshi Iwasaki

发明人： Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Hitoshi Iwasaki

IPC分类号： G11B5/127

CPC分类号： H01F41/302 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G11B5/3929 ,  G11B2005/3996 ,  G11C11/16 ,  H01F10/3222 ,  H01F10/3272 ,  H01F10/3295

摘要： A magneto-resistive element includes: a first magnetic layer having a substantially fixed magnetization direction; a thin film layer disposed on the first magnetic layer and having at least one of oxide, nitride, oxynitride, and metal; and a second magnetic layer disposed on the thin film layer and having a substantially fixed magnetization direction.

摘要翻译： 磁阻元件包括：具有基本上固定的磁化方向的第一磁性层; 设置在所述第一磁性层上并具有氧化物，氮化物，氧氮化物和金属中的至少一种的薄膜层; 以及设置在薄膜层上并具有基本固定的磁化方向的第二磁性层。

公开(公告)号：US08169752B2

公开(公告)日：2012-05-01

申请号：US11822545

申请日：2007-07-06

申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Yoshihiko Fuji

发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Yoshihiko Fuji

IPC分类号： G11B5/33

CPC分类号： G11B5/3983 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/305 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/1121

摘要： In a method for manufacturing a magneto-resistance effect element having a pinned magnetic layer of which a magnetization is fixed substantially in one direction, a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic field and a spacer layer, which is located between the fixed magnetization layer and the free magnetization layer, with an insulating layer and a metallic layer penetrating through the insulating layer, the spacer layer is formed by forming a first metallic layer; forming, on the first metallic layer, a second metallic layer to be converted into a portion of the insulating layer; performing a first conversion treatment so as to convert the second metallic layer into the portion of said insulating layer and to form a portion of the metallic layer penetrating through the insulating layer; forming, on the insulating layer and the metallic layer formed through the first conversion treatment, a third metallic layer to be converted into the other portion of the insulating layer; and performing a second conversion treatment so as to convert the third metallic layer into the other portion of the insulating and to form the other portion of the metallic layer penetrating through the insulating layer.

摘要翻译： 在制造磁阻效应元件的方法中，该磁阻效应元件的磁化强度基本上沿一个方向固定，其中磁化按照外部磁场旋转的自由磁化层和间隔层， 位于固定磁化层和自由磁化层之间，绝缘层和贯穿绝缘层的金属层，通过形成第一金属层形成间隔层; 在第一金属层上形成第二金属层，以转化成绝缘层的一部分; 进行第一转换处理，以将第二金属层转换成绝缘层的部分，并形成贯穿绝缘层的金属层的一部分; 在绝缘层和通过第一转换处理形成的金属层上形成将被转换成绝缘层的另一部分的第三金属层; 并进行第二转换处理，以将第三金属层转换成绝缘体的另一部分，并形成贯穿绝缘层的金属层的另一部分。

公开(公告)号：US20120015214A1

公开(公告)日：2012-01-19

申请号：US13243553

申请日：2011-09-23

申请人： Yoshihiko FUJI ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Yoshihiko FUJI ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： G11B5/39

CPC分类号： G11B5/398 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/305 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/1121 ,  Y10T428/1129

摘要： A magneto-resistance effect element, comprising a first magnetic layer, a first metallic layer, which is formed on said first magnetic layer, mainly containing an element selected from the group consisting of Cu, Au, Ag, a current confined layer including an insulating layer and a current path which are made by oxidizing, nitriding or oxynitriding for a second metallic layer, mainly containing Al, formed on said first metallic layer, a functional layer, which is formed on said current confined layer, mainly containing an element selected from the group consisting of Si, Hf, Ti, Mo, W, Nb, Mg, Cr and Zr, a third metallic layer, which is formed on said functional layer, mainly containing an element selected from the group consisting of Cu, Au, Ag; and a second magnetic layer which is formed on said third metallic layer.

摘要翻译： 一种磁电阻效应元件，包括第一磁性层，第一金属层，其形成在所述第一磁性层上，主要包含选自由Cu，Au，Ag组成的组的元素，包含绝缘体的电流限制层 层和电流路径，其通过对形成在所述第一金属层上的主要包含Al的第二金属层进行氧化，氮化或氧氮化而形成，功能层，其形成在所述电流限制层上，主要含有选自 由Si，Hf，Ti，Mo，W，Nb，Mg，Cr和Zr组成的组，形成在所述功能层上的第三金属层，主要含有选自Cu，Au，Ag ; 以及形成在所述第三金属层上的第二磁性层。

公开(公告)号：US07776387B2

公开(公告)日：2010-08-17

申请号：US11802474

申请日：2007-05-23

申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： B05D5/12

CPC分类号： G11B5/398 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/305 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/1121 ,  Y10T428/1129

摘要： A method for manufacturing a magneto-resistance effect element includes: forming a first magnetic layer; forming a first metallic layer, on the first magnetic layer, mainly containing an element selected from the group consisting of Cu, Au, Ag; forming a functional layer, on the first metallic layer, mainly containing an element selected from the group consisting of Si, Hf, Ti, Mo, W, Nb, Mg, Cr and Zr; forming a second metallic layer, on the functional layer, mainly containing Al; treating the second metallic layer by means of oxidizing, nitriding or oxynitiriding so as to form a current confined layer including an insulating layer and a current path with a conductor passing a current through the insulating layer; and forming, on the current confined layer, a second magnetic layer.

摘要翻译： 一种制造磁阻效应元件的方法包括：形成第一磁性层; 在第一磁性层上形成第一金属层，主要包含选自Cu，Au，Ag的元素; 在第一金属层上形成功能层，主要含有选自由Si，Hf，Ti，Mo，W，Nb，Mg，Cr和Zr组成的组中的元素; 在功能层上形成主要含有Al的第二金属层; 通过氧化，氮化或氧氮处理来处理第二金属层，以形成包含绝缘层和电流通路的电流限制层，导体通过电流通过绝缘层; 以及在所述受限层上形成第二磁性层。

公开(公告)号：US20090104475A1

公开(公告)日：2009-04-23

申请号：US12314811

申请日：2008-12-17

申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： G11B5/39

CPC分类号： G11B5/398 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/305 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/1121 ,  Y10T428/1129

摘要： A method for manufacturing a magneto-resistance effect element includes: forming a first magnetic layer; forming a first metallic layer, on the first magnetic layer, mainly containing an element selected from the group consisting of Cu, Au, Ag; forming a functional layer, on the first metallic layer, mainly containing an element selected from the group consisting of Si, Hf, Ti, Mo, W, Nb, Mg, Cr and Zr; forming a second metallic layer, on the functional layer, mainly containing Al; treating the second metallic layer by means of oxidizing, nitriding or oxynitiriding so as to form a current confined layer including an insulating layer and a current path with a conductor passing a current through the insulating layer; and forming, on the current confined layer, a second magnetic layer.

摘要翻译： 一种制造磁阻效应元件的方法包括：形成第一磁性层; 在第一磁性层上形成第一金属层，主要包含选自Cu，Au，Ag的元素; 在第一金属层上形成功能层，主要含有选自由Si，Hf，Ti，Mo，W，Nb，Mg，Cr和Zr组成的组中的元素; 在功能层上形成主要含有Al的第二金属层; 通过氧化，氮化或氧氮处理来处理第二金属层，以形成包含绝缘层和电流通路的电流限制层，导体通过电流通过绝缘层; 以及在所述受限层上形成第二磁性层。

公开(公告)号：US20080311431A1

公开(公告)日：2008-12-18

申请号：US12155924

申请日：2008-06-11

申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： G11B5/65

CPC分类号： G11B5/3983 ,  B82Y25/00 ,  G01R33/093 ,  G01S7/032 ,  G01S13/34 ,  G01S2013/936 ,  G11B5/3903 ,  G11B5/398 ,  G11B5/66 ,  G11C11/16 ,  H01L27/224 ,  H01L27/228 ,  H01L43/08

摘要： A magnetic multilayered film current element includes: at least one magnetic layer; at least one film structure containing a first insulating layer where a first opening is formed, a second insulating layer where a second opening is formed and a conductor disposed between the first insulating layer and the second insulating layer under the condition that a distance “A” between the first insulating layer and a portion of the second insulating layer at a position of the second opening is set larger than a closest distance “B” between the first insulating layer and the second insulating layer; and a pair of electrodes for flowing current to a magnetic multilayered film containing the at least one magnetic layer and the at least one film structure along a stacking direction of the magnetic multilayered film.

摘要翻译： 磁性多层膜电流元件包括：至少一个磁性层; 至少一个膜结构，其包含形成第一开口的第一绝缘层，形成第二开口的第二绝缘层和设置在第一绝缘层和第二绝缘层之间的导体，在距离“A” 在第一绝缘层和第二绝缘层的位于第二开口的位置处的第一绝缘层和第二绝缘层的一部分之间的距离设定为大于第一绝缘层和第二绝缘层之间的最近距离“B” 以及一对电极，用于沿着磁性多层膜的堆叠方向将电流流向含有至少一个磁性层和至少一个膜结构的磁性多层膜。

公开(公告)号：US20080204943A1

公开(公告)日：2008-08-28

申请号：US11902657

申请日：2007-09-24

申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： G11B5/33

CPC分类号： G11B5/3983 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  G11C11/161 ,  H01F10/187 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3263 ,  H01F10/3272 ,  Y10T428/1121

摘要： A magnetoresistive element includes: a first magnetic layer whose magnetization direction is substantially pinned toward one direction; a second magnetic layer whose magnetization direction is changed in response to an external magnetic field; and a spacer layer provided between the first magnetic layer and the second magnetic layer. At least one of the first magnetic layer and the second magnetic layer has a magnetic compound that is expressed by M1aM2bXc (where 5≦a≦68, 10≦b≦73, and 22≦c≦85) M1 is at least one element selected from the group consisting of Co, Fe, and Ni. M2 is at least one element selected from the group consisting of Ti, V, Cr, and Mn. X is at least one element selected from the group consisting of N, O, and C.

摘要翻译： 磁阻元件包括：其磁化方向基本上朝向一个方向固定的第一磁性层; 其磁化方向响应于外部磁场而改变的第二磁性层; 以及设置在第一磁性层和第二磁性层之间的间隔层。 第一磁性层和第二磁性层中的至少一个具有由M 1 aM 2 bXc（其中5≤a≤68,10≤b≤73且22 <= c < = 85）M 1是选自Co，Fe和Ni中的至少一种元素。 M 2是选自Ti，V，Cr和Mn中的至少一种元素。 X是选自N，O和C中的至少一种元素。

公开(公告)号：US20080008909A1

公开(公告)日：2008-01-10

申请号：US11802474

申请日：2007-05-23

申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa

IPC分类号： G11B5/33 ,  G11B5/39

CPC分类号： G11B5/398 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/305 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/1121 ,  Y10T428/1129

摘要： A method for manufacturing a magneto-resistance effect element includes: forming a first magnetic layer; forming a first metallic layer, on the first magnetic layer, mainly containing an element selected from the group consisting of Cu, Au, Ag; forming a functional layer, on the first metallic layer, mainly containing an element selected from the group consisting of Si, Hf, Ti, Mo, W, Nb, Mg, Cr and Zr; forming a second metallic layer, on the functional layer, mainly containing Al; treating the second metallic layer by means of oxidizing, nitriding or oxynitiriding so as to form a current confined layer including an insulating layer and a current path with a conductor passing a current through the insulating layer; and forming, on the current confined layer, a second magnetic layer.

摘要翻译： 一种制造磁阻效应元件的方法包括：形成第一磁性层; 在第一磁性层上形成第一金属层，主要包含选自Cu，Au，Ag的元素; 在第一金属层上形成功能层，主要含有选自由Si，Hf，Ti，Mo，W，Nb，Mg，Cr和Zr组成的组中的元素; 在功能层上形成主要含有Al的第二金属层; 通过氧化，氮化或氧氮处理来处理第二金属层，以形成包含绝缘层和电流通路的电流限制层，导体通过电流通过绝缘层; 以及在所述受限层上形成第二磁性层。

公开(公告)号：US20070253122A1

公开(公告)日：2007-11-01

申请号：US11783011

申请日：2007-04-05

申请人： Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Hitoshi Iwasaki

发明人： Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Hitoshi Iwasaki

IPC分类号： G11B5/33

CPC分类号： H01F41/302 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/09 ,  G11B5/3929 ,  G11B2005/3996 ,  G11C11/16 ,  H01F10/3222 ,  H01F10/3272 ,  H01F10/3295

摘要： A magneto-resistive element includes: a first magnetic layer having a substantially fixed magnetization direction; a thin film layer disposed on the first magnetic layer and having at least one of oxide, nitride, oxynitride, and metal; and a second magnetic layer disposed on the thin film layer and having a substantially fixed magnetization direction.

摘要翻译： 磁阻元件包括：具有基本上固定的磁化方向的第一磁性层; 设置在所述第一磁性层上并具有氧化物，氮化物，氧氮化物和金属中的至少一种的薄膜层; 以及设置在薄膜层上并具有基本固定的磁化方向的第二磁性层。

公开(公告)号：US20070188945A1

公开(公告)日：2007-08-16

申请号：US11702582

申请日：2007-02-06

申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

IPC分类号： G11B5/127

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/09 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3281 ,  H01L27/228 ,  H01L43/08

摘要： A magnetoresistive effect element includes a fixed magnetization layer; a free magnetization layer; a nonmagnetic spacer layer between the fixed magnetization layer and the free magnetization layer; and an insertion layer disposed on an opposite side of the free magnetization layer from the nonmagnetic spacer layer, wherein the first insulating layer has an oxide, a nitride, or an oxynitride including at least one kind of element selected from a group constituted of Al(aluminum), Si(silicon), Mg(magnesium), Ta(tantalum) and Zn(zinc) as a major constituent, and the insertion layer has an oxide, a nitride, or an oxynitride including at least one kind of element selected from a group constituted of Al(aluminum), Si(silicon), Mg(magnesium), Ta(tantalum) and Zn(zinc) as a major constituent.

摘要翻译： 磁阻效应元件包括固定磁化层; 自由磁化层; 在固定磁化层和自由磁化层之间的非磁性间隔层; 以及插入层，其设置在所述自由磁化层与所述非磁性间隔层的相对侧上，其中，所述第一绝缘层具有氧化物，氮化物或氮氧化物，所述氧化物，氮化物或氮氧化物包含选自由Al组成的组中的至少一种元素 铝），Si（硅），Mg（镁），Ta（钽）和Zn（锌）作为主要成分，并且所述插入层具有氧化物，氮化物或氧氮化物，其包含至少一种选自 以Al（铝），Si（硅），Mg（镁），Ta（钽）和Zn（锌）为主要成分的基团。