公开(公告)号：US20100227459A1

公开(公告)日：2010-09-09

申请号：US11997798

申请日：2006-08-09

申请人： Hideaki Yamasaki

发明人： Hideaki Yamasaki

IPC分类号： H01L21/28 ,  H01L21/44

CPC分类号： C23C16/16 ,  C23C16/34 ,  C23C16/42 ,  C23C16/45525 ,  H01L21/28097 ,  H01L29/4975

摘要： Disclosed is a method for forming a W-based film including a step for placing a substrate in a processing chamber, a step for forming a WSi film by alternately repeating disposition of W through introduction of a W(CO)6 gas into the processing chamber and silicidation of W or deposition of Si through introduction of an Si-containing gas into the processing chamber, and a step for purging the processing chamber between the supply of the W(CO)6 gas and the supply of the Si-containing gas.

摘要翻译： 公开了一种用于形成W基膜的方法，其包括将基板放置在处理室中的步骤，通过将W（CO）6气体引入到处理室中交替重复布置W形成WSi膜的步骤 通过将含Si气体引入处理室中，W的硅化或Si的沉积，以及在供给W（CO）6气体和供给含Si气体之间进行处理室的吹扫的工序。

公开(公告)号：US20080311297A1

公开(公告)日：2008-12-18

申请号：US12193370

申请日：2008-08-18

申请人： Tatsuo Hatano ,  Hideaki Yamasaki

发明人： Tatsuo Hatano ,  Hideaki Yamasaki

IPC分类号： C23C16/16

CPC分类号： C23C16/16 ,  C23C16/4412 ,  C23C16/45527 ,  C23C16/45553

摘要： A CVD method for forming a metal film on a substrate by using a metal carbonyl gas includes a preparing step for setting a vacuum chamber at a vacuum pressure and heating the substrate in the vacuum chamber to a first temperature where the metal carbonyl gas is decomposed. Also included are a supplying step for supplying the metal carbonyl gas into the vacuum chamber while exhausting the vacuum chamber with a first vacuum pumping speed and a removing step for removing a decomposed gas of the metal carbonyl gas by stopping supplying of the metal carbonyl gas and quickly exhausting the vacuum chamber with a second vacuum pumping speed sufficiently higher than the first vacuum pumping speed. The supplying step and the removing step can be repeatedly as desired.

摘要翻译： 通过使用金属羰基气体在基板上形成金属膜的CVD方法包括将真空室设置在真空压力下并将真空室内的基板加热到金属羰基气体分解的第一温度的准备工序。 还包括供给步骤，用于将金属羰基气体供给到真空室中，同时以第一真空泵送速度排出真空室，以及通过停止供应羰基金属气体来除去金属羰基气体的分解气体的去除步骤;以及 以足够高于第一真空泵送速度的第二真空泵送速度快速排出真空室。 可以根据需要反复进行供给步骤和去除步骤。

公开(公告)号：US06548398B1

公开(公告)日：2003-04-15

申请号：US10049282

申请日：2002-02-11

申请人： Hideaki Yamasaki

发明人： Hideaki Yamasaki

IPC分类号： H01L214763

CPC分类号： H01L21/76876 ,  H01L21/321 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76861 ,  H01L21/76877

摘要： A manufacturing method of a semiconductor device of the invention is a method of manufacturing a semiconductor device by forming a plurality of films on an insulating layer which has a surface in which a recess portion is partially formed. The method includes: a base-metal-film forming step of forming a base-metal film including a metal having a high melting point on the surface of the insulating layer including an inside surface of the recess portion, a surface-processing step of processing a surface of the base-metal film by means of an organic solvent having an OH-group, and a metal-for-circuit depositing step of depositing a metal for a circuit on the processed surface of the base-metal film by means of a CVD method in such a manner that at least a part of or the whole of the recess portion is filled up.

摘要翻译： 本发明的半导体器件的制造方法是通过在绝缘层上形成多个膜来制造半导体器件的方法，所述绝缘层具有部分形成凹部的表面。 该方法包括：在包括凹部的内表面的绝缘层的表面上形成包括具有高熔点的金属的基底金属膜的基底金属膜形成步骤，处理的表面处理步骤 通过具有OH基的有机溶剂的基底金属膜的表面，以及用于电路沉积金属的电路用金属电路沉积步骤，其通过以下步骤在基底金属膜的处理表面上沉积： CVD法以使凹部的至少一部分或整体被填充的方式。

公开(公告)号：US20100136230A1

公开(公告)日：2010-06-03

申请号：US12593945

申请日：2008-03-26

申请人： Tsuyoshi Moriya ,  Toshio Hasegawa ,  Hideaki Yamasaki

发明人： Tsuyoshi Moriya ,  Toshio Hasegawa ,  Hideaki Yamasaki

IPC分类号： B05D1/12 ,  B05C5/00

CPC分类号： C23C16/4402

摘要： A method of cleaning a powdery source supply system prevents outflow of particles from a chamber or an introduction line in a film forming process. A substrate processing system includes a powdery source supply system and a film forming processing unit. The powdery source supply system includes an ampoule for accommodating a powdery source, a carrier gas supply unit for supplying a carrier gas into the ampoule, an introduction line for connecting the ampoule and the film forming processing unit, a purge line branched from the introduction line, and a valve for opening or closing the introduction line. When the valve is opened and the interior of the purge line is evacuated prior to the film forming process, the carrier gas supply unit supplies a carrier gas so that the viscous force acting on particles by the carrier gas is greater than the viscous force in the film forming process.

摘要翻译： 清洁粉末源供应系统的方法可以防止颗粒从成膜过程中的室或引入管流出。 基板处理系统包括粉末源供应系统和成膜处理单元。 粉末源供给系统包括用于容纳粉末源的安瓿，用于将载气供应到安瓿中的载气供给单元，用于连接安瓿和成膜处理单元的引入管线，从导入管分支的净化管线 ，以及用于打开或关闭引入管线的阀。 当打开阀门并且在成膜过程之前将净化管线的内部抽真空时，载气供给单元提供载气，使得由载气作用在颗粒上的粘性力大于载体气体中的粘性力 成膜工艺。

公开(公告)号：US07674710B2

公开(公告)日：2010-03-09

申请号：US11561810

申请日：2006-11-20

申请人： Shigeo Ashigaki ,  Hideaki Yamasaki ,  Tomoyuki Sakoda ,  Mikio Suzuki ,  Genji Nakamura ,  Gert Leusink

发明人： Shigeo Ashigaki ,  Hideaki Yamasaki ,  Tomoyuki Sakoda ,  Mikio Suzuki ,  Genji Nakamura ,  Gert Leusink

IPC分类号： H01L21/4763

CPC分类号： H01L21/28079 ,  H01L29/4958 ,  H01L29/513 ,  H01L29/518

摘要： A method for integrating a metal-containing film in a semiconductor device, for example a gate stack. In one embodiment, the method includes providing a substrate in a process chamber, depositing the tungsten-containing film on the substrate at a first substrate temperature by exposing the substrate to a deposition gas containing a tungsten carbonyl precursor, heat treating the tungsten-containing film at a second substrate temperature greater than the first substrate temperature to remove carbon monoxide gas from the tungsten-containing film, and forming a barrier layer on the heat treated tungsten-containing film. Examples of tungsten-containing films include W, WN, WSi, and WC. Additional embodiments include depositing metal-containing films containing Ni, Mo, Co, Rh, Re, Cr, or Ru from the corresponding metal carbonyl precursors.

摘要翻译： 一种用于将含金属膜整合在半导体器件例如栅极堆叠中的方法。 在一个实施例中，该方法包括在处理室中提供衬底，通过将衬底暴露于含有羰基钨前体的沉积气体，在第一衬底温度下将含钨膜沉积在衬底上，热处理含钨膜 在大于第一衬底温度的第二衬底温度下从含钨膜中除去一氧化碳气体，并在热处理的含钨膜上形成阻挡层。 含钨膜的实例包括W，WN，WSi和WC。 另外的实施方案包括从相应的金属羰基前体沉积含有Ni，Mo，Co，Rh，Re，Cr或Ru的含金属膜。

公开(公告)号：US08389053B2

公开(公告)日：2013-03-05

申请号：US12593945

申请日：2008-03-26

申请人： Tsuyoshi Moriya ,  Toshio Hasegawa ,  Hideaki Yamasaki

发明人： Tsuyoshi Moriya ,  Toshio Hasegawa ,  Hideaki Yamasaki

IPC分类号： B05D1/12 ,  C23C16/00

CPC分类号： C23C16/4402

摘要： A method of cleaning a powdery source supply system prevents outflow of particles from a chamber or an introduction line in a film forming process. A substrate processing system includes a powdery source supply system and a film forming processing unit. The powdery source supply system includes an ampoule for accommodating a powdery source, a carrier gas supply unit for supplying a carrier gas into the ampoule, an introduction line for connecting the ampoule and the film forming processing unit, a purge line branched from the introduction line, and a valve for opening or closing the introduction line. When the valve is opened and the interior of the purge line is evacuated prior to the film forming process, the carrier gas supply unit supplies a carrier gas so that the viscous force acting on particles by the carrier gas is greater than the viscous force in the film forming process.

摘要翻译： 清洁粉末源供应系统的方法可以防止颗粒从成膜过程中的室或引入管流出。 基板处理系统包括粉末源供应系统和成膜处理单元。 粉末源供给系统包括用于容纳粉末源的安瓿，用于将载气供应到安瓿中的载气供给单元，用于连接安瓿和成膜处理单元的引入管线，从导入管分支的净化管线 ，以及用于打开或关闭引入管线的阀。 当打开阀门并且在成膜过程之前将净化管线的内部抽真空时，载气供给单元提供载气，使得由载气作用在颗粒上的粘性力大于载体气体中的粘性力 成膜工艺。

公开(公告)号：US20080119033A1

公开(公告)日：2008-05-22

申请号：US11561810

申请日：2006-11-20

申请人： Shigeo Ashigaki ,  Hideaki Yamasaki ,  Tomoyuki Sakoda ,  Mikio Suzuki ,  Genji Nakamura ,  Gert Leusink

发明人： Shigeo Ashigaki ,  Hideaki Yamasaki ,  Tomoyuki Sakoda ,  Mikio Suzuki ,  Genji Nakamura ,  Gert Leusink

IPC分类号： H01L21/28

CPC分类号： H01L21/28079 ,  H01L29/4958 ,  H01L29/513 ,  H01L29/518

摘要： A method for integrating a metal-containing film in a semiconductor device, for example a gate stack. In one embodiment, the method includes providing a substrate in a process chamber, depositing the tungsten-containing film on the substrate at a first substrate temperature by exposing the substrate to a deposition gas containing a tungsten carbonyl precursor, heat treating the tungsten-containing film at a second substrate temperature greater than the first substrate temperature to remove carbon monoxide gas from the tungsten-containing film, and forming a barrier layer on the heat treated tungsten-containing film. Examples of tungsten-containing films include W, WN, WSi, and WC. Additional embodiments include depositing metal-containing films containing Ni, Mo, Co, Rh, Re, Cr, or Ru from the corresponding metal carbonyl precursors.

摘要翻译： 一种用于将含金属膜整合在半导体器件例如栅极堆叠中的方法。 在一个实施例中，该方法包括在处理室中提供衬底，通过将衬底暴露于含有羰基钨前体的沉积气体，在第一衬底温度下将含钨膜沉积在衬底上，热处理含钨膜 在大于第一衬底温度的第二衬底温度下从含钨膜中除去一氧化碳气体，并在热处理的含钨膜上形成阻挡层。 含钨膜的实例包括W，WN，WSi和WC。 另外的实施方案包括从相应的金属羰基前体沉积含有Ni，Mo，Co，Rh，Re，Cr或Ru的含金属膜。

公开(公告)号：US08785310B2

公开(公告)日：2014-07-22

申请号：US13427343

申请日：2012-03-22

申请人： Toshio Hasegawa ,  Kunihiro Tada ,  Hideaki Yamasaki ,  David L. O'Meara ,  Gerrit J. Leusink

发明人： Toshio Hasegawa ,  Kunihiro Tada ,  Hideaki Yamasaki ,  David L. O'Meara ,  Gerrit J. Leusink

IPC分类号： H01L21/44

CPC分类号： H01L21/76898 ,  C23C16/42 ,  C23C16/45538 ,  H01L21/28518 ,  H01L21/28562 ,  H01L28/91 ,  H01L29/66181

摘要： A method is provided for forming a metal silicide layer on a substrate. According to one embodiment the method includes providing the substrate in a process chamber, exposing the substrate at a first substrate temperature to a plasma generated from a deposition gas containing a metal precursor, where the plasma exposure forms a conformal metal-containing layer on the substrate in a self-limiting process. The method further includes exposing the metal-containing layer at a second substrate temperature to a reducing gas in the absence of a plasma, where the exposing steps are alternatively performed at least once to form the metal silicide layer, and the deposition gas does not contain the reducing gas. The method provides conformal metal silicide formation in deep trenches with high aspect ratios.

摘要翻译： 提供了一种在衬底上形成金属硅化物层的方法。 根据一个实施例，该方法包括在处理室中提供衬底，将衬底在第一衬底温度下暴露于由含有金属前体的沉积气体产生的等离子体，其中等离子体暴露在衬底上形成保形金属含有层 在一个自限制的过程中。 该方法还包括在不存在等离子体的情况下将第二衬底温度下的含金属层暴露于还原气体，其中暴露步骤交替进行一次以形成金属硅化物层，并且沉积气体不含 还原气。 该方法提供了具有高纵横比的深沟槽中的保形金属硅化物形成。

公开(公告)号：US20130196505A1

公开(公告)日：2013-08-01

申请号：US13427343

申请日：2012-03-22

申请人： Toshio Hasegawa ,  Kunihiro Tada ,  Hideaki Yamasaki ,  David L. O'Meara ,  Gerrit J. Leusink

发明人： Toshio Hasegawa ,  Kunihiro Tada ,  Hideaki Yamasaki ,  David L. O'Meara ,  Gerrit J. Leusink

IPC分类号： H01L21/3205

CPC分类号： H01L21/76898 ,  C23C16/42 ,  C23C16/45538 ,  H01L21/28518 ,  H01L21/28562 ,  H01L28/91 ,  H01L29/66181

摘要： A method is provided for forming a metal silicide layer on a substrate. According to one embodiment the method includes providing the substrate in a process chamber, exposing the substrate at a first substrate temperature to a plasma generated from a deposition gas containing a metal precursor, where the plasma exposure forms a conformal metal-containing layer on the substrate in a self-limiting process. The method further includes exposing the metal-containing layer at a second substrate temperature to a reducing gas in the absence of a plasma, where the exposing steps are alternatively performed at least once to form the metal silicide layer, and the deposition gas does not contain the reducing gas. The method provides conformal metal silicide formation in deep trenches with high aspect ratios.

摘要翻译： 提供了一种在衬底上形成金属硅化物层的方法。 根据一个实施例，该方法包括在处理室中提供衬底，将衬底在第一衬底温度下暴露于由包含金属前体的沉积气体产生的等离子体，其中等离子体暴露在衬底上形成保形的含金属层 在一个自限制的过程中。 该方法还包括在不存在等离子体的情况下将第二衬底温度下的含金属层暴露于还原气体，其中暴露步骤交替进行一次以形成金属硅化物层，并且沉积气体不含 还原气。 该方法提供了具有高纵横比的深沟槽中的保形金属硅化物形成。

公开(公告)号：US07879399B2

公开(公告)日：2011-02-01

申请号：US12193370

申请日：2008-08-18

申请人： Tatsuo Hatano ,  Hideaki Yamasaki

发明人： Tatsuo Hatano ,  Hideaki Yamasaki

IPC分类号： C23C16/16

CPC分类号： C23C16/16 ,  C23C16/4412 ,  C23C16/45527 ,  C23C16/45553

摘要： A CVD method for forming a metal film on a substrate by using a metal carbonyl gas includes a preparing step for setting a vacuum chamber at a vacuum pressure and heating the substrate in the vacuum chamber to a first temperature where the metal carbonyl gas is decomposed. Also included are a supplying step for supplying the metal carbonyl gas into the vacuum chamber while exhausting the vacuum chamber with a first vacuum pumping speed and a removing step for removing a decomposed gas of the metal carbonyl gas by stopping supplying of the metal carbonyl gas and quickly exhausting the vacuum chamber with a second vacuum pumping speed sufficiently higher than the first vacuum pumping speed. The supplying step and the removing step can be repeatedly as desired.

摘要翻译： 通过使用金属羰基气体在基板上形成金属膜的CVD方法包括将真空室设置在真空压力下并将真空室内的基板加热到金属羰基气体分解的第一温度的准备工序。 还包括供给步骤，用于将金属羰基气体供给到真空室中，同时以第一真空泵送速度排出真空室，以及通过停止供应羰基金属气体来除去金属羰基气体的分解气体的去除步骤;以及 以足够高于第一真空泵送速度的第二真空泵送速度快速排出真空室。 可以根据需要反复进行供给步骤和去除步骤。