公开(公告)号：US4841545A

公开(公告)日：1989-06-20

申请号：US76185

申请日：1987-07-21

申请人： Akihiko Endo ,  Shigeki Takeda ,  Hiroshi Takeda

发明人： Akihiko Endo ,  Shigeki Takeda ,  Hiroshi Takeda

IPC分类号： G01S19/37 ,  H03L7/087 ,  H04B1/707 ,  H04B1/7085 ,  H04J13/00

CPC分类号： H04B1/7085 ,  H03L7/087 ,  H04B1/7095

摘要： A synchronous tracking device for a receiver in a direct-spread spectrum communication system in which a carrier frequency and a pseudo noise code for spreading it are coherent. A first circuit tracks the pseudo noise code in the received signal for a predetermined time after synchronous acquisition of the pseudo noise code. A second circuit tracks the pseudo noise code after the first tracking circuit stops tracking, while maintaining a locking condition achieved by the first tracking circuit.

摘要翻译： 一种用于直扩扩频通信系统中的接收机的同步跟踪装置，其中载频和用于扩展它的伪噪声码是相干的。 在伪噪声码的同步获取之后，第一电路在接收信号中跟踪预定时间的伪噪声码。 在第一跟踪电路停止跟踪之后，第二电路跟踪伪噪声码，同时保持由第一跟踪电路实现的锁定状态。

公开(公告)号：US07927972B2

公开(公告)日：2011-04-19

申请号：US12384819

申请日：2009-04-09

申请人： Akihiko Endo ,  Tatsumi Kusaba

发明人： Akihiko Endo ,  Tatsumi Kusaba

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76243 ,  H01L21/30625 ,  H01L21/31111

摘要： Even if an oxygen ion implanted layer in a wafer for active layer is not a completely continuous SiO2 layer but a layer mixed partially with Si or SiOx, it is removed by here is provided a method for producing a bonded wafer in which it is possible to remove an oxygen ion implanted layer effectively as it is by repetitive treatment with an oxidizing solution and HF solution at a step of removing the oxygen ion implanted layer in a bonded wafer.

摘要翻译： 即使在活性层用晶片中的氧离子注入层不是完全连续的SiO 2层，而是与Si或SiO x部分混合的层，所以通过这样除去，提供了一种制造接合晶片的方法，其中可以 通过在去除接合晶片上的氧离子注入层的步骤中用氧化溶液和HF溶液重复处理，有效地除去氧离子注入层。

公开(公告)号：US07867877B2

公开(公告)日：2011-01-11

申请号：US10587725

申请日：2005-01-28

申请人： Etsuro Morita ,  Akihiko Endo

发明人： Etsuro Morita ,  Akihiko Endo

IPC分类号： H01L21/30

CPC分类号： H01L21/76256 ,  H01L21/26533 ,  Y10S438/974

摘要： A method for manufacturing SOI wafers is provided which allows the obtaining of a thin SOI layer having uniform in-plane thickness. In this manufacturing method, an oxygen ion implanted layer is first formed on an active layer wafer. This is then laminated to a base wafer with a embedded oxide film interposed therebetween. The active layer wafer side of the laminated wafer is then ground to remove a portion thereof. The remaining surface side of the active layer wafer is removed by polishing or KOH etching to expose the oxygen ion implanted layer. Oxygen ions are implanted to a uniform depth within the plane of the oxygen ion implanted layer in this oxygen ion implanted layer. Subsequently, oxidizing treatment is carried out to form an oxide film on the exposed surface of the oxygen ion implanted layer. Moreover, this oxide film is removed together with the oxygen ion implanted layer by an HF solution. The remaining portion of the active layer wafer serves as a thin SOI layer.

摘要翻译： 提供一种用于制造SOI晶片的方法，其允许获得具有均匀的面内厚度的薄SOI层。 在该制造方法中，首先在有源层晶片上形成氧离子注入层。 然后将其层压到其间插入有氧化膜的基底晶片。 然后将层压晶片的有源层晶片侧研磨以除去其一部分。 通过抛光或KOH蚀刻去除有源层晶片的剩余表面侧以暴露氧离子注入层。 在该氧离子注入层中，将氧离子注入到氧离子注入层的平面内的均匀深度。 随后，进行氧化处理以在氧离子注入层的暴露表面上形成氧化膜。 此外，通过HF溶液与氧离子注入层一起除去该氧化膜。 有源层晶片的剩余部分用作薄的SOI层。

公开(公告)号：US07767549B2

公开(公告)日：2010-08-03

申请号：US11957674

申请日：2007-12-17

申请人： Hidehiko Okuda ,  Tatsumi Kusaba ,  Akihiko Endo

发明人： Hidehiko Okuda ,  Tatsumi Kusaba ,  Akihiko Endo

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L21/76251 ,  H01L21/76256

摘要： The present invention provides a method of manufacturing a bonded wafer. The method comprises an oxidation step in which an oxide film is formed on at least one surface of a base wafer, a bonding step in which the base wafer on which the oxide film has been formed is bonded to a top wafer to form a bonded wafer, and a thinning step in which the top wafer included in the bonded wafer is thinned. The oxidation step comprises heating the base wafer to a heating temperature ranging from 800 to 1300° C. at a rate of temperature increase ranging from 1 to 300° C./second in an oxidizing atmosphere, and the bonding step is carried out so as to position the oxide film formed in the oxidation step at an interface of the top wafer and the base wafer.

摘要翻译： 本发明提供一种制造接合晶片的方法。 该方法包括在基底晶片的至少一个表面上形成氧化膜的氧化步骤，其上形成有氧化膜的基底晶片结合到顶部晶片以形成接合晶片的接合步骤 以及其中包含在接合晶片中的顶部晶片变薄的变薄步骤。 氧化步骤包括在氧化气氛中以1〜300℃/秒的升温速度将基底晶片加热至800〜1300℃的加热温度，并进行接合工序，使 将在氧化步骤中形成的氧化膜定位在顶部晶片和基底晶片的界面处。

公开(公告)号：US20100184270A1

公开(公告)日：2010-07-22

申请号：US12749453

申请日：2010-03-29

申请人： Akihiko Endo ,  Tatsumi Kusaba

发明人： Akihiko Endo ,  Tatsumi Kusaba

IPC分类号： H01L21/762

CPC分类号： H01L21/187 ,  H01L21/76256

摘要： A bonded wafer is produced by comprising a step of implanting oxygen ions from a surface of a wafer for active layer to form an oxygen ion implanted layer at a given position inside the wafer for active layer; a step of bonding the wafer of active layer to a wafer for support substrate directly or through an insulating film; a step of subjecting the resulting bonded wafer to a heat treatment for increasing a bonding strength; a step of removing a portion of the wafer for active layer in the bonded wafer to a given position not exposing the oxygen ion implanted layer by a given method; a step of exposing the entire surface of the oxygen ion implanted layer; and a step of removing the exposed oxygen ion implanted layer to obtain an active layer of a given thickness, wherein the step of exposing the entire surface of the oxygen ion implanted layer is carried out by a dry etching under given conditions.

摘要翻译： 通过包括从用于活性层的晶片的表面注入氧离子以在用于活性层的晶片内的给定位置处形成氧离子注入层的步骤来生产键合晶片; 将活性层的晶片直接或通过绝缘膜将支撑基板的晶片接合到支撑基板的晶片的步骤; 对所得到的接合晶片进行热处理以提高接合强度的步骤; 将接合晶片中的有源层的晶片的一部分去除到通过给定方法不暴露氧离子注入层的给定位置的步骤; 暴露氧离子注入层的整个表面的步骤; 以及去除曝光的氧离子注入层以获得给定厚度的有源层的步骤，其中通过在给定条件下的干蚀刻来进行暴露氧离子注入层的整个表面的步骤。

公开(公告)号：US20090298261A1

公开(公告)日：2009-12-03

申请号：US12473122

申请日：2009-05-27

申请人： Akihiko Endo ,  Tatsumi Kusaba

发明人： Akihiko Endo ,  Tatsumi Kusaba

IPC分类号： H01L21/762

CPC分类号： H01L21/187 ,  H01L21/76256

摘要： A bonded wafer is produced by comprising a step of implanting oxygen ions from a surface of a wafer for active layer to form an oxygen ion implanted layer at a given position inside the wafer for active layer; a step of bonding the wafer of active layer to a wafer for support substrate directly or through an insulating film; a step of subjecting the resulting bonded wafer to a heat treatment for increasing a bonding strength; a step of removing a portion of the wafer for active layer in the bonded wafer to a given position not exposing the oxygen ion implanted layer by a given method; a step of exposing the entire surface of the oxygen ion implanted layer; and a step of removing the exposed oxygen ion implanted layer to obtain an active layer of a given thickness, wherein the step of exposing the entire surface of the oxygen ion implanted layer is carried out by a dry etching under given conditions.

摘要翻译： 通过包括从用于活性层的晶片的表面注入氧离子以在用于活性层的晶片内的给定位置处形成氧离子注入层的步骤来生产键合晶片; 将活性层的晶片直接或通过绝缘膜将支撑基板的晶片接合到支撑基板的晶片的步骤; 对所得到的接合晶片进行热处理以提高接合强度的步骤; 将接合晶片中的有源层的晶片的一部分去除到通过给定方法不暴露氧离子注入层的给定位置的步骤; 暴露氧离子注入层的整个表面的步骤; 以及去除曝光的氧离子注入层以获得给定厚度的有源层的步骤，其中通过在给定条件下的干蚀刻来进行暴露氧离子注入层的整个表面的步骤。

公开(公告)号：US07442623B2

公开(公告)日：2008-10-28

申请号：US11562162

申请日：2006-11-21

申请人： Akihiko Endo ,  Tatsumi Kusaba

发明人： Akihiko Endo ,  Tatsumi Kusaba

IPC分类号： H01L21/44

CPC分类号： H01L21/76254 ,  B08B3/08 ,  B08B7/0035 ,  H01L21/02052 ,  H01L21/3065 ,  H01L21/76256

摘要： A high quality bonded substrate is obtained in which generation of microprotrusions and cracked particles are restricted on a surface of an active layer of the bonded substrate and the surface of the active layer is flattened. A laminated body is formed by overlapping a first semiconductor substrate serving as an active layer onto a second semiconductor substrate serving as a support substrate via an oxide film or without an oxide film; the active layer is formed by forming a thin film from the first semiconductor substrate; and the surface of the active layer is flattened by vapor-phase etching. After forming a thin film from the first semiconductor substrate and before flattening the surface of the active layer by the vapor-phase etching, an organic substance adhering to the surface of the active layer is removed and a native oxide film generated on the surface of the active layer is removed after removing the organic substance.

摘要翻译： 获得了在键合衬底的有源层的表面上限制微突起和裂纹粒子的产生并且活性层的表面变平的高质量的键合衬底。 通过氧化膜或不含氧化膜将作为有源层的第一半导体衬底与用作支撑衬底的第二半导体衬底重叠形成层叠体; 有源层通过从第一半导体衬底形成薄膜而形成; 并且通过气相蚀刻使有源层的表面变平。 在从第一半导体衬底形成薄膜之后，并且通过气相蚀刻在活性层的表面平坦化之前，去除附着在有源层的表面上的有机物质，并且在表面上产生自然氧化膜 去除有机物后去除活性层。

公开(公告)号：US20080014716A1

公开(公告)日：2008-01-17

申请号：US11855736

申请日：2007-09-14

申请人： Akihiko Endo ,  Tatsumi Kusaba ,  Hidehiko Okuda ,  Etsurou Morita

发明人： Akihiko Endo ,  Tatsumi Kusaba ,  Hidehiko Okuda ,  Etsurou Morita

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： The object of the invention is to provide a method for manufacturing an SOI layer which is devoid of damages, has a reduced variation in thickness, and is uniform in thickness. The object is met by providing a method for manufacturing an SOI substrate comprising the steps of forming an oxide film at least on one surface of a first silicon substrate, implanting hydrogen ions from the surface of the first silicon substrate thereby forming an ion-implantation zone in the interior of the first silicon substrate, bonding the first silicon substrate over a second silicon substrate with the oxide film interposed thereby forming a laminated assembly, subjecting the laminated assembly to a first heating treatment consisting of heating at a specified temperature, so that the first silicon substrate is split at the ion-implantation zone thereby manufacturing a bonded substrate, flattening the exposed surface of the SOI layer by subjecting the bonded substrate to wet etching, subjecting the bonded substrate to a second heating treatment consisting of heating at 750 to 900° C. in an oxidative atmosphere thereby reducing damages inflicted to the SOI layer, and subjecting the resulting bonded substrate to a third heating treatment consisting of heating at 900 to 1200° C. thereby enhancing the bonding strength of the bonded substrate.

摘要翻译： 本发明的目的是提供一种制造SOI层的方法，该方法没有损坏，厚度变化减小，厚度均匀。 通过提供一种用于制造SOI衬底的方法来满足目的，包括以下步骤：在第一硅衬底的至少一个表面上形成氧化物膜，从第一硅衬底的表面注入氢离子，从而形成离子注入区 在第一硅衬底的内部，将第一硅衬底与第二硅衬底接合，其中介于氧化膜之间，从而形成层叠组件，对层压组件进行第一加热处理，该加热处理由在特定温度下加热， 第一硅衬底在离子注入区分裂，从而制造键合衬底，通过对键合衬底进行湿蚀刻，使SOI层的暴露表面平坦化，对接合衬底进行第二次加热处理，该加热处理由750-900℃ 在氧化气氛中，从而降低对SOI层的损害，并使其受到影响 所得到的键合衬底进行第三加热处理，其由900至1200℃的加热组成，从而提高键合衬底的结合强度。

公开(公告)号：US20060177991A1

公开(公告)日：2006-08-10

申请号：US11346256

申请日：2006-02-03

申请人： Satoshi Murakami ,  Toshiaki Ono ,  Akihiko Endo

发明人： Satoshi Murakami ,  Toshiaki Ono ,  Akihiko Endo

IPC分类号： H01L21/46

CPC分类号： H01L21/76254

摘要： By using, in the so-called Smart Cut process comprising the steps of bonding an ion-implanted active layer wafer to a base wafer and later splitting off the base wafer to produce a SOI wafer, a wafer doped with C in a single crystal ingot growing process (desirably to a carbon concentration of not lower than 1×1016 atoms/cm3) as the active layer wafer, it becomes possible to exhibit the effect of inhibiting agglomeration of interstitial Si atoms and prevent development of stacking faults even when the SOI wafer is subjected to thermal oxidation treatment. Furthermore, the technique of sacrificial oxidation can be applied to production of SOI wafers and, thus, a damaged layer formed on the SOI layer surface can be removed and surface roughness can be improved without impairing crystalline integrity and, further, SOI layer thickness can be efficiently reduced.

摘要翻译： 通过在所谓的智能切割工艺中使用包括将离子注入的活性层晶片粘合到基底晶片并随后将基底晶片分离以产生SOI晶片的步骤，在单晶锭中掺杂有C的晶片 作为活性层晶片的生长过程（优选为不低于1×10 16原子/ cm 3的碳浓度）可以显示抑制聚集的作用 间隙Si原子，并且即使当SOI晶片经受热氧化处理时也防止堆垛层错的发展。 此外，牺牲氧化的技术可以应用于SOI晶片的生产，因此可以去除在SOI层表面上形成的损伤层，并且可以在不损害晶体完整性的情况下改善表面粗糙度，并且还可以将SOI层厚度 有效减少

公开(公告)号：US08110486B2

公开(公告)日：2012-02-07

申请号：US11649943

申请日：2007-01-05

申请人： Koji Matsumoto ,  Tomoyuki Hora ,  Akihiko Endo ,  Etsurou Morita ,  Masaharu Ninomiya

发明人： Koji Matsumoto ,  Tomoyuki Hora ,  Akihiko Endo ,  Etsurou Morita ,  Masaharu Ninomiya

IPC分类号： H01L21/20

CPC分类号： H01L21/7624 ,  H01L21/02532 ,  H01L21/0262

摘要： A semiconductor wafer is produced at a step of forming a lattice relaxation or a partly lattice-relaxed strain relaxation SiGe layer on an insulating layer in a SOI wafer comprising an insulating layer and a SOI layer, wherein at least an upper layer side portion of the SiGe layer is formed on the SOI layer at a gradient of Ge concentration gradually decreasing toward the surface and then subjected to a heat treatment in an oxidizing atmosphere.

摘要翻译： 在包括绝缘层和SOI层的SOI晶片的绝缘层上形成晶格弛豫或部分晶格弛豫应变弛豫SiGe层的步骤中制造半导体晶片，其中至少上述 SiGe层以Ge浓度逐渐向表面逐渐减小的梯度形成在SOI层上，然后在氧化气氛中进行热处理。