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公开(公告)号：US20070284653A1
公开(公告)日：2007-12-13
申请号：US11785801
申请日：2007-04-20
IPC分类号： H01L29/792
CPC分类号： H01L29/7786 , H01L29/1066 , H01L29/2003 , H01L29/452
摘要： A semiconductor device includes a first group III-V nitride semiconductor layer, a second group III-V nitride semiconductor layer having a larger band gap than the first group Ill-V nitride semiconductor layer and at least one ohmic electrode successively formed on a substrate. The ohmic electrode is formed so as to have a base portion penetrating the second group III-V nitride semiconductor layer and reaching a portion of the first group III-V nitride semiconductor layer disposed beneath a two-dimensional electron gas layer. An impurity doped layer is formed in portions of the first group III-V nitride semiconductor layer and the second group III-V nitride semiconductor layer in contact with the ohmic electrode.
摘要翻译： 半导体器件包括第一III-V族氮化物半导体层，具有比第一组III-V族氮化物半导体层更大的带隙的第二III-V族氮化物半导体层和在衬底上依次形成的至少一个欧姆电极。 欧姆电极形成为具有穿透第二III-V族氮化物半导体层并且到达设置在二维电子气体层下方的第一III-V族氮化物半导体层的一部分的基极部分。 在与欧姆电极接触的第一III-V族氮化物半导体层和第二III-V族氮化物半导体层的部分中形成杂质掺杂层。
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公开(公告)号：US20060108605A1
公开(公告)日：2006-05-25
申请号：US11271833
申请日：2005-11-14
IPC分类号： H01L29/739
CPC分类号： H01L29/66143 , H01L29/872
摘要： A Schottky barrier diode includes a first semiconductor layer and a second semiconductor layer successively formed above a substrate; and a high-resistance region formed in the first semiconductor layer and the second semiconductor layer and having higher resistance than the first semiconductor layer and the second semiconductor layer. A Schottky electrode and an ohmic electrode spaced from each other are formed on the second semiconductor layer in a portion surrounded with the high-resistance region.
摘要翻译： 肖特基势垒二极管包括依次形成在衬底上的第一半导体层和第二半导体层; 以及形成在第一半导体层和第二半导体层中并且具有比第一半导体层和第二半导体层更高的电阻的高电阻区域。 彼此间隔开的肖特基电极和欧姆电极在被高电阻区域包围的部分中形成在第二半导体层上。
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公开(公告)号：US20070126026A1
公开(公告)日：2007-06-07
申请号：US11593016
申请日：2006-11-06
IPC分类号： H01L31/00
CPC分类号： H01L29/7787 , H01L23/3732 , H01L29/2003 , H01L29/66462 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a first group-III nitride semiconductor layer formed on a substrate; a second group-III nitride semiconductor layer made of a single layer or two or more layers, formed on the first group-III nitride semiconductor layer, and acting as a barrier layer; a source electrode, a drain electrode, and a gate electrode formed on the second group-III nitride semiconductor layer, the gate electrode controlling a current flowing between the source and drain electrodes; and a heat radiation film with high thermal conductivity which covers, as a surface passivation film, the entire surface other than a bonding pad.
摘要翻译： 半导体器件包括：形成在衬底上的第一III族氮化物半导体层; 形成在第一III族氮化物半导体层上并且用作阻挡层的由单层或两层或更多层制成的第二III族氮化物半导体层; 形成在所述第二III族氮化物半导体层上的源电极，漏电极和栅极，所述栅电极控制在所述源极和漏极之间流动的电流; 以及具有高导热性的热辐射膜，其覆盖除了焊盘之外的整个表面作为表面钝化膜。
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公开(公告)号：US07375407B2
公开(公告)日：2008-05-20
申请号：US11271833
申请日：2005-11-14
IPC分类号： H01L29/47
CPC分类号： H01L29/66143 , H01L29/872
摘要： A Schottky barrier diode includes a first semiconductor layer and a second semiconductor layer successively formed above a substrate; and a high-resistance region formed in the first semiconductor layer and the second semiconductor layer and having higher resistance than the first semiconductor layer and the second semiconductor layer. A Schottky electrode and an ohmic electrode spaced from each other are formed on the second semiconductor layer in a portion surrounded with the high-resistance region.
摘要翻译： 肖特基势垒二极管包括依次形成在衬底上的第一半导体层和第二半导体层; 以及形成在第一半导体层和第二半导体层中并且具有比第一半导体层和第二半导体层更高的电阻的高电阻区域。 彼此间隔开的肖特基电极和欧姆电极在被高电阻区域包围的部分中形成在第二半导体层上。
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公开(公告)号：US20060108659A1
公开(公告)日：2006-05-25
申请号：US11272878
申请日：2005-11-15
IPC分类号： H01L31/07
CPC分类号： H01L29/872 , H01L21/26506 , H01L27/0605 , H01L27/0814 , H01L29/0692 , H01L29/417 , H01L29/66143
摘要： A Schottky barrier diode includes a first semiconductor layer and a second semiconductor layer successively formed above a semiconductor substrate with a buffer layer formed between the first and second semiconductor layers and the semiconductor substrate. A Schottky electrode and an ohmic electrode spaced from each other are formed on the second semiconductor layer, and a back face electrode is formed on the back face of the semiconductor substrate. The Schottky electrode or the ohmic electrode is electrically connected to the back face electrode through a via penetrating through at least the buffer layer.
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公开(公告)号：US07078743B2
公开(公告)日：2006-07-18
申请号：US10834362
申请日：2004-04-29
申请人： Tomohiro Murata , Yutaka Hirose , Yoshito Ikeda , Tsuyoshi Tanaka , Kaoru Inoue , Daisuke Ueda , Yasuhiro Uemoto
发明人： Tomohiro Murata , Yutaka Hirose , Yoshito Ikeda , Tsuyoshi Tanaka , Kaoru Inoue , Daisuke Ueda , Yasuhiro Uemoto
IPC分类号： H01L31/0328
CPC分类号： H01L29/7787 , H01L21/02425 , H01L21/02458 , H01L21/0254 , H01L29/2003 , H01L29/4175 , H01L29/41766
摘要： A semiconductor device has: a buffer layer formed on a conductive substrate and made of AlxGa1-xN with a high resistance; an element-forming layer formed on the buffer layer, having a channel layer, and made of undoped GaN and N-type AlyGa1-yN; and a source electrode, a drain electrode and a gate electrode which are selectively formed on the element-forming layer. The source electrode is filled in a through hole provided in the buffer layer and the element-forming layer, and is thus electrically connected to the conductive substrate.
摘要翻译： 半导体器件具有：形成在导电基板上并具有高电阻的Al x Ga 1-x N的缓冲层; 形成在缓冲层上的元件形成层，具有沟道层，由未掺杂的GaN和N型Al y Ga 1-y N制成; 以及选择性地形成在元件形成层上的源电极，漏电极和栅电极。 源电极被填充在设置在缓冲层和元件形成层中的通孔中，因此电连接到导电基板。
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公开(公告)号：US07339207B2
公开(公告)日：2008-03-04
申请号：US11455631
申请日：2006-06-20
申请人： Tomohiro Murata , Yutaka Hirose , Yoshito Ikeda , Tsuyoshi Tanaka , Kaoru Inoue , Daisuke Ueda , Yasuhiro Uemoto
发明人： Tomohiro Murata , Yutaka Hirose , Yoshito Ikeda , Tsuyoshi Tanaka , Kaoru Inoue , Daisuke Ueda , Yasuhiro Uemoto
IPC分类号： H01L31/0328
CPC分类号： H01L29/7787 , H01L21/02425 , H01L21/02458 , H01L21/0254 , H01L29/2003 , H01L29/4175 , H01L29/41766
摘要： A semiconductor device has: a buffer layer formed on a conductive substrate and made of AlxGa1−xN with a high resistance; an element-forming layer formed on the buffer layer, having a channel layer, and made of undoped GaN and N-type AlyGa1−N; and a source electrode, a drain electrode and a gate electrode which are selectively formed on the element-forming layer. The source electrode is filled in a through hole provided in the buffer layer and the element-forming layer, and is thus electrically connected to the conductive substrate.
摘要翻译： 半导体器件具有：形成在导电衬底上并具有高电阻的Al x Ga 1-x N的缓冲层; 形成在缓冲层上的元件形成层，具有沟道层，由未掺杂的GaN和N型Al y Ga 1-y N构成; 以及选择性地形成在元件形成层上的源电极，漏电极和栅电极。
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公开(公告)号：US07187014B2
公开(公告)日：2007-03-06
申请号：US10862452
申请日：2004-06-08
IPC分类号： H01L29/772
CPC分类号： H01L29/7787 , H01L29/2003
摘要： A semiconductor device has a sapphire substrate, a semiconductor layer made of GaN provided on the sapphire substrate, a multilayer film provided on the semiconductor layer, and an electrode in ohmic contact with the multilayer film. The multilayer film has been formed by alternately stacking two types of semiconductor layers having different amounts of piezopolarization or different amounts of spontaneous polarization and each containing an n-type impurity so that electrons are induced at the interface between the two types of semiconductor layers. This allows the contact resistance between the electrode and the multilayer film and a parasitic resistance in a current transmission path to be reduced to values lower than in a conventional semiconductor device.
摘要翻译： 半导体器件具有蓝宝石衬底，设置在蓝宝石衬底上的由GaN制成的半导体层，设置在半导体层上的多层膜和与该多层膜欧姆接触的电极。 已经通过交替地堆叠具有不同量的极化或不同量的自发极化的两种类型的半导体层，并且每个含有n型杂质，以便在两种类型的半导体层之间的界面处诱导电子而形成多层膜。 这允许电极和多层膜之间的接触电阻和电流传输路径中的寄生电阻降低到比常规半导体器件中的值更低的值。
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公开(公告)号：US20060289894A1
公开(公告)日：2006-12-28
申请号：US11455631
申请日：2006-06-20
申请人： Tomohiro Murata , Yutaka Hirose , Yoshito Ikeda , Tsuyoshi Tanaka , Kaoru Inoue , Daisuke Ueda , Yasuhiro Uemoto
发明人： Tomohiro Murata , Yutaka Hirose , Yoshito Ikeda , Tsuyoshi Tanaka , Kaoru Inoue , Daisuke Ueda , Yasuhiro Uemoto
IPC分类号： H01L31/00
CPC分类号： H01L29/7787 , H01L21/02425 , H01L21/02458 , H01L21/0254 , H01L29/2003 , H01L29/4175 , H01L29/41766
摘要： A semiconductor device has: a buffer layer formed on a conductive substrate and made of AlxGa1−xN with a high resistance; an element-forming layer formed on the buffer layer, having a channel layer, and made of undoped GaN and N-type AlyGa1−N; and a source electrode, a drain electrode and a gate electrode which are selectively formed on the element-forming layer. The source electrode is filled in a through hole provided in the buffer layer and the element-forming layer, and is thus electrically connected to the conductive substrate.
摘要翻译： 半导体器件具有：形成在导电衬底上并具有高电阻的Al x Ga 1-x N的缓冲层; 形成在缓冲层上的元件形成层，具有沟道层，并由未掺杂的GaN和N型Al x Ga 1 -N构成; 以及选择性地形成在元件形成层上的源电极，漏电极和栅电极。 源电极被填充在设置在缓冲层和元件形成层中的通孔中，因此电连接到导电基板。
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公开(公告)号：US20050082568A1
公开(公告)日：2005-04-21
申请号：US10862452
申请日：2004-06-08
IPC分类号： H01L21/28 , H01L21/338 , H01L29/20 , H01L29/417 , H01L29/778 , H01L29/812 , H01L31/0328
CPC分类号： H01L29/7787 , H01L29/2003
摘要： A semiconductor device has a sapphire substrate, a semiconductor layer made of GaN provided on the sapphire substrate, a multilayer film provided on the semiconductor layer, and an electrode in ohmic contact with the multilayer film. The multilayer film has been formed by alternately stacking two types of semiconductor layers having different amounts of piezopolarization or different amounts of spontaneous polarization and each containing an n-type impurity so that electrons are induced at the interface between the two types of semiconductor layers. This allows the contact resistance between the electrode and the multilayer film and a parasitic resistance in a current transmission path to be reduced to values lower than in a conventional semiconductor device.
摘要翻译： 半导体器件具有蓝宝石衬底，设置在蓝宝石衬底上的由GaN制成的半导体层，设置在半导体层上的多层膜和与该多层膜欧姆接触的电极。 已经通过交替地堆叠具有不同量的极化或不同量的自发极化的两种类型的半导体层，并且每个含有n型杂质，以便在两种类型的半导体层之间的界面处诱导电子而形成多层膜。 这允许电极和多层膜之间的接触电阻和电流传输路径中的寄生电阻降低到比常规半导体器件中的值更低的值。
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