公开(公告)号：US08283720B2

公开(公告)日：2012-10-09

申请号：US12050415

申请日：2008-03-18

申请人： Wataru Saito ,  Syotaro Ono ,  Masakatsu Takashita ,  Yauto Sumi ,  Masaru Izumisawa ,  Wataru Sekine ,  Hiroshi Ohta ,  Shoichiro Kurushima

发明人： Wataru Saito ,  Syotaro Ono ,  Masakatsu Takashita ,  Yauto Sumi ,  Masaru Izumisawa ,  Wataru Sekine ,  Hiroshi Ohta ,  Shoichiro Kurushima

IPC分类号： H01L29/00 ,  H01L29/66

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095

摘要： A power semiconductor device includes: a first semiconductor layer; a second semiconductor layer and a third semiconductor layer provided in an upper portion of the first semiconductor layer and alternately arranged parallel to an upper surface of the first semiconductor layer; a plurality of fourth semiconductor layers provided on the third semiconductor layer; a fifth semiconductor layer selectively formed in an upper surface of each of the fourth semiconductor layers; a control electrode; a gate insulating film; a first main electrode provided on a lower surface of the first semiconductor layer; and a second main electrode provided on the fourth and the fifth semiconductor layers. Sum of the amount of impurities in the second semiconductor layer and the amount of impurities in the third semiconductor layer at an end on the second main electrode side of the second semiconductor layer and the third semiconductor layer is smaller than the sum at a center of the second semiconductor layer and the third semiconductor layer in the direction from the first main electrode to the second main electrode.

摘要翻译： 功率半导体器件包括：第一半导体层; 第二半导体层和第三半导体层，设置在所述第一半导体层的上部并且交替地平行于所述第一半导体层的上表面布置; 设置在所述第三半导体层上的多个第四半导体层; 选择性地形成在每个第四半导体层的上表面中的第五半导体层; 控制电极; 栅极绝缘膜; 设置在所述第一半导体层的下表面上的第一主电极; 以及设置在第四和第五半导体层上的第二主电极。 第二半导体层中的杂质量和第二半导体层的第二主电极侧端部的第三半导体层中的杂质量的和小于第二半导体层的第二主电极侧的和 第二半导体层和第三半导体层在从第一主电极到第二主电极的方向上。

公开(公告)号：US20120116095A1

公开(公告)日：2012-05-10

申请号：US13383513

申请日：2010-07-15

申请人： Akito Yasuhara ,  Kazunari Sakagami ,  Hiroshi Ohta ,  Masato Hayashi ,  Yoshihisa Shirasaki ,  Shuji Yamamoto ,  Youichi Shimazaki ,  Yuko Araki ,  Kumi Abe ,  Xiang-Min Sun

发明人： Akito Yasuhara ,  Kazunari Sakagami ,  Hiroshi Ohta ,  Masato Hayashi ,  Yoshihisa Shirasaki ,  Shuji Yamamoto ,  Youichi Shimazaki ,  Yuko Araki ,  Kumi Abe ,  Xiang-Min Sun

IPC分类号： C07D249/12 ,  C07D233/14

CPC分类号： C07D249/10

摘要： The present invention aims to provide novel compounds represented by formula [I] or pharmaceutically acceptable salts thereof: which are useful for prevention or treatment of diseases such as schizophrenia, Alzheimer's disease, cognitive impairment, dementia, anxiety disorders (e.g., generalized anxiety disorder, panic disorder, obsessive-compulsive disorder, social anxiety disorder, post-traumatic stress disorder, specific phobias, acute stress disorder), depression, drug dependence, convulsion, tremor, pain, or sleep disorders, based on their inhibitory effect against glycine uptake.

摘要翻译： 本发明旨在提供由式[I]表示的新化合物或其药学上可接受的盐：其可用于预防或治疗诸如精神分裂症，阿尔茨海默病，认知障碍，痴呆，焦虑症（例如广泛性焦虑症， 基于它们对甘氨酸摄取的抑制效果，恐慌症，强迫症，社交焦虑症，创伤后应激障碍，特异性恐惧症，急性应激障碍），抑郁症，药物依赖性，惊厥，震颤，疼痛或睡眠障碍。

公开(公告)号：US08030499B2

公开(公告)日：2011-10-04

申请号：US11883236

申请日：2006-01-30

申请人： Yoshinori Sekiguchi ,  Takeshi Kuwada ,  Masato Hayashi ,  Dai Nozawa ,  Yuri Amada ,  Tsuyoshi Shibata ,  Shuji Yamamoto ,  Hiroshi Ohta ,  Taketoshi Okubo ,  Takeshi Koami

发明人： Yoshinori Sekiguchi ,  Takeshi Kuwada ,  Masato Hayashi ,  Dai Nozawa ,  Yuri Amada ,  Tsuyoshi Shibata ,  Shuji Yamamoto ,  Hiroshi Ohta ,  Taketoshi Okubo ,  Takeshi Koami

IPC分类号： C07D209/04 ,  A61K31/404

CPC分类号： C07D401/12 ,  C07C309/87 ,  C07D209/38 ,  C07D209/40 ,  C07D401/04 ,  C07D401/14 ,  C07D403/04 ,  C07D403/12 ,  C07D403/14 ,  C07D405/14 ,  C07D413/04 ,  C07D417/12

摘要： It is intended to provide a drug which is efficacious against pathological conditions relating to arginine-vasopressin V1b receptor. More particularly speaking, it is intended to provide a drug which has a therapeutic or preventive effect on depression, anxiety, Alzheimer's disease, Parkinson's disease, Huntington's chorea, eating disorders, hypertension, digestive diseases, drug addiction, epilepsy, brain infarction, brain ischemia, brain edema, head injury, inflammation, immune diseases, alopecia and so on. As the results of intensive studies, a novel 1,3-dihydro-2H-indol-2-one compound and a pyrrolidin-2-one compound fused with a heteroaromatic ring, which are highly selective antagonists of arginine-vasopressin V1b receptor, have high metabolic stabilities and show favorable brain penetration and high plasma concentrations, are found, thereby achieving the above objective.

摘要翻译： 旨在提供对精氨酸 - 加压素V1b受体有关的病理状况有效的药物。 更具体地说，它旨在提供一种对抑郁，焦虑，阿尔茨海默病，帕金森病，亨廷顿氏舞蹈病，进食障碍，高血压，消化系统疾病，药物成瘾，癫痫，脑梗死，脑缺血具有治疗或预防作用的药物 ，脑水肿，头部损伤，炎症，免疫疾病，脱发等。 作为深入研究的结果，作为精氨酸 - 加压素V1b受体的高度选择性拮抗剂的与杂芳环稠合的新的1,3-二氢-2H-吲哚-2-酮化合物和吡咯烷-2-酮化合物具有 发现高代谢稳定性并显示有利的脑渗透和高血浆浓度，从而实现上述目的。

公开(公告)号：US07989910B2

公开(公告)日：2011-08-02

申请号：US12252872

申请日：2008-10-16

申请人： Wataru Saito ,  Syotaro Ono ,  Masaru Izumisawa ,  Yasuto Sumi ,  Hiroshi Ohta ,  Wataru Sekine ,  Nana Hatano

发明人： Wataru Saito ,  Syotaro Ono ,  Masaru Izumisawa ,  Yasuto Sumi ,  Hiroshi Ohta ,  Wataru Sekine ,  Nana Hatano

IPC分类号： H01L29/66

CPC分类号： H01L29/0634 ,  H01L29/0615 ,  H01L29/0638 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/41741 ,  H01L29/7811

摘要： A semiconductor device includes an n+ type semiconductor substrate 1 and a super junction region that has, on the top of the substrate 1, an n and p type pillar regions 2 and 3 provided alternately. The device also includes, in the top surface of the super junction region, a p type base region 4 and an n type source layer 5. The device also includes a gate electrode 7 on the region 4 and layer 5 via a gate-insulating film 6, a drain electrode 9 on the bottom of the substrate 1, and a source electrode 8 on the top of the substrate 1. In the top surface of the super junction region in the terminal region, a RESURF region 10 is formed. The RESURF region has a comb-like planar shape with repeatedly-formed teeth having tips facing the end portion of the terminal region.

摘要翻译： 半导体器件包括n +型半导体衬底1和超结区，其在衬底1的顶部上交替设置n和p型柱状区域2,3。 该器件还在超结区域的顶表面中包括ap型基极区域4和n型源极层5.该器件还包括位于区域4上的栅电极7和通过栅极绝缘膜6的层5 ，基板1底部的漏电极9以及基板1顶部的源极8.在端子区域的超结区域的上表面形成有RESURF区域10。 RESURF区域具有梳状平面形状，具有重复形成的齿，其尖端面向终端区域的端部。

公开(公告)号：US07989066B2

公开(公告)日：2011-08-02

申请号：US10869832

申请日：2004-06-18

申请人： Naohiro Sonobe ,  Hiroshi Ohta ,  Hideaki Sato ,  Yo Otani

发明人： Naohiro Sonobe ,  Hiroshi Ohta ,  Hideaki Sato ,  Yo Otani

IPC分类号： B32B9/00

CPC分类号： C04B35/532 ,  B22F2003/1042 ,  C04B2235/3217 ,  C04B2235/48 ,  C04B2235/528 ,  C04B2235/5427 ,  C04B2235/604 ,  C04B2235/6581 ,  C04B2235/77 ,  C04B2235/94 ,  C04B2235/9623 ,  Y10T428/30

摘要： A carbonaceous support member for a high-temperature heat-treated metal molding object, particularly a setter for heat-treatment in powder metallurgy, is formed as a carbon-ceramic composite shaped product having a bulk density of 1.2-1.6 g/ml and including a carbonaceous matrix and 3-20 wt. % of ceramic particles which are uniformly dispersed in the carbonaceous matrix and partly exposed to the surface of the composite. The support member can effectively prevent carburization of a metal molding object supported thereby during the heat-treatment without causing a problem of peeling of coating layer as encountered in a ceramic-coated support member. The support member may be prepared by compression molding of a powdery mixture of a fine carbon precursor and ceramic particles, followed by heating at 1000-2000° C. to carbonize the fine carbon precursor.

摘要翻译： 形成用于高温热处理的金属成型体的碳质支撑构件，特别是粉末冶金用热处理装置，其为堆积密度为1.2〜1.6g / ml的碳陶瓷复合成形体， 碳质基质和3-20重量％ ％的陶瓷颗粒均匀地分散在碳质基质中并且部分地暴露于复合材料的表面。 支撑构件可以有效地防止在热处理期间由其支撑的金属模制物体的渗碳，而不会引起如陶瓷涂覆的支撑构件中遇到的涂层剥落的问题。 支撑构件可以通过压缩成型细碳前体和陶瓷颗粒的粉末混合物，然后在1000-2000℃加热以使细碳前体碳化来制备。

公开(公告)号：US07960579B2

公开(公告)日：2011-06-14

申请号：US10562018

申请日：2004-06-25

申请人： Akito Yasuhara ,  Kazunari Sakagami ,  Hiroshi Ohta ,  Atsuro Nakazato

发明人： Akito Yasuhara ,  Kazunari Sakagami ,  Hiroshi Ohta ,  Atsuro Nakazato

IPC分类号： A61K31/21 ,  C07C69/74 ,  C07C61/12

CPC分类号： C07C229/50 ,  C07D307/88

摘要： A drug effective for the treatment and prevention of psychiatric disorders such as schizophrenia, anxiety and related ailments thereof, depression, bipolar disorder and epilepsy. The drug antagonizes the action of group II metabotropic glutamate receptors and shows high activity in oral administrationA 2-amino-bicyclo[3.1.0]hexane-2,6-dicarboxylic ester derivative represented by formula [I] [wherein R1 and R2 are identical or different, and each represents a hydrogen atom, a C1-10alkyl group or the like; X represents a hydrogen atom or a fluorine atom; Y represents —OCHR3R4 or the like (wherein R3 and R4 are identical or different, and each represents a hydrogen atom, a C1-10alkyl group or the like; and n represents integer 1 or 2)], a pharmaceutically acceptable salt thereof or a hydrate thereof.

摘要翻译： 一种有效治疗和预防精神疾病如精神分裂症，焦虑及其相关疾病，抑郁症，双相情感障碍和癫痫的药物。 该药物拮抗II型代谢型谷氨酸受体的作用，并且在口服给药中表现出高活性。由式[I]表示的2-氨基 - 双环[3.1.0]己烷-2,6-二羧酸酯衍生物[其中R1和R2为 相同或不同，并且各自表示氢原子，C 1-10烷基等; X表示氢原子或氟原子; Y表示-OCHR 3 R 4等（其中R 3和R 4相同或不同，并且各自表示氢原子，C 1-10烷基等; n表示1或2的整数）]，其药学上可接受的盐或 水合物。

公开(公告)号：US07919824B2

公开(公告)日：2011-04-05

申请号：US12403881

申请日：2009-03-13

申请人： Syotaro Ono ,  Wataru Saito ,  Nana Hatano ,  Masaru Izumisawa ,  Yasuto Sumi ,  Hiroshi Ohta ,  Wataru Sekine ,  Miho Watanabe

发明人： Syotaro Ono ,  Wataru Saito ,  Nana Hatano ,  Masaru Izumisawa ,  Yasuto Sumi ,  Hiroshi Ohta ,  Wataru Sekine ,  Miho Watanabe

IPC分类号： H01L27/088

CPC分类号： H01L29/66712 ,  H01L21/266 ,  H01L29/0615 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/7395 ,  H01L29/7811

摘要： A semiconductor device includes a super junction region that has a first-conductivity-type first semiconductor pillar region and a second-conductivity-type second semiconductor pillar region alternately provided on the semiconductor substrate. The first semiconductor pillar region and the second semiconductor pillar region in a termination region have a lamination form resulting from alternate lamination of the first semiconductor pillar region and the second semiconductor pillar region on the top surface of the semiconductor substrate. The first semiconductor pillar region and/or the second semiconductor pillar region at a corner part of the termination region exhibit an impurity concentration distribution such that a plurality of impurity concentration peaks appear periodically. The first semiconductor pillar region and/or the second semiconductor pillar region at a corner part of the termination region have an impurity amount such that it becomes smaller as being closer to the circumference of the corner part.

摘要翻译： 半导体器件包括具有交替设置在半导体衬底上的第一导电型第一半导体柱区域和第二导电型第二半导体柱区域的超结区域。 终端区域中的第一半导体柱区域和第二半导体柱区域具有由半导体衬底的顶表面上的第一半导体柱区域和第二半导体柱区域的交替层叠形成的叠层形式。 终端区域的角部处的第一半导体柱区域和/或第二半导体柱区域显示杂质浓度分布，使得多个杂质浓度峰值周期性出现。 终端区域的角部处的第一半导体柱区域和/或第二半导体柱区域具有使得随着角部更靠近圆周而变小的杂质量。

公开(公告)号：US20100187604A1

公开(公告)日：2010-07-29

申请号：US12692527

申请日：2010-01-22

申请人： SYOTARO ONO ,  Wataru Saito ,  Nana Hatano ,  Hiroshi Ohta ,  Miho Watanabe

发明人： SYOTARO ONO ,  Wataru Saito ,  Nana Hatano ,  Hiroshi Ohta ,  Miho Watanabe

IPC分类号： H01L29/78

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/66712 ,  H01L29/7397

摘要： A semiconductor device includes a semiconductor substrate of a first conductivity type, a first semiconductor region of the first conductivity type on the semiconductor substrate, and a plurality of second semiconductor regions of a second conductivity type disposed separately in the first semiconductor region. A difference between a charge quantity expressed by an integral value of a net activated doping concentration in the second semiconductor regions in the surface direction of the semiconductor substrate and a charge quantity expressed by an integral value of a net activated doping concentration in the first semiconductor region in the surface direction of the semiconductor substrate is always a positive quantity and becomes larger from the depth of the first junction plane to a depth of a second junction plane on an opposite side from the first junction plane.

摘要翻译： 半导体器件包括第一导电类型的半导体衬底，半导体衬底上的第一导电类型的第一半导体区域和分开设置在第一半导体区域中的多个第二导电类型的第二半导体区域。 由半导体衬底的表面方向上的第二半导体区域中的净活化掺杂浓度的积分值表示的电荷量与由第一半导体区域中的净活化掺杂浓度的积分值表示的电荷量之间的差异 在半导体基板的表面方向总是为正量，并且从第一接合面的深度到与第一接合面相反的一侧的第二接合面的深度变得更大。

公开(公告)号：US07737469B2

公开(公告)日：2010-06-15

申请号：US11748869

申请日：2007-05-15

申请人： Wataru Saito ,  Syotaro Ono ,  Masakatsu Takashita ,  Yasuto Sumi ,  Masaru Izumisawa ,  Hiroshi Ohta ,  Wataru Sekine

发明人： Wataru Saito ,  Syotaro Ono ,  Masakatsu Takashita ,  Yasuto Sumi ,  Masaru Izumisawa ,  Hiroshi Ohta ,  Wataru Sekine

IPC分类号： H01L29/74

CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/402 ,  H01L29/404 ,  H01L29/41741 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7722 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/8611

摘要： A semiconductor device includes: a semiconductor layer of a first conductivity type; a first semiconductor pillar region of the first conductivity type provided on a major surface of the semiconductor layer; a second semiconductor pillar region of a second conductivity type provided adjacent to the first semiconductor pillar region on the major surface of the semiconductor layer, the second semiconductor pillar region forming a periodic arrangement structure substantially parallel to the major surface of the semiconductor layer together with the first semiconductor pillar region; a first main electrode; a first semiconductor region of the second conductivity type; a second semiconductor region of the first conductivity type; a second main electrode; a control electrode; and a high-resistance semiconductor layer provided on the semiconductor layer in an edge termination section surrounding the first semiconductor pillar region and the second semiconductor pillar region. The high-resistance semiconductor layer has a lower dopant concentration than the first semiconductor pillar region. A boundary region is provided between a device central region and the edge termination section. The first semiconductor pillar region and the second semiconductor pillar region adjacent to the high-resistance semiconductor layer in the boundary region have a depth decreasing stepwise toward the edge termination section.

摘要翻译： 半导体器件包括：第一导电类型的半导体层; 设置在半导体层的主表面上的第一导电类型的第一半导体柱区域; 第二导电类型的第二半导体柱区域，与半导体层的主表面上的第一半导体柱区域相邻设置，第二半导体柱区域形成基本上平行于半导体层的主表面的周期性排列结构以及 第一半导体柱区域; 第一主电极; 第二导电类型的第一半导体区域; 第一导电类型的第二半导体区域; 第二主电极; 控制电极; 以及设置在包围第一半导体柱区域和第二半导体柱区域的边缘终端部分的半导体层上的高电阻半导体层。 高电阻半导体层的掺杂浓度低于第一半导体柱区域。 边界区域设置在设备中心区域和边缘终端部分之间。 边界区域中与高电阻半导体层相邻的第一半导体柱区域和第二半导体柱区域具有沿着边缘终止部分逐步减小的深度。

公开(公告)号：US07651817B2

公开(公告)日：2010-01-26

申请号：US11547364

申请日：2005-03-25

申请人： Naohiro Sonobe ,  Hiroshi Ohta

发明人： Naohiro Sonobe ,  Hiroshi Ohta

IPC分类号： H01M4/58 ,  C01D3/00

CPC分类号： H01M10/0525 ,  C01B32/05 ,  H01M4/133 ,  H01M4/587 ,  Y02T10/7011

摘要： A process for producing a spherical carbon material, comprising: subjecting a spherical vinyl resin to an oxidation treatment in an oxidizing gas atmosphere to obtain a spherical carbon precursor, and carbonizing the spherical carbon precursor at 1000-2000° C. in a non-oxidizing gas atmosphere. The thus-obtained spherical carbon material exhibits excellent performances, including high output performance and durability, when used, e.g., as a negative electrode material for non-aqueous electrolyte secondary batteries.

摘要翻译： 一种球形碳材料的制造方法，其特征在于，包括：使球状乙烯基树脂在氧化性气体气氛中进行氧化处理，得到球形碳前体，并将所述球形碳前体在1000-2000℃下以非氧化性 气体气氛。 由此获得的球形碳材料在用作非水电解质二次电池的负极材料时表现出优异的性能，包括高输出性能和耐久性。