摘要:
In a head up display apparatus for an automotive vehicle including a projector unit disposed at the ceiling of the automotive vehicle to project display images and a half-mirror reflector unit for reflecting the projected display images to the driver, the height of the half-mirror reflector unit and the angular position of the projector unit are automatically adjusted according to vehicle speed, so that virtual display images can be appropriately seen by the driver ahead of the half-mirror reflector unit along the driver's eye direction variable according to vehicle speed, by use of a relatively small half-mirror reflector unit.
摘要:
This substrate processing apparatus supplies wafers W accommodated in a closed processing container 10 with ozone gas and steam for processing the wafers W. The apparatus includes an ozone-gas generator 40 for supplying the ozone gas into the processing container 10, a steam generator 30 for supplying the steam into the processing container 10 and a steam nozzle 35 arranged in the processing container 10 and connected to the steam generator 30. The steam nozzle 35 is equipped with a nozzle body 35a having a plurality of steam ejecting orifices 35f formed at appropriate intervals and a heater 35h for preventing dewdrops of the steam from being produced in the nozzle body 35a. Consequently, it is possible to prevent the formation of dewdrops of solvent steam, which may produce origins of particles in the closed processing container, unevenness in cleaning (etching), etc., and also possible to improve the processing efficiency.
摘要:
There is provided a conductive curable resin composition comprising (A) a curable resin composition comprising an elastomer with a Mooney viscosity (ML1+4 (100° C.)) of 25 or greater at 2-80 wt % and (B) a carbon material, with a weight ratio of component (A) to component (B) of 70-5:30-95. The curable resin composition of component (A) preferably comprises (A1) an elastomer at 80-2 wt %, (A2) a radical reactive resin at 20-98 wt % and (A3) an organic peroxide at 0.2-10 parts by weight to 100 parts by weight of (A1+A2). Also provided are a process for production of a conductive cured resin by shaping and curing of the conductive curable resin composition, and a fuel cell separator, an assembly for a cell, an electrode or a heat releasing plate, obtained thereby.
摘要:
A fuel cell separator having a surface layer on one side or both sides thereof. The surface layer includes at least two layers, wherein the surface layer includes a low-elastic modulus layer (1) having a bending elastic modulus of 1.0×10 1 -6.0×10 3 MPa, and a bending strain of 1% or more; and a high-elastic modulus layer (2) having a bending elastic modulus exceeding 6.0×10 3 MPa, as at least one layer constituting the surface layer, other than the low-elastic modulus layer (1).
摘要:
Water vapor is mixed to O3 gas generated by an ozone generator of discharge type. The mixed fluid is cooled by a cooler, thereby impurities such as metals and nitrogen oxides contained in the O3 gas dissolve into condensed water. Subsequently, a gas-liquid separator separates the O3 gas from the condensed water. Water vapor is mixed with the O3 gas again. The mixed fluid passes through a metal trap composed of a container containing plural silicon chips as a metal adsorbent, thereby to remove the remaining metals therefrom.
摘要:
A substrate processing method which removes an ArF resist film from a wafer having the ArF resist film. As an ultraviolet irradiation process is performed on the ArF resist film, and then an ozone gas and water vapor are fed to the ArF resist film, the ArF resist film is altered in a water-soluble state. Thereafter, the ArF resist film is removed from the substrate by feeding pure water to the ArF resist film altered into the water-soluble state.
摘要:
A common solvent vapor supply source 41 and a common processing gas supply source 42 supply ozone gas and steam to a plurality of processing vessels 30A, 30B. Pressures in the processing vessels are regulated by adjusting the openings of the valuable throttle valves 50A, 50B, which are placed in exhaust lines 80A, 80B, respectively.
摘要:
A substrate processing method for removing a resist film from a substrate having the resist film formed thereon comprises maintaining the inner region of the chamber at a prescribed temperature by putting a substrate in a chamber, denaturing the resist film by supplying ozone and a water vapor in such a manner that ozone is supplied into the chamber while a water vapor is supplied into the chamber at a prescribed flow rate, the amount of ozone relative to the amount of the water vapor being adjusted such that the dew formation within the chamber is prevented, and processing the substrate with a prescribed liquid material so as to remove the denatured resist film from the substrate.
摘要:
This substrate processing apparatus supplies wafers W accommodated in a closed processing container 10 with ozone gas and steam for processing the wafers W. The apparatus includes an ozone-gas generator 40 for supplying the ozone gas into the processing container 10, a steam generator 30 for supplying the steam into the processing container 10 and a steam nozzle 35 arranged in the processing container 10 and connected to the steam generator 30. The steam nozzle 35 is equipped with a nozzle body 35a having a plurality of steam ejecting orifices 35f formed at appropriate intervals and a heater 35h for preventing dewdrops of the steam from being produced in the nozzle body 35a. Consequently, it is possible to prevent the formation of dewdrops of solvent steam, which may produce origins of particles in the closed processing container, unevenness in cleaning (etching), etc., and also possible to improve the processing efficiency.
摘要:
Resists can be removed while metal contamination of wafers, etc. and generation of particles, and growth of oxide films are suppressed. An ozone gas feed system 40 for feeding ozone gas 2 into a processing vessel 10 holding wafers W, and a steam feed means 30 for feeding steam 1 into the processing vessel 10 are provided. An on-off valve 49 inserted in the ozone gas feed pipe 42, an on-off valve 36 inserted in the steam feed pipe 34 and a switch 48 and an on-off valve 49 of ozone gas generator 41 are connected to CPU 100 which is control means and are controlled by the CPU 100. Ozone gas 2 is fed into the processing vessel 10 to pressurize the atmosphere surrounding the wafers W, and then steam 1 is fed into the processing vessel 10 while ozone gas 2 is fed into the processing vessel 10, whereby a resist of the wafers W can be removed with the steam 1 and the ozone 2 while metal corrosion, etc. can be prevented.