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公开(公告)号：US09102519B2
公开(公告)日：2015-08-11
申请号：US13804934
申请日：2013-03-14
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe , Carsten Ahrens , Stefan Barzen , Wolfgang Friza
CPC classification number: B81B3/0072 , B81B3/001 , B81B3/0027 , B81B2201/0257 , B81B2203/0127 , B81B2203/0315 , B81C1/00182 , B81C1/00404 , B81C1/00984 , B81C2201/017 , B81C2201/115
Abstract: In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a sacrificial layer over a first surface of a workpiece having the first surface and an opposite second surface. A membrane is formed over the sacrificial layer. A through hole is etched through the workpiece from the second surface to expose a surface of the sacrificial layer. At least a portion of the sacrificial layer is removed from the second surface to form a cavity under the membrane. The cavity is aligned with the membrane.
Abstract translation: 根据本发明的实施例，形成半导体器件的方法包括在具有第一表面和相对的第二表面的工件的第一表面上形成牺牲层。 在牺牲层上形成膜。 从第二表面通过工件蚀刻通孔以暴露牺牲层的表面。 牺牲层的至少一部分从第二表面移除以在膜下形成空腔。 空腔与膜对准。
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公开(公告)号：US20210341433A1
公开(公告)日：2021-11-04
申请号：US17199211
申请日：2021-03-11
Applicant: Infineon Technologies AG
Inventor： Christoph Glacer , Stefan Barzen , Matthias Reinwald
Abstract: A thermal emitter includes a freestanding membrane supported by a substrate, wherein the freestanding membrane includes in a lateral extension a center section, a conductive intermediate section and a border section, wherein the conductive intermediate section laterally surrounds the center section and is electrically isolated from the center section, the conductive intermediate section including a conductive semiconductor material that is encapsulated in an insulating material, wherein the border section at least partially surrounds the intermediate section and is electrically isolated from the conductive intermediate section, and wherein a perforation is formed through the border section.
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公开(公告)号：US11115755B2
公开(公告)日：2021-09-07
申请号：US16779203
申请日：2020-01-31
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe , Stefan Barzen , Marc Fueldner
Abstract: For manufacturing a sound transducer structure, membrane support material is applied on a first main surface of a membrane carrier material and membrane material is applied in a sound transducing region and an edge region on a surface of the membrane support material. In addition, counter electrode support material is applied on a surface of the membrane material and recesses are formed in the sound transducing region of the membrane material. Counter electrode material is applied to the counter electrode support material and membrane carrier material and membrane support material are removed in the sound transducing region to the membrane material.
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公开(公告)号：US20200236485A1
公开(公告)日：2020-07-23
申请号：US16787577
申请日：2020-02-11
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe , Stefan Barzen
Abstract: A MEMS device includes a backplate electrode and a membrane disposed spaced apart from the backplate electrode. The membrane includes a displaceable portion and a fixed portion. The backplate electrode and the membrane are arranged such that an overlapping area of the fixed portion of the membrane with the backplate electrode is less than maximum overlapping.
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公开(公告)号：US20200216309A1
公开(公告)日：2020-07-09
申请号：US16821145
申请日：2020-03-17
Applicant: Infineon Technologies AG
Inventor： Marc Fueldner , Stefan Barzen , Alfons Dehe , Gunar Lorenz
Abstract: In accordance with one exemplary embodiment, a production method for a double-membrane MEMS component comprises the following steps: providing a layer arrangement on a carrier substrate, wherein the layer arrangement has a first and second membrane structure spaced apart from one another and a counterelectrode structure arranged therebetween, wherein a sacrificial material is arranged in an intermediate region between the counterelectrode structure and the first and second membrane structures respectively spaced apart therefrom, and wherein the first membrane structure has an opening structure to the intermediate region with the sacrificial material and partly removing the sacrificial material from the intermediate region in order to obtain a mechanical connection structure comprising the sacrificial material between the first and second membrane structures, which mechanical connection structure is mechanically coupled between the first and second membrane structures and is mechanically decoupled from the counterelectrode structure.
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Patent Agency Ranking
公开(公告)号：US10567886B2
公开(公告)日：2020-02-18
申请号：US15839546
申请日：2017-12-12
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe , Stefan Barzen , Marc Fueldner
Abstract: For manufacturing a sound transducer structure, membrane support material is applied on a first main surface of a membrane carrier material and membrane material is applied in a sound transducing region and an edge region on a surface of the membrane support material. In addition, counter electrode support material is applied on a surface of the membrane material and recesses are formed in the sound transducing region of the membrane material. Counter electrode material is applied to the counter electrode support material and membrane carrier material and membrane support material are removed in the sound transducing region to the membrane material.
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47.发明申请公开(公告)号：US20190297441A1
公开(公告)日：2019-09-26
申请号：US16439016
申请日：2019-06-12
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe , Stefan Barzen , Wolfgang Friza , Wolfgang Klein
Abstract: In one embodiment, a method of manufacturing a semiconductor device includes oxidizing a substrate to form local oxide regions that extend above a top surface of the substrate. A membrane layer is formed over the local oxide regions and the top surface of the substrate. A portion of the substrate under the membrane layer is removed. The local oxide regions under the membrane layer are removed.
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公开(公告)号：US10405118B2
公开(公告)日：2019-09-03
申请号：US14611953
申请日：2015-02-02
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe , Stefan Barzen , Wolfgang Friza , Wolfgang Klein
Abstract: In one embodiment, a method of manufacturing a semiconductor device includes oxidizing a substrate to form local oxide regions that extend above a top surface of the substrate. A membrane layer is formed over the local oxide regions and the top surface of the substrate. A portion of the substrate under the membrane layer is removed. The local oxide regions under the membrane layer is removed.
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公开(公告)号：US20190174229A1
公开(公告)日：2019-06-06
申请号：US16268122
申请日：2019-02-05
Applicant: Infineon Technologies AG
Inventor： Stefan Barzen
Abstract: According to an embodiment, a microspeaker includes an acoustic micropump structure configured to pump at a first frequency above an upper audible frequency limit. The acoustic micropump structure is further configured to generate an acoustic signal having a second frequency by adjusting the pumping. Adjusting the pumping includes adjusting a direction of pumping for the acoustic micropump structure according to the second frequency. Adjusting the direction of pumping includes changing a direction of flow of an elastic medium through the acoustic micropump structure from a first direction to a second direction. The second frequency is below the upper audible frequency limit.
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公开(公告)号：US20170180900A1
公开(公告)日：2017-06-22
申请号：US15452058
申请日：2017-03-07
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe , Stefan Barzen
CPC classification number: H04R31/003 , B81B3/0021 , B81B3/0086 , B81B2201/0221 , B81B2201/0257 , B81B2203/0127 , B81B2203/04 , B81C1/00158 , B81C2201/013 , H04R1/08 , H04R19/005 , H04R31/006 , H04R2201/003
Abstract: A MEMS device includes a backplate electrode and a membrane disposed spaced apart from the backplate electrode. The membrane includes a displaceable portion and a fixed portion. The backplate electrode and the membrane are arranged such that an overlapping area of the fixed portion of the membrane with the backplate electrode is less than maximum overlapping.
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