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41.发明申请公开(公告)号：US20240427237A1
公开(公告)日：2024-12-26
申请号：US18823620
申请日：2024-09-03
Applicant: Inpria Corporation
Inventor： Kai Jiang , Stephen T. Meyers , Lauren B. McQuade , Jeremy T. Anderson , Brian J. Cardineau , Benjamin L. Clark , Dominick Smiddy , Margaret Wilson-Moses
Abstract: Precursor solutions for radiation patternable coatings are formed with an organic solvent and monoalkyl tin trialkoxides in which the water content of the solvent is adjusted to be within 10 percent of a selected value. Generally, the water content of the solvent is adjusted through water addition, although water removal can also be used. In some embodiments, the adjusted water content of the solvent can be from about 250 ppm by weight to about 10,000 ppm by weight. With the appropriate selection of ligands, the adjusted precursor solutions can be stable for at least about 42 days, and in some cases at least 8 months.
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42.发明授权公开(公告)号：US11868046B2
公开(公告)日：2024-01-09
申请号：US17689135
申请日：2022-03-08
Applicant: Inpria Corporation
Inventor： Kai Jiang , Stephen T. Meyers , Lauren B. McQuade , Jeremy T. Anderson , Brian J. Cardineau , Benjamin L Clark , Dominick Smiddy , Margaret Wilson-Moses
CPC classification number: G03F7/0043 , B05D1/005 , G03F7/168 , G03F7/20
Abstract: Precursor solutions for radiation patternable coatings are formed with an organic solvent and monoalkyl tin trialkoxides in which the water content of the solvent is adjusted to be within 10 percent of a selected value. Generally, the water content of the solvent is adjusted through water addition, although water removal can also be used. In some embodiments, the adjusted water content of the solvent can be from about 250 ppm by weight to about 10,000 ppm by weight. With the appropriate selection of ligands, the adjusted precursor solutions can be stable for at least about 42 days, and in some cases at least 8 months.
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公开(公告)号：US11754924B2
公开(公告)日：2023-09-12
申请号：US17858129
申请日：2022-07-06
Applicant: Inpria Corporation
Inventor： Stephen T. Meyers , Jeremy T. Anderson , Brian J. Cardineau , Joseph B. Edson , Kai Jiang , Douglas A. Keszler , Alan J. Telecky
IPC: G03F7/16 , G03F7/004 , G03F7/38 , C23C16/40 , C23C14/08 , C23C16/455 , G03F7/20 , G03F7/32 , G03F7/40
CPC classification number: G03F7/168 , C23C14/086 , C23C16/407 , C23C16/45523 , C23C16/45561 , G03F7/0042 , G03F7/0043 , G03F7/162 , G03F7/167 , G03F7/2004 , G03F7/325 , G03F7/38 , G03F7/40
Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.
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44.发明授权公开(公告)号：US11740559B2
公开(公告)日：2023-08-29
申请号：US17498437
申请日：2021-10-11
Applicant: Inpria Corporation
Inventor： Mollie Waller , Brian J. Cardineau , Kai Jiang , Alan J. Telecky , Stephen T. Meyers , Benjamin L. Clark
CPC classification number: G03F7/422 , G03F7/0042 , G03F7/162 , G03F7/168 , H01L21/0273 , H01L21/02087 , H01L21/67051
Abstract: Apparatuses and methods are described for removing edge bead on a wafer associated with a resist coating comprising a metal containing resist compositions. The methods can comprise applying a first bead edge rinse solution along a wafer edge following spin coating of the wafer with the metal based resist composition, wherein the edge bead solution comprises an organic solvent and an additive comprising a carboxylic acid, an inorganic fluorinated acid, a tetraalkylammonium compound, or a mixture thereof. Alternatively or additionally, the methods can comprise applying a protective composition to the wafer prior to performing an edge bead rinse. The protective composition can be a sacrificial material or an anti-adhesion material and can be applied only to the wafer edge or across the entire wafer in the case of the protective composition. Corresponding apparatuses for processing the wafers using these methods are presented.
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公开(公告)号：US20230100995A1
公开(公告)日：2023-03-30
申请号：US17950685
申请日：2022-09-22
Applicant: Inpria Corporation , Tokyo Electron Limited
Inventor： Brian J. Cardineau , Peter de Schepper
Abstract: Patterning of organometallic radiation sensitive compositions is facilitated using a gaseous form of a contrast enhancing agent, which can include a carboxylic acid, an amide, a sulfonic acid, an alcohol, a diol, a silyl halide, a germanium halide, a tin halide, an amine, a thiol, or a mixture thereof, in which the mixture can be of the same class or different class of compounds. Contact with the contrast enhancing reactive compound is provided after irradiation of the organometallic composition to form a latent image. The contrast enhancing agent can be delivered before or after physical pattern development, and processing with the contrast enhancing agent can involve removal in a thermal process of some or substantially all of the non-irradiated organometallic composition. The contrast enhancing agent can be used in a dry thermal development step. If the contrast enhancing agent is used after a distinct development step, use of the contrast enhancing agent can involve improvement of the pattern quality. Apparatuses for performing processing with contrast enhancing agents are described.
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Patent Agency Ranking
公开(公告)号：US20220411446A1
公开(公告)日：2022-12-29
申请号：US17682586
申请日：2022-02-28
Applicant: Inpria Corporation
Inventor： Robert E. Jilek , Brian J. Cardineau , Kierra Huihui-Gist , Stephen T. Meyers
Abstract: Organotin compounds are presented that are represented by the formula RSnL3, wherein R is a deuterated hydrocarbyl group and L is a hydrolysable ligand. Two different synthesis techniques are described for synthesizing these compositions. A first method involves reacting a primary halide hydrocarbyl compound (R—X, where X is a halide atom) with an organometallic composition comprising SnL3 moieties associated with metal cations M, where M is an alkali metal, alkaline earth metal, and/or pseudo-alkaline earth metal (Zn, Cd, or Hg), and L is either an amide ligand resulting in an alkali metal tin triamide compound or an acetylide ligand resulting in an alkali metal tin triacetylide, to form correspondingly a monohydrocarbyl tin triamide (RSn(NR′2)3) or a monohydrocarbyl tin triacetylide (RSn(C≡CRs)3). An alternative approach involves reacting a Grignard reagent RMgX with SnL4 in a solution comprising an organic solvent to form a monoorgano tin tralkylamide, a monoorgano tin trialkoxide, monoorgano tin tri acetylide or monoorgano tin tricarboxylate. The compositions are useful for radiation patterning, especially with EUV radiation.
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公开(公告)号：US20220334488A1
公开(公告)日：2022-10-20
申请号：US17858172
申请日：2022-07-06
Applicant: Inpria Corporation
Inventor： Stephen T. Meyers , Jeremy T. Anderson , Brian J. Cardineau , Joseph B. Edson , Kai Jiang , Douglas A. Keszler , Alan J. Telecky
IPC: G03F7/16 , G03F7/004 , G03F7/20 , C23C14/08 , G03F7/38 , C23C16/455 , G03F7/40 , G03F7/32 , C23C16/40
Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.
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公开(公告)号：US20220324886A1
公开(公告)日：2022-10-13
申请号：US17840844
申请日：2022-06-15
Applicant: Inpria Corporation
Inventor： Brian J. Cardineau , William Earley , Stephen T. Meyers , Kai Jiang , Jeremy T. Anderson
Abstract: Patterning compositions are described based on organo tin dodecamers with hydrocarbyl ligands, oxo ligands, hydroxo ligands and carboxylato ligands. Alternative dodecamer embodiments have organo tin ligands in place of hydrocarbyl ligands. The organo tin ligands can be incorporated into the dodecamers from a monomer with the structure (RCC)3SnQ, where R is a hydrocarbyl group and Q is a alkyl tin moiety with a carbon bonded to the Sn atom of the monomer and with a Sn bonded as a replacement of a quaternary carbon atom with bonds to 4 carbon atoms. Some or all of the carboxylato and hydroxyl ligands can be replaced with fluoride ions. Good EUV patterning results are obtained with the dodecamer based patterning compositions.
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49.发明申请公开(公告)号：US20220291582A1
公开(公告)日：2022-09-15
申请号：US17705795
申请日：2022-03-28
Applicant: Inpria Corporation
Inventor： Stephen T. Meyers , Jeremy T. Anderson , Joseph B. Edson , Kai Jiang , Douglas A. Keszler , Michael K. Kocsis , Alan J. Telecky , Brian J. Cardineau
Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.
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50.发明申请公开(公告)号：US20220028685A1
公开(公告)日：2022-01-27
申请号：US17498437
申请日：2021-10-11
Applicant: Inpria Corporation
Inventor： Mollie Waller , Brian J. Cardineau , Kai Jiang , Alan J. Telecky , Stephen T. Meyers , Benjamin L. Clark
Abstract: Apparatuses and methods are described for removing edge bead on a wafer associated with a resist coating comprising a metal containing resist compositions. The methods can comprise applying a first bead edge rinse solution along a wafer edge following spin coating of the wafer with the metal based resist composition, wherein the edge bead solution comprises an organic solvent and an additive comprising a carboxylic acid, an inorganic fluorinated acid, a tetraalkylammonium compound, or a mixture thereof. Alternatively or additionally, the methods can comprise applying a protective composition to the wafer prior to performing an edge bead rinse. The protective composition can be a sacrificial material or an anti-adhesion material and can be applied only to the wafer edge or across the entire wafer in the case of the protective composition. Corresponding apparatuses for processing the wafers using these methods are presented.
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