公开(公告)号：US07166483B2

公开(公告)日：2007-01-23

申请号：US10870347

申请日：2004-06-17

Applicant: Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

Inventor： Yu-Chuan Liu ,  Chia-Ming Lee ,  I-Ling Chen ,  Jen-Inn Chyi

IPC: H01L21/00

CPC classification number: H01L33/38 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/05099

Abstract: A light-emitting device comprises a multi-layer structure including one or more active layer configured to irradiate light in response to the application of an electric signal, a transparent passivation layer laid over an outmost surface of the multi-layer stack, a reflector layer laid over the passivation layer, and a plurality of electrode pads coupled with the multi-layer structure. In a manufacture process of the light-emitting device, the reflector layer and the passivation layer are patterned to form at least one opening exposing an area of the multi-layer structure. One electrode pad is formed through the opening of the reflector layer and the passivation layer to connect with the multi-layer structure.

Abstract translation: 发光装置包括多层结构，其包括响应于电信号的施加而被配置为照射光的一个或多个有源层，布置在多层堆叠的最外表面上的透明钝化层，反射层 铺设在钝化层上，以及与多层结构耦合的多个电极焊盘。 在发光器件的制造工艺中，对反射层和钝化层进行构图以形成暴露多层结构区域的至少一个开口。 一个电极焊盘通过反射层的开口和钝化层形成，以与多层结构连接。

公开(公告)号：US06720570B2

公开(公告)日：2004-04-13

申请号：US10123287

申请日：2002-04-17

Applicant: Chia-Ming Lee ,  Jen-Inn Chyi

Inventor： Chia-Ming Lee ,  Jen-Inn Chyi

IPC: H01L2906

CPC classification number: H01L33/025 ,  H01L33/0016 ,  H01L33/02 ,  H01L33/14

Abstract: According to a preferred embodiment of the present invention, there is provided a novel and optimal semiconductor light emitting device comprising a substrate, an n layer disposed co-extensively on the substrate, an n++ layer disposed non-extensively and flush on one side of the n layer. Furthermore, a p+ layer is disposed co-extensively on the n++ layer of the LED according to the invention, with a p layer further disposed co-extensively on the p+ layer. A p cladding layer is disposed co-extensively on the p layer. A multiple quantum well (MQW) layer is disposed co-extensively on the p cladding layer, and an n cladding layer is further disposed co-extensively on the MQW layer. A second n layer is disposed co-extensively on the n cladding layer. An n+ layer is disposed co-extensively on the second n layer of the LED according to the invention. After partially etching the device, an n electrode is formed opposite n++ layer non-extensively on the surface of n layer, and a second n electrode is formed non-extensively (without etching) upon the n+ layer.

Abstract translation: 根据本发明的优选实施例，提供了一种新颖且最佳的半导体发光器件，其包括基底，共同设置在基底上的n层，n + +层，​​其非常广泛地并且在 n层。 此外，根据本发明，p +层共同设置在LED的n ++层上，其中p层进一步同时布置在p +层上。 p包层共同设置在p层上。 多量子阱（MQW）层共同设置在p包覆层上，并且n包覆层进一步同时布置在MQW层上。 第n层被共同设置在n包层上。 根据本发明，n + +层共同地布置在LED的第二n层上。 在部分蚀刻该器件之后，在n层的表面上非广泛地形成n电极，n +电极在n +层上非广泛地（无蚀刻）形成。

公开(公告)号：US20120281949A1

公开(公告)日：2012-11-08

申请号：US13344657

申请日：2012-01-06

Applicant: Hung-Chih Lu ,  Jen-Inn Chyi

Inventor： Hung-Chih Lu ,  Jen-Inn Chyi

IPC: G02B6/28

CPC classification number: G02B6/29353

Abstract: A Mach-Zehnder wavelength division multiplexer (WDM) is provided. The WDM has a short length with flat passband and low crosstalk. Since passband is flattened, crosstalk is reduced and length of the WDM is shortened, the WDN can be used for optical communication and optical interconnection in a single chip.

Abstract translation: 提供了一种马赫曾德尔波分多路复用器（WDM）。 WDM具有短通道，通带平坦，串扰低。 由于通带扁平化，串扰减少，WDM长度缩短，WDN可用于单芯片中的光通信和光互连。

公开(公告)号：US20120189249A1

公开(公告)日：2012-07-26

申请号：US13106072

申请日：2011-05-12

Applicant: Hung-Chih Lu ,  Jen-Inn Chyi

Inventor： Hung-Chih Lu ,  Jen-Inn Chyi

IPC: G02B6/34

CPC classification number: G02B6/29353

Abstract: A single-stage 1×5 grating-assisted wavelength division multiplexer is provided. A grating-assisted asymmetric Mach-Zehnder interferometer, a plurality of grating-assisted cross-state directional couplers and a plurality of novel side-band eliminators are combined to form the multiplexer. Only general gratings are required, not Bragg grating, for 5-channel wavelength division multiplexing in a single stage. A nearly ideal square-like band-pass filtering passband is obtained. The present disclosure can be used as a core device in IC-to-IC optical interconnects for multiplexing and demultiplexing of an optical transceiver. The present disclosure has a small size and good performance.

Abstract translation: 提供单级1×5光栅辅助波分复用器。 组合光栅辅助非对称马赫 - 策德尔干涉仪，多个光栅辅助交叉状态定向耦合器和多个新型侧带消除器以形成多路复用器。 只需要一般光栅，而不是布拉格光栅，用于单级5通道波分复用。 获得几乎理想的方形带通滤波通带。 本公开可以用作用于复用和解复用光收发器的IC至IC光互连中的核心设备。 本公开具有小尺寸和良好的性能。

公开(公告)号：US20100273331A1

公开(公告)日：2010-10-28

申请号：US12831265

申请日：2010-07-07

Applicant: Chia-Hua Chan ,  Jen-Inn Chyi ,  Chang-Chi Pan ,  Chii-Chang Chen

Inventor： Chia-Hua Chan ,  Jen-Inn Chyi ,  Chang-Chi Pan ,  Chii-Chang Chen

IPC: H01L21/302

CPC classification number: H01L33/22 ,  H01L33/0062

Abstract: A method of fabricating a nano/micro structure comprising the following steps is provided. First, a film is provided and then a mixed material comprising a plurality of ball-shape particles and a filler among the ball-shape particles is formed on the film. Next, the ball-shape particles are removed by the etching process, the solvent extraction process or the like, such that a plurality of concaves is formed on the surface of the filler, which serves as a nano/micro structure of the film.

Abstract translation: 提供一种制造纳米/微结构的方法，包括以下步骤。 首先，提供膜，然后在膜上形成包含多个球形颗粒和填充剂的混合材料。 接下来，通过蚀刻工艺，溶剂萃取工艺等去除球形颗粒，使得在作为膜的纳米/微结构的填料的表面上形成多个凹部。

公开(公告)号：US07799593B2

公开(公告)日：2010-09-21

申请号：US12538427

申请日：2009-08-10

Applicant: Chia-Ming Lee ,  Hung-Cheng Lin ,  Jen-Inn Chyi

Inventor： Chia-Ming Lee ,  Hung-Cheng Lin ,  Jen-Inn Chyi

IPC: H01L21/00

CPC classification number: H01L33/12 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02647 ,  H01L21/02658 ,  H01L33/22

Abstract: The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer. Next, the substrate is etched to form a plurality of concave zones and a plurality of convex zones with the chemical reaction layer overhead. Next, the chemical reaction layer is removed to form an irregular geometry of the concave zones and convex zones on the surface of the substrate. Then, a semiconductor light emitting structure is epitaxially formed on the surface of the substrate. Thereby, the present invention can achieve a light emitting diode structure having improved internal and external quantum efficiencies.

Abstract translation: 本发明公开了一种发光二极管结构及其制造方法。 在本发明中，将基板放置在溶液中以形成化学反应层。 接下来，蚀刻基板以形成具有化学反应层顶部的多个凹区域和多个凸区域。 接下来，去除化学反应层，以形成衬底表面上的凹区和凸区的不规则几何形状。 然后，在衬底的表面上外延形成半导体发光结构。 因此，本发明可以实现具有改善的内部和外部量子效率的发光二极管结构。

公开(公告)号：US07713769B2

公开(公告)日：2010-05-11

申请号：US11963558

申请日：2007-12-21

Applicant: Hung-Cheng Lin ,  Chia-Ming Lee ,  Jen-Inn Chyi

Inventor： Hung-Cheng Lin ,  Chia-Ming Lee ,  Jen-Inn Chyi

IPC: H01L21/46 ,  H01L21/461 ,  H01L21/8252 ,  H01L27/15

CPC classification number: H01L33/22

Abstract: The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer on carved regions; the carved region is selectively etched to form a plurality of concave zones and form a plurality of convex zones; a semiconductor layer structure is epitaxially grown on the element regions and carved regions of the substrate; the semiconductor layer structure on the element regions is fabricated into a LED element with a photolithographic process.

Abstract translation: 本发明公开了一种发光二极管结构及其制造方法。 在本发明中，将基板放置在溶液中以在雕刻区域上形成化学反应层; 选择性地蚀刻雕刻区域以形成多个凹陷区域并形成多个凸区域; 在衬底的元件区域和雕刻区域上外延生长半导体层结构; 通过光刻工艺将元件区域上的半导体层结构制成LED元件。

公开(公告)号：US07705361B2

公开(公告)日：2010-04-27

申请号：US11808271

申请日：2007-06-07

Applicant: Sheng-Yu Wang ,  Jen-Inn Chyi ,  Shu-Han Cheng

Inventor： Sheng-Yu Wang ,  Jen-Inn Chyi ,  Shu-Han Cheng

IPC: H01L3/256

CPC classification number: H01L29/7371 ,  H01L29/201 ,  H01L29/205

Abstract: A heterojunction bipolar transistor (HBT) has a (In)(Al)GaAsSb/InGaAs base-collector structure. A discontinuous base-collector conduction band forms a built-in electric field to infuse electrons into a collector structure effectively, while a discontinuous base-collector valence band prevents holes from spreading into the collector structure at the same time. Thus, a current density is increased. In addition, the small offset voltage of the base-emitter and base-collector junctions reduce a power consumption.

Abstract translation: 异质结双极晶体管（HBT）具有（In）（Al）GaAsSb / InGaAs基极集电器结构。 不连续的基极集电极导带形成内置的电场，以有效地将电子注入集电极结构，而不连续的基极集电极价带同时防止空穴扩散到集电极结构。 因此，电流密度增加。 此外，基极 - 基极 - 集电极结的小偏移电压降低功耗。

公开(公告)号：US07674642B2

公开(公告)日：2010-03-09

申请号：US11984335

申请日：2007-11-16

Applicant: Jin-Wei Shi ,  Jinn-Kong Sheu ,  Mao-Jen Wu ,  Chun-Kai Wang ,  Cheng-Hiong Chen ,  Jen-Inn Chyi

Inventor： Jin-Wei Shi ,  Jinn-Kong Sheu ,  Mao-Jen Wu ,  Chun-Kai Wang ,  Cheng-Hiong Chen ,  Jen-Inn Chyi

IPC: H01L21/00

CPC classification number: H01L27/153 ,  H01L33/025 ,  H01L33/32

Abstract: Green light emitting diodes (LED) of gallium arsenide (GaAs) are series-connected. The series connection has a small transmission attenuation and a wide bandwidth. The GaAs LED has a big forward bias and so neither extra driving current nor complex resonant-cavity epitaxy layer is needed. Hence, the present invention has a high velocity, a high efficiency and a high power while an uneven current distribution is avoided.

Abstract translation: 砷化镓（GaAs）的绿色发光二极管（LED）串联连接。 串联连接具有较小的传输衰减和宽带宽。 GaAs LED具有很大的正向偏压，因此不需要额外的驱动电流和复杂的谐振腔外延层。 因此，本发明具有高速度，高效率和高功率，同时避免了不均匀的电流分布。

公开(公告)号：US20090294756A1

公开(公告)日：2009-12-03

申请号：US12538400

申请日：2009-08-10

Applicant: Chia-Ming Lee ,  Hung-Cheng Lin ,  Jen-Inn Chyi

Inventor： Chia-Ming Lee ,  Hung-Cheng Lin ,  Jen-Inn Chyi

IPC: H01L29/06 ,  H01L33/00

CPC classification number: H01L33/12 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02647 ,  H01L21/02658 ,  H01L33/22

Abstract: The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer. Next, the substrate is etched to form a plurality of concave zones and a plurality of convex zones with the chemical reaction layer overhead. Next, the chemical reaction layer is removed to form an irregular geometry of the concave zones and convex zones on the surface of the substrate. Then, a semiconductor light emitting structure is epitaxially formed on the surface of the substrate. Thereby, the present invention can achieve a light emitting diode structure having improved internal and external quantum efficiencies.

Abstract translation: 本发明公开了一种发光二极管结构及其制造方法。 在本发明中，将基板放置在溶液中以形成化学反应层。 接下来，蚀刻基板以形成具有化学反应层顶部的多个凹区域和多个凸区域。 接下来，去除化学反应层，以形成衬底表面上的凹区和凸区的不规则几何形状。 然后，在衬底的表面上外延形成半导体发光结构。 因此，本发明可以实现具有改善的内部和外部量子效率的发光二极管结构。