公开(公告)号：US20050181593A1

公开(公告)日：2005-08-18

申请号：US10302073

申请日：2002-11-21

申请人： Jihperng Leu ,  Grant Kloster ,  David Gracias ,  Lee Rockford ,  Peter Moon ,  Chris Barns

发明人： Jihperng Leu ,  Grant Kloster ,  David Gracias ,  Lee Rockford ,  Peter Moon ,  Chris Barns

IPC分类号： H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/76835 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/312 ,  H01L21/3124 ,  H01L21/31695 ,  H01L21/76807 ,  H01L21/7682

摘要： An inter-layer dielectric structure and method of making such structure are disclosed. A composite dielectric layer, initially comprising a porous matrix and a porogen, is formed. Subsequent to other processing treatments, the porogen is decomposed and removed from at least a portion of the porous matrix, leaving voids defined by the porous matrix in areas previously occupied by the porogen. The resultant structure has a desirably low k value as a result of the porosity and materials comprising the porous matrix and porogen. The composite dielectric layer may be used in concert with other dielectric layers of varying porosity, dimensions, and material properties to provide varied mechanical and electrical performance profiles.

摘要翻译： 公开了一种层间电介质结构及其制造方法。 形成初始包含多孔基质和致孔剂的复合介电层。 在其它处理处理之后，致孔剂从多孔基体的至少一部分分解和除去，留下由多孔基质定义的空隙，其中先前由致孔剂占据的区域。 所得结构由于孔隙率和包含多孔基质和致孔剂的材料而具有期望的低k值。 复合介电层可以与具有不同孔隙率，尺寸和材料性质的其它电介质层一起使用，以提供不同的机械和电气性能轮廓。

公开(公告)号：US20050164489A1

公开(公告)日：2005-07-28

申请号：US11045447

申请日：2005-01-27

申请人： Grant Kloster ,  Jihperng Leu ,  Hyun-Mog Park

发明人： Grant Kloster ,  Jihperng Leu ,  Hyun-Mog Park

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L21/4763

CPC分类号： H01L23/5222 ,  H01L21/7682 ,  H01L2924/0002 ,  H01L2924/00

摘要： An embodiment of the present invention includes a method to form an air gap in a multi-layer structure. A dual damascene structure is formed on a substrate. The dual damascene structure has a metallization layer, a barrier layer, a sacrificial layer, and a hard mask layer. The sacrificial layer is made of a first sacrificial material having substantial thermal stability and decomposable by an electron beam. The sacrificial layer is removed by the electron beam to create the air gap between the barrier layer and the hard mask layer.

公开(公告)号：US06867125B2

公开(公告)日：2005-03-15

申请号：US10259047

申请日：2002-09-26

申请人： Grant Kloster ,  Jihperng Leu ,  Hyun-Mog Park

发明人： Grant Kloster ,  Jihperng Leu ,  Hyun-Mog Park

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L21/4763

CPC分类号： H01L23/5222 ,  H01L21/7682 ,  H01L2924/0002 ,  H01L2924/00

摘要： An embodiment of the present invention includes a method to form an air gap in a multi-layer structure. A dual damascene structure is formed on a substrate. The dual damascene structure has a metallization layer, a barrier layer, a sacrificial layer, and a hard mask layer. The sacrificial layer is made of a first sacrificial material having substantial thermal stability and decomposable by an electron beam. The sacrificial layer is removed by the electron beam to create the air gap between the barrier layer and the hard mask layer.

摘要翻译： 本发明的一个实施例包括一种在多层结构中形成气隙的方法。 在基板上形成双镶嵌结构。 双镶嵌结构具有金属化层，阻挡层，牺牲层和硬掩模层。 牺牲层由具有实质的热稳定性并可由电子束分解的第一牺牲材料制成。 通过电子束除去牺牲层以产生阻挡层和硬掩模层之间的气隙。

公开(公告)号：US06794755B2

公开(公告)日：2004-09-21

申请号：US10400128

申请日：2003-03-25

申请人： Jose A. Maiz ,  Xiaorong Morrow ,  Thomas Marieb ,  Carolyn Block ,  Jihperng Leu ,  Paul McGregor ,  Markus Kuhn ,  Mitchell C. Taylor

发明人： Jose A. Maiz ,  Xiaorong Morrow ,  Thomas Marieb ,  Carolyn Block ,  Jihperng Leu ,  Paul McGregor ,  Markus Kuhn ,  Mitchell C. Taylor

IPC分类号： H01L2348

CPC分类号： H01L21/76846 ,  H01L21/32051 ,  H01L21/76801 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76822 ,  H01L21/76825 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76886 ,  H01L21/76888 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Described is a method and apparatus for altering the top surface of a metal interconnect. In one embodiment of the invention, a metal interconnect and a barrier layer are formed into an interlayer dielectric (ILD) and the metal interconnect and the barrier layer are planarized to the top of the ILD. The top surfaces of the metal interconnect, the barrier layer, and the ILD are altered with a second metal to form an electromigration barrier. In one embodiment of the invention, the second metal is prevented from contaminating the electrical resistivity of the metal interconnect.

摘要翻译： 描述了用于改变金属互连的顶表面的方法和装置。 在本发明的一个实施例中，将金属互连和阻挡层形成为层间电介质（ILD），并将金属互连和阻挡层平面化到ILD的顶部。 金属互连，阻挡层和ILD的顶表面用第二金属改变以形成电迁移屏障。 在本发明的一个实施例中，防止了第二金属污染金属互连的电阻率。