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    Inkjet printhead and method of manufacturing the same
    43.
    发明授权
    Inkjet printhead and method of manufacturing the same 有权
    喷墨打印头及其制造方法

    公开(公告)号：US08277023B2

    公开(公告)日：2012-10-02

    申请号：US12575094

    申请日：2009-10-07

    Applicant: Myong-Jong Kwon ,  Sung-Joon Park ,  Jin-Wook Lee

    Inventor： Myong-Jong Kwon ,  Sung-Joon Park ,  Jin-Wook Lee

    IPC: B41J2/14 ,  B41J2/05

    CPC classification number: B41J2/14032 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/164 ,  Y10T29/49401

    Abstract: Disclosed are an inkjet printhead and a method of fabricating the same. The inkjet printhead can include a substrate; a chamber layer formed on the substrate and a nozzle layer formed on the chamber layer. The chamber layer defines one or more ink chambers in which ink to be ejected may be accommodated. The nozzle layer includes one or more nozzles through which the ink from the ink chambers are ejected. The nozzle layer may be formed of a cured product of a photosensitive dry film that includes an light absorption material.

    Abstract translation: 公开了一种喷墨打印头及其制造方法。 喷墨打印头可以包括基板; 形成在基板上的室层和形成在室层上的喷嘴层。 室层限定一个或多个墨室，其中可以容纳待排出的墨。 喷嘴层包括一个或多个喷嘴，通过该喷嘴喷射来自墨室的墨。 喷嘴层可以由包含光吸收材料的感光干膜的固化产物形成。

    Inkjet printhead and method of manufacturing the same
    45.
    发明授权
    Inkjet printhead and method of manufacturing the same 有权
    喷墨打印头及其制造方法

    公开(公告)号：US08104872B2

    公开(公告)日：2012-01-31

    申请号：US12468884

    申请日：2009-05-20

    Applicant: Myong-Jong Kwon ,  Sung-Joon Park ,  Jin-Wook Lee

    Inventor： Myong-Jong Kwon ,  Sung-Joon Park ,  Jin-Wook Lee

    IPC: B41J2/14 ,  B41J2/16

    CPC classification number: B41J2/1603 ,  B41J2/1631 ,  B41J2/1639

    Abstract: An inkjet printhead includes: a substrate in which an ink feed hole is formed; a chamber layer which is formed on the substrate by performing a photolithography process and which includes a first photosensitive resin; and a nozzle layer which is formed on the chamber layer by performing a photolithography process and which includes a second photosensitive resin. The first photosensitive resin and the second photosensitive resin are materials which are developed by different developing solutions, respectively. Additional layers and components may be incorporated into the inkjet printhead and may be formed on an upper surface of the substrate. The additional layers and components may include an insulating layer, one or more heaters, one or more electrodes, a passivation layer, a glue layer, and an anti-cavitation layer.

    Abstract translation: 喷墨打印头包括：形成有供墨孔的基板; 通过进行光刻工艺在基板上形成的包括第一感光性树脂的室层; 以及通过进行光刻工艺在腔室层上形成并包括第二感光树脂的喷嘴层。 第一感光性树脂和第二感光性树脂是分别通过不同的显影液显影的材料。 另外的层和组件可以结合到喷墨打印头中，并且可以形成在基板的上表面上。 附加层和部件可以包括绝缘层，一个或多个加热器，一个或多个电极，钝化层，胶层和抗空穴层。

    Nonvolatile semiconductor memory device for supporting high speed search in cache memory
    47.
    发明授权
    Nonvolatile semiconductor memory device for supporting high speed search in cache memory 有权
    用于在高速缓冲存储器中支持高速搜索的非易失性半导体存储器件

    公开(公告)号：US08010736B2

    公开(公告)日：2011-08-30

    申请号：US12029665

    申请日：2008-02-12

    Applicant: Chan-Ik Park ,  Jin-Wook Lee ,  Byoung-Kook Lee

    Inventor： Chan-Ik Park ,  Jin-Wook Lee ,  Byoung-Kook Lee

    IPC: G06F12/00

    CPC classification number: G06F12/0866 ,  G06F12/0246 ,  G06F2212/222 ,  G06F2212/7201 ,  G06F2212/7203

    Abstract: A method for reducing a memory map table search time when employing a semiconductor memory device as a temporary memory of large capacity storage device, and a semiconductor memory device therefore, are provided. A MAP RAM is prepared for storing map table data related to the nonvolatile memory area in the volatile memory area. At an initial power-up operation, it is determined whether a logical address is searched for from the map table data while the map table data existing in a map storage area of the nonvolatile memory area is loaded into the MAP RAM. A physical address corresponding to the logical address is provided as an output, when the logical address is searched for. Search time for a memory map table is reduced and read performance in a high speed map information search is increased.

    Abstract translation: 提供一种用于在采用半导体存储器件作为大容量存储器件的临时存储器时减少存储器映射表搜索时间的方法，以及半导体存储器件。 准备MAP RAM用于存储与易失性存储器区域中的非易失性存储器区域相关的映射表数据。 在初始加电操作中，确定存在于非易失存储器区域的映射存储区域中的映射表数据是否被加载到MAP RAM中时，从地图表数据中搜索逻辑地址。 当搜索逻辑地址时，提供与逻辑地址对应的物理地址作为输出。 降低了存储器映射表的搜索时间，并且增加了在高速地图信息搜索中的读取性能。

    METHOD FOR AUTOMATIC WLAN CONNECTION BETWEEN DIGITAL DEVICES AND DIGITAL DEVICE THEREFOR
    48.
    发明申请
    METHOD FOR AUTOMATIC WLAN CONNECTION BETWEEN DIGITAL DEVICES AND DIGITAL DEVICE THEREFOR 有权
    数字设备与数字设备之间的自动WLAN连接方法

    公开(公告)号：US20100325425A1

    公开(公告)日：2010-12-23

    申请号：US12797225

    申请日：2010-06-09

    Applicant: Woo-Jin Park ,  Jin-Hyoung Kim ,  Jin-Wook Lee ,  Je-Hyok Ryu ,  Hun Lim ,  Shin-Il Kang ,  Gene-Moo Lee

    Inventor： Woo-Jin Park ,  Jin-Hyoung Kim ,  Jin-Wook Lee ,  Je-Hyok Ryu ,  Hun Lim ,  Shin-Il Kang ,  Gene-Moo Lee

    IPC: H04L9/00

    CPC classification number: H04W12/04 ,  H04L9/0869 ,  H04L2209/80 ,  H04W84/18

    Abstract: A method and apparatus for performing an automatic wireless connection with a second digital device by a first digital device is provided. The method includes acquiring, by the first input device, random information used for the wireless connection; checking a status of a Wireless Local Area Network (WLAN); storing the checked status; setting the WLAN to an Ad-hoc mode; setting a Service Set Identifier (SSID) of the WLAN using the random information; setting a security key of the WLAN using the random information; and setting an Internet Protocol (IP) address of the WLAN using the random information.

    Abstract translation: 提供了一种通过第一数字设备执行与第二数字设备的自动无线连接的方法和装置。 该方法包括由第一输入设备获取用于无线连接的随机信息; 检查无线局域网（WLAN）的状态; 存储检查状态; 将WLAN设置为Ad-hoc模式; 使用随机信息设置WLAN的服务集标识符（SSID）; 使用随机信息设置WLAN的安全密钥; 以及使用随机信息设置WLAN的因特网协议（IP）地址。

    NAND flash memory device and method of programming same
    49.
    发明授权
    NAND flash memory device and method of programming same 有权
    NAND闪存器件和编程方法相同

    公开(公告)号：US07443728B2

    公开(公告)日：2008-10-28

    申请号：US11242013

    申请日：2005-10-04

    Applicant: Jin-Wook Lee ,  Pyung-Moon Zhang

    Inventor： Jin-Wook Lee ,  Pyung-Moon Zhang

    IPC: G11C16/24 ,  G11C16/10 ,  G11C16/06 ,  G11C7/02 ,  G11C8/12 ,  G11C7/12

    CPC classification number: G11C16/10 ,  G11C16/0483 ,  G11C16/24

    Abstract: Disclosed is a NAND flash memory device comprising a memory cell array connected to a page buffer via a plurality of bitlines. The page buffer stores input data to be programmed in the memory cell array. The memory cell array is programmed by establishing bitline voltages for the plurality of bitlines according to the input data and then applying a wordline voltage to the memory cell array. The bitline voltages are established by first precharging the bitlines to a power supply voltage and then selectively discharging the bitlines according to the input data. The bitlines are discharged sequentially, i.e., some of the bitlines are discharged before others.

    Abstract translation: 公开了一种NAND闪速存储器件，其包括通过多个位线连接到页缓冲器的存储单元阵列。 页面缓冲器将要编程的输入数据存储在存储单元阵列中。 通过根据输入数据建立多个位线的位线电压，然后将字线电压施加到存储单元阵列来编程存储单元阵列。 位线电压通过首先将位线预充电到电源电压，然后根据输入数据选择性地排放位线来建立。 位线依次放电，即某些位线在其他位线之前被放电。

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