Semiconductor laser device and method for fabricating the same
    41.
    发明授权
    Semiconductor laser device and method for fabricating the same 失效
    半导体激光器件及其制造方法

    公开(公告)号:US06834068B2

    公开(公告)日:2004-12-21

    申请号:US10180294

    申请日:2002-06-27

    申请人: Toshikazu Onishi

    发明人: Toshikazu Onishi

    IPC分类号: H01S500

    摘要: A semiconductor laser device according to the present invention has a semiconductor substrate having a first region and a second region adjacent to the first region, a first active layer formed on the first region and made of a compound semiconductor, a first clad layer formed on the first active layer and made of a compound semiconductor containing a first dopant, and a second active region formed on the second region and made of a compound semiconductor containing a second dopant having a diffusion coefficient with respect to the first active region which is higher than that of the first dopant.

    摘要翻译: 根据本发明的半导体激光器件具有半导体衬底,其具有第一区域和与第一区域相邻的第二区域,形成在第一区域上并由化合物半导体制成的第一有源层,形成在第一区域上的第一覆盖层 第一有源层,由含有第一掺杂剂的化合物半导体构成,第二有源区形成在第二区上,由含有相对于第一有源区扩散系数的第二掺杂剂的化合物半导体构成, 的第一掺杂剂。

    Semiconductor laser device and method for fabricating the same
    42.
    发明授权
    Semiconductor laser device and method for fabricating the same 失效
    半导体激光器件及其制造方法

    公开(公告)号:US06661824B2

    公开(公告)日:2003-12-09

    申请号:US09784016

    申请日:2001-02-16

    申请人: Toshikazu Onishi

    发明人: Toshikazu Onishi

    IPC分类号: H01S500

    摘要: A first semiconductor laminated structure including a first active layer for oscillating a first laser beam having a first wavelength band is provided on a front-side region of a substrate. A second semiconductor laminated structure including a second active layer for oscillating a second laser beam having a second wavelength band is provided on a rear-side region of the substrate. An emission direction of the first laser beam and an emission direction of the second laser beam are same.

    摘要翻译: 包括用于振荡具有第一波长带的第一激光束的第一有源层的第一半导体层叠结构设置在基板的正面区域上。 在基板的后侧区域设置有包括用于振荡具有第二波长带的第二激光束的第二有源层的第二半导体层叠结构。 第一激光束的发射方向和第二激光束的发射方向相同。

    Thermal transfer image recording sheet and method of producing same
    43.
    发明授权
    Thermal transfer image recording sheet and method of producing same 失效
    热转印图像记录纸及其制造方法

    公开(公告)号:US6019866A

    公开(公告)日:2000-02-01

    申请号:US985286

    申请日:1997-12-04

    摘要: A method of producing a thermal transfer image recording sheet is provided including the steps (a) bonding a surface of a substrate sheet to a plastic film through a layer of a polymeric binder having a glass transition temperature of 50.degree. C. or less to form a first laminate; (b) heat setting the first laminate under pressure at a temperature higher than the glass transition temperature of the polymeric binder layer to remove stress from the finished thermal transfer image recording sheet; and (c) forming a thermal transfer image-receiving layer on an exposed surface of the plastic film to produce the thermal transfer image recording sheet. A method of producing a thermal transfer image recording sheet is also provided including the steps (a) bonding a surface of a substrate sheet to a plastic film through a layer of a polymeric binder having a glass transition temperature of 50.degree. C. or less to form a first laminate; (b) forming a thermal transfer image-receiving layer on an exposed surface of the plastic film to form a thermal transfer image recording sheet; and (c) heat setting the thermal transfer image recording sheet under pressure at a temperature higher than the glass transition temperature of the polymeric binder layer to remove remaining stress from the finished thermal transfer image recording sheet.

    摘要翻译: 提供一种制备热转印图像记录纸的方法,包括以下步骤:(a)通过玻璃化转变温度为50℃以下的聚合物粘合剂层将基材的表面粘合到塑料膜上以形成 第一层压板; (b)在高于聚合物粘合剂层的玻璃化转变温度的温度下,在压力下使第一层压体热定型以消除最终热转印图像记录片材的应力; 和(c)在塑料膜的暴露表面上形成热转印图像接收层以产生热转印图像记录纸。 还提供了一种制备热转印图像记录纸的方法,包括以下步骤:(a)通过玻璃化转变温度为50℃以下的聚合物粘合剂层将基材的表面与塑料膜接合到 形成第一层压板; (b)在塑料膜的暴露表面上形成热转印图像接收层以形成热转印图像记录纸; 和(c)在高于聚合物粘合剂层的玻璃化转变温度的温度的压力下热定形热转印图像记录片材,以从完成的热转印图像记录片材去除剩余的应力。

    Heat-sensitive recording material
    44.
    发明授权
    Heat-sensitive recording material 失效
    热敏记录材料

    公开(公告)号:US5242884A

    公开(公告)日:1993-09-07

    申请号:US9399

    申请日:1993-01-27

    IPC分类号: B41M5/337

    CPC分类号: B41M5/3375

    摘要: A heat-sensitive recording material comprising a substrate and a heat-sensitive recording layer disposed on said substrate, said heat-sensitive recording layer containing a colorless or light-colored basic dye and a color developer capable of causing color development upon contact with said basic dye by application of heat, characterized in that said heat-sensitive recording layer contains (i) an antioxidant comprising at least a member selected from the group consisting of the compounds represented by the following structural formula (I) and the compounds represented by the following structural formula (II), (ii) an aromatic secondary amine compound and (iii) at least a basic dye having an absorption in the near infrared region with respect to an image provided as said basic dye. ##STR1##

    摘要翻译: 一种热敏记录材料,包括基材和设置在所述基材上的热敏记录层,所述热敏记录层含有无色或浅色碱性染料和能与所述碱性物质接触的颜色显影剂 染色,其特征在于,所述热敏记录层含有(i)抗氧化剂,其包含至少一种选自由以下结构式(I)表示的化合物和由以下结构式表示的化合物 结构式(II),(ii)芳族仲胺化合物和(iii)至少一种对于作为所述碱性染料提供的图像在近红外区域具有吸收的碱性染料。 (I)(II)

    Terahertz wave radiating element
    45.
    发明授权
    Terahertz wave radiating element 失效
    太赫兹波辐射元件

    公开(公告)号:US08304812B2

    公开(公告)日:2012-11-06

    申请号:US13051455

    申请日:2011-03-18

    IPC分类号: H01L29/778

    摘要: A terahertz wave radiating element includes: a first nitride semiconductor layer formed on a substrate; a second nitride semiconductor layer formed over the first nitride semiconductor layer, and having a wider bandgap than the first nitride semiconductor layer; and source, gate, and drain electrodes formed on the second nitride semiconductor layer. The source electrode is formed by a plurality of source electrode fingers that are arranged periodically, and the drain electrode is formed by a plurality of drain electrode fingers that are arranged periodically.

    摘要翻译: 太赫兹波辐射元件包括:形成在基板上的第一氮化物半导体层; 形成在所述第一氮化物半导体层之上并且具有比所述第一氮化物半导体层更宽的带隙的第二氮化物半导体层; 以及形成在第二氮化物半导体层上的源极,栅极和漏电极。 源电极由周期性地排列的多个源电极指形成,漏电极由周期性排列的多个漏电极指形成。