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公开(公告)号：US07147748B2
公开(公告)日：2006-12-12
申请号：US10779742
申请日：2004-02-18
申请人： Go Miya , Hiroyuki Kitsunai , Junichi Tanaka , Toshio Masuda , Hideyuki Yamamoto
发明人： Go Miya , Hiroyuki Kitsunai , Junichi Tanaka , Toshio Masuda , Hideyuki Yamamoto
CPC分类号： G01N21/73 , H01J37/32935 , H01J37/32963 , H01L21/67253 , H05H1/0037
摘要： A plasma processing method using a plasma processing apparatus having a process chamber in which a substrate is subjected to a plasma processing, a light-receiving part, a spectrometer unit, an arithmetic unit, a database, a determination unit for determining that an end point of seasoning is reached as a condition of the process chamber, and an apparatus controller. The method includes the steps of converting a multi-channel signal output from the spectrometer unit into a batch of output signals, finding differences between the output signals and output signals of a preceding batch, determining the average value of the differences in one batch, the difference between the maximum and the minimum of the differences in one batch and the standard deviation of the differences in one batch, and comparing the determined values with a preset threshold.
摘要翻译： 一种使用等离子体处理装置的等离子体处理方法，该等离子体处理装置具有其中对基板进行等离子体处理的处理室，受光部，光谱仪单元，运算单元，数据库，确定单元，用于确定终点 调味料作为处理室的条件，以及设备控制器。 该方法包括以下步骤：将从光谱仪单元输出的多通道信号转换为一批输出信号，发现前一批次的输出信号和输出信号之间的差异，确定一批中的差异的平均值， 一批中的差异的最大值和最小值之间的差异以及一批中的差异的标准偏差，并将确定的值与预设阈值进行比较。
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公开(公告)号：US20060191482A1
公开(公告)日：2006-08-31
申请号：US11074717
申请日：2005-03-09
申请人： Seiichiro Kanno , Junichi Tanaka , Go Miya , Tsunehiko Tsubone , Akitaka Makino , Toshio Masuda
发明人： Seiichiro Kanno , Junichi Tanaka , Go Miya , Tsunehiko Tsubone , Akitaka Makino , Toshio Masuda
IPC分类号： C23C16/00
CPC分类号： H01L21/32137 , H01J37/32935 , H01J37/3299 , H01J2237/2001 , H01L21/67069 , H01L21/67109
摘要： A wafer processing apparatus capable of obtaining a uniform CD distribution within a wafer is provided. The wafer processing apparatus comprises at least two separate circuits of temperature regulating means provided in a wafer stage, a plurality of cooling gas pressure regulating means for feeding cooling gas between the semiconductor wafer and the wafer stage, means for regulating heater input power, and a control computer. The control computer receives input of line width dimensions resulting from processes in an arbitrary plurality of temperature conditions obtained by changing at least one of the conditions of the temperature of the temperature regulating agent, the cooling gas pressure, and the input power of the heater. The line width dimensions are used to calculate, and control, at least one of the temperature of the temperature regulating agent, the cooling gas pressure, and the input power of the heater for obtaining an arbitrary etching line width dimension.
摘要翻译： 提供能够在晶片内获得均匀的CD分布的晶片处理装置。 晶片处理装置包括设置在晶片台中的温度调节装置的至少两个分离电路，用于在半导体晶片和晶片台之间供给冷却气体的多个冷却气体压力调节装置，用于调节加热器输入功率的装置和 控制电脑。 控制计算机接收由通过改变温度调节剂的温度，冷却气体压力和加热器的输入功率的至少一个条件而获得的任意多个温度条件下的处理产生的线宽尺寸的输入。 线宽尺寸用于计算和控制温度调节剂的温度，冷却气体压力和加热器的输入功率中的至少一个，以获得任意的蚀刻线宽度尺寸。
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公开(公告)号：US20070051470A1
公开(公告)日：2007-03-08
申请号：US11362024
申请日：2006-02-27
CPC分类号： H01J37/32935 , B08B7/0035
摘要： A plasma processing apparatus includes: a processing chamber; a state detector for detecting a state of plasma in the processing chamber; an input unit for inputting process result data of a specimen processed in the plasma processing chamber; and a controller including a prediction equation forming unit for forming a prediction equation of a process result in accordance with plasma state data detected with the state detector for the plasma process simulating a specimen existing state in the processing chamber in a specimen non-placed state and process result data of the specimen input with the input unit and processed by the plasma process in a specimen placed state, and storing the prediction equation, wherein the controller predicts the process result of a succeeding plasma process in accordance with plasma state data newly acquired via the state detector in the specimen non-placed state and the stored prediction equation.
摘要翻译： 一种等离子体处理装置，包括：处理室; 状态检测器，用于检测处理室中的等离子体的状态; 用于输入在所述等离子体处理室中处理的样本的处理结果数据的输入单元; 以及控制器，其包括预测方程式形成单元，用于根据用于等离子体处理的状态检测器检测的等离子体状态数据形成处理结果的预测方程，所述等离子体处理模拟在处理室中的样本未放置状态， 使用输入单元输入的样本的处理结果数据，并且在样本放置状态下通过等离子体处理进行处理，并存储预测方程，其中控制器根据根据新近获取的等离子体状态数据预测后续等离子体处理的处理结果 样品未放置状态下的状态检测器和存储的预测方程。
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公开(公告)号：US06747239B2
公开(公告)日：2004-06-08
申请号：US10437030
申请日：2003-05-14
IPC分类号： B23K1000
CPC分类号： H01L21/67253 , H01J37/32935
摘要： A plasma processing apparatus having a process chamber to process specimens; a status detecting unit for detecting the internal processing status of the process chamber and outputting a plurality of signals; and a signal converting unit for extracting an arbitrary number of signal processing filters from a signal filter database using a signal filter selector and creating an arbitrary number of device status signals. The signal converting unit creates fewer effective device status signals of a time series from the output signals.
摘要翻译： 一种等离子体处理装置，具有处理试样的处理室; 状态检测单元，用于检测处理室的内部处理状态并输出多个信号; 以及信号转换单元，用于使用信号滤波器选择器从信号滤波器数据库中提取任意数量的信号处理滤波器，并创建任意数量的装置状态信号。 信号转换单元从输出信号产生一个时间序列的有效装置状态信号。
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公开(公告)号：US06590179B2
公开(公告)日：2003-07-08
申请号：US09791732
申请日：2001-02-26
IPC分类号： B23K1000
CPC分类号： H01L21/67253 , H01J37/32935
摘要： A plasma processing apparatus having a process chamber to process specimens, a status detecting means for detecting the internal processing status of said process chamber and outputting a plurality of signals, and signal converting means for extracting an arbitrary number of signal processing filters from a signal filter database using a signal filter selecting means and creating an arbitrary number of device status signals. The signal converting means creates fewer effective device status signals of a time series from said output signals.
摘要翻译： 一种具有处理试样的处理室的等离子体处理装置，检测所述处理室的内部处理状态并输出多个信号的状态检测装置，以及从信号滤波器提取任意数量的信号处理滤波器的信号转换装置 数据库，使用信号滤波器选择装置并创建任意数量的装置状态信号。 信号转换装置从所述输出信号产生一个时间序列的有效装置状态信号。
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公开(公告)号：US20060151429A1
公开(公告)日：2006-07-13
申请号：US11032000
申请日：2005-01-11
CPC分类号： H01J37/32935
摘要： A plasma processing method utilizing a plasma processing apparatus comprising a control unit and a processing chamber for performing a plasma processing in which the processing chamber comprises a plasma status detecting unit for detecting the processing status in the processing chamber and outputting plural output signals. The method includes storing data related to past wafer processing results, plasma status detection data obtained during the past wafer processing, and a relational expression correlating the two data; computing a prediction of the processing result based on the relational expression and the detected data of the processing chamber status transmitted from the plasma status detecting unit, and evaluating the processing chamber status based on the computed prediction of the processing result.
摘要翻译： 一种利用等离子体处理装置的等离子体处理方法，包括控制单元和处理室，用于执行等离子体处理，其中处理室包括用于检测处理室中的处理状态并输出多个输出信号的等离子体状态检测单元。 该方法包括存储与过去晶片处理结果有关的数据，在过去的晶片处理期间获得的等离子体状态检测数据以及与两个数据相关的关系表达式; 基于从等离子体状态检测单元发送的处理室状态的关系表达和检测数据，计算处理结果的预测，以及基于所计算的处理结果的预测来评估处理室状态。
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公开(公告)号：US06899766B2
公开(公告)日：2005-05-31
申请号：US10781689
申请日：2004-02-20
申请人： Go Miya , Junichi Tanaka , Tsutomu Tetsuka , Hideyuki Yamamoto
发明人： Go Miya , Junichi Tanaka , Tsutomu Tetsuka , Hideyuki Yamamoto
CPC分类号： H01L21/67288 , C23C16/5096 , C23C16/52 , H01J37/32935
摘要： A method of diagnosing a semiconductor processing apparatus for imparting plasma treatment to a sample arranged in a vacuum process chamber, which apparatus includes a plasma generator for generating plasma inside the vacuum process chamber and process gas introducer for introducing a process gas into the vacuum process chamber, includes the steps of imparting mechanical oscillation to the semiconductor processing apparatus and detecting mechanical oscillation generated by the step of imparting mechanical oscillation inside the semiconductor processing apparatus.
摘要翻译： 一种诊断用于对设置在真空处理室中的样品施加等离子体处理的半导体处理装置的方法，该装置包括用于在真空处理室内产生等离子体的等离子体发生器和用于将处理气体引入真空处理室 包括以下步骤：向半导体处理装置施加机械振荡，并且检测通过在半导体处理装置内部施加机械振荡的步骤产生的机械振荡。
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公开(公告)号：US06716301B2
公开(公告)日：2004-04-06
申请号：US09799527
申请日：2001-03-07
申请人： Seiichiro Kanno , Ryoji Nishio , Tsutomu Tetsuka , Junichi Tanaka , Hideyuki Yamamoto , Kazuyuki Ikenaga , Saburou Kanai
发明人： Seiichiro Kanno , Ryoji Nishio , Tsutomu Tetsuka , Junichi Tanaka , Hideyuki Yamamoto , Kazuyuki Ikenaga , Saburou Kanai
IPC分类号： H01L21306
CPC分类号： H01J37/32174 , H01J37/321 , H01J37/3299 , H01L21/31116
摘要： A semiconductor manufacturing apparatus includes a unit for generating a plasma in a vacuum chamber, a wafer stage for holding a semiconductor wafer introduced into the vacuum chamber, a high frequency power supply for applying a high frequency voltage to the wafer stage, a wafer voltage probe for measuring a voltage of the semiconductor wafer at a rear surface of the semiconductor wafer, a current and voltage probe for measuring at least one of a voltage and a current applied to the wafer stage from the high frequency power supply, and a control portion. The control portion obtains an impedance from the semiconductor wafer to earth through the plasma on the basis of a voltage value of the semiconductor wafer measured by the wafer voltage probe, and a voltage value or a current value measured by the current and voltage probe, and performs a processing based on the obtained impedance.
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公开(公告)号：US06866744B2
公开(公告)日：2005-03-15
申请号：US10229072
申请日：2002-08-28
申请人： Go Miya , Junichi Tanaka , Tsutomu Tetsuka , Hideyuki Yamamoto
发明人： Go Miya , Junichi Tanaka , Tsutomu Tetsuka , Hideyuki Yamamoto
CPC分类号： H01L21/67288 , C23C16/5096 , C23C16/52 , H01J37/32935
摘要： A semiconductor processing apparatus for applying plasma treatment to a sample arranged in a vacuum process chamber includes a plasma generator for generating plasma inside the vacuum process chamber and a process gas supply for introducing a process gas into the vacuum process chamber. The apparatus further includes an oscillator for imparting mechanical oscillation to the semiconductor processing apparatus, a receiver for detecting mechanical oscillation generated by the oscillator in the semiconductor processing apparatus as a signal, and an analyzer for analyzing the detected signal to diagnose whether the vacuum process chamber is normally assembled.
摘要翻译： 用于对布置在真空处理室中的样品施加等离子体处理的半导体处理装置包括：用于在真空处理室内产生等离子体的等离子体发生器和用于将处理气体引入真空处理室的工艺气体供应。 该装置还包括用于向半导体处理装置施加机械振荡的振荡器，用于检测由半导体处理装置中的振荡器产生的机械振荡作为信号的接收器，以及用于分析检测信号以诊断真空处理室 正常组装。
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公开(公告)号：US09973763B2
公开(公告)日：2018-05-15
申请号：US13990893
申请日：2011-12-02
申请人： Masaru Ikeda , Junichi Tanaka , Yoshitaka Morigami
发明人： Masaru Ikeda , Junichi Tanaka , Yoshitaka Morigami
IPC分类号： H04N7/18 , H04N19/176 , H04N19/117 , H04N19/182 , H04N19/80 , H04N19/436 , H04N19/86 , H04N19/597 , H04N19/36
CPC分类号： H04N19/176 , H04N19/117 , H04N19/182 , H04N19/36 , H04N19/436 , H04N19/597 , H04N19/80 , H04N19/86
摘要： An image processing device including a decoding section configured to decode an image from an encoded stream, a determination section configured to perform determination processes of determining whether to apply a deblocking filter to neighboring blocks neighboring across a block boundary within an image to be decoded by the decoding section, a filtering section configured to apply a deblocking filter to neighboring blocks to which the determination section has determined to apply a deblocking filter, and a control section configured to allow the determination section to perform the determination processes for a vertical block boundary and a horizontal block boundary using pixels of the neighboring blocks of a reconstruct image as reference pixels.
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