公开(公告)号：US20080193840A1

公开(公告)日：2008-08-14

申请号：US12030528

申请日：2008-02-13

申请人： Takayuki Shirane ,  Kaoru Inoue ,  Masaya Ugaji ,  Masato Fujikawa ,  Toshitada Sato

发明人： Takayuki Shirane ,  Kaoru Inoue ,  Masaya Ugaji ,  Masato Fujikawa ,  Toshitada Sato

IPC分类号： H01M4/02

CPC分类号： H01M10/0525 ,  H01M4/13 ,  H01M4/131 ,  H01M4/485 ,  H01M2004/027 ,  H01M2300/004

摘要： A non-aqueous electrolyte secondary battery comprising at least a negative electrode having a current collector provided thereon with convex portions and columnar bodies formed on the convex portions, each of the columnar bodies comprising n stages (where n≧2) of overlaid columnar body portions alternately tilted to different orientations along a longitudinal direction of the current collector, a positive electrode having a positive electrode current collector provided on both surfaces thereof with a positive electrode mixture layer containing a positive electrode active material capable of inserting and extracting lithium ions reversibly, and a separator interposed between the positive electrode and the negative electrode in a confronting manner, wherein tip portions of the columnar body portions at the uppermost stage of the columnar bodies on the negative electrode are tilted toward a trailing end of winding direction.

摘要翻译： 本发明提供一种非水电解质二次电池，其至少包括具有设置在所述凸部上的集电体的集电体的负极和在所述凸部上形成的柱状体，所述柱状体包括重叠柱状体的n个阶段（n> = 2） 沿着集电体的长度方向交替地倾斜到不同取向的部分，具有正极集电体的正极具有正极集电体，该正极集电体在其两面设置有含有能够可逆地插入和提取锂离子的正极活性物质的正极合剂层， 以及相对于正极和负极之间插入的隔膜，其中负极上柱状体的最上段的柱状体部的末端部向卷绕方向的后端倾斜。

公开(公告)号：US07339207B2

公开(公告)日：2008-03-04

申请号：US11455631

申请日：2006-06-20

申请人： Tomohiro Murata ,  Yutaka Hirose ,  Yoshito Ikeda ,  Tsuyoshi Tanaka ,  Kaoru Inoue ,  Daisuke Ueda ,  Yasuhiro Uemoto

发明人： Tomohiro Murata ,  Yutaka Hirose ,  Yoshito Ikeda ,  Tsuyoshi Tanaka ,  Kaoru Inoue ,  Daisuke Ueda ,  Yasuhiro Uemoto

IPC分类号： H01L31/0328

CPC分类号： H01L29/7787 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41766

摘要： A semiconductor device has: a buffer layer formed on a conductive substrate and made of AlxGa1−xN with a high resistance; an element-forming layer formed on the buffer layer, having a channel layer, and made of undoped GaN and N-type AlyGa1−N; and a source electrode, a drain electrode and a gate electrode which are selectively formed on the element-forming layer. The source electrode is filled in a through hole provided in the buffer layer and the element-forming layer, and is thus electrically connected to the conductive substrate.

摘要翻译： 半导体器件具有：形成在导电衬底上并具有高电阻的Al x Ga 1-x N的缓冲层; 形成在缓冲层上的元件形成层，具有沟道层，由未掺杂的GaN和N型Al y Ga 1-y N构成; 以及选择性地形成在元件形成层上的源电极，漏电极和栅电极。

公开(公告)号：US20070292765A1

公开(公告)日：2007-12-20

申请号：US11791366

申请日：2005-09-28

申请人： Kaoru Inoue ,  Yusuke Fukumoto

发明人： Kaoru Inoue ,  Yusuke Fukumoto

IPC分类号： H01M4/02 ,  H01M10/40 ,  H01M4/04 ,  H01M4/62 ,  H01M4/58 ,  H01M2/16

CPC分类号： H01M4/131 ,  H01M2/1673 ,  H01M2/1686 ,  H01M4/0404 ,  H01M4/0471 ,  H01M4/133 ,  H01M4/1391 ,  H01M4/1393 ,  H01M4/62 ,  H01M4/621 ,  H01M10/0525 ,  Y10T29/49115

摘要： The present invention relates to an improvement in a lithium ion secondary battery including a positive electrode, a negative electrode, a separator, a non-aqueous electrolyte, and a porous film formed on at least one electrode surface. The porous film includes inorganic compound particles and polyvinylidene fluoride. The viscosity of the N-methyl-2-pyrrolidone solution dissolving 8 wt % polyvinylidene fluoride is 600 to 2400 mPa·s at 25° C., and the amount of the polyvinylidene fluoride in the porous film is 1 to 10 parts by weight per 100 parts by weight of the inorganic compound particles.

摘要翻译： 本发明涉及在至少一个电极表面上形成的包括正极，负极，隔膜，非水电解质和多孔膜的锂离子二次电池的改进。 多孔膜包括无机化合物颗粒和聚偏二氟乙烯。 溶解8重量％聚偏二氟乙烯的N-甲基-2-吡咯烷酮溶液的粘度在25℃下为600〜2400mPa.s，多孔膜中的聚偏二氟乙烯的量为1〜10重量份 100重量份的无机化合物颗粒。

公开(公告)号：US07261457B2

公开(公告)日：2007-08-28

申请号：US11299905

申请日：2005-12-13

申请人： Kaoru Inoue

发明人： Kaoru Inoue

IPC分类号： F21V7/04 ,  G02F1/1335

CPC分类号： G02B6/0031 ,  G02B6/0088

摘要： A surface light source conversion member, which converts emission light from a light source to planar light, has a predetermined thickness at a part thereof where a light incidence surface of a light guide, which is opposed to the light source, is located. A reflector, which reflects emission light from the light source toward the light incidence surface, includes a clamp portion that clamps the surface light source conversion member in a thickness direction thereof. The clamp portion contacts a corner portion that is formed between a light emission surface of the light guide and the light incidence surface of the light guide and is separated from the light emission surface. The reflector creates a gap, which is smaller than a predetermined thickness, between the light source and the light incidence surface.

摘要翻译： 将来自光源的发射光转换为平面光的面光源转换部件在与光源相对的导光体的入射面的一部分具有规定的厚度。 将来自光源的发射光反射到入射面的反射体包括：夹持部，其在表面光源转换部件的厚度方向上夹持。 夹持部分接触形成在导光体的光发射表面和光导入射表面之间并与光发射表面分离的角部。 反射器在光源和光入射表面之间产生小于预定厚度的间隙。

公开(公告)号：US20070029689A1

公开(公告)日：2007-02-08

申请号：US10576073

申请日：2004-10-13

申请人： Shinta Miyazumi ,  Yoshio Emoto ,  Kaoru Inoue

发明人： Shinta Miyazumi ,  Yoshio Emoto ,  Kaoru Inoue

IPC分类号： B29C47/06

CPC分类号： B29C48/832 ,  B29C48/04 ,  B29C48/05 ,  B29C48/07 ,  B29C48/08 ,  B29C48/09 ,  B29C48/17 ,  B29C48/185 ,  B29C48/21 ,  B29C48/269 ,  B29C48/27 ,  B29C48/625 ,  B29C48/83 ,  B29C48/865 ,  B29C48/92 ,  B29C2948/9298 ,  B29K2995/0067 ,  B29L2031/7172

摘要： A process for preparing a multilayer structure product in which it quickly becomes possible to obtain a satisfactory molded article after restarting the molding without using a special purging agent. In the process, which comprises feeding a saponified ethylene/vinyl acetate copolymer and other resins to a melt-molding machine having a die to mold a multilayer structure product, the saponified ethylene/vinyl acetate copolymer residing in the melt-molding machine is allowed to stand at a temperature lower by 0 to 100° C. than the melt-molding temperature throughout the period from a melt-molding process conducted for a certain time to restarting a melt-molding process.

摘要翻译： 一种制备多层结构产品的方法，其中在不使用特殊清洗剂的情况下，可以在重新开始成型之后迅速获得令人满意的模塑制品。 在该方法中，其包括将皂化的乙烯/乙酸乙烯酯共聚物和其它树脂加入到具有模具的熔模成型机中以模制多层结构产品，使位于熔融成型机中的皂化的乙烯/乙酸乙烯酯共聚物 在熔融模塑过程进行一段时间以至重新开始熔融模塑过程的整个时间段内的熔融模塑温度低于熔化模塑温度0至100℃的温度。

公开(公告)号：US20060251838A1

公开(公告)日：2006-11-09

申请号：US10548201

申请日：2004-03-05

申请人： Kaoru Inoue ,  Kenji Ninomiya

发明人： Kaoru Inoue ,  Kenji Ninomiya

IPC分类号： B32B27/08

CPC分类号： B32B27/306 ,  B32B7/12 ,  B32B27/08 ,  B32B27/16 ,  B32B27/30 ,  B32B27/302 ,  B32B27/32 ,  B32B2309/02 ,  B32B2439/00 ,  C08J7/047 ,  C08J7/123 ,  C08J2323/08 ,  C08J2423/00 ,  Y10T428/1352

摘要： The present invention provides a multilayer container excellent in shape stability of hot water resistance and transparency and particularly useful for a retort sterilization treatment and a boil sterilization treatment. It is preferable embodiment that the multilayer container of the present invention comprises a multilayer structure containing a layer having a hydrolyzed ethylene-vinyl acetate copolymer, and an irradiated treatment with the ionizing radiation of 1 to 50 kGy is conducted, and further, the layer having a hydrolyzed ethylene-vinyl acetate copolymer contains at least two kinds of hydrolyzed ethylene-vinyl acetate copolymers.

摘要翻译： 本发明提供了耐热水性和透明性的形状稳定性优异的多层容器，特别适用于蒸煮灭菌处理和煮沸灭菌处理。 优选的实施方式是，本发明的多层容器包含含有水解乙烯 - 乙酸乙烯酯共聚物的层的多层结构体，进行电晕放电1〜50kGy的照射处理，进一步具有 水解的乙烯 - 乙酸乙烯酯共聚物含有至少两种水解的乙烯 - 乙酸乙烯酯共聚物。

公开(公告)号：US20060234117A1

公开(公告)日：2006-10-19

申请号：US11402056

申请日：2006-04-12

申请人： Masato Fujikawa ,  Kohei Suzuki ,  Kaoru Inoue ,  Mikinari Shimada

发明人： Masato Fujikawa ,  Kohei Suzuki ,  Kaoru Inoue ,  Mikinari Shimada

IPC分类号： H01M2/18 ,  H01M2/02

CPC分类号： H01M10/0587 ,  H01M2/0207 ,  H01M2/0217 ,  H01M2/1673 ,  H01M10/052 ,  H01M10/4235 ,  Y02T10/7011

摘要： A prismatic lithium secondary battery includes: a prismatic battery can having a bottom, a side wall, and an open top; an electrode assembly; a non-aqueous electrolyte; and a sealing plate covering the open top of the battery can that accommodates the electrode assembly and the non-aqueous electrolyte. The electrode assembly includes: a positive electrode; a negative electrode; and a porous heat-resistant layer and a separator that are interposed between the positive and negative electrodes. The side wall of the battery can has two rectangular main flat portions that are opposed to each other, and the thickness A of the porous heat-resistant layer and the thickness B of each of the main flat portions of the side wall satisfy the relation: 0.003≦A/B≦0.05.

摘要翻译： 棱柱形锂二次电池包括：棱柱形电池罐，其具有底部，侧壁和敞开的顶部; 电极组件; 非水电解质; 以及覆盖电池壳的开口顶部的密封板，其容纳电极组件和非水电解质。 电极组件包括：正电极; 负极; 以及介于正极和负极之间的多孔耐热层和隔膜。 电池的侧壁可以具有彼此相对的两个矩形主平面部，多孔耐热层的厚度A和侧壁的主平面部的厚度B满足以下关系： 0.003 <= A / B <= 0.05。

公开(公告)号：US20060222943A1

公开(公告)日：2006-10-05

申请号：US11396655

申请日：2006-04-04

申请人： Masato Fujikawa ,  Kohei Suzuki ,  Kaoru Inoue ,  Mikinari Shimada

发明人： Masato Fujikawa ,  Kohei Suzuki ,  Kaoru Inoue ,  Mikinari Shimada

IPC分类号： H01M2/02 ,  H01M2/08 ,  H01M2/16

CPC分类号： H01M10/0525 ,  H01M2/1673 ,  H01M10/0587 ,  H01M10/4235 ,  Y02T10/7011

摘要： A cylindrical lithium secondary battery that is excellent in resistance to short-circuits, is capable of preventing a capacity loss due to dropping, and has a good balance in battery characteristics. The cylindrical lithium secondary battery includes: a cylindrical battery can; an electrode assembly; and a non-aqueous electrolyte. The electrode assembly has a porous heat-resistant layer that is interposed between the positive electrode and the negative electrode. The electrode assembly has a central cavity into which a hollow mandrel is inserted. The hollow mandrel has a slit that extends along the entire length thereof. The outer diameter A of the hollow mandrel and the width B of the slit satisfy the relation: 0.1≦B/A≦0.6.

摘要翻译： 具有优异的耐短路性的圆筒形锂二次电池能够防止由于落下而导致的容量损失，并且在电池特性方面具有良好的平衡。 圆柱形锂二次电池包括：圆柱形电池罐; 电极组件; 和非水电解质。 电极组件具有介于正极和负极之间的多孔耐热层。 电极组件具有插入中空心轴的中心空腔。 中空心轴具有沿其整个长度延伸的狭缝。 中空心轴的外径A和狭缝的宽度B满足关系：0.1 <= B / A <= 0.6。

公开(公告)号：US07105907B2

公开(公告)日：2006-09-12

申请号：US10453045

申请日：2003-06-03

申请人： Yoshito Ikeda ,  Kaoru Inoue ,  Yutaka Hirose ,  Katsunori Nishii

发明人： Yoshito Ikeda ,  Kaoru Inoue ,  Yutaka Hirose ,  Katsunori Nishii

IPC分类号： H01L27/095 ,  H01L29/47 ,  H01L29/812 ,  H01L31/0328 ,  H01L29/80

CPC分类号： H01L29/66871 ,  H01L29/2003 ,  H01L29/475 ,  H01L29/812

摘要： A buffer layer, an undoped gallium nitride layer, and an n-type gallium nitride active layer are formed on a sapphire substrate. Ohmic contacts and a Schottky contact are then formed on the n-type gallium nitride active layer as a source contact, a drain contact and a gate contact, respectively. The Schottky contact is a copper alloy, such as palladium copper, in which the content by weight of copper is 5%.

摘要翻译： 在蓝宝石衬底上形成缓冲层，未掺杂的氮化镓层和n型氮化镓活性层。 然后分别在作为源极接触，漏极接触和栅极接触的n型氮化镓有源层上形成欧姆接触和肖特基接触。 肖特基接触是铜合金，例如钯铜，其中铜的重量含量为5％。

公开(公告)号：US06812505B2

公开(公告)日：2004-11-02

申请号：US10605019

申请日：2003-09-02

申请人： Kaoru Inoue ,  Katsunori Nishii ,  Hiroyuki Masato

发明人： Kaoru Inoue ,  Katsunori Nishii ,  Hiroyuki Masato

IPC分类号： H01L29737

CPC分类号： H01L29/7783 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/42316

摘要： A semiconductor device includes: a substrate; a buffer layer including GaN formed on the substrate, wherein: surfaces of the buffer layer are c facets of Ga atoms; a channel layer including GaN or InGaN formed on the buffer layer, wherein: surfaces of the channel layer are c facets of Ga or In atoms; an electron donor layer including AlGaN formed on the channel layer, wherein: surfaces of the electron donor layer are c facets of Al or Ga atoms; a source electrode and a drain electrode formed on the electron donor layer; a cap layer including GaN or InGaAlN formed between the source electrode and the drain electrode, wherein: surfaces of the cap layer are c facets of Ga or In atoms and at least a portion of the cap layer is in contact with the electron donor layer; and a gate electrode formed at least a portion of which is in contact with the cap layer.

摘要翻译： 半导体器件包括：衬底; 包括形成在衬底上的GaN的缓冲层，其中：缓冲层的表面是Ga原子的c个面; 在缓冲层上形成包括GaN或InGaN的沟道层，其中：沟道层的表面是Ga或In原子的c面; 包括形成在沟道层上的AlGaN的电子给体层，其中：电子给体层的表面是Al或Ga原子的c个面; 形成在电子供体层上的源电极和漏电极; 形成在源电极和漏电极之间的包含GaN或InGaAlN的覆盖层，其中：覆盖层的表面是Ga或In原子的c面，并且覆盖层的至少一部分与电子给体层接触; 以及形成为至少一部分与盖层接触的栅电极。