公开(公告)号：US20110227836A1

公开(公告)日：2011-09-22

申请号：US12725699

申请日：2010-03-17

申请人： Hao Li ,  Papu Maniar ,  Yi Wei

发明人： Hao Li ,  Papu Maniar ,  Yi Wei

IPC分类号： G06F3/041 ,  B05D5/12

CPC分类号： G06F3/047 ,  G01L1/20 ,  G01L1/205 ,  G06F3/0414 ,  G06F2203/04103

摘要： A transparent force sensor for use in touch panel displays (touch screens) and method for fabricating the same are disclosed. The transparent force sensor is capable of detecting touch by measuring local pressure applied by a touch input to a display area of the touch screen.

摘要翻译： 公开了一种用于触摸屏显示器（触摸屏）的透明力传感器及其制造方法。 透明力传感器能够通过测量由触摸输入施加到触摸屏的显示区域的局部压力来检测触摸。

公开(公告)号：US20110050588A1

公开(公告)日：2011-03-03

申请号：US12549008

申请日：2009-08-27

申请人： Hao Li ,  Papu Maniar ,  Yi Wei ,  Keshu Zhang ,  Haifeng Li

发明人： Hao Li ,  Papu Maniar ,  Yi Wei ,  Keshu Zhang ,  Haifeng Li

IPC分类号： G06F3/041

CPC分类号： G06F3/0414 ,  G06F3/045 ,  G06F3/04883

摘要： Methods and apparatus are provided for manipulating content displayed on a touch screen utilizing a transparent pressure-sensing touch panel. A method comprises displaying content on the touch screen and obtaining one or more pressure metrics for an input gesture on the transparent pressure-sensing touch panel. Each pressure metric corresponds to pressure (or force) applied to the transparent pressure-sensing touch panel by a respective impression of the input gesture. The method further comprises adjusting the displayed content on the touch screen in response to the input gesture, wherein the displayed content is adjusted based on to the one or more pressure metrics for the input gesture.

摘要翻译： 提供了使用透明压力感测触摸面板来操纵显示在触摸屏上的内容的方法和装置。 一种方法包括在触摸屏上显示内容并获得在透明压力感测触摸面板上的输入手势的一个或多个压力指标。 每个压力度量对应于通过输入姿势的相应印象施加到透明压力感测触摸面板的压力（或力）。 该方法还包括响应于输入手势来调整触摸屏上的显示内容，其中基于输入手势的一个或多个压力指标调整显示的内容。

公开(公告)号：US20110050394A1

公开(公告)日：2011-03-03

申请号：US12548983

申请日：2009-08-27

申请人： Keshu Zhang ,  Ken Douros ,  Haifeng Li ,  Hao Li ,  Yi Wei

发明人： Keshu Zhang ,  Ken Douros ,  Haifeng Li ,  Hao Li ,  Yi Wei

IPC分类号： G06F7/04

CPC分类号： G06F3/045 ,  G06F21/32

摘要： Systems and methods are provided for authenticating an input on a touch screen. A method comprises obtaining one or more pressure metrics for an input by a user on a touch screen that is being proffered as that of a known user. Each pressure metric corresponds to a pressure applied to the touch screen by the user at a respective impression location of the input. The method further comprises authenticating the user as the known user based at least in part on the one or more pressure metrics.

摘要翻译： 提供了用于在触摸屏上验证输入的系统和方法。 一种方法包括获得用户在被提供为已知用户的触摸屏上的输入的一个或多个压力指标。 每个压力度量对应于用户在输入的相应印象位置施加到触摸屏的压力。 该方法还包括至少部分地基于一个或多个压力度量来将用户认证为已知用户。

公开(公告)号：US20100197927A1

公开(公告)日：2010-08-05

申请号：US12530281

申请日：2008-02-26

申请人： Fajun Nan ,  Jia Li ,  Yi Wei ,  Wei Zhang ,  Jingya Li ,  Lei Shi

发明人： Fajun Nan ,  Jia Li ,  Yi Wei ,  Wei Zhang ,  Jingya Li ,  Lei Shi

IPC分类号： C07D277/30 ,  C07D417/12

CPC分类号： C07D277/30 ,  C07D417/12

摘要： PTP1B inhibitors with the following structure (formula I). Experiments indicate that these inhibitors can effectively inhibit the activity of protein tyrosine phosphatase 1B (PTP1B). They can be used as insulin sensitisers. They can be used to prevent, delay or treat diseases which are related to insulin antagonism mediated by PTP1B, especially diabetes type II and obesity. The invention also provides methods for preparing these inhibitors.

摘要翻译： 具有以下结构的PTP1B抑制剂（式I）。 实验表明，这些抑制剂能有效抑制蛋白酪氨酸磷酸酶1B（PTP1B）的活性。 它们可以用作胰岛素敏化剂。 它们可用于预防，延迟或治疗与PTP1B介导的胰岛素拮抗相关的疾病，特别是II型糖尿病和肥胖症。 本发明还提供了制备这些抑制剂的方法。

公开(公告)号：US20100037245A1

公开(公告)日：2010-02-11

申请号：US12188989

申请日：2008-08-08

申请人： Shuo Wei Chang ,  Yi Wei

发明人： Shuo Wei Chang ,  Yi Wei

IPC分类号： G11B17/03

CPC分类号： G11B17/056 ,  G11B17/08

摘要： The present invention relates to design and construction of a mini and compact optical disc autoloader. By way of a flip-flop device positioned and pivoted between two disc trays, the robotic arm movement is simplified to a one-dimensional linear fashion and greatly reduces the cost of production and also cost of maintenance. The present invention also allows for multiple write drives to be easily built into present invention, creating an efficient duplicating system. It can be used for the home and small business environment for small volume optical duplication, storage and management.

摘要翻译： 本发明涉及一种小型和紧凑型光盘自动装载机的设计和构造。 通过定位和枢转在两个盘托盘之间的触发器装置，机器人手臂运动被简化为一维线性方式，并且大大降低了生产成本和维护成本。 本发明还允许将多个写入驱动器容易地构建到本发明中，从而创建有效的复制系统。 它可以用于家庭和小型商业环境，用于小批量光学复制，存储和管理。

公开(公告)号：US20090237374A1

公开(公告)日：2009-09-24

申请号：US12052365

申请日：2008-03-20

申请人： Hao Li ,  Papu Maniar ,  Yi Wei

发明人： Hao Li ,  Papu Maniar ,  Yi Wei

IPC分类号： G06F3/045 ,  B32B5/16

CPC分类号： G06F3/0414 ,  G06F3/0488 ,  Y10T428/25

摘要： A material (100) includes a transparent matrix (102) comprising at least one polymer material, and a plurality of transparent conducting particles (104) dispersed in the transparent matrix (102). The material (100) may be disposed between an array of conductive intersects to form a transparent piezoresistive sensor (300, 602). A controller (606) is coupled to the transparent piezoresistive sensor (300, 602) for sensing (702, 802, 902) a change in resistance when pressure is applied to the transparent matrix. One or more pressure levels and/or one or more locations may be sensed (704, 804, 904) to enable a function.

摘要翻译： 材料（100）包括包含至少一种聚合物材料的透明基质（102）和分散在透明基质（102）中的多个透明导电颗粒（104）。 材料（100）可以设置在导电相交阵列之间，以形成透明压阻传感器（300,602）。 控制器（606）耦合到透明压阻传感器（300,602），用于在对透明矩阵施加压力时感测（702,802,902）电阻变化。 可以感测到一个或多个压力水平和/或一个或多个位置以启用功能（704,804,904）。

公开(公告)号：US07169619B2

公开(公告)日：2007-01-30

申请号：US10299246

申请日：2002-11-19

申请人： Yong Liang ,  Ravindranath Droopad ,  Xiaoming Hu ,  Jun Wang ,  Yi Wei ,  Zhiyi Yu

发明人： Yong Liang ,  Ravindranath Droopad ,  Xiaoming Hu ,  Jun Wang ,  Yi Wei ,  Zhiyi Yu

IPC分类号： H01L21/00

CPC分类号： H01L21/02197 ,  C30B23/02 ,  C30B29/24 ,  H01L21/02293 ,  H01L21/31604 ,  H01L21/31691

摘要： High quality epitaxial layers of monocrystalline oxide materials (24) can be grown overlying monocrystalline substrates (22) such as large silicon wafers. The monocrystalline oxide layer (24) comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer serves as a decoupling layer between the substrate and the buffer layer so that the substrate and the buffer is crystal-graphically, chemically, and dielectrically decoupled. In addition, high quality epitaxial accommodating buffer layers may be formed overlying vicinal substrates using a low pressure, low temperature, alkaline-earth metal-rich process.

摘要翻译： 单晶氧化物材料（24）的高质量外延层可以生长在覆盖单晶衬底（22）如大硅晶片上。 单晶氧化物层（24）包括通过氧化硅的非晶界面层（28）与硅晶片间隔开的单晶氧化物层。 非晶界面层用作衬底和缓冲层之间的去耦层，使得衬底和缓冲器是晶体图，化学和介电解耦的。 此外，可以使用低压，低温，富碱土金属的工艺在邻近衬底上形成高质量的外延容纳缓冲层。

公开(公告)号：US20060134329A1

公开(公告)日：2006-06-22

申请号：US11016406

申请日：2004-12-17

申请人： Yi Wei ,  Jeffrey Baker ,  Bernard Coll ,  Steven Smith

发明人： Yi Wei ,  Jeffrey Baker ,  Bernard Coll ,  Steven Smith

IPC分类号： C23C16/00 ,  D01F9/12 ,  B05D5/12 ,  B05D3/10

CPC分类号： D01F9/1272 ,  B01J23/755 ,  B01J37/0238 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  H01J9/025 ,  H01J2201/30469

摘要： A method is provided for forming a porous metal catalyst (44) on a substrate (42) for nanotube (84) growth in an emissive display. The method comprises depositing a metal (44) onto a surface of a substrate (12) at an angle (Θ) to the surface, depositing a metal catalyst (72) onto the metal (44), and forming nanotubes (84) on the metal catalyst (72).

摘要翻译： 提供了一种在发射显示器中用于在纳米管（84）生长的衬底（42）上形成多孔金属催化剂（44）的方法。 该方法包括以与该表面成角度（θ）将金属（44）沉积到基底（12）的表面上，在金属（44）上沉积金属催化剂（72），并在金属（44）上形成纳米管 金属催化剂（72）。

公开(公告)号：US20060024970A1

公开(公告)日：2006-02-02

申请号：US10901589

申请日：2004-07-29

申请人： Steven Smith ,  Diana Convey ,  Andy Hooper ,  Yi Wei

发明人： Steven Smith ,  Diana Convey ,  Andy Hooper ,  Yi Wei

IPC分类号： H01L21/461

CPC分类号： H01L21/02052 ,  H01L21/02046 ,  Y10S438/906

摘要： A method for preparing a semiconductor substrate surface (28) for semiconductor device fabrication, includes providing a semiconductor substrate (20) having a pure Ge surface layer (28) or a Ge-containing surface layer (12), such as SiGe. The semiconductor substrate (20) is cleaned using a first oxygen plasma process (14) to remove foreign matter (30) from the surface (28) of the substrate (20). The substrate surface (28) is next immersed in a hydrochloric acid solution (16) to remove additional foreign matter (30) from the surface (28) of the substrate (20). The immersion step is followed by a second oxygen plasma etch process (18), passivate the surface with a passivation layer (34), and provide for an atomically smooth surface for subsequent epitaxial or gate dielectric growth.

公开(公告)号：US06420729B1

公开(公告)日：2002-07-16

申请号：US09747966

申请日：2000-12-27

申请人： Robert M. Wallace ,  Glen D. Wilk ,  Yi Wei ,  Sunil V. Hattangady

发明人： Robert M. Wallace ,  Glen D. Wilk ,  Yi Wei ,  Sunil V. Hattangady

IPC分类号： H01L2904

摘要： A method of making a semiconductor device and the device. The device, according to a first embodiment, is fabricated by providing a silicon (111) surface, forming on the surface a dielectric layer of crystalline silicon nitride and forming an electrode layer on the dielectric layer of silicon nitride. The silicon (111) surface is cleaned and made atomically flat. The dielectric layer if formed of crystalline silicon nitride by placing the surface in an ammonia ambient at a pressure of from about 1×10−7 to about 1×10−5 Torr at a temperature of from about 850° C. to about 1000° C. The electrode layer is heavily doped silicon. According to a second embodiment, there is provided a silicon (111) surface on which is formed a first dielectric layer of crystalline silicon nitride having a thickness of about 2 monolayers. A second dielectric layer compatible with silicon nitride and having a higher dielectric constant than silicon nitride is formed on the first dielectric layer and an electrode layer is formed over the second dielectric layer. A third dielectric layer of silicon nitride having a thickness of about 2 monolayers can be formed between the second dielectric layer and the electrode layer. The second dielectric layer is preferably taken from the class consisting of tantalum pentoxide, titanium dioxide and a perovskite material. Both silicon nitride layers can be formed as in the first embodiment. The electrode layer is preferably heavily doped silicon