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    Method for fabricating a semiconductor structure including a metal oxide interface with silicon
    2.
    发明授权
    Method for fabricating a semiconductor structure including a metal oxide interface with silicon 失效
    包括与硅的金属氧化物界面的半导体结构的方法

    公开(公告)号：US06709989B2

    公开(公告)日：2004-03-23

    申请号：US09885409

    申请日：2001-06-21

    Applicant: Jamal Ramdani ,  Ravindranath Droopad ,  Zhiyi Yu

    Inventor： Jamal Ramdani ,  Ravindranath Droopad ,  Zhiyi Yu

    IPC: H01L2100

    CPC classification number: H01L21/3141 ,  H01L21/02172 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/316 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31645 ,  H01L21/31691

    Abstract: A method of fabricating a semiconductor structure including the steps of: providing a silicon substrate having a surface; forming by atomic layer deposition a monocrystalline seed layer on the surface of the silicon substrate; and forming by atomic layer deposition one or more layers of a monocrystalline high dielectric constant oxide on the seed layer, where providing a substrate includes providing a substrate having formed thereon a silicon oxide, and wherein forming by atomic layer deposition a seed layer further includes depositing a layer of a metal oxide onto a surface of the silicon oxide, flushing the layer of metal oxide with an inert gas, and reacting the metal oxide and the silicon oxide to form a monocrystalline silicate.

    Abstract translation: 一种制造半导体结构的方法，包括以下步骤：提供具有表面的硅衬底;通过原子层沉积在硅衬底的表面上形成单晶种子层; 并且通过原子层沉积形成在种子层上的单晶高介电常数氧化物的一层或多层，其中提供衬底包括提供其上形成有氧化硅的衬底，并且其中通过原子层沉积形成晶种层还包括沉积 在氧化硅表面上的金属氧化物层，用惰性气体冲洗金属氧化物层，并使金属氧化物和氧化硅反应形成单晶硅酸盐。

    Method for fabricating a semiconductor structure having a stable crystalline interface with silicon
    3.
    发明授权
    Method for fabricating a semiconductor structure having a stable crystalline interface with silicon 有权
    制造具有与硅稳定的结晶界面的半导体结构的方法

    公开(公告)号：US06291319B1

    公开(公告)日：2001-09-18

    申请号：US09465622

    申请日：1999-12-17

    Applicant: Zhiyi Yu ,  Jun Wang ,  Ravindranath Droopad ,  Jamal Ramdani

    Inventor： Zhiyi Yu ,  Jun Wang ,  Ravindranath Droopad ,  Jamal Ramdani

    IPC: H01L2120

    CPC classification number: H01L21/318 ,  C30B23/02 ,  C30B29/16 ,  C30B29/32 ,  H01L21/3144 ,  H01L21/31691 ,  H01L28/56

    Abstract: A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, nitrogen, and a metal; and forming one or more layers of a single crystal oxide (26) on the interface. The interface comprises an atomic layer of silicon, nitrogen, and a metal in the form MSiN2, where M is a metal. In a second embodiment, the interface comprises an atomic layer of silicon, a metal, and a mixture of nitrogen and oxygen in the form MSi[N1−Ox]2, where M is a metal and X is 0≦X

    Abstract translation: 一种制造半导体结构的方法包括以下步骤：提供具有表面（12）的硅衬底（10）; 在所述硅衬底的表面上形成包含硅，氮和金属的单原子层的界面（14）; 以及在界面上形成一层或多层单晶氧化物（26）。 该界面包括硅，氮和MSiN 2形式的金属的原子层，其中M是金属。 在第二个实施方案中，界面包括形式为MSi [N1-Ox] 2的硅，金属以及氮和氧的混合物的原子层，其中M是金属，X是0 <= X <1。

    Method for fabricating a semiconductor structure with reduced leakage current density
    4.
    发明授权
    Method for fabricating a semiconductor structure with reduced leakage current density 有权
    制造漏电流密度降低的半导体结构的方法

    公开(公告)号：US06270568B1

    公开(公告)日：2001-08-07

    申请号：US09354173

    申请日：1999-07-15

    Applicant: Ravindranath Droopad ,  Zhiyi Yu ,  Jamal Ramdani

    Inventor： Ravindranath Droopad ,  Zhiyi Yu ,  Jamal Ramdani

    IPC: C30B100

    CPC classification number: H01L28/56 ,  H01L21/31662 ,  H01L21/31683 ,  H01L21/31691

    Abstract: A method for fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12); forming an interface including a seed layer (18) adjacent to the surface (12) of the silicon substrate (10), forming a buffer layer (20) utilizing molecular oxygen; and forming one or more layers of a high dielectric constant oxide (22) on the buffer layer (20) utilizing activated oxygen.

    Abstract translation: 一种制造半导体结构的方法，包括以下步骤：提供具有表面（12）的硅衬底（10）; 形成包括与所述硅衬底（10）的所述表面（12）相邻的晶种层（18）的界面，使用分子氧形成缓冲层（20）; 以及使用活性氧在缓冲层（20）上形成一层或多层高介电常数氧化物（22）。

    Alkaline-earth metal silicides on silicon
    6.
    发明授权
    Alkaline-earth metal silicides on silicon 失效
    硅上的碱土金属硅化物

    公开(公告)号：US06022410A

    公开(公告)日：2000-02-08

    申请号：US144921

    申请日：1998-09-01

    Applicant: Zhiyi Yu ,  Jun Wang ,  Ravindranath Droopad ,  Daniel S. Marshall ,  Jerald A. Hallmark ,  Jonathan K. Abrokwah

    Inventor： Zhiyi Yu ,  Jun Wang ,  Ravindranath Droopad ,  Daniel S. Marshall ,  Jerald A. Hallmark ,  Jonathan K. Abrokwah

    IPC: H01L21/203 ,  C30B23/02 ,  C30B29/10 ,  C30B23/00

    CPC classification number: C30B23/02 ,  C30B29/10

    Abstract: A method of forming a thin silicide layer on a silicon substrate 12 including heating the surface of the substrate to a temperature of approximately 500.degree. C. to 750.degree. C. and directing an atomic beam of silicon 18 and an atomic beam of an alkaline-earth metal 20 at the heated surface of the substrate in a molecular beam epitaxy chamber at a pressure in a range below 10.sup.-9 Torr. The silicon to alkaline-earth metal flux ratio is kept constant (e.g. Si/Ba flux ratio is kept at approximately 2:1) so as to form a thin alkaline-earth metal silicide layer (e.g. BaSi.sub.2) on the surface of the substrate. The thickness is determined by monitoring in situ the surface of the single crystal silicide layer with RHEED and terminating the atomic beam when the silicide layer is a selected submonolayer to one monolayer thick.

    Abstract translation: 一种在硅衬底12上形成薄硅化物层的方法，包括将衬底的表面加热至约500℃至750℃的温度，并引导硅18的原子束和碱性电子束的原子束， 在分子束外延室中的衬底的加热表面处的压力在10-9乇以下的地球金属20。 将硅与碱土金属的通量比保持恒定（例如，Si / Ba通量比保持在约2:1），以在衬底的表面上形成薄的碱土金属硅化物层（例如BaSi 2）。 通过用RHEED原位监测单晶硅化物层的表面并且当硅化物层是选择的亚单层至一个单层厚度时终止原子束来确定厚度。

    Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
    8.
    发明授权
    Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same 失效
    用于制造绝缘体外延半导体（SOI）结构的结构和方法以及利用形成用于形成绝缘体材料的材料形成柔性衬底的器件

    公开(公告)号：US06693298B2

    公开(公告)日：2004-02-17

    申请号：US09908707

    申请日：2001-07-20

    Applicant: Kurt W. Eisenbeiser ,  Zhiyi Yu ,  Ravindranath Droopad

    Inventor： Kurt W. Eisenbeiser ,  Zhiyi Yu ,  Ravindranath Droopad

    IPC: H01L2904

    CPC classification number: H01L21/7624 ,  C30B25/18 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02532

    Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. A monocrystalline layer is then formed over the accommodating buffer layer, such that a lattice constant of the monocrystalline layer substantially matches the lattice constant of a subsequently grown monocrystalline film.

    Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 然后在容纳缓冲层上形成单晶层，使得单晶层的晶格常数与随后生长的单晶膜的晶格常数基本一致。

    Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with silicon
    9.
    发明授权
    Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with silicon 失效
    具有结晶碱土金属氮化硅/氧化物与硅的界面的半导体结构

    公开(公告)号：US06479173B1

    公开(公告)日：2002-11-12

    申请号：US09465623

    申请日：1999-12-17

    Applicant: Zhiyi Yu ,  Jun Wang ,  Ravindranath Droopad ,  Alexander Demkov ,  Jerald Allan Hallmark ,  Jamal Ramdani

    Inventor： Zhiyi Yu ,  Jun Wang ,  Ravindranath Droopad ,  Alexander Demkov ,  Jerald Allan Hallmark ,  Jamal Ramdani

    IPC: B32B900

    CPC classification number: H01L21/3144 ,  H01L21/31691 ,  H01L21/318 ,  H01L28/56

    Abstract: A semiconductor structure comprises a silicon substrate (10), one or more layers of single crystal oxides or nitrides (26), and an interface (14) between the silicon substrate and the one or more layers of single crystal oxides or nitrides, the interface manufactured with a crystalline material which matches the lattice constant of silicon. The interface comprises an atomic layer of silicon, nitrogen, and a metal in the form MSiN2, where M is a metal. In a second embodiment, the interface comprises an atomic layer of silicon, a metal, and a mixture of nitrogen and oxygen in the form MSi[N1−xOx]2, where M is a metal and X is 0≦X

    Abstract translation: 半导体结构包括硅衬底（10），一层或多层单晶氧化物或氮化物（26），以及在硅衬底和一层或多层单晶氧化物或氮化物之间的界面（14），界面 用与硅的晶格常数匹配的结晶材料制成。 该界面包括硅，氮和MSiN 2形式的金属的原子层，其中M是金属。 在第二个实施方案中，界面包括形式为MSi [N1-xOx] 2的硅原子层，金属和氮和氧的混合物，其中M是金属，X是0 <= X <1。

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