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公开(公告)号：US20060157677A1
公开(公告)日：2006-07-20
申请号：US11373460
申请日：2006-03-10
申请人： Klaus Kunze , Scott Haubrich , Fabio Zurcher , Brent Ridley , Joerg Rockenberger
发明人： Klaus Kunze , Scott Haubrich , Fabio Zurcher , Brent Ridley , Joerg Rockenberger
IPC分类号： H01B1/12
CPC分类号： C23C18/14 , C09D11/52 , C23C18/1204 , C23C18/1212 , C23C18/122 , C23C18/1225 , C23C18/127 , C23C18/1275 , H01L21/02532 , H01L21/02601 , H01L21/02636 , H01L29/66757 , Y10T428/24802 , Y10T428/24926 , Y10T428/31663
摘要： Compositions, inks and methods for forming a patterned silicon-containing film and patterned structures including such a film. The composition generally includes (a) passivated semiconductor nanoparticles and (b) first and second cyclic Group IVA compounds in which the cyclic species predominantly contains Si and/or Ge atoms. The ink generally includes the composition and a solvent in which the composition is soluble. The method generally includes the steps of (1) printing the composition or ink on a substrate to form a pattern, and (2) curing the patterned composition or ink. In an alternative embodiment, the method includes the steps of (i) curing either a semiconductor nanoparticle composition or at least one cyclic Group IVA compound to form a thin film, (ii) coating the thin film with the other, and (iii) curing the coated thin film to form a semiconducting thin film. The semiconducting thin film includes a sintered mixture of semiconductor nanoparticles in hydrogenated, at least partially amorphous silicon and/or germanium. The thin film exhibits improved conductivity, density, adhesion and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without either the semiconductor nanoparticles or the hydrogenated Group IVA element polymer. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput printing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.
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公开(公告)号：US07315068B2
公开(公告)日：2008-01-01
申请号：US11077240
申请日：2005-03-09
申请人： Scott Haubrich , Klaus Kunze , James C. Dunphy , Chris Gudeman , Joerg Rockenberger , Fabio Zurcher , Nassrin Sleiman , Mao Takashima , Chris Spindt
发明人： Scott Haubrich , Klaus Kunze , James C. Dunphy , Chris Gudeman , Joerg Rockenberger , Fabio Zurcher , Nassrin Sleiman , Mao Takashima , Chris Spindt
IPC分类号： H01L29/94
CPC分类号： H01L27/1292
摘要： The present invention is directed to methods for making electronic devices with a thin anisotropic conducting layer interface layer formed between a substrate and an active device layer that is preferably patterned conductive layer. The interface layer preferably provides Ohmic and/or rectifying contact between the active device layer and the substrate and preferably provides good adhesion of the active device layer to the substrate. The active device layer is preferably fashioned from a nanoparticle ink solution that is patterned using embossing methods or other suitable printing and/or imaging methods. The active device layer is preferably patterned into an array of gate structures suitable for the fabrication of thin film transistors and the like.
摘要翻译： 本发明涉及用于制造具有薄的各向异性导电层界面层的电子器件的方法，所述薄的各向异性导电层界面层形成在衬底和优选图案化导电层的有源器件层之间。 界面层优选地在有源器件层和衬底之间提供欧姆和/或整流接触，并且优选地提供有源器件层与衬底的良好粘附。 活性器件层优选由使用压花方法或其它合适的印刷和/或成像方法图案化的纳米颗粒油墨溶液形成。 有源器件层优选地被图案化成适于制造薄膜晶体管等的栅极结构的阵列。
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公开(公告)号：US20050164480A1
公开(公告)日：2005-07-28
申请号：US11077240
申请日：2005-03-09
申请人： Scott Haubrich , Klaus Kunze , James Dunphy , Chris Gudeman , Joerg Rockenberger , Fabio Zurcher , Nassrin Sleiman , Mao Takashima , Christopher Spindt
发明人： Scott Haubrich , Klaus Kunze , James Dunphy , Chris Gudeman , Joerg Rockenberger , Fabio Zurcher , Nassrin Sleiman , Mao Takashima , Christopher Spindt
CPC分类号： H01L27/1292
摘要： The present invention is directed to methods for making electronic devices with a thin anisotropic conducting layer interface layer formed between a substrate and an active device layer that is preferably patterned conductive layer. The interface layer preferably provides Ohmic and/or rectifying contact between the active device layer and the substrate and preferably provides good adhesion of the active device layer to the substrate. The active device layer is preferably fashioned from a nanoparticle ink solution that is patterned using embossing methods or other suitable printing and/or imaging methods. The active device layer is preferably patterned into an array of gate structures suitable for the fabrication of thin film transistors and the like.
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公开(公告)号：US06911385B1
公开(公告)日：2005-06-28
申请号：US10226903
申请日：2002-08-22
申请人： Scott Haubrich , Klaus Kunze , James C Dunphy , Chris Gudeman , Joerg Rockenberger , Fabio Zurcher , Nassrin Sleiman , Mao Takashima , Chris Spindt
发明人： Scott Haubrich , Klaus Kunze , James C Dunphy , Chris Gudeman , Joerg Rockenberger , Fabio Zurcher , Nassrin Sleiman , Mao Takashima , Chris Spindt
CPC分类号： H01L27/1292
摘要： The present invention is directed to methods for making electronic devices with a thin anisotropic conducting layer interface layer formed between a substrate and an active device layer that is preferably patterned conductive layer. The interface layer preferably provides Ohmic and/or rectifying contact between the active device layer and the substrate and preferably provides good adhesion of the active device layer to the substrate. The active device layer is preferably fashioned from a nanoparticle ink solution that is patterned using embossing methods or other suitable printing and/or imaging methods. The active device layer is preferably patterned into an array of gate structures suitable for the fabrication of thin film transistors and the like.
摘要翻译： 本发明涉及用于制造具有薄的各向异性导电层界面层的电子器件的方法，所述薄的各向异性导电层界面层形成在衬底和优选图案化导电层的有源器件层之间。 界面层优选地在有源器件层和衬底之间提供欧姆和/或整流接触，并且优选地提供有源器件层与衬底的良好粘附。 活性器件层优选由使用压花方法或其它合适的印刷和/或成像方法图案化的纳米颗粒油墨溶液形成。 有源器件层优选地被图案化成适于制造薄膜晶体管等的栅极结构的阵列。
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公开(公告)号：US08853677B1
公开(公告)日：2014-10-07
申请号：US13162193
申请日：2011-06-16
申请人： Joerg Rockenberger , Yu Chen , Fabio Zürcher , Scott Haubrich
发明人： Joerg Rockenberger , Yu Chen , Fabio Zürcher , Scott Haubrich
IPC分类号： H01L29/08
CPC分类号： H01L21/28518 , C09D11/52 , H01L21/288 , H01L21/76838 , H01L29/456 , H01L29/458
摘要： Metal ink compositions, methods of forming such compositions, and methods of forming conductive layers are disclosed. The ink composition includes a bulk metal, a transition metal source, and an organic solvent. The transition metal source may be a transition metal capable of forming a silicide, in an amount providing from 0.01 to 50 at. % of the transition metal relative to the bulk metal. Conductive structures may be made using such ink compositions by forming a silicon-containing layer on a substrate, printing a metal ink composition on the silicon-containing layer, and curing the composition. The metal inks of the present invention have high conductivity and form low resistivity contacts with silicon, and reduce the number of inks and printing steps needed to fabricate integrated circuits.
摘要翻译： 公开了金属油墨组合物，形成这种组合物的方法，以及形成导电层的方法。 油墨组合物包括本体金属，过渡金属源和有机溶剂。 过渡金属源可以是能够形成硅化物的过渡金属，其量为0.01至50at。 过渡金属相对于本体金属的％。 导电结构可以使用这样的油墨组合物，通过在基底上形成含硅层，在含硅层上印刷金属油墨组合物，并固化组合物。 本发明的金属油墨具有高导电性并与硅形成低电阻接触，并减少制造集成电路所需的油墨数量和印刷步骤。
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公开(公告)号：US07977240B1
公开(公告)日：2011-07-12
申请号：US12371239
申请日：2009-02-13
申请人： Joerg Rockenberger , Yu Chen , Fabio Zürcher , Scott Haubrich
发明人： Joerg Rockenberger , Yu Chen , Fabio Zürcher , Scott Haubrich
IPC分类号： H01L21/44 , H01L21/4763
CPC分类号： H01L21/28518 , C09D11/52 , H01L21/288 , H01L21/76838 , H01L29/456 , H01L29/458
摘要： Metal ink compositions, methods of forming such compositions, and methods of forming conductive layers are disclosed. The ink composition includes a bulk metal, a transition metal source, and an organic solvent. The transition metal source may be a transition metal capable of forming a silicide, in an amount providing from 0.01 to 50 at. % of the transition metal relative to the bulk metal. Conductive structures may be made using such ink compositions by forming a silicon-containing layer on a substrate, printing a metal ink composition on the silicon-containing layer, and curing the composition. The metal inks of the present invention have high conductivity and form low resistivity contacts with silicon, and reduce the number of inks and printing steps needed to fabricate integrated circuits.
摘要翻译： 公开了金属油墨组合物，形成这种组合物的方法，以及形成导电层的方法。 油墨组合物包括本体金属，过渡金属源和有机溶剂。 过渡金属源可以是能够形成硅化物的过渡金属，其量为0.01至50at。 过渡金属相对于本体金属的％。 导电结构可以使用这样的油墨组合物，通过在基底上形成含硅层，在含硅层上印刷金属油墨组合物，并固化组合物。 本发明的金属油墨具有高导电性并与硅形成低电阻接触，并减少制造集成电路所需的油墨数量和印刷步骤。
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公开(公告)号：US20100244133A1
公开(公告)日：2010-09-30
申请号：US12797274
申请日：2010-06-09
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L21/316 , H01L21/02211 , H01L21/02288 , H01L21/02318 , H01L21/3165 , H01L27/1285 , H01L27/1292 , H01L29/66757 , H01L29/78621
摘要： A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.
摘要翻译： 一种用于制造诸如MOS晶体管的电子器件的方法，包括以下步骤：在电功能衬底上形成多个半导体岛，在第一半导体岛子集上或第二子体上印刷第一电介质层， 在半导体岛的第二子集上或之上，以及退火。 第一介电层包含第一掺杂剂，并且（任选的）第二介电层包含不同于第一掺杂剂的第二掺杂剂。 电介质层，半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中，并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。
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公开(公告)号：US20140094004A1
公开(公告)日：2014-04-03
申请号：US13633816
申请日：2012-10-02
IPC分类号： H01L21/336
CPC分类号： H01L27/1292 , H01L29/66757
摘要： A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.
摘要翻译： 一种用于制造诸如MOS晶体管的电子器件的方法，包括以下步骤：在电功能衬底上形成多个半导体岛，在第一半导体岛子集上或第二子体上印刷第一介电层， 在半导体岛的第二子集上或之上，以及退火。 第一介电层包含第一掺杂剂，并且（任选的）第二介电层包含不同于第一掺杂剂的第二掺杂剂。 电介质层，半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中，并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。
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公开(公告)号：US07701011B2
公开(公告)日：2010-04-20
申请号：US11888942
申请日：2007-08-03
CPC分类号： H01L27/12 , H01L27/1292 , H01L29/78618
摘要： An electronic device, including a substrate, a plurality of first semiconductor islands on the substrate, a plurality of second semiconductor islands on the substrate, a first dielectric film on the first subset of the semiconductor islands, second dielectric film on the second semiconductor islands, and a metal layer in electrical contact with the first and second semiconductor islands. The first semiconductor islands and the first dielectric film contain a first diffusible dopant, and the second semiconductor islands and the second dielectric layer film contain a second diffusible dopant different from the first diffusible dopant. The present electronic device can be manufactured using printing technologies, thereby enabling high-throughput, low-cost manufacturing of electrical circuits on a wide variety of substrates.
摘要翻译： 一种电子器件，包括衬底，衬底上的多个第一半导体岛，衬底上的多个第二半导体岛，半导体岛的第一子集上的第一电介质膜，第二半导体岛上的第二电介质膜， 以及与第一和第二半导体岛电接触的金属层。 第一半导体岛和第一介电膜包含第一可扩散掺杂剂，第二半导体岛和第二介电层膜含有不同于第一可扩散掺杂剂的第二可扩散掺杂物。 本电子装置可以使用印刷技术制造，从而能够在各种基板上实现高通量，低成本的电路制造。
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公开(公告)号：US08304780B2
公开(公告)日：2012-11-06
申请号：US12797274
申请日：2010-06-09
IPC分类号： H01L29/10 , H01L29/76 , H01L31/036 , H01L31/112
CPC分类号： H01L21/316 , H01L21/02211 , H01L21/02288 , H01L21/02318 , H01L21/3165 , H01L27/1285 , H01L27/1292 , H01L29/66757 , H01L29/78621
摘要： A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.
摘要翻译： 一种用于制造诸如MOS晶体管的电子器件的方法，包括以下步骤：在电功能衬底上形成多个半导体岛，在第一半导体岛子集上或第二子体上印刷第一介电层， 在半导体岛的第二子集上或之上，以及退火。 第一介电层包含第一掺杂剂，并且（任选的）第二介电层包含不同于第一掺杂剂的第二掺杂剂。 电介质层，半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中，并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。
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