Laser irradiation apparatus and method for manufacturing semiconductor device
    41.
    发明授权
    Laser irradiation apparatus and method for manufacturing semiconductor device 有权
    激光照射装置及半导体装置的制造方法

    公开(公告)号:US08222126B2

    公开(公告)日:2012-07-17

    申请号:US12852636

    申请日:2010-08-09

    IPC分类号: H01L21/02

    摘要: It is an object of the present invention to provide a laser irradiation apparatus being able to irradiate the irradiation object with the laser beam having homogeneous energy density without complicating the optical system. The laser irradiation apparatus of the present invention comprises a laser oscillator, an optical system for scanning repeatedly a beam spot of the laser beam emitted from the laser oscillator in a uniaxial direction over the surface of the irradiation object, and a position controlling means for moving the position of the irradiation object relative to the laser beam in a direction perpendicular to the uniaxial direction.

    摘要翻译: 本发明的目的是提供一种激光照射装置,其能够用具有均匀能量密度的激光束照射照射物体,而不会使光学系统复杂化。 本发明的激光照射装置包括激光振荡器,用于在照射物体的表面上沿单轴方向重复扫描从激光振荡器发射的激光束的光点的光学系统,以及用于移动的位置控制装置 照射对象相对于激光束在垂直于单轴方向的方向上的位置。

    Laser irradiation method, laser irradiation apparatus, and method for fabricating semiconductor device
    42.
    发明授权
    Laser irradiation method, laser irradiation apparatus, and method for fabricating semiconductor device 有权
    激光照射方法,激光照射装置以及半导体装置的制造方法

    公开(公告)号:US07812283B2

    公开(公告)日:2010-10-12

    申请号:US10582013

    申请日:2005-03-24

    IPC分类号: B23K26/06 H01L21/84

    摘要: An object of the present invention is to provide a laser irradiation method and a laser irradiation apparatus for irradiating an irradiation surface with a linear beam having more homogeneous intensity by blocking a low-intensity part of the linear beam without forming the fringes due to the diffraction on the irradiation surface. In the laser irradiation, a laser beam emitted from a laser oscillator 101 passes through a slit 102 so as to block a low-intensity part of the laser beam, the traveling direction of the laser beam is bent by a mirror 103, and an image formed at the slit is projected to an irradiation surface 106 by a convex cylindrical lens 104.

    摘要翻译: 本发明的目的是提供一种激光照射方法和激光照射装置,用于通过阻挡线性光束的低强度部分而不会由于衍射而形成条纹而用具有更均匀强度的线性光束照射照射表面 在照射面上。 在激光照射中,从激光振荡器101发射的激光束通过狭缝102,以阻挡激光束的低强度部分,激光束的行进方向被反射镜103弯曲,并且图像 形成在狭缝处的凸起的圆柱形透镜104被投射到照射表面106。

    Laser irradiation apparatus and laser irradiation method
    43.
    发明授权
    Laser irradiation apparatus and laser irradiation method 有权
    激光照射装置和激光照射方法

    公开(公告)号:US07772523B2

    公开(公告)日:2010-08-10

    申请号:US10586048

    申请日:2005-07-28

    IPC分类号: B23K26/08 B23K26/06

    摘要: It is an object of the present invention to provide a laser irradiation apparatus and a laser irradiation method for conducting a laser process homogeneously to the whole surface of a semiconductor film. A first laser beam emitted from a first laser oscillator passes through a slit and a condensing lens and then enters an irradiation surface. At the same time, a second laser beam emitted from a second laser oscillator is delivered so as to overlap the first laser beam on the irradiation surface. Further, the laser beams are scanned relative to the irradiation surface to anneal the irradiation surface homogeneously.

    摘要翻译: 本发明的目的是提供一种激光照射装置和激光照射方法,用于均匀地对半导体膜的整个表面进行激光加工。 从第一激光振荡器发射的第一激光束通过狭缝和聚光透镜,然后进入照射表面。 同时,从第二激光振荡器发射的第二激光束被输送以与照射表面上的第一激光束重叠。 此外,相对于照射表面扫描激光束,以均匀地退火照射表面。

    Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device
    44.
    发明授权
    Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device 有权
    激光照射装置,激光照射方法以及半导体装置的制造方法

    公开(公告)号:US07623292B2

    公开(公告)日:2009-11-24

    申请号:US11898765

    申请日:2007-09-14

    IPC分类号: G02B27/10

    CPC分类号: B23K26/0622 B23K2101/40

    摘要: It is an object of the present invention to provide a laser irradiation apparatus, a laser irradiation method, and a method for manufacturing a semiconductor device using the laser irradiation method that can suppress the energy distribution of the laser beam. The present invention provides a laser irradiation apparatus including a laser oscillator oscillating a pulsed laser beam, a lens assembly having a plurality of optical systems, position control means for controlling the position of the lens assembly to select at least two from the plurality of optical systems in synchronization with oscillations of a plurality of pulses of the pulsed laser beam, wherein the selected plurality of optical systems forms a plurality of pulses with spatial energy distribution inverted or rotated each other.

    摘要翻译: 本发明的目的是提供一种激光照射装置,激光照射方法和使用能抑制激光束的能量分布的激光照射方法的半导体装置的制造方法。 本发明提供了一种激光照射装置,其包括振荡脉冲激光束的激光振荡器,具有多个光学系统的透镜组件,位置控制装置,用于控制透镜组件从多个光学系统中选择至少两个的位置 与脉冲激光束的多个脉冲的振荡同步,其中所选择的多个光学系统形成具有反转或相互旋转的空间能量分布的多个脉冲。

    Semiconductor device and its manufacturing method
    45.
    发明申请
    Semiconductor device and its manufacturing method 有权
    半导体器件及其制造方法

    公开(公告)号:US20090173893A1

    公开(公告)日:2009-07-09

    申请号:US10585128

    申请日:2005-08-12

    摘要: It is an object of the present invention to provide laser irradiation apparatus and method which can decrease the proportion of the microcrystal region in the whole irradiated region and can irradiate a semiconductor film homogeneously with a laser beam. A low-intensity part of a laser beam emitted from a laser oscillator is blocked by a slit, the laser beam is deflected by a mirror, and the beam is shaped into a desired size by using two convex cylindrical lenses. Then, the laser beam is delivered to the irradiation surface.

    摘要翻译: 本发明的目的是提供一种激光照射装置和方法,该激光照射装置和方法可以降低整个照射区域中的微晶区域的比例,并且可以用激光束均匀地照射半导体膜。 从激光振荡器发射的激光束的低强度部分被狭缝阻挡,激光束被反射镜偏转,并且通过使用两个凸柱面透镜将光束成形为期望的尺寸。 然后,激光束被传送到照​​射表面。

    Laser irradiation method and method for manufacturing semiconductor device including an autofocusing mechanism using the same
    46.
    发明授权
    Laser irradiation method and method for manufacturing semiconductor device including an autofocusing mechanism using the same 有权
    激光照射方法及其半导体装置的制造方法,其包括使用该半导体装置的自动聚焦机构

    公开(公告)号:US07547866B2

    公开(公告)日:2009-06-16

    申请号:US11107844

    申请日:2005-04-18

    IPC分类号: G02B7/04

    摘要: The present invention is to provide a laser irradiation method for performing homogeneous laser irradiation to the irradiation object even when the thickness of the irradiation object is not even. In the case of irradiating the irradiation object having uneven thickness, the laser irradiation is performed while keeping the distance between the irradiation object and the lens for condensing the laser beam on the surface of the irradiation object constant by using an autofocusing mechanism. In particular, when the irradiation object is irradiated with the laser beam by moving the irradiation object relative to the laser beam in the first direction and the second direction of the beam spot formed on the irradiation surface, the distance between the irradiation object and the lens is controlled by the autofocusing mechanism before the irradiation object is moved in the first and second directions.

    摘要翻译: 本发明提供一种激光照射方法,即使在照射物体的厚度不均匀的情况下也能够对照射物进行均匀的激光照射。 在照射具有不均匀厚度的照射物体的情况下,通过使用自动聚焦机构,在照射物体和透镜之间的距离保持在照射物体的表面上恒定的同时,进行激光照射。 特别地,当通过在照射表面上形成的第一方向和束点的第二方向上相对于激光束照射被照射物体照射激光束时,照射物体与透镜之间的距离 在照射对象沿第一和第二方向移动之前由自动对焦机构控制。

    Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device
    48.
    发明授权
    Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device 有权
    激光照射装置,激光照射方法以及半导体装置的制造方法

    公开(公告)号:US07450307B2

    公开(公告)日:2008-11-11

    申请号:US10915438

    申请日:2004-08-11

    IPC分类号: G02B27/10

    CPC分类号: B23K26/0622 B23K2101/40

    摘要: It is an object of the present invention to provide a laser irradiation apparatus, a laser irradiation method, and a method for manufacturing a semiconductor device using the laser irradiation method that can suppress the energy distribution of the laser beam. The present invention provides a laser irradiation apparatus including a laser oscillator oscillating a pulsed laser beam, a lens assembly having a plurality of optical systems, position control means for controlling the position of the lens assembly to select at least two from the plurality of optical systems in synchronization with oscillations of a plurality of pulses of the pulsed laser beam, wherein the selected plurality of optical systems forms a plurality of pulses with spatial energy distribution inverted or rotated.

    摘要翻译: 本发明的目的是提供一种激光照射装置,激光照射方法和使用能抑制激光束的能量分布的激光照射方法的半导体装置的制造方法。 本发明提供了一种激光照射装置,其包括振荡脉冲激光束的激光振荡器,具有多个光学系统的透镜组件,位置控制装置,用于控制透镜组件从多个光学系统中选择至少两个的位置 与脉冲激光束的多个脉冲的振荡同步,其中所选择的多个光学系统形成具有倒置或旋转的空间能量分布的多个脉冲。

    Laser irradiation apparatus and laser irradiation method
    50.
    发明申请
    Laser irradiation apparatus and laser irradiation method 有权
    激光照射装置和激光照射方法

    公开(公告)号:US20070148834A1

    公开(公告)日:2007-06-28

    申请号:US10584472

    申请日:2005-06-15

    摘要: It is an object of the present invention to provide a laser irradiation apparatus which can manufacture a homogenously crystallized film by varying the energy intensity of an irradiation beam in forward and backward directions of the irradiation. A laser irradiation apparatus of the present invention comprises a laser oscillator and means for varying beam intensity wherein a laser beam is obliquely incident into the irradiation surface, the laser beam is scanned relative to the irradiation surface, and the beam intensity is varied in accordance with the scanning direction. Further, the laser oscillator is a continuous wave solid-state laser, gas laser, or metal laser. A pulsed laser having a repetition frequency of 10 MHz or more can also be used.

    摘要翻译: 本发明的目的是提供一种能够通过改变照射光束在照射的前后方向上的能量强度来制造均质结晶膜的激光照射装置。 本发明的激光照射装置包括激光振荡器和用于改变光束强度的装置,其中激光束倾斜地入射到照射表面中,激光束相对于照射表面被扫描,并且光束强度根据 扫描方向。 此外,激光振荡器是连续波固体激光器,气体激光器或金属激光器。 也可以使用重复频率为10MHz以上的脉冲激光。