摘要:
A technique capable of reducing threshold voltage and reducing high-temperature heat treatment after forming a gate electrode is provided. An n-type MIS transistor or a p-type MIS transistor is formed on an active region isolated by an element isolation region of a semiconductor substrate. In the n-type MIS transistor, a gate electrode is formed through a gate insulating film, and the gate electrode is composed of a hafnium silicide film. On the other hand, in the p-type MIS transistor, a gate electrode is formed through a gate insulating film, and the gate electrode is composed of a platinum silicide film. Also, the gate electrodes are formed after the activation annealing (heat treatment) for activating impurities implanted into a source region and a drain region.
摘要:
A state switching method includes the steps of: receiving a state switching instruction signal for instructing a local terminal to switch to at least one of two or more states; determining whether to switch the local terminal to the state specified by the above-mentioned state switching instruction signal on the basis of a user setting stored in a memory of the local terminal; and carrying out a control operation of switching the local terminal to the state specified by the above-mentioned state switching instruction signal when, in the above-mentioned determining step, it is determined that the switching of the local terminal to the state specified by the above-mentioned state switching instruction signal will be carried out.
摘要:
In an aging process in which a voltage having an alternate voltage component is applied to at least between a scan electrode and a sustain electrode so as to form a discharge dent (sputter dent) on a protecting layer, the aging discharge dent is formed so as to satisfy any one of the following. First, the discharge dent on the scan electrode-side has a width which is narrower than the discharge dent on the side of sustain electrode. Second, the discharge dent on the side of sustain electrode is formed so that the depth of the discharge dent in the area away from a scan electrode paired with a sustain electrode as a display electrode is shallower than the depth of the discharge dent in the area close to counterpart scan electrode.
摘要:
A plasma display panel is provided that includes scan electrodes, sustain electrodes, and address electrodes. A first pulse voltage for the address electrodes or a second pulse voltage for the address electrodes is applied to the address electrodes in an aging step in which aging discharge is performed by alternately applying pulse voltage for the scan electrodes and pulse voltage for the sustain electrodes at least across the scan electrodes and the sustain electrodes. The first pulse voltage has a rising edge timing synchronized with a rising edge timing of the pulse voltage for the scan electrodes and a pulse width smaller than that of the pulse voltage for the scan electrodes. The second pulse voltage has a rising edge timing synchronized with a rising edge timing of the pulse voltage for the sustain electrodes and a pulse width smaller than that of the pulse voltage for the sustain electrodes.
摘要:
In conventional methods of correction luminance in displays, it has been necessary to interrupt video display during use in order to carry out correction. This is a problem in that interruptions are not good for workability from the perspective of the user of the image display device. In consideration of this, the present invention realizes a display without non-uniformity in illumination with respect to both initial characteristics and change over time by measuring anode current of an FED and creating a luminance correction memory. In addition, by illuminating arbitrary pixels during video idle periods, capturing the luminance information from the pixels, and renewing a correction memory based on this luminance information, correction for change over time is possible without interrupting video display. Thus, a display device that can maintain high quality images is provided.
摘要:
An aging method and an aging device are provided by which a plasma display panel that reduces the generation of irregular color and that has a high display quality can be obtained. An aging method and an aging apparatus for plasma display panels are disclosed which enable to obtain a plasma display panel with high display quality wherein color irregularities are suppressed. The aging apparatus for plasma display panels comprises a plurality of fans. When air is blown to a plasma display panel using the fans during aging of the plasma display panel, at least the direction or the amount of air blow by at least one of the fans is changed so that the temperatures of image display regions in the plasma display panel can be uniform, thereby suppressing color irregularities.
摘要:
To provide a method for the formation of oxide films to form with advantage a high-quality oxide film having excellent uniformity in film thickness and film quality over the entire wafer. The method for the formation of oxide films comprises: the pretreatment process of forming a protective oxide film on the surface of a wafer positioned in a reaction vessel by performing oxidation treatment with radical oxidative species or an atmosphere containing radical oxidative species under depressurized conditions; and the oxide-film-formation process of forming an oxide film on the wafer by performing oxidation treatment at a predetermined temperature under depressurized conditions. The oxide-film-formation process is preferably performed following the pretreatment process in a continuous manner in the reaction vessel in which the pretreatment process is performed. The pretreatment process is preferably performed at a temperature lower than the temperature for the oxide-film-formation process and also preferably performed under depressurized conditions, the level of the depressurization being higher than the level for the oxide-film-formation process. A high-quality gate-insulating film for a transistor chip can be formed according to this method for the formation of oxide films.
摘要:
Disclosed are an electron-emitting element having a large operating current at a low operating voltage and excellent operation stability, and an electron source, an image display device and the like utilizing such an electron-emitting element, and further a method of fabricating such an element with few process steps at low cost. A cold cathode member is configured utilizing hybrid particle of a first particle serving to emit electrons into the space and a second particle being in the vicinity of the first particle and serving to control the position of the first particle. In this configuration, it is preferable that the first particle have a higher electron emission efficiency than the second particle and that the second particle be conductive.
摘要:
A toner for electrostatic image development comprising a high-softening point polyester having a softening point of 120° C. or more and 170° C. or less; a low-softening point polyester having a softening point of 80° C. or more and less than 120° C.; and a composite oxide of two or more metals, wherein the composite oxide has a BET specific surface area of 7 m2/g or more. The toner is suitably used for the development of a latent image formed in electrophotography, electrostatic recording method, electrostatic printing method or the like.
摘要:
The present invention describes a process for preparing a toner mixture comprising mixing a first toner with at least one further toner wherein the first toner has an acid value of from 0.1 to 30 mgKOH/g and comprises at least one binder resin and at least one coloring agent wherein said binder comprises as the main component a polyester resin and wherein the further toners comprise at least a binder resin and optionally at least one coloring agent. It also describes a developer composition comprising said toner mixture and optionally a carrier. The new toner mixture does not show any de-mixing phenomenon during repeated use.