Abstract:
A display device and a method for manufacturing the same capable of preventing a defective drive of a gate-in-panel (GIP) driver by dissipating high heat generated in a large-sized thin film transistor of the GIP driver are disclosed. The display device includes a flexible substrate, a GIP driver and a display unit disposed on the flexible substrate, a protective member disposed under the flexible substrate, and a heat pad disposed between the flexible substrate and the protective member and overlapping the GIP driver.
Abstract:
Provided are a flexible thin film transistor substrate and a flexible organic light emitting display device. The flexible thin film transistor substrate includes: a flexible substrate including at least one thin film transistor (TFT) area and having flexibility, an active layer disposed in the TFT area on the flexible substrate, a gate insulation layer disposed on the active layer, a gate electrode overlapping with the active layer on the gate insulation layer, an insulating interlayer disposed on the gate electrode, and a source electrode and a drain electrode disposed on the insulating interlayer and connected with the active layer, respectively. The gate insulation layer or the insulating interlayer includes at least one hole pattern configured to reduce bending stress.
Abstract:
A conductive trace design is described that minimizes the possibility of crack initiation and propagation in conductive traces during bending. The conductive trace design has a winding trace pattern that is more resistant to the formation of cracks at high stress points in the conductive traces. The conductive trace design includes a cap that helps ensure electrical connection of the conductive trace even though one or more cracks may begin to form in the conductive portion of the conductive trace.
Abstract:
There is provided a flexible display having a plurality of innovations configured to allow bending of a portion or portions to reduce apparent border size and/or utilize the side surface of an assembled flexible display.
Abstract:
There is provided a flexible display having a plurality of innovations configured to allow bending of a portion or portions to reduce apparent border size and/or utilize the side surface of an assembled flexible display.
Abstract:
A thin film transistor, a method of manufacturing the thin film transistor, and a display device including the thin film transistor are provided. The thin film transistor comprises a gate electrode formed on the oxide semiconductor layer such that a first surface of the oxide semiconductor layer faces the gate electrode. A source electrode and a drain electrode are electrically connected to the oxide semiconductor layer, respectively. The oxide semiconductor layer, gate electrode, source electrode and drain electrode are arranged in a coplanar transistor configuration. A light-blocking element is also arranged to shield a second surface of the oxide semiconductor layer from external light.
Abstract:
A flexible display substrate, a flexible organic light emitting display device, and a method of manufacturing the same are provided. The flexible display substrate comprises a flexible substrate including a display area and a non-display area extending from the display area, and a wire formed on the flexible substrate. At least a part of the non-display area of the flexible substrate is formed in a crooked shape in a bending direction, and the wire positioned on at least a part of the non-display area of the flexible substrate includes a plurality of first wire patterns, and a second wire pattern formed on the plurality of first wire patterns and electrically connected with the plurality of first wire patterns.
Abstract:
A thin film transistor, a method of manufacturing the thin film transistor, and a display device including the thin film transistor are provided. The thin film transistor comprises an oxide semiconductor layer, a gate electrode, a source electrode and a drain electrode formed on a substrate in a coplanar configuration. A first conductive member is in direct contact with the oxide semiconductor layer and in direct contact with the source electrode. A second conductive member is in direct contact with the oxide semiconductor layer and in direct contact with the drain electrode. The first conductive member and the second conductive member are arranged to decrease resistance between a channel region of the oxide semiconductor layer and the source and drain electrodes.
Abstract:
There is provided a flexible display having a plurality of innovations configured to allow bending of a portion or portions to reduce apparent border size and/or utilize the side surface of an assembled flexible display.
Abstract:
Provided is a configuration for a semiconductor layer and a line for reducing the segment length of the semiconductor layer with respect to the bending direction of the flexible substrate. Such a configuration reduces the probability of cracks occurring in the semiconductor layer of the thin-film transistor, thereby improving the stability and durability of the thin-film transistor employed in a curved or a flexible display device. The configuration includes a thin-film transistor (TF) on the flexible substrate. The TFT includes the semiconductor layer extending obliquely with respect to the direction of the line.