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    Method And System For Optoelectronics Transceivers Integrated On A CMOS Chip
    41.
    发明申请
    Method And System For Optoelectronics Transceivers Integrated On A CMOS Chip 审中-公开

    公开(公告)号：US20180323873A1

    公开(公告)日：2018-11-08

    申请号：US15804680

    申请日：2017-11-06

    Applicant: Luxtera, Inc.

    Inventor： Thierry Pinguet ,  Steffen Gloeckner ,  Sherif Abdalla ,  Sina Mirsaidi ,  Peter De Dobbelaere

    IPC: H04B10/25 ,  G02B6/43 ,  G02B6/122 ,  G02B6/124

    CPC classification number: H04B10/25 ,  G02B6/1228 ,  G02B6/124 ,  G02B6/4214 ,  G02B6/43

    Abstract: Methods and systems for optoelectronics transceivers integrated on a CMOS chip are disclosed and may include receiving optical signals from optical fibers via grating couplers on a top surface of a CMOS chip, which may include a guard ring. Photodetectors may be integrated in the CMOS chip. A CW optical signal may be received from a laser source via optical couplers, and may be modulated using optical modulators, which may be Mach-Zehnder and/or ring modulators. Circuitry in the CMOS chip may drive the optical modulators. The modulated optical signal may be communicated out of the top surface of the CMOS chip into optical fibers via grating couplers. The received optical signals may be communicated between devices via waveguides. The photodetectors may include germanium waveguide photodiodes, avalanche photodiodes, and/or heterojunction diodes. The CW optical signal may be generated using an edge-emitting and/or a vertical-cavity surface emitting semiconductor laser.

    Method And System For A Low Parasitic Silicon High-Speed Phase Modulator
    42.
    发明申请
    Method And System For A Low Parasitic Silicon High-Speed Phase Modulator 审中-公开

    公开(公告)号：US20180321521A1

    公开(公告)日：2018-11-08

    申请号：US16036409

    申请日：2018-07-16

    Applicant: Luxtera, Inc.

    Inventor： Ali Ayazi ,  Gianlorenzo Masini ,  Subal Sahni ,  Attila Mekis ,  Thierry Pinguet

    IPC: G02F1/025 ,  G02F1/225

    CPC classification number: G02F1/025 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2201/06 ,  G02F2202/105

    Abstract: Methods and systems for a low-parasitic silicon high-speed phase modulator are disclosed and may include fabricating an optical phase modulator that comprises a PN junction waveguide formed in a silicon layer, wherein the silicon layer may be on an oxide layer and the oxide layer may be on a silicon substrate. The PN junction waveguide may have p-doped and n-doped regions on opposite sides along a length of the PN junction waveguide, and portions of the p-doped and n-doped regions may be removed. Contacts may be formed on remaining portions of the p-doped and n-doped regions. Portions of the p-doped and n-doped regions may be removed symmetrically about the PN junction waveguide. Portions of the p-doped and n-doped regions may be removed in a staggered fashion along the length of the PN junction waveguide. Etch transition features may be removed along the p-doped and n-doped regions.

    COUPLING OPTICAL SIGNALS INTO SILICON OPTOELECTRONIC CHIPS
    47.
    发明申请
    COUPLING OPTICAL SIGNALS INTO SILICON OPTOELECTRONIC CHIPS 有权
    将光信号耦合到硅光电子芯片中

    公开(公告)号：US20160187581A1

    公开(公告)日：2016-06-30

    申请号：US14829260

    申请日：2015-08-18

    Applicant: Luxtera, Inc.

    Inventor： Thierry Pinguet ,  Attila Mekis ,  Steffen Gloeckner

    IPC: G02B6/124 ,  G02B6/42 ,  G02B6/30

    CPC classification number: G02B6/124 ,  G01J1/02 ,  G01J1/0425 ,  G02B6/12004 ,  G02B6/30 ,  G02B6/34 ,  G02B6/4208 ,  G02B2006/12038 ,  G02B2006/12061 ,  G02B2006/12104 ,  G02B2006/12157

    Abstract: A method and system for coupling optical signals into silicon optoelectronic chips are disclosed and may include coupling one or more optical signals into a back surface of a silicon photonic chip through a light path in a region where silicon is removed from said silicon photonic chip, wherein photonic devices may be integrated in layers on a front surface of the silicon photonic chip. Optical couplers, such as grating couplers, may receive the optical signals in the front surface. The optical signals may be coupled into the back surface of the chips via optical fibers and/or optical source assemblies. The region where silicon may be removed from said silicon photonic chip may comprise silicon dioxide. The chip may be bonded to a second chip. Optical signals may be reflected back to the optical couplers via metal reflectors, which may be integrated in dielectric layers on the chips.

    Abstract translation: 公开了一种用于将光信号耦合到硅光电芯片的方法和系统，并且可以包括通过在从硅光子芯片去除硅的区域中的光路将一个或多个光信号耦合到硅光子芯片的背表面中，其中 光子器件可以集成在硅光子芯片的前表面上的层中。 诸如光栅耦合器的光耦合器可以在前表面中接收光信号。 光信号可以经由光纤和/或光源组件耦合到芯片的后表面中。 硅可以从硅光子芯片去除的区域可以包括二氧化硅。 芯片可以结合到第二芯片。 光信号可以经由金属反射器反射回到光耦合器，金属反射器可以集成在芯片上的电介质层中。

    Method And System For Monolithic Integration of Photonics And Electronics In CMOS Processes
    48.
    发明申请
    Method And System For Monolithic Integration of Photonics And Electronics In CMOS Processes 审中-公开
    CMOS工艺中光子学与电子学的一体化方法与系统

    公开(公告)号：US20150270898A1

    公开(公告)日：2015-09-24

    申请号：US14729826

    申请日：2015-06-03

    Applicant: Luxtera, Inc.

    Inventor： Attila Mekis ,  Peter De Dobbelaere ,  Kosei Yokoyama ,  Sherif Abdalla ,  Steffen Gloeckner ,  John Guckenberger ,  Thierry Pinguet ,  Gianlorenzo Masini

    IPC: H04B10/2575 ,  H04B10/40

    CPC classification number: H04B10/2575 ,  H01L21/84 ,  H01L27/1203 ,  H04B10/40

    Abstract: Methods and systems for monolithic integration of photonics and electronics in CMOS processes are disclosed and may include in an optoelectronic transceiver comprising photonic and electronic devices from two complementary metal-oxide semiconductor (CMOS) die with different silicon layer thicknesses for the photonic and electronic devices, the CMOS die bonded together by metal contacts: communicating optical signals and electronic signals to and from said optoelectronic transceiver utilizing a received continuous wave optical signal as a source signal. A first of the CMOS die includes the photonic devices and a second includes the electronic devices. Electrical signals may be communicated between electrical devices to the optical devices utilizing through-silicon vias coupled to the metal contacts. The metal contacts may include back-end metals from a CMOS process. The electronic and photonic devices may be fabricated on SOI wafers, with the SOI wafers being diced to form the CMOS die.

    Abstract translation: 公开了用于在CMOS工艺中单片集成光子学和电子学的方法和系统，并且可以包括在包含来自具有用于光子和电子器件的不同硅层厚度的两个互补金属氧化物半导体（CMOS）裸片的光子和电子器件的光电收发器中， 通过金属触点接合在一起的CMOS芯片：利用接收的连续波光信号作为源信号将光信号和电子信号传送到所述光电收发器和从所述光电收发器传送。 第一个CMOS管芯包括光子器件，第二个包括电子器件。 电信号可以通过耦合到金属触点的通硅通孔在电子器件之间传送到光学器件。 金属触点可以包括来自CMOS工艺的后端金属。 电子和光子器件可以制造在SOI晶片上，SOI晶片被切割以形成CMOS管芯。

    Integrated transceiver with lightpipe coupler
    49.
    再颁专利
    Integrated transceiver with lightpipe coupler 有权
    集成收发器与光管耦合器

    公开(公告)号：USRE45215E1

    公开(公告)日：2014-10-28

    申请号：US13773300

    申请日：2013-02-21

    Applicant: Luxtera, Inc.

    Inventor： Peter De Dobbelaere ,  Thierry Pinguet ,  Mark Peterson ,  Mark Harrison ,  Alexander G. Dickinson ,  Lawrence C. Gunn, III

    IPC: G02B6/12 ,  G02B6/26 ,  H05K1/18

    CPC classification number: H04B10/40 ,  G02B6/12004 ,  G02B6/3885 ,  G02B6/4214 ,  G02B6/4246 ,  G02B6/4295 ,  G02B2006/12121

    Abstract: A transceiver comprising a plurality of CMOS chips may be operable to communicate an optical source signal from a semiconductor laser into a first CMOS chip via optical couplers. The optical source signal may be used to generate first optical signals that are transmitted from the first CMOS chip to optical fibers coupled to the first CMOS chip via one or more optical couplers. Second optical signals may be received from the optical fibers and converted to electrical signals via photodetectors in the first CMOS chip. The optical source signal may be communicated from the semiconductor laser into the first CMOS chip via optical fibers in to a top surface and the first optical signals may be communicated out of a top surface of the first CMOS chip. The electrical signals may be communicated to at least a second of the plurality of CMOS chips comprising electronic devices.

    Abstract translation: 包括多个CMOS芯片的收发器可以用于通过光耦合器将来自半导体激光器的光源信号传送到第一CMOS芯片。 光源信号可以用于产生经由一个或多个光耦合器从第一CMOS芯片传输到耦合到第一CMOS芯片的光纤的第一光信号。 可以从光纤接收第二光信号并且经由第一CMOS芯片中的光电探测器转换成电信号。 光源信号可以通过光纤从半导体激光器传送到第一CMOS芯片到顶表面，并且第一光信号可以从第一CMOS芯片的顶表面传出。 电信号可以传送到包括电子设备的多个CMOS芯片中的至少一个。

    Method and system for coupling optical signals into silicon optoelectronic chips
    50.
    发明授权
    Method and system for coupling optical signals into silicon optoelectronic chips 有权
    将光信号耦合到硅光电芯片的方法和系统

    公开(公告)号：US08861906B2

    公开(公告)日：2014-10-14

    申请号：US13873771

    申请日：2013-04-30

    Applicant: Luxtera, Inc.

    Inventor： Thierry Pinguet ,  Attila Mekis ,  Steffen Gloeckner

    IPC: G02B6/34 ,  G01J1/02 ,  G02B6/30 ,  G02B6/124

    CPC classification number: G02B6/124 ,  G01J1/02 ,  G01J1/0425 ,  G02B6/12004 ,  G02B6/30 ,  G02B6/34 ,  G02B6/4208 ,  G02B2006/12038 ,  G02B2006/12061 ,  G02B2006/12104 ,  G02B2006/12157

    Abstract: A method and system for coupling optical signals into silicon optoelectronic chips are disclosed and may include coupling one or more optical signals into a back surface of a CMOS photonic chip in a photonic transceiver, wherein photonic, electronic, or optoelectronic devices may be integrated in a front surface of the CMOS photonic chip. Optical couplers, such as grating couplers, may receive the optical signals in the front surface of the chip. The optical signals may be coupled into the back surface of the chips via optical fibers and/or optical source assemblies. The optical signals may be coupled to the optical couplers via a light path etched in the chips, which may be refilled with silicon dioxide. The chips may be flip-chip bonded to a packaging substrate. Optical signals may be reflected back to the optical couplers via metal reflectors, which may be integrated in dielectric layers on the chips.

    Abstract translation: 公开了一种用于将光信号耦合到硅光电芯片的方法和系统，并且可以包括将一个或多个光信号耦合到光子收发器中的CMOS光子芯片的背表面，其中光子，电子或光电器件可以集成在 CMOS光子芯片的前表面。 诸如光栅耦合器的光耦合器可以接收芯片前表面中的光信号。 光信号可以经由光纤和/或光源组件耦合到芯片的后表面中。 光信号可以经由在芯片中蚀刻的光路耦合到光耦合器，其可以用二氧化硅再填充。 芯片可以倒装芯片结合到封装基板。 光信号可以经由金属反射器反射回到光耦合器，金属反射器可以集成在芯片上的电介质层中。

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