公开(公告)号：US20150325645A1

公开(公告)日：2015-11-12

申请号：US14803662

申请日：2015-07-20

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Song Guo ,  Yushi Hu ,  Roy Meade ,  Sanh D. Tang ,  Michael P. Violette ,  David H. Wells

IPC: H01L29/06

CPC classification number: H01L29/0649 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/76224 ,  H01L21/76283 ,  H01L21/76286 ,  H01L29/04 ,  H01L29/32

Abstract: Disclosed are methods and resulting structures which provide an opening for epitaxial growth, the opening having an associated projection for reducing the size of the contact area on a substrate at which growth begins. During growth, the epitaxial material grows vertically from the contact area and laterally over the projection. The projection provides a stress relaxation region for the lateral growth to reduce dislocation and stacking faults at the side edges of the grown epitaxial material.

公开(公告)号：US09123891B2

公开(公告)日：2015-09-01

申请号：US14530935

申请日：2014-11-03

Applicant: Micron Technology, Inc.

Inventor： Jun Liu ,  Michael P. Violette

IPC: H01L45/00 ,  G11C13/00 ,  H01L27/24

CPC classification number: H01L45/1675 ,  G11C13/0014 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148

Abstract: A variable-resistance material memory (VRMM) device includes a container conductor disposed over an epitaxial semiconductive prominence that is coupled to a VRMM. A VRMM device may also include a conductive plug in a recess that is coupled to a VRMM. A VRMM array may also include a conductive plug in a surrounding recess that is coupled to a VRMM. Apparatuses include the VRMM with one of the diode constructions.

Abstract translation: 可变电阻材料存储器（VRMM）装置包括设置在耦合到VRMM的外延半导体突起上的容器导体。 VRMM装置还可以包括耦合到VRMM的凹部中的导电插头。 VRMM阵列还可以包括耦合到VRMM的周围凹部中的导电插头。 装置包括具有二极管结构之一的VRMM。

公开(公告)号：US09099309B2

公开(公告)日：2015-08-04

申请号：US14056026

申请日：2013-10-17

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Song Guo ,  Yushi Hu ,  Roy Meade ,  Sanh D. Tang ,  Michael P. Violette ,  David H. Wells

IPC: H01L21/76 ,  H01L21/02 ,  H01L29/04 ,  H01L29/06 ,  H01L21/762

CPC classification number: H01L29/0649 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/76224 ,  H01L21/76283 ,  H01L21/76286 ,  H01L29/04 ,  H01L29/32

Abstract: Disclosed are methods and resulting structures which provide an opening for epitaxial growth, the opening having an associated projection for reducing the size of the contact area on a substrate at which growth begins. During growth, the epitaxial material grows vertically from the contact area and laterally over the projection. The projection provides a stress relaxation region for the lateral growth to reduce dislocation and stacking faults at the side edges of the grown epitaxial material.

Abstract translation: 公开了提供用于外延生长的开口的方法和所得结构，该开口具有用于减小生长开始的基底上的接触面积的尺寸的相关联的突起。 在生长过程中，外延材料从接触区域垂直生长并横向突出。 突起为横向生长提供应力松弛区域，以减少生长的外延材料的侧边缘处的位错和堆垛层错。

公开(公告)号：US20150179931A1

公开(公告)日：2015-06-25

申请号：US14617377

申请日：2015-02-09

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Jun Liu ,  Michael P. Violette

IPC: H01L45/00

CPC classification number: H01L45/1253 ,  G11C13/0004 ,  G11C13/0023 ,  G11C13/0026 ,  G11C13/003 ,  G11C2213/72 ,  G11C2213/74 ,  G11C2213/76 ,  G11C2213/78 ,  G11C2213/79 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144

Abstract: A resistive memory structure, for example, phase change memory structure, includes one access device and two or more resistive memory cells. Each memory cell is coupled to a rectifying device to prevent parallel leak current from flowing through non-selected memory cells. In an array of resistive memory bit structures, resistive memory cells from different memory bit structures are stacked and share rectifying devices.

Abstract translation: 电阻式存储器结构，例如相变存储器结构，包括一个存取器件和两个或更多个电阻存储器单元。 每个存储单元耦合到整流装置，以防止并行漏电流流过未选择的存储单元。 在电阻存储器位结构的阵列中，来自不同存储器位结构的电阻存储器单元被堆叠并共享整流器件。

公开(公告)号：US20150108600A1

公开(公告)日：2015-04-23

申请号：US14056026

申请日：2013-10-17

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Song Guo ,  Yushi Hu ,  Roy Meade ,  Sanh D. Tang ,  Michael P. Violette ,  David H. Wells

IPC: H01L21/02 ,  H01L29/06 ,  H01L21/762 ,  H01L29/04

CPC classification number: H01L29/0649 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/76224 ,  H01L21/76283 ,  H01L21/76286 ,  H01L29/04 ,  H01L29/32

Abstract: Disclosed are methods and resulting structures which provide an opening for epitaxial growth, the opening having an associated projection for reducing the size of the contact area on a substrate at which growth begins. During growth, the epitaxial material grows vertically from the contact area and laterally over the projection. The projection provides a stress relaxation region for the lateral growth to reduce dislocation and stacking faults at the side edges of the grown epitaxial material.

Abstract translation: 公开了提供用于外延生长的开口的方法和所得结构，该开口具有用于减小生长开始的基底上的接触面积的尺寸的相关联的突起。 在生长过程中，外延材料从接触区域垂直生长并横向突出。 突起为横向生长提供应力松弛区域，以减少生长的外延材料的侧边缘处的位错和堆垛层错。