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    Memory Cells and Methods of Forming Memory Cells
    42.
    发明申请
    Memory Cells and Methods of Forming Memory Cells 审中-公开
    记忆细胞和形成记忆细胞的方法

    公开(公告)号：US20170040534A1

    公开(公告)日：2017-02-09

    申请号：US15334186

    申请日：2016-10-25

    Applicant: Micron Technology, Inc.

    Inventor： Shuichiro Yasuda ,  Noel Rocklein ,  Scott E. Sills ,  Durai Vishak Nirmal Ramaswamy ,  Qian Tao

    IPC: H01L45/00

    CPC classification number: H01L45/1616 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147

    Abstract: Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode. A second portion of the switching region is formed over the first portion using atomic layer deposition. The second portion is a different composition than the first portion. An ion source region is formed over the switching region. A second electrode is formed over the ion source region. Some embodiments include a memory cell having a switching region between a pair of electrodes. The switching region is configured to be reversibly transitioned between a low resistive state and a high resistive state. The switching region includes two or more discrete portions, with one of the portions not having a non-oxygen component in common with any composition directly against it in the high resistive state.

    Abstract translation: 一些实施例包括形成存储器单元的方法。 开关区域的第一部分形成在第一电极上。 使用原子层沉积在第一部分上形成开关区域的第二部分。 第二部分是与第一部分不同的组成。 在开关区域上形成离子源区。 在离子源区域上形成第二电极。 一些实施例包括具有在一对电极之间的切换区域的存储单元。 开关区域被配置为在低电阻状态和高电阻状态之间可逆地转变。 开关区域包括两个或更多个离散部分，其中一个部分不具有与在高电阻状态下直接抵抗它的任何组成成分相同的非氧分量。

    Memory Cells
    43.
    发明申请
    Memory Cells 有权
    记忆细胞

    公开(公告)号：US20160240545A1

    公开(公告)日：2016-08-18

    申请号：US15064988

    申请日：2016-03-09

    Applicant: Micron Technology, Inc.

    Inventor： Kamal M. Karda ,  Qian Tao ,  Durai Vishak Nirmal Ramaswamy ,  Haitao Liu ,  Kirk D. Prall ,  Ashonita A. Chavan

    IPC: H01L27/115

    CPC classification number: H01L27/11502 ,  H01G4/08 ,  H01L27/10805 ,  H01L27/10852 ,  H01L27/11507 ,  H01L28/40 ,  H01L28/75

    Abstract: A memory cell includes a select device and a capacitor electrically coupled in series with the select device. The capacitor includes two conductive capacitor electrodes having ferroelectric material there-between. The capacitor has an intrinsic current leakage path from one of the capacitor electrodes to the other through the ferroelectric material. There is a parallel current leakage path from the one capacitor electrode to the other. The parallel current leakage path is circuit-parallel the intrinsic path and of lower total resistance than the intrinsic path. Other aspects are disclosed.

    Abstract translation: 存储单元包括与选择装置串联电耦合的选择装置和电容器。 该电容器包括两个导电电容器电极，其间具有铁电材料。 该电容器具有从电容器电极中的一个通过铁电材料到另一个的本征电流泄漏路径。 存在从一个电容器电极到另一个电容器电极的平行电流泄漏路径。 并联电流泄漏路径与固有路径电路并联，总内阻小于固有路径。 公开其他方面。

    Memory Cells and Methods of Forming Memory Cells
    45.
    发明申请
    Memory Cells and Methods of Forming Memory Cells 有权
    记忆细胞和形成记忆细胞的方法

    公开(公告)号：US20150140776A1

    公开(公告)日：2015-05-21

    申请号：US14584504

    申请日：2014-12-29

    Applicant: Micron Technology, Inc.

    Inventor： Shuichiro Yasuda ,  Noel Rocklein ,  Scott E. Sills ,  Durai Vishal Nirmal Ramaswamy ,  Qian Tao

    IPC: H01L45/00

    CPC classification number: H01L45/1616 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147

    Abstract: Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode. A second portion of the switching region is formed over the first portion using atomic layer deposition. The second portion is a different composition than the first portion. An ion source region is formed over the switching region. A second electrode is formed over the ion source region. Some embodiments include a memory cell having a switching region between a pair of electrodes. The switching region is configured to be reversibly transitioned between a low resistive state and a high resistive state. The switching region includes two or more discrete portions, with one of the portions not having a non-oxygen component in common with any composition directly against it in the high resistive state.

    Abstract translation: 一些实施例包括形成存储器单元的方法。 开关区域的第一部分形成在第一电极上。 使用原子层沉积在第一部分上形成开关区域的第二部分。 第二部分是与第一部分不同的组成。 在开关区域上形成离子源区。 在离子源区域上形成第二电极。 一些实施例包括具有在一对电极之间的切换区域的存储单元。 开关区域被配置为在低电阻状态和高电阻状态之间可逆地转变。 开关区域包括两个或更多个离散部分，其中一个部分不具有与在高电阻状态下直接抵抗它的任何组成成分相同的非氧分量。

    Memory cells
    46.
    发明授权
    Memory cells 有权
    记忆单元

    公开(公告)号：US08921821B2

    公开(公告)日：2014-12-30

    申请号：US13738201

    申请日：2013-01-10

    Applicant: Micron Technology, Inc.

    Inventor： Shuichiro Yasuda ,  Noel Rocklein ,  Scott E. Sills ,  D. V. Nirmal Ramaswamy ,  Qian Tao

    IPC: H01L29/00 ,  H01L29/02 ,  H01L21/20 ,  G11C11/00 ,  G11C11/15 ,  H01L45/00

    CPC classification number: H01L45/1616 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147

    Abstract: Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode. A second portion of the switching region is formed over the first portion using atomic layer deposition. The second portion is a different composition than the first portion. An ion source region is formed over the switching region. A second electrode is formed over the ion source region. Some embodiments include a memory cell having a switching region between a pair of electrodes. The switching region is configured to be reversibly transitioned between a low resistive state and a high resistive state. The switching region includes two or more discrete portions, with one of the portions not having a non-oxygen component in common with any composition directly against it in the high resistive state.

    Abstract translation: 一些实施例包括形成存储器单元的方法。 开关区域的第一部分形成在第一电极上。 使用原子层沉积在第一部分上形成开关区域的第二部分。 第二部分是与第一部分不同的组成。 在开关区域上形成离子源区。 在离子源区域上形成第二电极。 一些实施例包括具有在一对电极之间的切换区域的存储单元。 开关区域被配置为在低电阻状态和高电阻状态之间可逆地转变。 开关区域包括两个或更多个离散部分，其中一个部分不具有与在高电阻状态下直接抵抗它的任何组成成分相同的非氧分量。

    Memory Cells
    47.
    发明申请
    Memory Cells 有权
    记忆细胞

    公开(公告)号：US20140191182A1

    公开(公告)日：2014-07-10

    申请号：US13738201

    申请日：2013-01-10

    Applicant: MICRON TECHNOLOGY, INC.

    Inventor： Shuichiro Yasuda ,  Noel Rocklein ,  Scott E. Sills ,  D.V. Nirmal Ramaswamy ,  Qian Tao

    IPC: H01L45/00

    CPC classification number: H01L45/1616 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147

    Abstract: Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode. A second portion of the switching region is formed over the first portion using atomic layer deposition. The second portion is a different composition than the first portion. An ion source region is formed over the switching region. A second electrode is formed over the ion source region. Some embodiments include a memory cell having a switching region between a pair of electrodes. The switching region is configured to be reversibly transitioned between a low resistive state and a high resistive state. The switching region includes two or more discrete portions, with one of the portions not having a non-oxygen component in common with any composition directly against it in the high resistive state.

    Abstract translation: 一些实施例包括形成存储器单元的方法。 开关区域的第一部分形成在第一电极上。 使用原子层沉积在第一部分上形成开关区域的第二部分。 第二部分是与第一部分不同的组成。 在开关区域上形成离子源区。 在离子源区域上形成第二电极。 一些实施例包括具有在一对电极之间的切换区域的存储单元。 开关区域被配置为在低电阻状态和高电阻状态之间可逆地转变。 开关区域包括两个或更多个离散部分，其中一个部分不具有与在高电阻状态下直接抵抗它的任何组成成分相同的非氧分量。

    ELECTRONIC DEVICES INCLUDING FERROELECTRIC MATERIALS, AND RELATED MEMORY DEVICES
    48.
    发明申请
    ELECTRONIC DEVICES INCLUDING FERROELECTRIC MATERIALS, AND RELATED MEMORY DEVICES 有权

    公开(公告)号：US20250098175A1

    公开(公告)日：2025-03-20

    申请号：US18960091

    申请日：2024-11-26

    Applicant: Micron Technology, Inc.

    Inventor： Qian Tao ,  Matthew N. Rocklein ,  Beth R. Cook ,  D. V. Nirmal Ramaswamy

    IPC: H10B53/30 ,  H10N70/00 ,  H10N70/20

    Abstract: An electronic device comprises ferroelectric random access memory cells. One or more of the ferroelectric random access memory cells comprises a crystallized ferroelectric material and an electrode adjacent to the crystallized ferroelectric material. The crystallized ferroelectric material exhibits a dominant crystallographic orientation. The electrode comprises a crystalline material exhibiting an additional dominant crystallographic orientation inducing the dominant crystallographic orientation of the crystallized ferroelectric material. A memory device is also disclosed comprising an array of ferroelectric memory cells. The ferroelectric memory cell comprises a crystallized ferroelectric material having a first side and a second side opposite the first side, and an electrode adjacent the first side of the ferroelectric material. The crystallized ferroelectric material comprises a crystallized hafnium-based material exhibiting a dominant (200) crystallographic orientation. The electrode comprises a crystalline titanium nitride material formulated to induce the dominant (200) crystallographic orientation of the crystallized ferroelectric material.

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