公开(公告)号：US20090321253A1

公开(公告)日：2009-12-31

申请号：US12490034

申请日：2009-06-23

申请人： Tomohiro ASOU ,  Seiya KUNIOKA ,  Hitoshi MURAMATSU ,  Nobuyuki SYZUKI ,  Akira Ishibashi ,  Makoto Kawai

发明人： Tomohiro ASOU ,  Seiya KUNIOKA ,  Hitoshi MURAMATSU ,  Nobuyuki SYZUKI ,  Akira Ishibashi ,  Makoto Kawai

IPC分类号： C25D17/10

CPC分类号： C25D5/34 ,  C25D7/04 ,  C25D17/12 ,  C25F3/02 ,  C25F7/00

摘要： An electrode mounting structure of a surface treatment apparatus in which a metal electrode is disposed so as to oppose to an inner-peripheral surface of a cylinder, the electrode and the cylinder are energized in a state where treatment liquid is interposed between the electrode and the cylinder inner-peripheral surface so as to perform pre-plating or plating to the cylinder inner-peripheral surface, and the metal electrode is detachably attached to a metal electrode holder member. The structure includes a resin coupler having a threaded portion engaged with a threaded portion formed on the electrode holder member.

摘要翻译： 一种表面处理装置的电极安装结构，其中金属电极设置成与气缸的内周面相对设置，电极和气缸在处理液介于电极和电极之间的状态下通电 气缸内周面，以便对气缸内周面进行预镀或电镀，并且金属电极可拆卸地安装在金属电极保持构件上。 该结构包括树脂耦合器，其具有与形成在电极保持器构件上的螺纹部分接合的螺纹部分。

公开(公告)号：US20090246935A1

公开(公告)日：2009-10-01

申请号：US12383834

申请日：2009-03-27

申请人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Shoji Akiyama ,  Hiroshi Tamura

发明人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Shoji Akiyama ,  Hiroshi Tamura

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  Y10S438/964 ,  Y10S438/967

摘要： Provided is a method for producing an SOI substrate comprising a transparent insulating substrate and a silicon film formed on a first major surface of the insulating substrate wherein a second major surface of the insulating substrate which is opposite to the major surface is roughened, the method suppressing the generation of metal impurities and particles in a simple and easy way. More specifically, provided is a method for producing an SOI substrate comprising a transparent insulating substrate, a silicon film formed on a first major surface of the transparent insulating substrate, and a roughened second major surface, which is opposite to the first major surface, the method comprising steps of: providing the transparent insulating substrate, mirror surface-processing at least the first major surface of the transparent insulating substrate, forming a silicon film on the first major surface of the transparent insulating substrate, and laser-processing the second major surface of the transparent insulating substrate so as to roughen the second major surface by using a laser.

摘要翻译： 提供一种制造SOI基板的方法，该SOI基板包括透明绝缘基板和形成在绝缘基板的第一主表面上的硅膜，其中绝缘基板的与主表面相对的第二主表面被粗糙化，该方法抑制 以简单方便的方式生成金属杂质和颗粒。 更具体地说，提供一种SOI基板的制造方法，其包括透明绝缘基板，形成在透明绝缘基板的第一主表面上的硅膜和与第一主表面相对的粗糙化的第二主表面， 方法包括以下步骤：提供透明绝缘基板，至少透明绝缘基板的第一主表面进行镜面处理，在透明绝缘基板的第一主表面上形成硅膜，并且对第二主表面进行激光加工 的透明绝缘基板，以便通过使用激光使第二主表面粗糙化。

公开(公告)号：US20090112479A1

公开(公告)日：2009-04-30

申请号：US11996473

申请日：2006-05-30

申请人： Makoto Kawai ,  Hisashi Koga ,  Masatoshi Murakami

发明人： Makoto Kawai ,  Hisashi Koga ,  Masatoshi Murakami

IPC分类号： G01N33/48

CPC分类号： G16B45/00 ,  G16B5/00 ,  G16B25/00

摘要： A pathway display method in an information processing device processing information includes a pathway information acquiring step (S10), an expression information identifying step (S11), an expression information acquiring step (S12), and a dynamic image display step (S13).

摘要翻译： 信息处理设备处理信息中的路径显示方法包括路径信息获取步骤（S10），表情信息识别步骤（S11），表情信息获取步骤（S12）和动态图像显示步骤（S13）。

公开(公告)号：US20090057791A1

公开(公告)日：2009-03-05

申请号：US12281886

申请日：2007-03-12

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L21/762 ,  H01L29/66 ,  H01L29/02

CPC分类号： H01L21/76254 ,  H01L21/84

摘要： A plasma treatment or an ozone treatment is applied to the respective bonding surfaces of the single-crystal Si substrate in which the ion-implanted layer has been formed and the quartz substrate, and the substrates are bonded together. Then, a force of impact is applied to the bonded substrate to peel off a silicon thin film from the bulk portion of single-crystal silicon along the hydrogen ion-implanted layer, thereby obtaining an SOI substrate having an SOI layer on the quartz substrate. A concave portion, such as a hole or a micro-flow passage, is formed on a surface of the quartz substrate of the SOI substrate thus obtained, so that processes required for a DNA chip or a microfluidic chip are applied. A silicon semiconductor element for the analysis/evaluation of a sample attached/held to this concave portion is formed in the SOI layer.

摘要翻译： 对已经形成有离子注入层的单晶Si衬底和石英衬底的各个接合表面施加等离子体处理或臭氧处理，并将衬底接合在一起。 然后，对键合衬底施加冲击力，沿着氢离子注入层从单晶硅的主体部分剥离硅薄膜，从而获得在石英衬底上具有SOI层的SOI衬底。 在如此获得的SOI衬底的石英衬底的表面上形成诸如孔或微流通道的凹部，从而应用DNA芯片或微流体芯片所需的工艺。 在SOI层中形成用于分析/评价附着/保持在该凹部的样品的硅半导体元件。

公开(公告)号：US20090032831A1

公开(公告)日：2009-02-05

申请号：US12076617

申请日：2008-03-20

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Makoto Kawai

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Makoto Kawai

IPC分类号： H01L33/00

CPC分类号： G02B6/132 ,  G02B6/1347 ,  G02F1/0126 ,  G02F1/025 ,  G02F2202/105 ,  G02F2203/48 ,  Y10S438/967

摘要： An optical waveguide apparatus having a very simple structure that can modulate a signal light guided through an optical waveguide is provided. A photoresist 13 is applied to an upper side of an SOI film 12, a photoresist mask 14 is formed, and the SOI film in a region that is not covered with the photoresist mask 14 is removed by etching to obtain an optical waveguide 15 having a single-crystal silicon core. Further, a light emitting device capable of irradiating the single-crystal silicon core with a light having a wavelength of 1.1 μm or below is provided on a back surface side of a quartz substrate 20 to provide an optical waveguide apparatus. When the light emitting device 30 does not apply a light, the light guided through the optical waveguide 15 is guided as it is. However, when the light emitting device 30 applies a light to form each pair of an electron and a hole in the irradiated region 16, the light guided through the optical waveguide 15 is absorbed by the pair of an electron and a hole, thereby enabling switching (modulation) for turning ON/OFF an optical signal depending on presence/absence (ON or OFF) of application of the light from the light emitting device 30.

摘要翻译： 提供一种具有可以调制通过光波导引导的信号光的非常简单结构的光波导装置。 将光致抗蚀剂13施加到SOI膜12的上侧，形成光致抗蚀剂掩模14，并且通过蚀刻除去未被光致抗蚀剂掩模14覆盖的区域中的SOI膜，以获得具有 单晶硅芯。 此外，在石英基板20的背面侧设置能够用波长为1.1μm以下的光照射单晶硅芯的发光装置，以提供光波导装置。 当发光器件30不施加光时，通过光波导15引导的光被原样引导。 然而，当发光器件30在照射区域16中施加光以形成每对电子和空穴时，通过光波导15引导的光被一对电子和空穴吸收，从而能够切换 （调制），用于根据来自发光装置30的光的施加的存在/不存在（ON或OFF）来接通/关闭光信号。

公开(公告)号：US20090007960A1

公开(公告)日：2009-01-08

申请号：US12073437

申请日：2008-03-05

申请人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

发明人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

IPC分类号： H01L31/00 ,  B32B37/12 ,  H01L21/02

CPC分类号： H01L31/056 ,  H01L21/76254 ,  H01L31/03921 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for manufacturing a single crystal silicon solar cell includes the steps of implanting either hydrogen ions or rare-gas ions into a single crystal silicon substrate; bringing the single crystal silicon substrate in close contact with a transparent insulator substrate via a transparent adhesive, with the ion-implanted surface being a bonding surface; curing the transparent adhesive; mechanically delaminating the single crystal silicon substrate to form a single crystal silicon layer; forming a plurality of diffusion areas of a second conductivity type in the delaminated surface side of the single crystal silicon layer, and causing a plurality of areas of a first conductivity type and the plurality of areas of the second conductivity type to be present in the delaminated surface of the single crystal silicon layer; forming each of a plurality of individual electrodes on each one of the plurality of areas of the first conductivity type and on each one of the plurality of areas of the second conductivity type in the single crystal silicon layer; forming a collector electrode for the plurality of individual electrodes on the plurality of areas of the first conductivity type, and a collector electrode for the plurality of individual electrodes on the plurality of areas of the second conductivity type; and forming a light-reflecting film.

摘要翻译： 制造单晶硅太阳能电池的方法包括将氢离子或稀土离子注入到单晶硅衬底中的步骤; 使单晶硅衬底通过透明粘合剂与透明绝缘体衬底紧密接触，离子注入表面是接合表面; 固化透明胶; 机械地分层单晶硅衬底以形成单晶硅层; 在单晶硅层的分层表面侧形成多个第二导电类型的扩散区域，并且使多个第一导电类型的区域和第二导电类型的多个区域存在于分层的 单晶硅层表面; 在单晶硅层中形成第一导电类型的多个区域中的每一个区域和第二导电类型的多个区域中的每一个上的多个单独电极中的每一个; 在所述第一导电类型的多个区域上形成用于所述多个单独电极的集电极，以及在所述第二导电类型的多个区域上的所述多个单独电极的集电极; 并形成光反射膜。

公开(公告)号：US20080261381A1

公开(公告)日：2008-10-23

申请号：US12081297

申请日：2008-04-14

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L21/86

CPC分类号： H01L21/76254 ,  H01L21/3046 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/1266 ,  H01L2221/68359

摘要： When manufacturing a bonded substrate using an insulator substrate as a handle wafer, there is provided a method for manufacturing a bonded substrate which can be readily removed after carried and after mounted by roughening a back surface of the bonded substrate (corresponding to a back surface of the insulator substrate) and additionally whose front surface can be easily identified like a process of a silicon semiconductor wafer in case of the bonded substrate using a transparent insulator substrate as a handle wafer.There is provided a method for manufacturing a bonded substrate in which an insulator substrate is used as a handle wafer and a donor wafer is bonded to a front surface of the insulator substrate, the method comprises at least that a sandblast treatment is performed with respect to a back surface of the insulator substrate.

摘要翻译： 当制造使用绝缘体基板作为处理晶片的键合衬底时，提供了一种用于制造键合衬底的方法，其可以在承载和安装之后通过粗糙化粘合衬底的背面（对应于 绝缘体基板），另外，在使用透明绝缘体基板作为处理晶片的键合衬底的情况下，可以容易地识别其表面像硅半导体晶片的工艺。 提供了一种用于制造键合衬底的方法，其中使用绝缘体衬底作为把手晶片，并且施主晶片结合到绝缘体衬底的前表面，该方法至少包括相对于 绝缘体基板的背面。

公开(公告)号：US20080254597A1

公开(公告)日：2008-10-16

申请号：US12076923

申请日：2008-03-25

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

IPC分类号： H01L21/30

CPC分类号： H01L21/76256 ,  H01L27/12

摘要： A method for manufacturing an SOI substrate superior in film thickness uniformity and resistivity uniformity in a substrate surface of a silicon layer having a film thickness reduced by an etch-back method is provided. After B ions is implanted into a front surface of a single-crystal Si substrate 10 to form a high-concentration boron added p layer 11 having a depth L in the outermost front surface, the single-crystal Si substrate 10 is appressed against a quartz substrate 20 to be bonded at a room temperature. Chemical etching is performed with respect to the single-crystal Si substrate 10 from a back surface thereof to set its thickness to L or below. A heat treatment is carried out with respect to an SOI substrate in a hydrogen containing atmosphere to outwardly diffuse B from the high-concentration boron added p layer 11, thereby acquiring a boron added p layer 12 having a desired resistance value. During this heat treatment, B in an Si crystal is diffused to the outside of the crystal in a state where it is coupled with hydrogen in the atmosphere, and a B concentration in the high-concentration boron added p layer 11 is reduced. In regard to a heat treatment temperature at this time, in view of a softening point of the insulative substrate, an upper limit of the heat treatment temperature is set to 1250° C., and 700° C. is selected as a lower limit of the temperature at which B can be diffused.

摘要翻译： 提供一种制造SOI衬底的方法，该SOI衬底具有通过蚀刻方法减小的膜厚度的硅层的衬底表面中的膜厚度均匀性和电阻率均匀性优异的SOI衬底。 在将B离子注入到单晶Si衬底10的前表面中以形成在最外表面具有深度L的高浓度硼添加p层11之后，将单晶Si衬底10贴在石英 基板20在室温下结合。 从其背面对单晶硅基板10进行化学蚀刻，将其厚度设定为L以下。 对含氢气氛中的SOI衬底进行热处理，从高浓度硼添加p层11向外扩散B，从而获得具有所需电阻值的添加硼的p层12。 在该热处理中，Si结晶中的B在与大气中的氢相结合的状态下扩散到晶体外部，并且在高浓度硼添加p层11中的B浓度降低。 就此时的热处理温度而言，考虑到绝缘基板的软化点，将热处理温度的上限设定为1250℃，选择700℃为下限值 B可以扩散的温度。

公开(公告)号：US06734306B2

公开(公告)日：2004-05-11

申请号：US10010863

申请日：2001-12-05

申请人： Yasuhiro Katsu ,  Makoto Kawai ,  Hiroki Koike ,  Seiji Nukui

发明人： Yasuhiro Katsu ,  Makoto Kawai ,  Hiroki Koike ,  Seiji Nukui

IPC分类号： C07D40114

CPC分类号： C07D451/02 ,  C07D401/12 ,  C07D401/14 ,  C07D451/04 ,  C07D453/02 ,  C07D487/08

摘要： This invention provides a compound of the formula (I): or the pharmaceutically acceptable salts thereof wherein X1 and X2 are halo; R1 and R2 are independently hydrogen or C1-4 alkyl; R3 and R4 are each hydrogen or halo; and R5 is (a) —C3-9 diazacycloalkyl optionally substituted with C5-11 azabicycloalkyl; (b) —C3-9 azacycloalkyl-NH—(C5-11 azabicycloalkyl optionally substituted with C1-4 alkyl); (c) —NH—C1-3 alkyl-C(O)—C5-11 diazabicycloalkyl; (d) —NH—C1-3 alkyl-C(O)—NH—C5-11 azabicycloalkyl, the C5-11 azabicycloalkyl being optionally substituted with C1-4 alkyl; (e) —C3-9 azacycloalkyl optionally substituted with C3-9 azacycloalkyl; or (f) —NH—C1-5 alkyl-NH—C(O)—C4-9 cycloalkyl-NH2. These compounds are useful for the treatment of medical conditions mediated by bradykinin such as inflammation, allergic rhinitis, pain, etc. This invention also provides a pharmaceutical composition comprising the above compound.

摘要翻译： 本发明提供式（I）化合物或其药学上可接受的盐，其中X 1和X 2为卤素; R 1和R 2独立地是氢或C 1-4烷基; R 3和R 4各自为氢或卤素; （b）-C3-9氮杂环烷基-NH-（任选被C 1-4烷基取代的C 5-10氮杂双环烷基）;（c）-C（= NH-C 1-3烷基-C（O）-C 5-11二氮杂双环烷基;（d）-NH-C 1-3烷基-C（O）-NH-C 5-11氮杂双环烷基，C 5-11氮杂双环烷基任选被C 1 -4-烷基;（e）任选被C 3-9氮杂环烷基取代的-C3-9氮杂环烷基; 或（f）-NH-C 1-5烷基-NH-C（O）-C 4-9环烷基-NH 2。这些化合物可用于治疗由缓激肽介导的医学病症如炎症，过敏性鼻炎，疼痛等。 本发明还提供了包含上述化合物的药物组合物。

公开(公告)号：US06653313B2

公开(公告)日：2003-11-25

申请号：US09903157

申请日：2001-07-11

申请人： Mitsuhiro Kawamura ,  Makoto Kawai ,  Yuji Shishido ,  Tomoki Kato ,  Yasuhiro Katsu ,  Takafumi Ikeda ,  Noriaki Murase

发明人： Mitsuhiro Kawamura ,  Makoto Kawai ,  Yuji Shishido ,  Tomoki Kato ,  Yasuhiro Katsu ,  Takafumi Ikeda ,  Noriaki Murase

IPC分类号： A61K31496

CPC分类号： A61K31/46 ,  A61K31/496 ,  C07D451/04 ,  Y02A50/411

摘要： The present invention relates to compounds of the formula wherein each A is independently halo; Y is —(CH2)m—, —C(O)— or —S(O)—; R1 and R2 are independently C1-4 alkyl; R3 is substituted azacycloalkyl etc.; R4 is phenyl substituted at the 2-position with a substituent selected from substituted C1-7 alkyl, substituted C1-7 alkoxy, amine, etc; R5 is hydrogen or C1-4 alkyl; m is 0, 1 or 2; and n is 0, 1, 2, 3, 4 or 5. The present invention also relates to pharmaceutical compositions containing such compounds and to the use of such compounds in the treatment and prevention of inflammation, asthma, allergic rhinitis, pain and other disorders.

摘要翻译： 本发明涉及各种化合物，每个A独立地是卤素; Y是 - （CH 2）m - ， - C（O） - 或-S（O） - ; R 1和R 2独立地是C 1-4烷基; R 3是取代的氮杂环烷基等; R 4是在2-位上被取代基取代的C 1-7烷基，取代的C 1-7烷氧基，胺等取代的苯基; R 5是氢或C 1-4烷基; m为0,1或2; 本发明还涉及含有这些化合物的药物组合物以及这些化合物在治疗和预防炎症，哮喘，变应性鼻炎，疼痛和其它疾病中的用途 。