Hologram reproduction method and apparatus
    45.
    发明授权
    Hologram reproduction method and apparatus 有权
    全息图再现方法和装置

    公开(公告)号:US07511867B2

    公开(公告)日:2009-03-31

    申请号:US11527577

    申请日:2006-09-27

    IPC分类号: G03H1/16 G03H1/08

    摘要: A hologram reproduction method for reproducing a hologram from an optical recording medium in which the hologram is recorded by Fourier transforming a signal light, in which digital data is represented by an image of intensity distribution, and a reference light, and simultaneously irradiating the lights in a state in which a direct current component is removed from at least the Fourier transformed signal light onto the optical recording medium is provided. The method including: irradiating a read out reference light onto the optical recording medium, and generating a diffracted light from the recorded hologram; generating all or a part of a direct current component contained in a Fourier transformed image of the signal light; combining the diffracted light and the generated all or a part of the direct current component, and generating a combined beam; and reproducing the signal light by inverse-Fourier transforming the combined beam.

    摘要翻译: 一种全息图再现方法,用于通过对其中数字数据由强度分布的图像表示的信号光和参考光进行傅里叶变换来记录全息图的光记录介质中再现全息图,同时将 提供了将直流分量从至少傅里叶变换信号光去除到光记录介质上的状态。 该方法包括:将读出的参考光照射到光学记录介质上,并从记录的全息图产生衍射光; 产生包含在信号光的傅里叶变换图像中的直流分量的全部或一部分; 组合衍射光和产生的全部或一部分直流分量,并产生组合光束; 以及通过对组合光束进行傅里叶逆变换来再现信号光。

    Method for preparing zinc oxide semi-conductor material
    50.
    发明授权
    Method for preparing zinc oxide semi-conductor material 失效
    制备氧化锌半导体材料的方法

    公开(公告)号:US06860937B1

    公开(公告)日:2005-03-01

    申请号:US10240915

    申请日:2000-03-27

    申请人: Koichi Haga

    发明人: Koichi Haga

    摘要: A method for preparing zinc oxide semiconductor material in which an organometallic compound containing zinc as a metal composition is introduced into a reaction chamber and the zinc-containing organic compound is vaporized to effect a specific decomposition reaction on a substrate, thereby forming a zinc oxide semiconductor material on the substrate. The zinc-containing organic compound employed is one having a low reactivity with oxygen in a vapor phase under the temperature atmosphere in the reaction chamber.

    摘要翻译: 一种制备氧化锌半导体材料的方法,其中将含有锌作为金属组合物的有机金属化合物引入反应室,并使含锌有机化合物蒸发以在基板上进行特定的分解反应,从而形成氧化锌半导体 材料在基板上。 所用的含锌有机化合物是在反应室中的温度气氛下在气相中与氧具有低反应性的化合物。