公开(公告)号：US5350709A

公开(公告)日：1994-09-27

申请号：US75232

申请日：1993-06-10

申请人： Yasoo Harada ,  Shigeharu Matsushita ,  Satoshi Terada ,  Emi Fujii ,  Takashi Kurose ,  Takayoshi Higashino ,  Takashi Yamada ,  Akihito Nagamatsu ,  Daijirou Inoue ,  Kouji Matsumura

发明人： Yasoo Harada ,  Shigeharu Matsushita ,  Satoshi Terada ,  Emi Fujii ,  Takashi Kurose ,  Takayoshi Higashino ,  Takashi Yamada ,  Akihito Nagamatsu ,  Daijirou Inoue ,  Kouji Matsumura

IPC分类号： H01L21/18 ,  H01L21/22 ,  H01L21/225 ,  H01L21/285 ,  H01L21/314 ,  H01L21/324 ,  H01L21/329 ,  H01L21/335 ,  H01L21/338 ,  H01L21/8252 ,  H01L27/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66 ,  H01L29/775 ,  H01L29/778 ,  H01L29/812 ,  H01L29/8605

CPC分类号： B82Y10/00 ,  H01L21/22 ,  H01L21/2258 ,  H01L21/28587 ,  H01L21/28593 ,  H01L21/3144 ,  H01L21/3245 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/0891 ,  H01L29/1025 ,  H01L29/66075 ,  H01L29/66196 ,  H01L29/66462 ,  H01L29/66469 ,  H01L29/66856 ,  H01L29/66871 ,  H01L29/66878 ,  H01L29/66977 ,  H01L29/775 ,  H01L29/7787 ,  H01L29/812 ,  H01L29/8122 ,  H01L29/8605 ,  Y10S148/034 ,  Y10S438/962

摘要： A method of doping a Group III-V compound semiconductor with an impurity, wherein after an undoped film of SiOx and a film for preventing the diffusion of Group V atoms (e.g., an SiN film) are formed in this order on a crystal of Group III-V compound semiconductor, the sample is subjected to at least one heat treatment to cause silicon in the SiOx film to diffuse into the Group III-V compound semiconductor, thereby forming a doped layer. Using this doped layer forming method, field-effect transistors, diodes, resistive layers, two-dimensional electron gas or one-dimensional quantum wires, zero-dimensional quantum boxes, electron wave interference devices, etc. are fabricated.

摘要翻译： 掺杂III-V族化合物半导体与杂质的方法，其中在未掺杂的SiOx膜和用于防止V族原子扩散的膜（例如，SiN膜）之后，依次形成在组的晶体上 III-V族化合物半导体，对该样品进行至少一次热处理以使SiOx膜中的硅扩散到III-V族化合物半导体中，从而形成掺杂层。 使用这种掺杂层形成方法，制造场效应晶体管，二极管，电阻层，二维电子气或一维量子线，零维量子箱，电子波干涉装置等。