公开(公告)号：US5557141A

公开(公告)日：1996-09-17

申请号：US220542

申请日：1994-03-30

申请人： Yasoo Harada ,  Shigeharu Matsushita ,  Satoshi Terada ,  Emi Fujii ,  Takashi Kurose ,  Takayoshi Higashino ,  Takashi Yamada ,  Akihito Nagamatsu ,  Daijirou Inoue ,  Kouji Matsumura

发明人： Yasoo Harada ,  Shigeharu Matsushita ,  Satoshi Terada ,  Emi Fujii ,  Takashi Kurose ,  Takayoshi Higashino ,  Takashi Yamada ,  Akihito Nagamatsu ,  Daijirou Inoue ,  Kouji Matsumura

IPC分类号： H01L21/18 ,  H01L21/22 ,  H01L21/225 ,  H01L21/285 ,  H01L21/314 ,  H01L21/324 ,  H01L21/329 ,  H01L21/335 ,  H01L21/338 ,  H01L21/8252 ,  H01L27/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66 ,  H01L29/775 ,  H01L29/778 ,  H01L29/812 ,  H01L29/8605 ,  H01L23/58 ,  H01L29/00 ,  H01L29/06 ,  H01L31/0328

CPC分类号： B82Y10/00 ,  H01L21/22 ,  H01L21/2258 ,  H01L21/28587 ,  H01L21/28593 ,  H01L21/3144 ,  H01L21/3245 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/0891 ,  H01L29/1025 ,  H01L29/66075 ,  H01L29/66196 ,  H01L29/66462 ,  H01L29/66469 ,  H01L29/66856 ,  H01L29/66871 ,  H01L29/66878 ,  H01L29/66977 ,  H01L29/775 ,  H01L29/7787 ,  H01L29/812 ,  H01L29/8122 ,  H01L29/8605 ,  Y10S148/034 ,  Y10S438/962

摘要： A group III-V compound semiconductor doped with an impurity, having an undoped film of SiOx and a film for preventing the diffusion of Group V atoms (e.g., an SiN film) are formed on a crystal of Group III-V compound semiconductor in which the silicon in the SiOx film is diffused into the Group III-V compound semiconductor, thereby forming a doped layer.

摘要翻译： 在III-V族化合物半导体的晶体上形成掺杂有杂质的III-V族化合物半导体的晶体，具有SiO x的未掺杂膜和防止V族原子扩散的膜（例如SiN膜） SiO x膜中的硅扩散到III-V族化合物半导体中，从而形成掺杂层。

公开(公告)号：US5350709A

公开(公告)日：1994-09-27

申请号：US75232

申请日：1993-06-10

申请人： Yasoo Harada ,  Shigeharu Matsushita ,  Satoshi Terada ,  Emi Fujii ,  Takashi Kurose ,  Takayoshi Higashino ,  Takashi Yamada ,  Akihito Nagamatsu ,  Daijirou Inoue ,  Kouji Matsumura

发明人： Yasoo Harada ,  Shigeharu Matsushita ,  Satoshi Terada ,  Emi Fujii ,  Takashi Kurose ,  Takayoshi Higashino ,  Takashi Yamada ,  Akihito Nagamatsu ,  Daijirou Inoue ,  Kouji Matsumura

IPC分类号： H01L21/18 ,  H01L21/22 ,  H01L21/225 ,  H01L21/285 ,  H01L21/314 ,  H01L21/324 ,  H01L21/329 ,  H01L21/335 ,  H01L21/338 ,  H01L21/8252 ,  H01L27/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66 ,  H01L29/775 ,  H01L29/778 ,  H01L29/812 ,  H01L29/8605

CPC分类号： B82Y10/00 ,  H01L21/22 ,  H01L21/2258 ,  H01L21/28587 ,  H01L21/28593 ,  H01L21/3144 ,  H01L21/3245 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/0891 ,  H01L29/1025 ,  H01L29/66075 ,  H01L29/66196 ,  H01L29/66462 ,  H01L29/66469 ,  H01L29/66856 ,  H01L29/66871 ,  H01L29/66878 ,  H01L29/66977 ,  H01L29/775 ,  H01L29/7787 ,  H01L29/812 ,  H01L29/8122 ,  H01L29/8605 ,  Y10S148/034 ,  Y10S438/962

摘要： A method of doping a Group III-V compound semiconductor with an impurity, wherein after an undoped film of SiOx and a film for preventing the diffusion of Group V atoms (e.g., an SiN film) are formed in this order on a crystal of Group III-V compound semiconductor, the sample is subjected to at least one heat treatment to cause silicon in the SiOx film to diffuse into the Group III-V compound semiconductor, thereby forming a doped layer. Using this doped layer forming method, field-effect transistors, diodes, resistive layers, two-dimensional electron gas or one-dimensional quantum wires, zero-dimensional quantum boxes, electron wave interference devices, etc. are fabricated.

摘要翻译： 掺杂III-V族化合物半导体与杂质的方法，其中在未掺杂的SiOx膜和用于防止V族原子扩散的膜（例如，SiN膜）之后，依次形成在组的晶体上 III-V族化合物半导体，对该样品进行至少一次热处理以使SiOx膜中的硅扩散到III-V族化合物半导体中，从而形成掺杂层。 使用这种掺杂层形成方法，制造场效应晶体管，二极管，电阻层，二维电子气或一维量子线，零维量子箱，电子波干涉装置等。

公开(公告)号：US20060177077A1

公开(公告)日：2006-08-10

申请号：US11350442

申请日：2006-02-09

申请人： Yasuyuki Okada ,  Akihito Nagamatsu ,  Katsuaki Onoda ,  Shigehiro Nakamura ,  Mikito Sakakibara

发明人： Yasuyuki Okada ,  Akihito Nagamatsu ,  Katsuaki Onoda ,  Shigehiro Nakamura ,  Mikito Sakakibara

IPC分类号： H04B1/00

CPC分类号： H03D7/02

摘要： A high frequency mixer circuit is used as a down converter in which an RF signal and an LO signal are mixed to generate an IF signal, or as an up converter in which an IF signal and an LO signal are mixed to generate an RF signal. The high frequency mixer circuit has a wiring layout wherein wiring lines for propagating LO signals intersect only one of the wiring lines for propagating RF signals or IF signals.

摘要翻译： 高频混频器电路被用作下变频器，其中RF信号和LO信号被混合以产生IF信号，或者作为混频IF信号和LO信号以产生RF信号的上变频器。 高频混频器电路具有布线布局，其中用于传播LO信号的布线仅与用于传播RF信号或IF信号的布线之一相交叉。

公开(公告)号：US5051373A

公开(公告)日：1991-09-24

申请号：US461356

申请日：1990-01-05

申请人： Takashi Yamada ,  Akihito Nagamatsu ,  Seiichi Bamba ,  Tetsuro Sawai ,  Haruo Nakano ,  Kimihiko Nagami

发明人： Takashi Yamada ,  Akihito Nagamatsu ,  Seiichi Bamba ,  Tetsuro Sawai ,  Haruo Nakano ,  Kimihiko Nagami

IPC分类号： H01L21/822 ,  G06F17/50 ,  H01L21/338 ,  H01L21/82 ,  H01L21/8252 ,  H01L27/04 ,  H01L29/778 ,  H01L29/812 ,  H01P3/08 ,  H01P5/08 ,  H01P11/00 ,  H03F3/60

CPC分类号： H01L21/8252

摘要： An active device such as an HEMT is formed on a GaAs substrate, and characteristics of this active device formed are measured. A circuit pattern of a passive circuit device including a serial microstrip line is simulated on the basis of the results of this measurement, and a circuit pattern obtained by the simulation is directly drawn on a substrate to form the passive circuit device, thereby to fabricate an MMIC. Accordingly, the passive circuit device is formed in conformity with the characteristics of the active device for each chip.As a result, the variation in characteristics of the active device is canceled, to obtain an MMIC superior in matching.

摘要翻译： 在GaAs衬底上形成诸如HEMT的有源器件，并且测量形成的该有源器件的特性。 基于该测量的结果，模拟包括串行微带线的无源电路装置的电路图案，并且将通过仿真获得的电路图案直接绘制在基板上以形成无源电路装置，从而制造 MMIC。 因此，根据每个芯片的有源器件的特性，形成无源电路器件。 结果，有源器件的特性的变化被消除，以获得匹配的MMIC优越性。