摘要:
An optical semiconductor device manufacturing method is disclosed which involves an ion implantation step of implanting ions into a compound semiconductor wafer through an ion implantation mask and an annealing step of activating atoms in the compound semiconductor wafer through an annealing mask film. The ion implantation step and the annealing step are performed in succession after laminating mono- or multi-layered compound semiconductor layers as the ion implantation mask and the annealing mask film on the compound semiconductor wafer.
摘要:
The short optical pulse generator is provided with a semiconductor laser which oscillates continuously at a single wavelength, a semiconductor electro-absorption type optical modulator which performs the intensity modulation of the output light from the laser, and a sinusoidal voltage generator and a DC voltage generator for driving the electro-absorption type optical modulator. A DC voltage is applied to the electro-absorption type optical modulator so that the output light from the laser is sufficiently extinguished. By applying a sinusoidal voltage to the optical modulator, short optical pulses are generated.
摘要:
An optical modulating device is disclosed which has, on a substrate directly or via a lower cladding layer, an optical waveguide layer, an upper cladding layer of a refractive index smaller than that of the optical waveguide layer and a pair of electrodes for applying an electric field across the substrate and the upper cladding layer and in which the absorption coefficient for incident light of a fixed intensity incident to the optical waveguide layer is varied by the electric field applied across the pair of electrodes to perform the modulation of the light and the modulated light is emitted from a light emitting end face of the optical waveguide layer. In accordance with the present invention, a pn junction is formed in the upper cladding layer and at least one buffer layer of an energy gap smaller than that of the upper cladding layer but larger than that of the optical waveguide layer is interposed between the upper cladding layer and the optical waveguide layer.
摘要:
An optical modulation element is disclosed which has, on a substrate directly or through a lower clad layer, an optical waveguide layer of a low impurity concentration, an upper clad layer of a refractive index smaller than that of the optical waveguide layer, and electrodes, and in which light of a constant intensity incident on a light incident end face of the optical waveguide layer is intensity-modulated by changing the absorption coefficient of the optical waveguide layer by means of an electric field applied thereto across the electrodes so that the thus modulated light is emitted from a light emitting end face of the optical waveguide layer. In accordance with the present invention, a plurality of low impurity concentration regions and a plurality of high impurity concentration regions are disposed alternately with each other in contact with at least one of the lower and upper clad layers in the direction of travel of light in such a manner that the distribution density of the plurality of high impurity concentration regions increases in the direction of travel of light.
摘要:
A semiconductor integrated light emitting device is disclosed which comprises a light emitting waveguide including a light emitting layer, and an external waveguide directly coupled to the light emitting waveguide. In accordance with the present invention, the light emitting waveguide and the external waveguide are mutually laminated in the vicinity of a region where they are directly coupled together.The intensity of the optical output from the light emitting waveguide is modulated in the external waveguide by the electroabsorption effect.
摘要:
The short optical pulse generator is provided with a semiconductor laser which oscillates continuously at a single wavelength, a semiconductor electro-absorption type optical modulator which performs the intensity modulation of the output light from the laser, and a sinusoidal voltage generator and a DC voltage generator for driving the electro-absorption type optical modulator. A DC voltage is applied to the electro-absorption type optical modulator so that the output light from the laser is sufficiently extinguished. By applying a sinusoidal voltage to the optical modulator, short optical pulses are generated.
摘要:
An optical short pulse generating device is disclosed, in which semiconductor laser light of a fixed intensity is launched into a first semiconductor electroabsorption optical modulator which is driven by a 0V or forward bias voltage and a sinusoidal voltage, and the output light from the first optical modulator is launched into a second electroabsorption optical modulator to which is applied a bias voltage and a sinusoidal voltage having delayed from the said sinusoidal voltage for a period of time corresponding to the phase reversal thereof, whereby it is possible to generate optical short pulses of a repetition frequency twice higher than the oscillation frequency of a sinusoidal voltage generator.
摘要:
An optical modulation device is disclosed in which a difference between the photon energy of incident light and the band-gap energy of the modulation waveguide layer is set to a value greater than 50 meV to thereby suppress the degradation of the modulation voltage and the modulation band width which is caused by an increase in the intensity of incident light and in that the optical modulation device is formed in a predetermined length to thereby decrease the modulation voltage. The energy gap of the optical waveguide layer of the optical modulation device is varied continuously or discontinuously in the direction of its thickness to provide a constant absorption coefficient thickwise of the optical waveguide layer so that the electric field intensity distribution in the optical waveguide layer is compensated for, by which overlap of the light distribution and the absorption coefficient is increased so as to decrease the modulation voltage and broaden the modulation band by the reduction of the length of the device. The composition, thickness and stripe width of the optical waveguide layer are changed so that its absorption coefficient increases from the light receiving end face of the optical waveguide layer toward its light emitting end face, thereby making the number of carriers absorbed per unit length substantially constant in the direction of travel of light.
摘要:
A protection path reservation method which reserves protection paths to avoid a node failure for each transmission path on a network formed of a plurality of nodes, comprising assuming the nodes as an imaginary failure node in turn in a condition in which the node failure is not present in the network, and selecting N neighbor nodes connected to the imaginary failure node through N links, wherein the imaginary failure nodes sequentially transmit protection path reservation request messages to neighbor nodes, and the nodes which have received the protection path reservation request messages sequentially, one by one, reserve N−1 protection paths starting from the nodes.
摘要:
An image pickup apparatus includes a system controller and a face detector, and can register face data of a photographer for a self-timer shooting mode in advance. In the self-timer shooting mode, the face detector extracts face data of people in a subject field from an image signal. When the system controller determines, on the basis of the extracted face data and the registered face data, that the photographer can be detected, the apparatus starts countdown for automatic shooting. Consequently, the apparatus can pick up an image of the photographer without fail, and the photographer can securely strike a pose within the countdown period of time. Furthermore, the apparatus can determine the countdown period of time optionally, thereby enabling the self-timer shooting to be executed depending on the personality of the photographer.