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公开(公告)号：US4811352A
公开(公告)日：1989-03-07
申请号：US147229
申请日：1988-01-22
CPC分类号： H01S5/125 , H01S5/0265 , H01S5/12
摘要： A semiconductor integrated light emitting device is disclosed which comprises a light emitting waveguide including a light emitting layer, and an external waveguide directly coupled to the light emitting waveguide. In accordance with the present invention, the light emitting waveguide and the external waveguide are mutually laminated in the vicinity of a region where they are directly coupled together.The intensity of the optical output from the light emitting waveguide is modulated in the external waveguide by the electroabsorption effect.
摘要翻译： 公开了一种半导体集成发光器件，其包括包括发光层的发光波导和直接耦合到发光波导的外部波导。 根据本发明，发光波导和外部波导相互层叠在直接耦合在一起的区域附近。 通过电吸收效应在外部波导管中调制来自发光波导的光输出的强度。
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公开(公告)号：US4837526A
公开(公告)日：1989-06-06
申请号：US42433
申请日：1987-04-24
CPC分类号： G02F1/025 , G02F2001/0154 , G02F2001/0157 , G02F2203/25 , G02F2203/255
摘要： A semiconductor external modulator is disclosed in which the mode of polarization of incident light, the crystal plane of the substrate (the direction of application of an electrical field), the energy gap of the optical waveguide layer, and the direction of travel of light are determined so that, of variations in the real and imaginary parts of the refractive index of the optical waveguide layer which are caused by the application of the electric field to the semiconductor external optical modulator, the variation in the real part of the refractive index may be reduced to substantially zero.
摘要翻译： 公开了一种半导体外部调制器，其中入射光的偏振模式，衬底的晶面（施加电场的方向），光波导层的能隙以及光的行进方向是 确定为使得由于对半导体外部光学调制器施加电场而导致的光波导层的折射率的实部和虚部的变化，折射率的实部的变化可以是 降至基本为零。
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3.发明授权Method for manufacturing semiconductor optical integrated device with optical waveguide regions 失效具有光波导区域的半导体光集成器件的制造方法
公开(公告)号：US4820655A
公开(公告)日：1989-04-11
申请号：US15953
申请日：1987-02-18
IPC分类号： H01L27/15 , G02B6/122 , G02F1/025 , H01S5/00 , H01S5/026 , H01S5/10 , H01S5/12 , H01L21/20 , H01L21/203 , H01L21/205
CPC分类号： H01S5/0265 , H01S5/1021 , H01S5/12
摘要： A method for manufacturing a semiconductor optical integrated device in which a semiconductor element A having an optical waveguide region and a semiconductor element B having another optical waveguide region are integrated on a single substrate. In accordance with the present invention, there is provided steps of growing the optical waveguide region of the semiconductor element A and a protective layer therefor are grown on the entire area of the substrate surface, selectively removing them from the substrate surface in the region to be ultimately occupied by the semiconductor element B, and forming in the region the optical waveguide region of the semiconductor element B through crystal growth.
摘要翻译： 一种半导体光学集成装置的制造方法，其中具有光波导区域的半导体元件A和具有另一个光波导区域的半导体元件B集成在单个基板上。 根据本发明，提供了在衬底表面的整个区域上生长半导体元件A的光波导区域和其保护层的步骤，从该区域中的衬底表面选择性地将其除去 最终由半导体元件B占据，并且通过晶体生长在该区域中形成半导体元件B的光波导区域。
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公开(公告)号：US4811353A
公开(公告)日：1989-03-07
申请号：US15954
申请日：1987-02-18
IPC分类号： G02B6/12 , G02F1/015 , G02F1/025 , H01S5/00 , H01S5/026 , H01S5/12 , H01S5/16 , H01S3/19 , H01S3/10
摘要： A semiconductor optical modulator is disclosed which is capable of high-speed modulation without the necessity of increasing the modulating voltage. The present invention has its feature in that the carrier density of the clad layer adjoining the optical waveguide layer 3 is gradually raised toward the p-n junction or Schottky junction, thereby increasing the width of the depletion layer to decrease the junction capacitance.
摘要翻译： 公开了一种能够高速调制而不需要增加调制电压的半导体光调制器。 本发明的特征在于，与光波导层3相邻的包层的载流子密度朝向p-n结或肖特基结逐渐升高，从而增加耗尽层的宽度以降低结电容。
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公开(公告)号：US5786918A
公开(公告)日：1998-07-28
申请号：US575174
申请日：1995-12-19
申请人： Masatoshi Suzuki , Hidenori Taga , Noboru Edagawa , Hideaki Tanaka , Shu Yamamoto , Shigeyuki Akiba
发明人： Masatoshi Suzuki , Hidenori Taga , Noboru Edagawa , Hideaki Tanaka , Shu Yamamoto , Shigeyuki Akiba
IPC分类号： G02F1/35 , H04B10/07 , H04B10/2507 , H04B10/2543 , H04B10/294 , H04B10/516 , H04B10/61 , H04J14/08 , H04B10/00
CPC分类号： H04B10/25077 , H04J14/08
摘要： An optical communication system of a construction wherein the average wavelength dispersion value of the transmission optical fiber used, the optical output intensity of each optical amplifier repeater inserted in the transmission optical fiber and the widths of return-to-zero optical pulses transmitted over the transmission line are determined so as to compensate for the pulse compression effect by the nonlinear optical effect produced on the optical pulses by the pulse spreading effect by the wavelength dispersion effect. An optical multiplexer in the optical transmitting device time-division multiplexes the return-to-zero optical pulses, and the optical multiplexed signal is provided as an alternating-amplitude optical signal with the amplitudes of the return-to-zero optical pulses alternated.
摘要翻译： 一种结构的光通信系统，其中使用的传输光纤的平均波长色散值，插入在传输光纤中的每个光放大器中继器的光输出强度以及通过传输传输的归零光脉冲的宽度 线被确定为通过由脉冲扩散效应通过波长色散效应在光脉冲上产生的非线性光学效应来补偿脉冲压缩效应。 光发射装置中的光复用器对归零光脉冲进行时分复用，并且光复用信号被提供为交替振幅的光信号，并且返回到零的光脉冲的幅度交替。
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公开(公告)号：US5019519A
公开(公告)日：1991-05-28
申请号：US316865
申请日：1989-02-28
IPC分类号： H01L21/265 , G02B6/134 , H01L21/306 , H01L21/324 , H01S5/00 , H01S5/026 , H01S5/042 , H01S5/20
CPC分类号： H01S5/0265 , G02B6/1347 , H01L21/30612 , H01L21/3245 , H01S5/20 , H01S5/2059 , H01S5/2063 , Y10S148/084
摘要： An optical semiconductor device manufacturing method is disclosed which involves an ion implantation step of implanting ions into a compound semiconductor wafer through an ion implantation mask and an annealing step of activating atoms in the compound semiconductor wafer through an annealing mask film. The ion implantation step and the annealing step are performed in succession after laminating mono- or multi-layered compound semiconductor layers as the ion implantation mask and the annealing mask film on the compound semiconductor wafer.
摘要翻译： 公开了一种光学半导体器件制造方法，其包括通过离子注入掩模将离子注入化合物半导体晶片的离子注入步骤和通过退火掩模膜激活化合物半导体晶片中的原子的退火步骤。 在将单层或多层化合物半导体层作为离子注入掩模和化合物半导体晶片上的退火掩模膜层叠之后，依次进行离子注入步骤和退火步骤。
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公开(公告)号：US4913506A
公开(公告)日：1990-04-03
申请号：US311218
申请日：1989-02-16
CPC分类号： B82Y20/00 , G02F1/01708 , G02F1/025 , G02F2001/0157 , G02F2202/101 , G02F2202/102
摘要： An optical modulation device is disclosed in which a difference between the photon energy of incident light and the band-gap energy of the modulation waveguide layer is set to a value greater than 50 meV to thereby suppress the degradation of the modulation voltage and the modulation band width which is caused by an increase in the intensity of incident light and in that the optical modulation device is formed in a predetermined length to thereby decrease the modulation voltage. The energy gap of the optical waveguide layer of the optical modulation device is varied continuously or discontinuously in the direction of its thickness to provide a constant absorption coefficient thickwise of the optical waveguide layer so that the electric field intensity distribution in the optical waveguide layer is compensated for, by which overlap of the light distribution and the absorption coefficient is increased so as to decrease the modulation voltage and broaden the modulation band by the reduction of the length of the device. The composition, thickness and stripe width of the optical waveguide layer are changed so that its absorption coefficient increases from the light receiving end face of the optical waveguide layer toward its light emitting end face, thereby making the number of carriers absorbed per unit length substantially constant in the direction of travel of light.
摘要翻译： 公开了一种光调制装置，其中将入射光的光子能量与调制波导层的带隙能量之间的差设定为大于50meV的值，从而抑制调制电压和调制带的劣化 由入射光强度的增加引起的宽度，并且光调制装置形成为预定长度，从而降低调制电压。 光调制装置的光波导层的能隙在其厚度方向上连续或不连续地变化，以提供光波导层厚度的恒定吸收系数，使得光波导层中的电场强度分布得到补偿 由此，增加了光分布和吸收系数的重叠，从而降低了调制电压，并且通过减小器件的长度来扩大调制频带。 改变光波导层的组成，厚度和条纹宽度，使得其吸收系数从光波导层的光接收端面向其发光端面增加，从而使每单位长度吸收的载流子基本恒定 在光的行进方向。
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8.发明授权Pn junction optical modulating device having a buffer layer with small energy gap 失效具有具有小能隙的缓冲层的Pn结光调制装置
公开(公告)号：US4991921A
公开(公告)日：1991-02-12
申请号：US442521
申请日：1989-11-27
CPC分类号： G02F1/025 , G02F2001/0157
摘要： An optical modulating device is disclosed which has, on a substrate directly or via a lower cladding layer, an optical waveguide layer, an upper cladding layer of a refractive index smaller than that of the optical waveguide layer and a pair of electrodes for applying an electric field across the substrate and the upper cladding layer and in which the absorption coefficient for incident light of a fixed intensity incident to the optical waveguide layer is varied by the electric field applied across the pair of electrodes to perform the modulation of the light and the modulated light is emitted from a light emitting end face of the optical waveguide layer. In accordance with the present invention, a pn junction is formed in the upper cladding layer and at least one buffer layer of an energy gap smaller than that of the upper cladding layer but larger than that of the optical waveguide layer is interposed between the upper cladding layer and the optical waveguide layer.
摘要翻译： 公开了一种光学调制装置，其在衬底上直接或经由下包层，光波导层，折射率小于光波导层的折射率的上包层和用于施加电的一对电极 并且其中入射到光波导层的固定强度的入射光的吸收系数由施加在该对电极上的电场而变化，以执行光的调制和被调制的 光从光波导层的发光端面发射。 根据本发明，在上部包层中形成pn结，并且至少一个能量间隙的缓冲层比上部包覆层的能隙小，但是比光波导层大的缓冲层插入在上部包层 层和光波导层。
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公开(公告)号：US4946243A
公开(公告)日：1990-08-07
申请号：US387511
申请日：1989-07-28
CPC分类号： G02F1/025 , G02F2001/0157
摘要： An optical modulation element is disclosed which has, on a substrate directly or through a lower clad layer, an optical waveguide layer of a low impurity concentration, an upper clad layer of a refractive index smaller than that of the optical waveguide layer, and electrodes, and in which light of a constant intensity incident on a light incident end face of the optical waveguide layer is intensity-modulated by changing the absorption coefficient of the optical waveguide layer by means of an electric field applied thereto across the electrodes so that the thus modulated light is emitted from a light emitting end face of the optical waveguide layer. In accordance with the present invention, a plurality of low impurity concentration regions and a plurality of high impurity concentration regions are disposed alternately with each other in contact with at least one of the lower and upper clad layers in the direction of travel of light in such a manner that the distribution density of the plurality of high impurity concentration regions increases in the direction of travel of light.
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10.发明授权公开(公告)号：US06181449B2
公开(公告)日：2001-01-30
申请号：US09032537
申请日：1998-02-27
申请人： Hidenori Taga , Kaoru Imai , Masatoshi Suzuki , Shu Yamamoto , Shigeyuki Akiba
发明人： Hidenori Taga , Kaoru Imai , Masatoshi Suzuki , Shu Yamamoto , Shigeyuki Akiba
IPC分类号： H04J1402
CPC分类号： H04B10/2935 , H04B10/25073 , H04B10/25133 , H04J14/0221
摘要： A wavelength division multiplexed optical processing device and an optical communication transmission path which are capable of significantly improving the transmission characteristic of wavelength division multiplexed optical signals. A wavelength division multiplexed optical processing device is formed by a first arrayed optical waveguide for demultiplexing entered wavelength division multiplexed optical signals, and outputting demultiplexed optical signals; a plurality of correction units for correcting respective optical signals demultiplexed by the first arrayed optical waveguide; and a second arrayed optical waveguide for multiplexing optical signals corrected by the correction unit, and outputting multiplexed optical signals. An optical communication transmission path is formed by an optical transmission path; and at least one wavelength division multiplexed optical processing device using an arrayed optical waveguide having a transmission wavelength characteristic with a flat top shape, which is inserted into the optical transmission path at a prescribed interval.
摘要翻译： 能够显着提高波分复用光信号的传输特性的波分复用光处理装置和光通信传输路径。 波分复用光处理装置由第一阵列光波导形成，用于对输入的波分复用光信号进行解复用，并输出解复用的光信号; 多个校正单元，用于校正由第一阵列光波导解复用的各个光信号; 以及第二阵列光波导，用于复用由所述校正单元校正的光信号，并且输出复用的光信号。 光通信传输路径由光传输路径形成; 以及使用具有平坦顶部形状的透射波长特性的排列光波导的至少一个波分复用光学处理装置，其以规定的间隔插入到光传输路径中。
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