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公开(公告)号：US4913506A
公开(公告)日：1990-04-03
申请号：US311218
申请日：1989-02-16
CPC分类号： B82Y20/00 , G02F1/01708 , G02F1/025 , G02F2001/0157 , G02F2202/101 , G02F2202/102
摘要： An optical modulation device is disclosed in which a difference between the photon energy of incident light and the band-gap energy of the modulation waveguide layer is set to a value greater than 50 meV to thereby suppress the degradation of the modulation voltage and the modulation band width which is caused by an increase in the intensity of incident light and in that the optical modulation device is formed in a predetermined length to thereby decrease the modulation voltage. The energy gap of the optical waveguide layer of the optical modulation device is varied continuously or discontinuously in the direction of its thickness to provide a constant absorption coefficient thickwise of the optical waveguide layer so that the electric field intensity distribution in the optical waveguide layer is compensated for, by which overlap of the light distribution and the absorption coefficient is increased so as to decrease the modulation voltage and broaden the modulation band by the reduction of the length of the device. The composition, thickness and stripe width of the optical waveguide layer are changed so that its absorption coefficient increases from the light receiving end face of the optical waveguide layer toward its light emitting end face, thereby making the number of carriers absorbed per unit length substantially constant in the direction of travel of light.
摘要翻译： 公开了一种光调制装置，其中将入射光的光子能量与调制波导层的带隙能量之间的差设定为大于50meV的值，从而抑制调制电压和调制带的劣化 由入射光强度的增加引起的宽度，并且光调制装置形成为预定长度，从而降低调制电压。 光调制装置的光波导层的能隙在其厚度方向上连续或不连续地变化，以提供光波导层厚度的恒定吸收系数，使得光波导层中的电场强度分布得到补偿 由此，增加了光分布和吸收系数的重叠，从而降低了调制电压，并且通过减小器件的长度来扩大调制频带。 改变光波导层的组成，厚度和条纹宽度，使得其吸收系数从光波导层的光接收端面向其发光端面增加，从而使每单位长度吸收的载流子基本恒定 在光的行进方向。
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公开(公告)号：US4946243A
公开(公告)日：1990-08-07
申请号：US387511
申请日：1989-07-28
CPC分类号： G02F1/025 , G02F2001/0157
摘要： An optical modulation element is disclosed which has, on a substrate directly or through a lower clad layer, an optical waveguide layer of a low impurity concentration, an upper clad layer of a refractive index smaller than that of the optical waveguide layer, and electrodes, and in which light of a constant intensity incident on a light incident end face of the optical waveguide layer is intensity-modulated by changing the absorption coefficient of the optical waveguide layer by means of an electric field applied thereto across the electrodes so that the thus modulated light is emitted from a light emitting end face of the optical waveguide layer. In accordance with the present invention, a plurality of low impurity concentration regions and a plurality of high impurity concentration regions are disposed alternately with each other in contact with at least one of the lower and upper clad layers in the direction of travel of light in such a manner that the distribution density of the plurality of high impurity concentration regions increases in the direction of travel of light.
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公开(公告)号：US5019519A
公开(公告)日：1991-05-28
申请号：US316865
申请日：1989-02-28
IPC分类号： H01L21/265 , G02B6/134 , H01L21/306 , H01L21/324 , H01S5/00 , H01S5/026 , H01S5/042 , H01S5/20
CPC分类号： H01S5/0265 , G02B6/1347 , H01L21/30612 , H01L21/3245 , H01S5/20 , H01S5/2059 , H01S5/2063 , Y10S148/084
摘要： An optical semiconductor device manufacturing method is disclosed which involves an ion implantation step of implanting ions into a compound semiconductor wafer through an ion implantation mask and an annealing step of activating atoms in the compound semiconductor wafer through an annealing mask film. The ion implantation step and the annealing step are performed in succession after laminating mono- or multi-layered compound semiconductor layers as the ion implantation mask and the annealing mask film on the compound semiconductor wafer.
摘要翻译： 公开了一种光学半导体器件制造方法，其包括通过离子注入掩模将离子注入化合物半导体晶片的离子注入步骤和通过退火掩模膜激活化合物半导体晶片中的原子的退火步骤。 在将单层或多层化合物半导体层作为离子注入掩模和化合物半导体晶片上的退火掩模膜层叠之后，依次进行离子注入步骤和退火步骤。
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公开(公告)号：US4773075A
公开(公告)日：1988-09-20
申请号：US893484
申请日：1986-08-05
申请人： Shigeyuki Akiba , Katsuyuki Utaka , Yukio Noda , Masatoshi Suzuki
发明人： Shigeyuki Akiba , Katsuyuki Utaka , Yukio Noda , Masatoshi Suzuki
CPC分类号： H01S5/0265 , G02B6/42 , G02B6/4207 , H01S5/0085 , H01S5/02248 , H01S5/0261 , H01S5/12
摘要： There is disclosed a light emitting device comprising at least a semiconductor laser and an optical modulating element for modulating the output light from the semiconductor laser. In accordance with the present invention, a capacitive element for suppressing noise of the semiconductor laser arising from reflected light is disposed in parallel relation to current injection terminals of the semiconductor laser.
摘要翻译： 公开了一种至少包括半导体激光器和用于调制来自半导体激光器的输出光的光调制元件的发光器件。 根据本发明，用于抑制由反射光产生的半导体激光器的噪声的电容元件与半导体激光器的电流注入端平行设置。
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公开(公告)号：US4731641A
公开(公告)日：1988-03-15
申请号：US892479
申请日：1986-08-05
申请人： Yuichi Matsushima , Kazuo Sakai , Yukitoshi Kushiro , Shigeyuki Akiba , Yukio Noda , Katsuyuki Utaka
发明人： Yuichi Matsushima , Kazuo Sakai , Yukitoshi Kushiro , Shigeyuki Akiba , Yukio Noda , Katsuyuki Utaka
IPC分类号： H01L31/107 , H01L31/18 , H01L29/201 , H01L27/14 , H01L31/08
CPC分类号： H01L31/1075 , H01L31/18
摘要： An avalanche photodiode with a quantum well layer in which a thin film, periodic multilayer structure composed of two different semiconductors is formed in a carrier multiplying region, the effective ionization coefficient ratio of carriers is raised by a quantum well layer formed by the thin film, multilayer periodic structure, and only electrons of large ionization coefficient are injected into the multiplying region, thereby to reduce noise in the APD.
摘要翻译： 具有量子阱层的雪崩光电二极管，其中在载流子倍增区域中形成由两个不同半导体构成的薄膜周期性多层结构，载流子的有效电离系数比由薄膜形成的量子阱层提高， 多层周期性结构，只有电离系数较大的电子注入乘法区域，从而降低APD中的噪声。
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公开(公告)号：US4682196A
公开(公告)日：1987-07-21
申请号：US806746
申请日：1985-12-09
IPC分类号： H01L29/205 , H01L31/0352 , H01L31/11 , H01L27/14 , H01L29/12
CPC分类号： H01L29/205 , H01L31/035281 , H01L31/11 , Y02E10/50
摘要： A semiconductor device, which is formed by a sequential lamination of a first semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3, a second semiconductor layer having a carrier concentration less than 10.sup.16 cm.sup.-3, a third semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3 and a thickness less than 300 .ANG., a fourth semiconductor layer having a carrier concentration less than 10.sup.16 cm.sup.-3, and a fifth semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3 and, in which the first and fifth semiconductor layers are the same in conductivity type and the third semiconductor layer is different in conductivity type from the fifth semiconductor layer. In accordance with the present invention, the energy gap of the third semiconductor layer is larger than the energy gaps of the second and fourth semiconductor layers. An annular region of a semi-insulating material or of the same conductivity type as that of the third semiconductor layer may be formed around an active region to extend from the fifth semiconductor layer to the second semiconductor layer.
摘要翻译： 一种半导体器件，其通过顺次层叠具有载流子浓度大于1017cm -3的第一半导体层，载流子浓度小于1016cm-3的第二半导体层，具有载流子浓度的第三半导体层 大于1017cm-3，厚度小于300，载流子浓度小于1016cm-3的第四半导体层和载流子浓度大于1017cm-3的第五半导体层，其中第一 并且第五半导体层的导电类型相同，并且第三半导体层的导电类型与第五半导体层不同。 根据本发明，第三半导体层的能隙大于第二和第四半导体层的能隙。 可以在有源区周围形成半绝缘材料或与第三半导体层相同的导电类型的环形区域，以从第五半导体层延伸到第二半导体层。
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公开(公告)号：US4660934A
公开(公告)日：1987-04-28
申请号：US710984
申请日：1985-03-12
CPC分类号： G03F7/095 , G02B5/1857 , G03F7/001 , Y10S359/90
摘要： A method for manufacturing diffraction grating, in which after forming, on a substrate, one of a negative type photoresist film (an N film) and a positive type photoresist film (a P film) to cover a first region A and the other of the negative type photoresist film and the positive type photoresist film, or the latter film on the former one to cover a second region B, the first region and the second region are subjected to two-beam interference exposure, thereby forming a diffraction grating in which corrugations in the first region and the second region are reverse in phase to each other, through utilization of characteristics of the negative type photoresist film and the positive type photoresist film. Another feature of the present invention resides in that after forming, on a substrate, a structure in which a negative type photoresist film (an N film) is formed to cover only a first region A and the negative type photoresist film is formed on a positive type photoresist film (a P film) to cover a second region B, the first region and the second region of the substrate are subjected to two-beam interference exposure, thereby forming a diffraction grating in which corrugations in the first region and the second region are reverse in phase to each other, through utilization of characteristics of the negative type photoresist film and the positive type photoresist film.
摘要翻译： 制造衍射光栅的方法，其中在基板上形成负型光致抗蚀剂膜（N膜）和正型光致抗蚀剂膜（P膜）之一以覆盖第一区域A和另一个 负型光致抗蚀剂膜和正型光致抗蚀剂膜，或者在前者的后者膜覆盖第二区域B，第一区域和第二区域受到双光束干涉曝光，从而形成衍射光栅，其中波纹 通过利用负型光致抗蚀剂膜和正型光致抗蚀剂膜的特性，在第一区域和第二区域中的相位彼此相反。 本发明的另一个特征在于，在基板上形成后，形成负型光致抗蚀剂膜（N膜）仅覆盖第一区域A并且负型光致抗蚀剂膜形成为阳性的结构 （P膜）覆盖第二区域B，对基板的第一区域和第二区域进行双光束干涉曝光，从而形成衍射光栅，其中第一区域和第二区域中的波纹 通过利用负型光致抗蚀剂膜和正型光致抗蚀剂膜的特性，彼此相反。
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公开(公告)号：US4573158A
公开(公告)日：1986-02-25
申请号：US699586
申请日：1985-02-08
申请人： Katsuyuki Utaka , Kazuo Sakai , Shigeyuki Akiba
发明人： Katsuyuki Utaka , Kazuo Sakai , Shigeyuki Akiba
IPC分类号： H01S5/00 , H01S5/06 , H01S5/0625 , H01S5/12 , H01S3/19
CPC分类号： H01S5/0625 , H01S5/0602 , H01S5/06255 , H01S5/12
摘要： A semiconductor laser of distributed feedback type, which is provided with a portion having periodic refractive index variations in the direction of light propagation in one of an active layer and a layer adjacent thereto and is caused to perform laser oscillation by injecting a current into the active layer portion. In accordance with the present invention, a current injection region having no periodic refractive index variations is formed on an extension of the portion having the periodic refractive index variations.
摘要翻译： 一种分布式反馈型半导体激光器，其具有在有源层和与其相邻的层之一上的光传播方向上具有周期性折射率变化的部分，并且通过向有源层注入电流而进行激光振荡 层部分。 根据本发明，在具有周期性折射率变化的部分的延伸部上形成不具有周期性折射率变化的电流注入区域。
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公开(公告)号：US4918496A
公开(公告)日：1990-04-17
申请号：US213608
申请日：1988-06-30
CPC分类号： B82Y20/00 , H01S5/34313 , H01S2302/00 , H01S5/0206 , H01S5/3201 , H01S5/3218 , H01S5/3403 , H01S5/3409 , H01S5/34306
摘要： An infrared emitting device for use in the 2 to 3 .mu.m region, which is low in the threshold current and operates over a wide temperature range. In accordance with the present invention, an InP substrate is employed in place of GaSb substrate and InAs substrate heretofore employed for the 2 to 3 .mu.m infrared semiconductor lasers. Moreover, as active layers or clad layers, one of more semiconductor layers are employed which differ in lattice constant from the InP substrate.
摘要翻译： 一种用于2〜3μm区域的红外发射装置，其阈值电流低，在宽温度范围内工作。 根据本发明，使用InP衬底代替用于2至3μm红外半导体激光器的GaSb衬底和InAs衬底。 此外，作为有源层或覆层，采用与InP衬底的晶格常数不同的多个半导体层之一。
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公开(公告)号：US4826291A
公开(公告)日：1989-05-02
申请号：US882588
申请日：1986-07-07
CPC分类号： G03F7/001 , G02B5/1857 , Y10S359/90
摘要： A method is disclosed for manufacturing a diffraction grating formed by corrugations reversed in phase between a first region and a second region through use of two kinds of photoresists of opposite photosensitive characteristics. An isolation film is introduced for preventing the photoresists from getting mixed with each other, permitting the combined use of any photoresists. A step may be further included in which the isolation film is deposited on one of two kinds of photoresist films in at least one of a first region and a second region, is subjected to two-beam interference exposure, is removed and then a degraded layer, which is formed in the surface of the above said one kind of photoresist film during the deposition of the isolation film, is removed.
摘要翻译： 公开了一种用于制造通过使用具有相反感光特性的两种光致抗蚀剂在第一区域和第二区域之间相位相反的波纹形成的衍射光栅的方法。 引入隔离膜以防止光致抗蚀剂彼此混合，允许组合使用任何光致抗蚀剂。 可以进一步包括步骤，其中隔离膜沉积在第一区域和第二区域中的至少一个中的两种光致抗蚀剂膜中的一种上经受双光束干涉曝光，然后去除劣化层 ，在隔离膜沉积期间形成在上述一种光致抗蚀剂膜的表面上。
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