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    CORE-SHELL NANOPARTICLES AND PROCESS FOR PRODUCING THE SAME
    41.
    发明申请
    CORE-SHELL NANOPARTICLES AND PROCESS FOR PRODUCING THE SAME 有权
    核壳纳米粒子及其制造方法

    公开(公告)号：US20100215852A1

    公开(公告)日：2010-08-26

    申请号：US12391543

    申请日：2009-02-24

    申请人： Michael Paul Rowe ,  Minjuan Zhang

    发明人： Michael Paul Rowe ,  Minjuan Zhang

    IPC分类号： B01J13/04

    CPC分类号： B01J13/04 ,  B01J13/02

    摘要： A process for forming thermoelectric nanoparticles includes the steps of a) forming a core material micro-emulsion, b) adding at least one shell material to the core material micro-emulsion forming composite thermoelectric nanoparticles having a core and shell structure.

    摘要翻译： 形成热电纳米颗粒的方法包括以下步骤：a）形成芯材微乳液，b）将至少一种壳材料加入到具有核和壳结构的芯材微乳液形成复合热电纳米颗粒中。

    METAL TELLURIDE NANOCRYSTALS AND SYNTHESIS THEREOF
    46.
    发明申请
    METAL TELLURIDE NANOCRYSTALS AND SYNTHESIS THEREOF 失效
    金属陶瓷纳米晶及其合成

    公开(公告)号：US20080036101A1

    公开(公告)日：2008-02-14

    申请号：US11464265

    申请日：2006-08-14

    申请人： Qiangfeng Xiao ,  Yunfeng Lu ,  Minjuan Zhang

    发明人： Qiangfeng Xiao ,  Yunfeng Lu ,  Minjuan Zhang

    IPC分类号： H01L21/00

    CPC分类号： C01B19/007 ,  B82Y30/00 ,  C01B19/002 ,  C01P2002/72 ,  C01P2004/04 ,  C01P2004/64 ,  C04B35/547 ,  C04B35/6263 ,  C04B35/6325 ,  C04B35/636 ,  C04B35/6455 ,  C04B2235/3293 ,  C04B2235/3296 ,  C04B2235/3298 ,  C04B2235/449 ,  C04B2235/604 ,  C04B2235/6581 ,  C04B2235/661 ,  C04B2235/77 ,  C04B2235/781

    摘要： A process for synthesizing a metal telluride is provided that includes the dissolution of a metal precursor in a solvent containing a ligand to form a metal-ligand complex soluble in the solvent. The metal-ligand complex is then reacted with a telluride-containing reagent to form metal telluride domains having a mean linear dimension of from 2 to 40 nanometers. NaHTe represents a well-suited telluride reagent. A composition is provided that includes a plurality of metal telluride crystalline domains (PbTe)1-x-y(SnTe)x(Bi2Te3)y   (I) having a mean linear dimension of from 2 to 40 nanometers inclusive where x is between 0 and 1 inclusive and y is between 0 and 1 inclusive with the proviso that x+y is less than or equal to 1. Each of the metal telluride crystalline domains has a surface passivated with a saccharide moiety or a polydentate carboxylate. A densified mass having a density of greater than 95% of the theoretical density includes a plurality of lead telluride, tin telluride, bismuth telluride, or a combination thereof of domains having a mean linear dimension of from 2 to 40 nanometers inclusive that have been subjected to hot isotactic pressing.

    摘要翻译： 提供了合成金属碲化物的方法，其包括将金属前体溶解在含有配体的溶剂中以形成可溶于溶剂的金属 - 配体络合物。 然后将金属 - 配体络合物与含碲化物的试剂反应以形成平均直线尺寸为2-40纳米的金属碲化物畴。 NaHTe代表一种非常适合的碲化物试剂。 提供了一种组合物，其包括多个金属碲化物晶畴<？in-line-formula description =“In-line Formulas”end =“lead”→>（PbTe）1-xy ）（I）<βin-line-formula description =“（”1“）< 平均线性尺寸为2至40纳米，其中x在0和1之间，其中x在0和1之间，其中y在0和1之间，其中条件是x + y小于 或等于1.金属碲化物结晶域中的每一个具有用糖部分或多齿羧酸酯钝化的表面。 具有大于理论密度的95％的密度的致密物质包括多个引线碲化物，碲化锡，碲化铋或其具有平均线性尺寸为2至40纳米的畴的组合，其已经经受 到热等压挤压。

    Nanostructured bulk thermoelectric material
    47.
    发明申请
    Nanostructured bulk thermoelectric material 有权
    纳米结构体热电材料

    公开(公告)号：US20060118158A1

    公开(公告)日：2006-06-08

    申请号：US11120731

    申请日：2005-05-03

    申请人： Minjuan Zhang ,  Yunfeng Lu

    发明人： Minjuan Zhang ,  Yunfeng Lu

    IPC分类号： H01L35/34 ,  H01L35/30 ,  H01L35/28 ,  H01L37/00

    CPC分类号： H01L35/34 ,  C02F1/02 ,  C02F2103/02 ,  H01L35/16 ,  H01L35/26

    摘要： A thermoelectric material comprises two or more components, at least one of which is a thermoelectric material. The first component is nanostructured, for example as an electrically conducting nanostructured network, and can include nanowires, nanoparticles, or other nanostructures of the first component. The second component may comprise an electrical insulator, such as an inorganic oxide, other electrical insulator, other low thermal conductivity material, voids, air-filled gaps, and the like. Additional components may be included, for example to improve mechanical properties. Quantum size effects within the nanostructured first component can advantageously modify the thermoelectric properties of the first component. In other examples, the second component may be a thermoelectric material, and additional components may be included.

    摘要翻译： 热电材料包括两种或多种组分，其中至少一种是热电材料。 第一组分是纳米结构的，例如作为导电纳米结构网络，并且可以包括第一组分的纳米线，纳米颗粒或其他纳米结构。 第二部件可以包括电绝缘体，例如无机氧化物，其它电绝缘体，其它低导热材料，空隙，充满空气的间隙等。 可以包括另外的组分，例如以改善机械性能。 在纳米结构化的第一组分内的量子尺寸效应可以有利地改变第一组分的热电性质。 在其它实例中，第二组分可以是热电材料，并且可以包括另外的组分。

    Method and system for forming copper thin film
    48.
    发明授权
    Method and system for forming copper thin film 有权
    形成铜薄膜的方法和系统

    公开(公告)号：US06726954B2

    公开(公告)日：2004-04-27

    申请号：US09874066

    申请日：2001-06-06

    申请人： Minjuan Zhang ,  Akiko Kobayashi ,  Toshiaki Sasaki ,  Susumu Akiyama ,  Atsushi Sekiguchi

    发明人： Minjuan Zhang ,  Akiko Kobayashi ,  Toshiaki Sasaki ,  Susumu Akiyama ,  Atsushi Sekiguchi

    IPC分类号： C23C1618

    CPC分类号： C23C16/45523 ,  C23C16/18 ,  C23C16/4402 ,  H01L21/28556

    摘要： In a method and a system for forming a copper thin film in which a raw material gas is introduced into a substrate processing chamber storing a substrate and being under a reduced pressure to form a copper thin film on the substrate, an addition gas is introduced into the substrate processing chamber in addition to the raw material gas at the initial stage of deposition. Thereafter, the introduction of the addition gas is stopped, while the introduction of the raw material gas is continued. Alternatively, an addition gas is introduced into the substrate processing chamber before the start of the deposition process, and the addition gas is introduced into the substrate processing chamber in addition to the raw material gas at the initial stage of deposition. Thereafter, the introduction of the addition gas is stopped, while the introduction of the raw material gas is continued.

    摘要翻译： 在形成铜薄膜的方法和系统中，其中原料气体被引入存储基板并在减压下的基板处理室中，以在基板上形成铜薄膜，将加成气体引入 基板处理室除了在沉积的初始阶段的原料气体之外。 此后，停止引入加料气体，同时继续引入原料气体。 或者，在开始沉积处理之前，将添加气体引入到基板处理室中，并且在沉积的初始阶段除了原料气体之外还将添加气体引入基板处理室。 此后，停止引入加料气体，同时继续引入原料气体。