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    Methods of forming germanium-antimony-tellurium materials and chalcogenide materials
    41.
    发明授权
    Methods of forming germanium-antimony-tellurium materials and chalcogenide materials 有权
    形成锗 - 锑 - 碲材料和硫族化物材料的方法

    公开(公告)号：US09065048B2

    公开(公告)日：2015-06-23

    申请号：US14273124

    申请日：2014-05-08

    Applicant: Micron Technology, Inc.

    Inventor： Eugene P. Marsh

    IPC: H01L21/00 ,  H01L45/00 ,  C23C16/30 ,  C23C16/455

    CPC classification number: H01L45/1616 ,  C23C16/305 ,  C23C16/45531 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144

    Abstract: Methods of forming a material include exposing a substrate to a first germanium-containing compound and a second, different germanium-containing compound; exposing the substrate to a first antimony-containing compound and a second, different antimony-containing compound; and exposing the substrate to a first tellurium-containing compound and a second, different tellurium-containing compound. Methods of forming chalcogenide materials include exposing a substrate to a first precursor comprising a reactive precursor of a first metal and a co-reactive precursor of the first metal, the reactive precursor and the co-reactive precursor each having at least one ligand coordinated to an atom of the first metal, wherein the at least one ligand of the co-reactive precursor is different from the at least one ligand of the reactive precursor. The substrate is also exposed to a reactive antimony precursor and a co-reactive antimony precursor and to a reactive tellurium precursor and a co-reactive tellurium precursor.

    Abstract translation: 形成材料的方法包括将基底暴露于第一含锗化合物和第二种不同的含锗化合物; 将基底暴露于第一含锑化合物和第二种不同的含锑化合物; 并将基底暴露于第一含碲化合物和第二种不同的含碲化合物。 形成硫族化物材料的方法包括将底物暴露于第一前体，该第一前体包含第一金属的反应性前体和第一金属的共反应性前体，反应性前体和共反应性前体各自具有至少一个与 所述第一金属的原子，其中所述辅助反应性前体的所述至少一种配体不同于所述反应性前体的所述至少一种配体。 底物还暴露于反应性锑前体和共反应性锑前体以及反应性碲前体和共反应性碲前体。

    Horizontally oriented and vertically stacked memory cells
    42.
    发明授权
    Horizontally oriented and vertically stacked memory cells 有权
    水平方向和垂直堆叠的存储单元

    公开(公告)号：US09024283B2

    公开(公告)日：2015-05-05

    申请号：US13759576

    申请日：2013-02-05

    Applicant: Micron Technology, Inc.

    Inventor： Timothy A. Quick ,  Eugene P. Marsh

    IPC: H01L29/02 ,  H01L45/00 ,  H01L27/24

    CPC classification number: H01L27/2481 ,  H01L27/2463 ,  H01L27/249 ,  H01L45/04 ,  H01L45/06 ,  H01L45/122 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/14 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1625 ,  H01L45/1675

    Abstract: Horizontally oriented and vertically stacked memory cells are described herein. One or more method embodiments include forming a vertical stack having a first insulator material, a first memory cell material on the first insulator material, a second insulator material on the first memory cell material, a second memory cell material on the second insulator material, and a third insulator material on the second memory cell material, forming an electrode adjacent a first side of the first memory cell material and a first side of the second memory cell material, and forming an electrode adjacent a second side of the first memory cell material and a second side of the second memory cell material.

    Abstract translation: 本文描述了水平方向和垂直堆叠的存储器单元。 一个或多个方法实施例包括形成具有第一绝缘体材料的垂直堆叠，第一绝缘体材料上的第一存储单元材料，第一存储单元材料上的第二绝缘体材料，第二绝缘体材料上的第二存储单元材料，以及 在所述第二存储单元材料上的第三绝缘体材料，形成邻近所述第一存储单元材料的第一侧的电极和所述第二存储单元材料的第一侧，以及在所述第一存储单元材料的第二侧附近形成电极，以及 第二存储单元材料的第二侧。

    METHODS OF FORMING GERMANIUM-ANTIMONY-TELLURIUM MATERIALS AND CHALCOGENIDE MATERIALS
    43.
    发明申请
    METHODS OF FORMING GERMANIUM-ANTIMONY-TELLURIUM MATERIALS AND CHALCOGENIDE MATERIALS 有权
    形成锗 - 抗氧化锆材料和氯化铝材料的方法

    公开(公告)号：US20140242748A1

    公开(公告)日：2014-08-28

    申请号：US14273124

    申请日：2014-05-08

    Applicant: Micron Technology, Inc.

    Inventor： Eugene P. Marsh

    IPC: H01L45/00

    CPC classification number: H01L45/1616 ,  C23C16/305 ,  C23C16/45531 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144

    Abstract: Methods of forming a material include exposing a substrate to a first germanium-containing compound and a second, different germanium-containing compound; exposing the substrate to a first antimony-containing compound and a second, different antimony-containing compound; and exposing the substrate to a first tellurium-containing compound and a second, different tellurium-containing compound. Methods of forming chalcogenide materials include exposing a substrate to a first precursor comprising a reactive precursor of a first metal and a co-reactive precursor of the first metal, the reactive precursor and the co-reactive precursor each having at least one ligand coordinated to an atom of the first metal, wherein the at least one ligand of the co-reactive precursor is different from the at least one ligand of the reactive precursor. The substrate is also exposed to a reactive antimony precursor and a co-reactive antimony precursor and to a reactive tellurium precursor and a co-reactive tellurium precursor.

    Abstract translation: 形成材料的方法包括将基底暴露于第一含锗化合物和第二种不同的含锗化合物; 将基底暴露于第一含锑化合物和第二种不同的含锑化合物; 并将基底暴露于第一含碲化合物和第二种不同的含碲化合物。 形成硫族化物材料的方法包括将底物暴露于第一前体，该第一前体包含第一金属的反应性前体和第一金属的共反应性前体，反应性前体和共反应性前体各自具有至少一个与 所述第一金属的原子，其中所述辅助反应性前体的所述至少一种配体不同于所述反应性前体的所述至少一种配体。 底物还暴露于反应性锑前体和共反应性锑前体以及反应性碲前体和共反应性碲前体。

    METHODS OF FORMING A METAL TELLURIDE MATERIAL, RELATED METHODS OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE, AND RELATED SEMICONDUCTOR DEVICE STRUCTURES
    44.
    发明申请
    METHODS OF FORMING A METAL TELLURIDE MATERIAL, RELATED METHODS OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE, AND RELATED SEMICONDUCTOR DEVICE STRUCTURES 有权
    形成金属陶瓷材料的方法，形成半导体器件结构的相关方法以及相关的半导体器件结构

    公开(公告)号：US20140227863A1

    公开(公告)日：2014-08-14

    申请号：US14252959

    申请日：2014-04-15

    Applicant: Micron Technology, Inc.

    Inventor： Timothy A. Quick ,  Stefan Uhlenbrock ,  Eugene P. Marsh

    IPC: H01L21/02

    CPC classification number: H01L21/02568 ,  C23C16/305 ,  C23C16/45525 ,  H01L21/0237 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02614 ,  H01L21/0262 ,  H01L31/0324

    Abstract: Accordingly, a method of forming a metal chalcogenide material may comprise introducing at least one metal precursor and at least one chalcogen precursor into a chamber comprising a substrate, the at least one metal precursor comprising an amine or imine compound of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid, and the at least one chalcogen precursor comprising a hydride, alkyl, or aryl compound of sulfur, selenium, or tellurium. The at least one metal precursor and the at least one chalcogen precursor may be reacted to form a metal chalcogenide material over the substrate. A method of forming a metal telluride material, a method of forming a semiconductor device structure, and a semiconductor device structure are also described.

    Abstract translation: 因此，形成金属硫族化物材料的方法可以包括将至少一种金属前体和至少一种硫属前体引入包含基底的室中，所述至少一种金属前体包含碱金属的胺或亚胺化合物，碱 土金属，过渡金属，后过渡金属或准金属，以及所述至少一种硫族元素前体包含硫，硒或碲的氢化物，烷基或芳基化合物。 所述至少一种金属前体和所述至少一种硫属前体可以反应以在所述基底上形成金属硫族化物材料。 还描述了形成金属碲化物材料的方法，形成半导体器件结构的方法和半导体器件结构。

    Resistive memory having confined filament formation
    48.
    发明授权
    Resistive memory having confined filament formation 有权

    公开(公告)号：US10153431B2

    公开(公告)日：2018-12-11

    申请号：US15661351

    申请日：2017-07-27

    Applicant: Micron Technology, Inc.

    Inventor： Eugene P. Marsh ,  Jun Liu

    IPC: H01L45/00

    Abstract: Resistive memory having confined filament formation is described herein. One or more method embodiments include forming an opening in a stack having a silicon material and an oxide material on the silicon material, and forming an oxide material in the opening adjacent the silicon material, wherein the oxide material formed in the opening confines filament formation in the resistive memory cell to an area enclosed by the oxide material formed in the opening.

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