公开(公告)号：US10424365B2

公开(公告)日：2019-09-24

申请号：US16375073

申请日：2019-04-04

Applicant: Micron Technology, Inc.

Inventor： George B. Raad ,  Jonathan S. Parry ,  James S. Rehmeyer ,  Timothy B. Cowles

IPC: G11C7/00 ,  G11C11/406

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices in which multiple counters are provided to permit memory refresh commands greater freedom in targeting subsets of the memory device for data refresh operations. In one embodiment, a memory device is provided, comprising a plurality of memory banks, and circuitry configured to (i) store a plurality of values, each of the plurality of values corresponding to one of the plurality of memory banks; (ii) refresh first data stored in a first one of the plurality of memory banks; and (iii) update a first one of the plurality of values corresponding to the first one of the plurality of memory banks based at least in part on refreshing the first data.

公开(公告)号：US20190228817A1

公开(公告)日：2019-07-25

申请号：US16375105

申请日：2019-04-04

Applicant: Micron Technology, Inc.

Inventor： George B. Raad ,  Jonathan S. Parry ,  James S. Rehmeyer ,  Timothy B. Cowles

IPC: G11C11/406

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices in which multiple counters are provided to permit memory refresh commands greater freedom in targeting subsets of the memory device for data refresh operations. In one embodiment, a memory device is provided, comprising a plurality of memory banks, and circuitry configured to (i) store a plurality of values, each of the plurality of values corresponding to one of the plurality of memory banks; (ii) refresh first data stored in a first one of the plurality of memory banks; and (iii) update a first one of the plurality of values corresponding to the first one of the plurality of memory banks based at least in part on refreshing the first data.

公开(公告)号：US09019785B2

公开(公告)日：2015-04-28

申请号：US14031432

申请日：2013-09-19

Applicant: Micron Technology, Inc.

Inventor： Timothy B. Cowles ,  Steven M. Bodily

IPC: G11C7/10

CPC classification number: G11C7/065 ,  G11C5/06 ,  G11C7/06 ,  G11C7/08 ,  G11C7/1006 ,  G11C7/1036 ,  G11C7/22 ,  G11C8/10 ,  G11C11/4091 ,  G11C19/00 ,  G11C2207/002 ,  G11C2207/005

Abstract: The present disclosure includes apparatuses and methods related to data shifting. An example apparatus comprises a first memory cell coupled to a first sense line of an array, a first isolation device located between the first memory cell and first sensing circuitry corresponding thereto, and a second isolation device located between the first memory cell and second sensing circuitry corresponding to a second sense line. The first and the second isolation devices are operated to shift data in the array without transferring the data via an input/output line of the array.

Abstract translation: 本公开包括与数据移位相关的装置和方法。 示例性设备包括耦合到阵列的第一感测线的第一存储器单元，位于第一存储器单元和与其对应的第一感测电路之间的第一隔离器件，以及位于第一存储器单元和第二感测电路之间的第二隔离器件 对应于第二感测线。 操作第一和第二隔离装置以移动阵列中的数据，而不经由阵列的输入/输出线传送数据。

公开(公告)号：US20150078108A1

公开(公告)日：2015-03-19

申请号：US14031432

申请日：2013-09-19

Applicant: Micron Technology, Inc.

Inventor： Timothy B. Cowles ,  Steven M. Bodily

IPC: G11C7/10

CPC classification number: G11C7/065 ,  G11C5/06 ,  G11C7/06 ,  G11C7/08 ,  G11C7/1006 ,  G11C7/1036 ,  G11C7/22 ,  G11C8/10 ,  G11C11/4091 ,  G11C19/00 ,  G11C2207/002 ,  G11C2207/005

Abstract: The present disclosure includes apparatuses and methods related to data shifting. An example apparatus comprises a first memory cell coupled to a first sense line of an array, a first isolation device located between the first memory cell and first sensing circuitry corresponding thereto, and a second isolation device located between the first memory cell and second sensing circuitry corresponding to a second sense line. The first and the second isolation devices are operated to shift data in the array without transferring the data via an input/output line of the array.

Abstract translation: 本公开包括与数据移位相关的装置和方法。 示例性设备包括耦合到阵列的第一感测线的第一存储器单元，位于第一存储器单元和与其对应的第一感测电路之间的第一隔离器件，以及位于第一存储器单元和第二感测电路之间的第二隔离器件 对应于第二感测线。 操作第一和第二隔离装置以移动阵列中的数据，而不经由阵列的输入/输出线传送数据。

公开(公告)号：US20130329510A1

公开(公告)日：2013-12-12

申请号：US13959395

申请日：2013-08-05

Applicant: Micron Technology, Inc.

Inventor： Brent Keeth ,  Chris G. Martin ,  Troy A. Manning ,  Joe M. Jeddeloh ,  Timothy B. Cowles ,  Jim Rehmeyer ,  Paul A. LaBerge

IPC: G11C29/04

CPC classification number: G06F12/08 ,  G06F12/10 ,  G11C5/025 ,  G11C29/04 ,  G11C29/18 ,  G11C29/76 ,  G11C29/78 ,  G11C29/808 ,  G11C29/812 ,  G11C29/883 ,  H01L2224/0554 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/17181 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: Various embodiments include apparatus, systems, and methods having multiple dice arranged in a stack in which a defective cell may be replaced by a spare cell on the same die or a different die. Other embodiments are described.

公开(公告)号：US11900983B2

公开(公告)日：2024-02-13

申请号：US17315654

申请日：2021-05-10

Applicant: Micron Technology, Inc.

Inventor： George B. Raad ,  Jonathan S. Parry ,  James S. Rehmeyer ,  Timothy B. Cowles

IPC: G11C7/00 ,  G11C11/406 ,  G11C11/00 ,  G11C13/00 ,  G11C11/22 ,  G11C11/16

CPC classification number: G11C11/40618 ,  G11C11/005 ,  G11C11/1675 ,  G11C11/2275 ,  G11C13/0033 ,  G11C13/0069

Abstract: Provided herein are memory devices, systems including memory devices, and methods of operating memory devices in which multiple counters are provided to permit memory refresh commands greater freedom in targeting subsets of the memory device for data refresh operations. In one embodiment, a memory device is provided, comprising a plurality of memory banks, and circuitry configured to (i) store a plurality of values, each of the plurality of values corresponding to one of the plurality of memory banks; (ii) refresh first data stored in a first one of the plurality of memory banks; and (iii) update a first one of the plurality of values corresponding to the first one of the plurality of memory banks based at least in part on refreshing the first data.

公开(公告)号：US20230087329A1

公开(公告)日：2023-03-23

申请号：US18053201

申请日：2022-11-07

Applicant: Micron Technology, Inc.

Inventor： Timothy B. Cowles ,  George B. Raad ,  James S. Rehmeyer ,  Jonathan S. Parry

IPC: G11C16/14 ,  G11C16/30 ,  G11C17/16 ,  G11C17/18 ,  G11C16/22 ,  G11C13/00 ,  G11C11/16 ,  G11C11/22 ,  G11C16/08

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices and systems are provided, in which at least a subset of a non-volatile memory array is configured to behave as a volatile memory by erasing or degrading data in the event of a changed power condition such as a power-loss event, a power-off event, or a power-on event. In one embodiment of the present technology, a memory device is provided, comprising a non-volatile memory array, and circuitry configured to store one or more addresses of the non-volatile memory array, to detect a changed power condition of the memory device, and to erase or degrade data at the one or more addresses in response to detecting the changed power condition.

公开(公告)号：US11495299B2

公开(公告)日：2022-11-08

申请号：US17339846

申请日：2021-06-04

Applicant: Micron Technology, Inc.

Inventor： Timothy B. Cowles ,  George B. Raad ,  James S. Rehmeyer ,  Jonathan S. Parry

IPC: G11C16/14 ,  G11C16/30 ,  G11C17/16 ,  G11C17/18 ,  G11C16/22 ,  G11C13/00 ,  G11C11/16 ,  G11C11/22 ,  G11C16/08

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices and systems are provided, in which at least a subset of a non-volatile memory array is configured to behave as a volatile memory by erasing or degrading data in the event of a changed power condition such as a power-loss event, a power-off event, or a power-on event. In one embodiment of the present technology, a memory device is provided, comprising a non-volatile memory array, and circuitry configured to store one or more addresses of the non-volatile memory array, to detect a changed power condition of the memory device, and to erase or degrade data at the one or more addresses in response to detecting the changed power condition.

公开(公告)号：US20210335394A1

公开(公告)日：2021-10-28

申请号：US17372329

申请日：2021-07-09

Applicant: Micron Technology, Inc.

Inventor： Jonathan S. Parry ,  George B. Raad ,  James S. Rehmeyer ,  Timothy B. Cowles

IPC: G11C5/14 ,  G11C7/22

Abstract: A memory device is provided. The memory device comprises a memory array and circuitry configured to determine one or more settings for the memory array corresponding to a powered-on state of the memory device, to store the one or more settings in a non-volatile memory location, and in response to returning to the powered-on state from a reduced-power state, to read the one or more settings from the non-volatile memory location.

公开(公告)号：US20210264971A1

公开(公告)日：2021-08-26

申请号：US17315654

申请日：2021-05-10

Applicant: Micron Technology, Inc.

Inventor： George B. Raad ,  Jonathan S. Parry ,  James S. Rehmeyer ,  Timothy B. Cowles

IPC: G11C11/406 ,  G11C11/00 ,  G11C13/00 ,  G11C11/22 ,  G11C11/16

Abstract: Provided herein are memory devices, systems including memory devices, and methods of operating memory devices in which multiple counters are provided to permit memory refresh commands greater freedom in targeting subsets of the memory device for data refresh operations. In one embodiment, a memory device is provided, comprising a plurality of memory banks, and circuitry configured to (i) store a plurality of values, each of the plurality of values corresponding to one of the plurality of memory banks; (ii) refresh first data stored in a first one of the plurality of memory banks; and (iii) update a first one of the plurality of values corresponding to the first one of the plurality of memory banks based at least in part on refreshing the first data.