公开(公告)号：US06601452B2

公开(公告)日：2003-08-05

申请号：US09866792

申请日：2001-05-30

申请人： Yuichiro Murata ,  Inao Toyoda ,  Yasutoshi Suzuki

发明人： Yuichiro Murata ,  Inao Toyoda ,  Yasutoshi Suzuki

IPC分类号： G01L916

CPC分类号： G01L9/0042 ,  B81B3/0075 ,  B81B2201/0264 ,  B81B2203/0127

摘要： A semiconductor pressure sensor has a recess formed on a semiconductor substrate. The recess has a sidewall, a bottom wall that serves as a diaphragm for detecting a pressure, and a corner portion provided between the sidewall and the bottom wall and having a radius of curvature R. The radius of curvature R satisfies a formula of: R/S=526·(d/S)2−0.037·(d/S)+a1, where S is an area of the diaphragm, d is a thickness of the diaphragm, and a1 is in a range of 9.6×10−7 to 16×10−7 inclusive.

摘要翻译： 半导体压力传感器具有形成在半导体衬底上的凹部。 凹部具有侧壁，作为用于检测压力的隔膜的底壁，以及设置在侧壁和底壁之间并具有曲率半径R的角部。曲率半径R满足以下公式：其中 S是隔膜的面积，d是隔膜的厚度，a1在9.6×10-7至16×10-7的范围内。

公开(公告)号：US06584852B2

公开(公告)日：2003-07-01

申请号：US10176590

申请日：2002-06-24

申请人： Yasutoshi Suzuki ,  Seiichiro Ishio ,  Tetsuo Fujii ,  Keiichi Shimaoka ,  Hirofumi Funahashi

发明人： Yasutoshi Suzuki ,  Seiichiro Ishio ,  Tetsuo Fujii ,  Keiichi Shimaoka ,  Hirofumi Funahashi

IPC分类号： G01L912

CPC分类号： G01L9/0073

摘要： An electrical capacitance pressure sensor has a lower electrode, a movable electrode, and an upper electrode. A first cavity portion is formed between the lower electrode and the movable electrode. A second cavity portion is formed between the upper electrode and the movable electrode. The substrate has an opening portion that penetrates the substrate from the first surface to the second surface thereof. The lower electrode has at least one first window portion that penetrates the lower electrode from the side of the substrate to the side of the first cavity portion and communicates the cavity portion to the opening portion of the substrate. The upper electrode has at least one second window portion that penetrates the upper electrode from the side of the cavity portion to the outside thereof to communicate the cavity portion with the outside.

摘要翻译： 电容式压力传感器具有下电极，可动电极和上电极。 第一空腔部分形成在下电极和可动电极之间。 第二空腔部分形成在上电极和可动电极之间。 衬底具有从第一表面到第二表面穿透衬底的开口部分。 下电极具有至少一个第一窗口部分，其从基板的侧面到第一空腔部分的侧面穿透下电极，并且将空腔部分连通到基板的开口部分。 上电极具有至少一个第二窗口部分，其从空腔部分的侧面向外部贯穿上部电极，以将空腔部分与外部连通。

公开(公告)号：US06521966B1

公开(公告)日：2003-02-18

申请号：US09547457

申请日：2000-04-12

申请人： Seiichiro Ishio ,  Inao Toyoda ,  Yasutoshi Suzuki

发明人： Seiichiro Ishio ,  Inao Toyoda ,  Yasutoshi Suzuki

IPC分类号： H01L2982

CPC分类号： G01L19/147 ,  H01L2224/48091 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/01068 ,  H01L2924/00014

摘要： A semiconductor strain sensor in which a sensor element for detecting a strain signal is mounted in a resin package member, which can restrain a creep stress of the package member from affecting to the sensor element. A semiconductor strain sensor is provided with a lead frame integrally molded with a resin package member, and a sensor chip made of silicon. The sensor chip is mounted on one surface of an element mounting portion of the lead frame, and is capable of externally outputting electric signal via a wire in accordance with strain when pressure is applied. An opening portion is provided in the package member, so that the entire area of another surface of the lead frame, where positions beneath the sensor chip, is non-contacted with the package member. Since another surface of the lead frame is non-contacted with the package member at the opening portion, even if the creep occurs in the package member, it can prevent stress (creep stress) undergone in accordance with the creep deformation from being transferred to the sensor chip.

摘要翻译： 一种半导体应变传感器，其中用于检测应变信号的传感器元件安装在树脂封装构件中，其可以抑制封装构件的蠕变应力对传感器元件的影响。 半导体应变传感器设置有与树脂封装构件一体模制的引线框架和由硅制成的传感器芯片。 传感器芯片安装在引线框架的元件安装部分的一个表面上，并且能够在施加压力时根据应变通过导线从外部输出电信号。 开口部分设置在封装构件中，使得引线框架的另一表面的位于传感器芯片下方的位置的整个区域与封装构件不接触。 由于引线框架的另一表面在开口部处与封装构件不接触，所以即使在封装构件中发生蠕变，也可以防止根据蠕变变形而发生的应力（蠕变应力）被转移到 传感器芯片。

公开(公告)号：US6069378A

公开(公告)日：2000-05-30

申请号：US985043

申请日：1997-12-04

申请人： Inao Toyoda ,  Yasutoshi Suzuki ,  Keijiro Inoue

发明人： Inao Toyoda ,  Yasutoshi Suzuki ,  Keijiro Inoue

IPC分类号： H01L27/14 ,  H01L27/144 ,  H01L31/10 ,  H01L31/062 ,  H01L31/0203 ,  H01L31/0232 ,  H01L31/113

CPC分类号： H01L27/1443 ,  Y10T428/19 ,  Y10T428/236

摘要： A photo diode and a signal processing circuit are formed on a silicon substrate. The signal processing circuit comprises a PNP transistor and an NPN transistor. A region of the signal processing circuit on the silicon substrate is covered by an aluminum thin film functioning as a shielding film. A covered distance L(.mu.m) is defined as an overhang of the aluminum thin film from the edge of the PNP transistor, and is determined based on a ratio of a minimum current of the PNP transistor, which induces malfunction in the signal processing circuit under the solar radiation, to a current generated in the circuit element when subjected to the solar radiation without the aluminum thin film.

摘要翻译： 在硅衬底上形成光电二极管和信号处理电路。 信号处理电路包括PNP晶体管和NPN晶体管。 硅衬底上的信号处理电路的区域被用作屏蔽膜的铝薄膜覆盖。 覆盖距离L（μm）被定义为来自PNP晶体管的边缘的铝薄膜的突出端，并且基于PNP晶体管的最小电流的比率来确定，该PNP晶体管在信号处理电路中引起故障 在太阳辐射下，当受到没有铝薄膜的太阳辐射时在电路元件中产生的电流。

公开(公告)号：US5779918A

公开(公告)日：1998-07-14

申请号：US800325

申请日：1997-02-14

申请人： Keijiro Inoue ,  Inao Toyoda ,  Yasutoshi Suzuki

发明人： Keijiro Inoue ,  Inao Toyoda ,  Yasutoshi Suzuki

IPC分类号： H01L27/144 ,  H01L21/00 ,  B44C1/22

CPC分类号： H01L27/1443

摘要： A photoelectric transfer device having a light receiving element and a signal processing circuit are formed in a semiconductor substrate, a silicon oxide film is formed on the light receiving element, a first aluminum thin film is deposited on the silicon substrate, and the first aluminum thin film is patterned to make a wire connected with the signal processing circuit and a protective film placed on the silicon oxide film. Thereafter, an inter-layer insulating film is deposited on the silicon substrate while covering the protective film, a portion of the inter-layer insulating film placed on the protective film is etched and removed, a second aluminum thin film is deposited on the inter-layer insulating film and the protective film, and a portion of the second aluminum thin film placed on the protective film and the protective film are successively etched and removed. Because the inter-layer insulating film placed above the light receiving element is removed, an insulating film placed on the light receiving element is not thinned, so that sensitivity of the photoelectric transfer device can be improved. Also, because the protective film is arranged on the silicon oxide film when the portion of the inter-layer insulating film is etched, the silicon oxide film is not etched, so that a film thickness of the silicon oxide film can be correctly set to a desired value.

摘要翻译： 在半导体衬底中形成具有光接收元件和信号处理电路的光电转移装置，在光接收元件上形成氧化硅膜，在硅衬底上沉积第一铝薄膜，并将第一铝薄片 图案化膜以形成与信号处理电路连接的电线和放置在氧化硅膜上的保护膜。 此后，在覆盖保护膜的同时，在硅衬底上沉积层间绝缘膜，蚀刻除去放置在保护膜上的层间绝缘膜的一部分，在第二铝薄膜上淀积第二铝薄膜， 层状绝缘膜和保护膜，并且依次蚀刻除去放置在保护膜和保护膜上的第二铝薄膜的一部分。 由于去除了置于光接收元件上方的层间绝缘膜，所以放置在光接收元件上的绝缘膜不会变薄，从而可以提高光电转移装置的灵敏度。 此外，由于当层间绝缘膜的部分被蚀刻时保护膜被布置在氧化硅膜上，因此氧化硅膜不被蚀刻，使得氧化硅膜的膜厚可以被正确地设定为 所需值。

公开(公告)号：US5471084A

公开(公告)日：1995-11-28

申请号：US94142

申请日：1993-07-30

申请人： Yasutoshi Suzuki ,  Kenichi Ao ,  Hirofumi Uenoyama ,  Hiroki Noguchi ,  Koji Eguchi ,  Ichiro Ito ,  Yoshimi Yoshino

发明人： Yasutoshi Suzuki ,  Kenichi Ao ,  Hirofumi Uenoyama ,  Hiroki Noguchi ,  Koji Eguchi ,  Ichiro Ito ,  Yoshimi Yoshino

IPC分类号： H01L43/08 ,  H01L27/22

CPC分类号： H01L43/08

摘要： This invention relates to a magnetoresistive element used for a magnetic sensor, etc. A ferromagnetic magnetoresistive element thin film is formed so as to be electrically connected to and so as to overlap the upper end portion of an aluminum wiring metal on a substrate. Through using a vacuum heat treatment with a temperature between 350.degree. and 450.degree. C., a Ni--Al-based alloy is formed at the overlapping portion. Therefore, even when a surface protection film of silicon nitride is subsequently formed by plasma CVD on the substrate, the alloy prevents the nitriding of the upper end portion of the aluminum wiring metal. Accordingly, the surface can be protected from moisture by the silicon nitride film without increasing the contact resistance between the magnetoresistive element thin film and the wiring metal. Instead of the Ni--Al-based alloy, other conductive metals such as TiW, TiN, Ti, Zr, or the like may be used. Also, the surface protection film may be a multi-layered film having a first film containing no nitrogen, such as a silicon oxide film, and a second film of silicon nitride film formed on the first film.

摘要翻译： PCT No.PCT / JP92 / 01581 Sec。 371日期：1993年7月30日 102（e）日期1993年7月30日PCT提交1992年12月3日PCT公布。 公开号WO93 / 11569 日本特许公报1993年6月10日。本发明涉及用于磁传感器等的磁阻元件。铁磁磁阻元件薄膜形成为与铝布线的上端部电连接并与其重叠 金属在基板上。 通过使用350〜450℃的真空热处理，在重叠部分形成Ni-Al系合金。 因此，即使在基板上随后通过等离子体CVD形成氮化硅的表面保护膜，合金也能防止铝布线金属的上端部的氮化。 因此，可以防止表面被氮化硅膜防止湿气，而不增加磁阻元件薄膜和布线金属之间的接触电阻。 可以使用TiW，TiN，Ti，Zr等其他导电性金属代替Ni-Al系合金。 此外，表面保护膜也可以是具有不含氮的第一膜的多层膜，例如氧化硅膜，以及形成在第一膜上的第二氮化硅膜。

公开(公告)号：US4866825A

公开(公告)日：1989-09-19

申请号：US137949

申请日：1987-12-28

申请人： Yasutoshi Suzuki

发明人： Yasutoshi Suzuki

IPC分类号： A44B19/58 ,  A44B19/60 ,  A41H37/06 ,  B21D53/50 ,  B23P23/00

CPC分类号： A44B19/58 ,  A44B19/60 ,  Y10S83/921 ,  Y10T29/49782 ,  Y10T29/5101 ,  Y10T29/5148 ,  Y10T29/53296 ,  Y10T29/53309

摘要： An apparatus for cutting down or reducing the length of a finished slide fastener includes a pilot pin disposed immediately adjacent to the rear end of an element clamper and spaced from the rear end of an element cutter by a distance which is equal to the sum of the element pitch of a row of coupling elements and at least a half of the diameter of a monofilament constituting the row of coupling elements. With the pilot pin thus arranged, a length of coupling elements can be removed smoothly without the occurance of draw of a half-cut coupling element. The apparatus also includes a stopper disposed rearwardly of a top end-stop applicator and engageable with a bottom end stop of the slide fastener for setting the length of reduction from the slide fastener.

摘要翻译： 用于减少或减小成品拉链的长度的装置包括一个引导销，该引导销紧邻元件夹持器的后端并与元件切割器的后端间隔一定距离，该距离等于 一排耦合元件的元件间距和构成该排耦合元件的单丝的直径的至少一半。 通过这样布置的引导销，可以平滑地移除长度的连接元件，而不会产生半切耦合元件的牵引。 该装置还包括设置在顶端止动施加器的后方的止动件，并可与拉链的底端止挡件接合，用于设定拉链的缩短长度。

公开(公告)号：US4747210A

公开(公告)日：1988-05-31

申请号：US072758

申请日：1987-07-13

申请人： Yasutoshi Suzuki

发明人： Yasutoshi Suzuki

IPC分类号： A44B19/44 ,  A44B19/64 ,  B23P19/04

CPC分类号： A44B19/64 ,  Y10T29/533

摘要： An apparatus for holding a pair of sliders for application to a slide fastener chain comprises, in combination with a plurality of angularly spaced slider supports intermettently movable successively through a slider receiving position and a slider applying position, an auxiliary slider support mounted on a frame of the apparatus and disposed in lateral alignment with one of the slider supports which has been brought into the slider applying position. The auxiliary slider support is reversible in position relatively to the one slider holder in such a manner that the distance between the one slider support and the auxiliary support varies upon reversal of the auxiliary slider support.

摘要翻译： 用于保持用于拉链链条的一对滑块的装置包括与多个角度间隔开的滑块支架的组合，所述多个角度间隔开的滑块支撑件可以依次通过滑块接收位置和滑块施加位置移动，辅助滑块支架安装在 该装置并且与已经进入滑块施加位置的滑块支架之一侧向对准地设置。 辅助滑动器支撑件相对于一个滑动器保持器以相对于一个滑动器保持器的位置是可逆的，使得一个滑动器支撑件和辅助支撑件之间的距离随着辅助滑动器支撑件的反转而变化。

公开(公告)号：US07417269B2

公开(公告)日：2008-08-26

申请号：US10717902

申请日：2003-11-21

申请人： Kenichi Ao ,  Yasutoshi Suzuki ,  Hideya Yamadera ,  Norikazu Ohta ,  Hirofumi Funahashi

发明人： Kenichi Ao ,  Yasutoshi Suzuki ,  Hideya Yamadera ,  Norikazu Ohta ,  Hirofumi Funahashi

IPC分类号： H01L27/148 ,  H01L29/768

CPC分类号： H01L27/22 ,  G01P3/487 ,  G01R33/02 ,  Y10T428/1193

摘要： A magnetic sensor apparatus includes a semiconductor substrate and a magnetic impedance device for detecting a magnetic field. The magnetic impedance device is disposed on the substrate. The magnetic sensor apparatus has minimum size and is made with low manufacturing cost. Here, the magnetic impedance device detects a magnetic field in such a manner that impedance of the device is changed in accordance with the magnetic filed when an alternating current is applied to the device and the impedance is measured by an external electric circuit.

摘要翻译： 磁传感器装置包括半导体衬底和用于检测磁场的磁阻抗装置。 磁阻抗装置设置在基板上。 磁传感器装置具有最小尺寸并且制造成本低。 这里，磁阻抗装置以这样的方式检测磁场，使得当将交流电流施加到装置并且通过外部电路测量阻抗时，根据磁场改变装置的阻抗。

公开(公告)号：US20070108970A1

公开(公告)日：2007-05-17

申请号：US11650929

申请日：2007-01-09

申请人： Kenichi Ao ,  Yasutoshi Suzuki ,  Hideya Yamadera ,  Norikazu Ohta ,  Hirofumi Funahashi

发明人： Kenichi Ao ,  Yasutoshi Suzuki ,  Hideya Yamadera ,  Norikazu Ohta ,  Hirofumi Funahashi

IPC分类号： G01B7/30 ,  G01R33/02

CPC分类号： H01L27/22 ,  G01P3/487 ,  G01R33/02 ,  Y10T428/1193

摘要： A magnetic sensor apparatus includes a semiconductor substrate and a magnetic impedance device for detecting a magnetic field. The magnetic impedance device is disposed on the substrate. The magnetic sensor apparatus has minimum size and is made with low manufacturing cost. Here, the magnetic impedance device detects a magnetic field in such a manner that impedance of the device is changed in accordance with the magnetic filed when an alternating current is applied to the device and the impedance is measured by an external electric circuit.

摘要翻译： 磁传感器装置包括半导体衬底和用于检测磁场的磁阻抗装置。 磁阻抗装置设置在基板上。 磁传感器装置具有最小尺寸并且制造成本低。 这里，磁阻抗装置以这样的方式检测磁场，使得当将交流电流施加到装置并且通过外部电路测量阻抗时，根据磁场改变装置的阻抗。