公开(公告)号：US07173793B2

公开(公告)日：2007-02-06

申请号：US10911578

申请日：2004-08-05

申请人： Nobuyuki Ishiwata ,  Hiroaki Honjo ,  Tamaki Toba ,  Shinsaku Saito ,  Yoshihiro Nonaka ,  Tsutomu Ishi ,  Mikiko Saito ,  Keishi Ohashi

发明人： Nobuyuki Ishiwata ,  Hiroaki Honjo ,  Tamaki Toba ,  Shinsaku Saito ,  Yoshihiro Nonaka ,  Tsutomu Ishi ,  Mikiko Saito ,  Keishi Ohashi

IPC分类号： G11B5/147

CPC分类号： G11B5/3109 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3146 ,  G11B5/3163

摘要： A recording head is a magnetic head in which ends on one side of opposed first and second magnetic cores form a recording gap, said other ends form a magnetic joint, coils insulated by an insulating material are provided between said first and second magnetic cores, magnetic fluxes of said first and second magnetic cores excited by said coils leak from said recording gap so that recording onto a recording medium is carried out. In said recording head, a distance from said end of said recording gap close to said magnetic medium to a contact point of said magnetic joint (hereinafter, yoke length) is not more than 20 μm. A magnetic recording/reproduction apparatus has this head.

摘要翻译： 记录头是磁头，其中在相对的第一和第二磁芯的一侧上的端部形成记录间隙，所述另一端形成磁性接头，在所述第一和第二磁芯之间设置由绝缘材料绝缘的线圈，磁性 由所述线圈激励的所述第一和第二磁芯的磁通从所述记录间隙泄漏，从而进行到记录介质上的记录。 在所述记录头中，从所述记录间隙的接近所述磁介质的端部到所述磁性接头的接触点（以下称为磁轭长度）的距离不大于20微米。 磁记录/再现装置具有该磁头。

公开(公告)号：US06795271B2

公开(公告)日：2004-09-21

申请号：US09748214

申请日：2000-12-27

申请人： Nobuyuki Ishiwata ,  Hiroaki Honjo ,  Tamaki Toba ,  Shinsaku Saito ,  Yoshihiro Nonaka ,  Tsutomu Ishi ,  Mikiko Saito ,  Keishi Ohashi

发明人： Nobuyuki Ishiwata ,  Hiroaki Honjo ,  Tamaki Toba ,  Shinsaku Saito ,  Yoshihiro Nonaka ,  Tsutomu Ishi ,  Mikiko Saito ,  Keishi Ohashi

IPC分类号： G11B5147

CPC分类号： G11B5/3109 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3146 ,  G11B5/3163

摘要： A recording head is a magnetic head in which ends on one side of opposed first and second magnetic cores form a recording gap, said other ends form a magnetic joint, coils insulated by an insulating material are provided between said first and second magnetic cores, magnetic fluxes of said first and second magnetic cores excited by said coils leak from said recording gap so that recording onto a recording medium is carried out. In said recording head, a distance from said end of said recording gap close to said magnetic medium to a contact point of said magnetic joint (hereinafter, yoke length) is not more than 20 &mgr;m. A magnetic recording/reproduction apparatus has this head.

摘要翻译： 记录头是磁头，其中在相对的第一和第二磁芯的一侧上的端部形成记录间隙，所述另一端形成磁性接头，在所述第一和第二磁芯之间设置由绝缘材料绝缘的线圈，磁性 由所述线圈激励的所述第一和第二磁芯的磁通从所述记录间隙泄漏，从而进行到记录介质上的记录。 在所述记录头中，从所述记录间隙的接近所述磁介质的端部到所述磁性接头的接触点（以下称为磁轭长度）的距离不大于20微米。 磁记录/再现装置具有该磁头。

公开(公告)号：US06507464B1

公开(公告)日：2003-01-14

申请号：US09566576

申请日：2000-05-08

申请人： Keishi Ohashi ,  Mikiko Saito ,  Tamaki Toba

发明人： Keishi Ohashi ,  Mikiko Saito ,  Tamaki Toba

IPC分类号： G11B5127

CPC分类号： G11B5/3967 ,  G11B5/3109 ,  G11B5/3113 ,  H01F10/16 ,  H01F41/26

摘要： A Co—Fe—Ni magnetic film has a composition represented by a chemical formula of CoxFeyNiz (50≦x≦80, 20≦y≦40, and 3≦z

摘要翻译： Co-Fe-Ni磁性膜具有化学式CoxFeyNiz（50≤x≤80，20≤y≤40，3≤z≤10（wt％））表示的组成， 平均粒径不大于40nm。 Co-Fe-Ni磁性膜通过电镀制备。 磁头包括作为磁极层的磁性膜。 一种磁存储器件包括磁头和在3500和7000Oe之间具有高矫顽力的磁记录介质的组合。

公开(公告)号：US08183656B2

公开(公告)日：2012-05-22

申请号：US12518729

申请日：2007-12-13

申请人： Daisuke Okamoto ,  Junichi Fujikata ,  Kenichi Nishi ,  Keishi Ohashi

发明人： Daisuke Okamoto ,  Junichi Fujikata ,  Kenichi Nishi ,  Keishi Ohashi

IPC分类号： H01L31/322

CPC分类号： H01L31/1085 ,  H01L31/022408 ,  H01L31/02325

摘要： A photodiode includes: an upper spacer layer including a semiconductor transparent to incident light; a metal periodic structure provided on the upper spacer layer and arranged to induce surface plasmon, the metal periodic structure including first and second electrodes including portions arranged alternately on the upper spacer layer; a light absorption layer formed under the upper spacer layer and including a semiconductor having a refractive index higher than that of the upper spacer layer; and a lower spacer layer formed under the light absorption layer and having a refractive index smaller than that of the light absorption layer. Each of the first and second electrodes forms a Schottky barrier junction with the upper spacer layer.

摘要翻译： 光电二极管包括：包括对入射光透明的半导体的上间隔层; 金属周期结构，设置在上间隔层上并且布置成诱导表面等离子体激元，金属周期结构包括第一和第二电极，包括交替设置在上间隔层上的部分; 形成在所述上间隔层下方并且具有折射率高于所述上间隔层的折射率的半导体的光吸收层; 以及形成在光吸收层下面并且具有比光吸收层的折射率小的折射率的下间隔层。 第一和第二电极中的每一个与上间隔层形成肖特基势垒结。

公开(公告)号：US07800193B2

公开(公告)日：2010-09-21

申请号：US12282959

申请日：2007-03-08

申请人： Junichi Fujikata ,  Keishi Ohashi

发明人： Junichi Fujikata ,  Keishi Ohashi

IPC分类号： H01L31/108

CPC分类号： H01L31/1085 ,  H01L31/022408

摘要： Both high light receiving sensitivity and high speed of a photodiode are achieved at the same time. The photodiode is provided with a semiconductor layer (1) and a pair of metal electrodes (2) which are arranged on the surface of the semiconductor layer (1) at an interval (d) and form an MSM junction. The interval (d) satisfies the relationship of λ>d>λ/100, where λ is the wavelength of incident light. The metal electrodes (2) can induce surface plasmon. At least one of the electrodes forms a Schottky junction with the semiconductor layer (1), and a low end portion is embedded in the semiconductor layer (1) to a position at a depth less than λ/2n, where n is the refractive index of the semiconductor layer (1).

摘要翻译： 同时实现光电二极管的高光接收灵敏度和高速度。 光电二极管设置有以间隔（d）布置在半导体层（1）的表面上并形成MSM结的半导体层（1）和一对金属电极（2）。 间隔（d）满足λ> d>λ/ 100的关系，其中λ是入射光的波长。 金属电极（2）可诱发表面等离子体。 电极中的至少一个与半导体层（1）形成肖特基结，并且将低端部分嵌入到半导体层（1）中的深度小于λ/ 2n的位置处，其中n是折射率 的半导体层（1）。

公开(公告)号：US07042319B2

公开(公告)日：2006-05-09

申请号：US10486687

申请日：2002-08-15

申请人： Nobuyuki Ishiwata ,  Hiroaki Honjo ,  Tamaki Toba ,  Shinsaku Saito ,  Keishi Ohashi

发明人： Nobuyuki Ishiwata ,  Hiroaki Honjo ,  Tamaki Toba ,  Shinsaku Saito ,  Keishi Ohashi

IPC分类号： H01H51/22

CPC分类号： H01H50/005 ,  H01F7/08 ,  H01F2007/068

摘要： The present invention provided a thin-film electromagnet including a magnetic yoke and a thin-film coil, characterized in that the magnetic yoke includes a first magnetic yoke and a second magnetic yoke making contact with the first magnetic yoke, the first magnetic yoke is located at a center of a winding of the thin-film coil, and the second magnetic yoke is arranged above or below the thin-film coil such that the second magnetic yoke faces the thin-film coil, and overlaps at least a part of the thin-film coil.

摘要翻译： 本发明提供一种包括磁轭和薄膜线圈的薄膜电磁体，其特征在于，磁轭包括与第一磁轭接触的第一磁轭和第二磁轭，第一磁轭位于 在薄膜线圈的绕组的中心处，并且第二磁轭布置在薄膜线圈的上方或下方，使得第二磁轭面对薄膜线圈，并且与薄膜线圈的至少一部分重叠 薄膜线圈。

公开(公告)号：US08467637B2

公开(公告)日：2013-06-18

申请号：US12598162

申请日：2008-04-30

申请人： Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi ,  Keishi Ohashi ,  Tai Tsuchizawa ,  Seiichi Itabashi

发明人： Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi ,  Keishi Ohashi ,  Tai Tsuchizawa ,  Seiichi Itabashi

IPC分类号： G02B6/12 ,  G02B6/26 ,  H01L29/47

CPC分类号： H01L31/022408 ,  B82Y20/00 ,  G02B6/1226 ,  G02B6/4204 ,  G02B6/4214 ,  H01L31/02325

摘要： In a waveguide path coupling-type photodiode, a semiconductor light absorbing layer and an optical waveguide path core are adjacently arranged. An electrode formed of at least one layer is installed in a boundary part of the semiconductor light absorbing layer and the optical waveguide path core. The electrodes are arranged at an interval of (1/100)λ to λ [λ: wavelength of light transmitted through optical waveguide path core]. At least a part of the electrodes is embedded in the semiconductor light absorbing layer. Embedding depth from a surface of the semiconductor light absorbing layer is a value not more than λ/(2 ns) [ns: refractive index of semiconductor light absorbing layer]. At least one layer of the electrode is constituted of a material which can surface plasmon-induced.

摘要翻译： 在波导路耦合型光电二极管中，相邻地配置有半导体光吸收层和光波导路径芯。 由至少一层形成的电极安装在半导体光吸收层和光波导路径芯的边界部分。 电极以（1/100）λ到λλ通过光波导路径芯透射的光的波长的间隔排列。 至少一部分电极嵌入在半导体光吸收层中。 从半导体光吸收层的表面嵌入深度是不大于λ/（2ns）[ns：半导体光吸收层的折射率]的值。 至少一层电极由可以表面等离子体激发的材料构成。

公开(公告)号：US08023832B2

公开(公告)日：2011-09-20

申请号：US12067625

申请日：2006-09-26

申请人： Masayuki Mizuno ,  Keishi Ohashi ,  Koichi Nose ,  Kenichi Nishi

发明人： Masayuki Mizuno ,  Keishi Ohashi ,  Koichi Nose ,  Kenichi Nishi

IPC分类号： H04B10/06

CPC分类号： H04B10/69 ,  H03K17/785

摘要： A light receiving circuit (114) includes a light inputting circuit (113) which converts one-system optical signal to be outputted from an optical transmission path (101) to an electrical signal and inverts a potential of the electrical signal each time the optical signal is detected, and a buffer circuit (110) which amplifies the electrical signal converted by the light inputting circuit and outputs the same. According to such configuration, since one-system optical signal may be inputted to the light receiving circuit, a system circuit configuration can be avoided to be complicated.

摘要翻译： 光接收电路（114）包括光输入电路（113），其将从光传输路径（101）输出的单系统光信号转换为电信号，并且每当光信号 以及缓冲电路（110），放大由光输入电路转换的电信号并输出​​。 根据这样的结构，由于可以将单一系统光信号输入到光接收电路，所以可以避免系统电路结构复杂化。

公开(公告)号：US20100200941A1

公开(公告)日：2010-08-12

申请号：US12519701

申请日：2007-11-28

申请人： Junichi Fujikata ,  Daisuke Okamoto ,  Kikuo Makita ,  Kenichi Nishi ,  Keishi Ohashi

发明人： Junichi Fujikata ,  Daisuke Okamoto ,  Kikuo Makita ,  Kenichi Nishi ,  Keishi Ohashi

IPC分类号： H01L31/0232 ,  H01L31/0264 ,  H01L31/108 ,  H01L31/105

CPC分类号： H01L31/1085 ,  B82Y20/00 ,  G02B6/1226 ,  H01L31/0224 ,  H01L31/105

摘要： Intended is to provide a device structure, which makes the light receiving sensitivity and the high speediness of a photodiode compatible. Also provided is a Schottky barrier type photodiode having a conductive layer formed on the surface of a semiconductor layer. The photodiode is so constituted that a light can be incident on the back side of the semiconductor layer, and that a periodic structure, in which a light incident from the back side of the semiconductor layer causes a surface plasmon resonance, is made around the Schottky junction of the photodiode.

摘要翻译： 旨在提供一种器件结构，这使得光接收灵敏度和光电二极管的高速度兼容。 还提供了在半导体层的表面上形成有导电层的肖特基势垒型光电二极管。 光电二极管构成为能够入射到半导体层的背侧，并且在肖特基（Schottky）周围形成从半导体层的背面入射的光引起表面等离子体共振的周期性结构 光电二极管的结。

公开(公告)号：US20100013040A1

公开(公告)日：2010-01-21

申请号：US12518729

申请日：2007-12-13

申请人： Daisuke Okamoto ,  Junichi FuJikata ,  Kenichi Nishi ,  Keishi Ohashi

发明人： Daisuke Okamoto ,  Junichi FuJikata ,  Kenichi Nishi ,  Keishi Ohashi

IPC分类号： H01L31/0232

CPC分类号： H01L31/1085 ,  H01L31/022408 ,  H01L31/02325

摘要： A photodiode includes: an upper spacer layer including a semiconductor transparent to incident light; a metal periodic structure provided on the upper spacer layer and arranged to induce surface plasmon, the metal periodic structure including first and second electrodes including portions arranged alternately on the upper spacer layer; a light absorption layer formed under the upper spacer layer and including a semiconductor having a refractive index higher than that of the upper spacer layer; and a lower spacer layer formed under the light absorption layer and having a refractive index smaller than that of the light absorption layer. Each of the first and second electrodes forms a Schottky barrier junction with the upper spacer layer.

摘要翻译： 光电二极管包括：包括对入射光透明的半导体的上间隔层; 金属周期结构，设置在上间隔层上并且布置成诱导表面等离子体激元，金属周期结构包括第一和第二电极，包括交替设置在上间隔层上的部分; 形成在所述上间隔层下方并且具有折射率高于所述上间隔层的折射率的半导体的光吸收层; 以及形成在光吸收层下面并且具有比光吸收层的折射率小的折射率的下间隔层。 第一和第二电极中的每一个与上间隔层形成肖特基势垒结。