公开(公告)号：US20100261333A1

公开(公告)日：2010-10-14

申请号：US12801680

申请日：2010-06-21

申请人： Koji Nakayama ,  Yoshitaka Sugawara ,  Katsunori Asano ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Toshiyuki Miyanagi ,  Tomonori Nakamura

发明人： Koji Nakayama ,  Yoshitaka Sugawara ,  Katsunori Asano ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Toshiyuki Miyanagi ,  Tomonori Nakamura

IPC分类号： H01L21/04 ,  H01L21/304

CPC分类号： H01L29/868 ,  H01L29/045 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/73 ,  H01L29/7397

摘要： With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle θ of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 μm/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate.

公开(公告)号：US07796203B2

公开(公告)日：2010-09-14

申请号：US12027684

申请日：2008-02-07

申请人： Kazunori Hayakawa ,  Koji Nakayama

发明人： Kazunori Hayakawa ,  Koji Nakayama

IPC分类号： G02F1/1368

CPC分类号： G02F1/136204 ,  G02F2001/136254

摘要： A liquid crystal display device including gate wiring parts for supplying a scanning signal to switching elements formed in a matrix form in a display area, and source wiring parts for supplying a video signal to the switching elements, the liquid crystal display device having a plurality of inspection switching elements arranged in an area outside the display area, and connected to the gate wiring parts or the source wiring parts and a wiring part for electrically and mutually connecting source electrodes of the inspection switching elements by high resistance elements.

摘要翻译： 一种液晶显示装置，包括用于向在显示区域中以矩阵形式形成的开关元件提供扫描信号的栅极布线部分和用于向开关元件提供视频信号的源极布线部分，所述液晶显示装置具有多个 检查开关元件布置在显示区域外的区域中，并且连接到栅极布线部分或源极布线部分，以及布线部分，用于通过高电阻元件电连接并互相连接检查开关元件的源极。

公开(公告)号：US07768017B2

公开(公告)日：2010-08-03

申请号：US10581247

申请日：2004-12-01

申请人： Koji Nakayama ,  Yoshitaka Sugawara ,  Katsunori Asano ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Toshiyuki Miyanagi ,  Tomonori Nakamura

发明人： Koji Nakayama ,  Yoshitaka Sugawara ,  Katsunori Asano ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Toshiyuki Miyanagi ,  Tomonori Nakamura

IPC分类号： H01L29/15 ,  H01L31/0312

CPC分类号： H01L29/868 ,  H01L29/045 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/73 ,  H01L29/7397

摘要： With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle θ of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 μm/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate.

摘要翻译： 为了防止由于使用碳化硅半导体的双极性半导体器件随时间的变化引起的正向电压的增加，缓冲层，漂移层和其他p型和n型半导体层形成在 生长表面，其由具有偏角角度的硅碳化物半导体的晶体的表面给出; （000-1）碳表面8度，以每小时薄膜增加率为10μm/小时的膜生长速率，比常规对应物高3倍以上。 硅烷和丙烷材料气体和掺杂气体的流速大大增加，以提高膜生长速率。

公开(公告)号：US20100032686A1

公开(公告)日：2010-02-11

申请号：US12525198

申请日：2008-01-31

申请人： Ryosuke Ishii ,  Koji Nakayama ,  Yoshitaka Sugawara ,  Hidekazu Tsuchida

发明人： Ryosuke Ishii ,  Koji Nakayama ,  Yoshitaka Sugawara ,  Hidekazu Tsuchida

IPC分类号： H01L29/866 ,  H01L21/04

CPC分类号： H01L29/866 ,  H01L29/06 ,  H01L29/0615 ,  H01L29/1608 ,  H01L29/36 ,  H01L29/66106 ,  H01L29/8613

摘要： Bipolar semiconductor devices have a Zener voltage controlled very precisely in a wide range of Zener voltages (for example, from 10 to 500 V). A bipolar semiconductor device has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, a silicon carbide conductive layer of a first conductivity type, a highly doped layer of a second conductivity type and a silicon carbide conductive layer of a second conductivity type which substrate and conductive layers are laminated in the order named.

摘要翻译： 双极半导体器件在齐纳电压的宽范围（例如10至500V）内非常精确地控制齐纳电压。 双极半导体器件具有台面结构，并且包括第一导电类型的碳化硅单晶衬底，第一导电类型的碳化硅导电层，第二导电类型的高掺杂层和碳化硅导电层 第二导电类型，其中基板和导电层按顺序层压。

公开(公告)号：US20090317983A1

公开(公告)日：2009-12-24

申请号：US12067028

申请日：2006-09-01

申请人： Toshiyuki Miyanagi ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Masahiro Nagano ,  Yoshitaka Sugawara ,  Koji Nakayama ,  Ryosuke Ishii

发明人： Toshiyuki Miyanagi ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Masahiro Nagano ,  Yoshitaka Sugawara ,  Koji Nakayama ,  Ryosuke Ishii

IPC分类号： H01L21/26

CPC分类号： H01L29/66068 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/0485 ,  H01L29/1608 ,  H01L29/861

摘要： In a bipolar silicon carbide semiconductor device in which an electron and a hole recombine with each other during current passage within a silicon carbide epitaxial film grown from a surface of a silicon carbide single crystal substrate, an object described herein is the reduction of defects which are the nuclei of a stacking fault which is expanded by current passage, thereby suppressing the increase of the forward voltage of the bipolar silicon carbide semiconductor device. In a method for producing a bipolar silicon carbide semiconductor device, the device is subjected to a thermal treatment at a temperature of 300° C. or higher in the final step of production. Preferably, the above-mentioned thermal treatment is carried out after the formation of electrodes and then the resulting bipolar silicon carbide semiconductor device is mounted in a package.

摘要翻译： 在从碳化硅单晶衬底的表面生长的碳化硅外延膜内的电流通过期间电子和空穴彼此复合的双极性碳化硅半导体器件中，本文所述的目的是减少 通过电流通过而扩展的堆垛层错的核，由此抑制双极性碳化硅半导体器件的正向电压的增加。 在制造双极性碳化硅半导体器件的方法中，在最后的制造工序中，在300℃以上的温度下进行热处理。 优选地，上述热处理在电极形成之后进行，然后将所得到的双极性碳化硅半导体器件安装在封装中。

公开(公告)号：US07478896B2

公开(公告)日：2009-01-20

申请号：US11242790

申请日：2005-10-05

申请人： Koji Ito ,  Koji Nakayama ,  Hiroshi Murashima ,  Takuji Hashiguchi

发明人： Koji Ito ,  Koji Nakayama ,  Hiroshi Murashima ,  Takuji Hashiguchi

IPC分类号： B41J2/015 ,  B41J2/045

CPC分类号： B41J2/14209 ,  B41J2002/14217 ,  B41J2002/14225 ,  B41J2002/14306 ,  B41J2002/14459 ,  B41J2002/14491 ,  B41J2202/08 ,  B41J2202/18 ,  B41J2202/20

摘要： An ink jet head is presented that decreases the density in wiring patterns to be connected to a large number of actuator terminals formed on a main body of the ink jet head while ensuring large spacing between the wirings. The ink jet head comprises a main body, a driver IC, and a sheet. The main body comprises a plurality of nozzles, a plurality of pressure chambers, a plurality of actuators, and a plurality of actuator terminals distributed on a surface of the main body. The driver IC can select any actuator terminal among the plurality of actuator terminals and transmit a driving voltage to the selected actuator terminal. The sheet mounts the driver IC at a first surface of the sheet and is fixed to the main body at a second surface. The sheet comprises a plurality of input terminals, a plurality of output terminals distributed on the second surface, a plurality of first wirings connecting the input terminals and the driver IC, and a plurality of second wirings connecting the driver IC and the output terminals. Output terminals of the sheet are connected to the actuator terminals of the main body. The second wiring penetrates the sheet.

摘要翻译： 提出了一种喷墨头，其降低了连接到形成在喷墨头主体上的大量致动器端子的布线图案中的密度，同时确保了布线之间的大间距。 喷墨头包括主体，驱动器IC和片材。 主体包括多个喷嘴，多个压力室，多个致动器和分布在主体的表面上的多个致动器端子。 驱动器IC可以选择多个致动器端子中的任何致动器端子，并将驱动电压传送到所选择的致动器端子。 片材将驱动器IC安装在片材的第一表面上并且在第二表面处固定到主体。 片材包括多个输入端子，分布在第二表面上的多个输出端子，连接输入端子和驱动器IC的多个第一布线以及连接驱动器IC和输出端子的多个第二布线。 纸张的输出端子连接到主体的致动器端子。 第二布线穿透片材。

公开(公告)号：US07374277B2

公开(公告)日：2008-05-20

申请号：US11226230

申请日：2005-09-15

申请人： Koji Nakayama

发明人： Koji Nakayama

IPC分类号： B41J2/045 ,  B41J2/14

CPC分类号： B41J2/14209 ,  B41J2002/14217 ,  B41J2002/14225 ,  B41J2002/14459 ,  B41J2002/14491 ,  B41J2202/11 ,  B41J2202/20

摘要： An ink-jet head includes a passage unit, an actuator unit, a flexible cable, conductors, and spacers. The actuator unit has individual electrodes corresponding to respective pressure chambers of the passage unit. The flexible cable has wirings corresponding to the respective individual electrodes and is spaced apart from the actuator unit. The conductors are disposed between the actuator unit and the flexible cable so as to electrically connect the individual electrodes to the wirings, respectively. The spacers, which are not electrically connected to the individual electrodes and the wirings, are disposed between the actuator unit and the flexible cable so that each of the spacers is positioned in a region surrounded by three or more of the conductors.

摘要翻译： 喷墨头包括通道单元，致动器单元，柔性电缆，导体和间隔件。 致动器单元具有对应于通道单元的相应压力室的单独电极。 柔性电缆具有对应于各个单独电极的布线并且与致动器单元间隔开。 导体设置在致动器单元和柔性电缆之间，以便将各个电极分别电连接到布线。 没有电连接到各个电极和布线的间隔件设置在致动器单元和柔性电缆之间，使得每个间隔件定位在由三个或更多个导体包围的区域中。

公开(公告)号：US20080024581A1

公开(公告)日：2008-01-31

申请号：US11782725

申请日：2007-07-25

申请人： Koji Nakayama

发明人： Koji Nakayama

IPC分类号： B41J2/01

CPC分类号： B41J29/17 ,  B41J11/0015 ,  B41J11/007

摘要： There is disclosed an inkjet recording apparatus including a feeding device, a remover, and an inkjet head. The feeding device feeds a recording medium along a feed path passing through a removing area. A part of an opposingly-feeding surface extends opposed to the ink jet head and along the feed path, and the removing area is located under the opposingly-feeding surface and within the opposingly-feeding surface as seen in a vertical direction. The remover removes foreign matter from a surface of the recording medium during the recording medium is fed through the removing area by the feeding device. The inkjet head is disposed downstream of the remover with respect to a feeding direction in which the recording medium is fed. The inkjet head has an ink ejection surface in which a nozzle is open, and an ink droplet is ejected from the nozzle toward a recording surface of the recording medium while the recording medium is fed along at least a part of the opposingly-feeding surface.

摘要翻译： 公开了一种喷墨记录装置，其包括进料装置，去除剂和喷墨头。 馈送装置沿着通过去除区域的馈送路径馈送记录介质。 反向进给表面的一部分与喷墨头相对并且沿着进给路径延伸，并且在垂直方向上看去除区域位于相对输送表面下方和相对进给表面内。 在记录介质通过进给装置通过去除区域供给时，去除器从记录介质的表面去除异物。 喷墨头相对于记录介质被供给的进给方向设置在去除器的下游。 喷墨头具有其中喷嘴打开的喷墨表面，并且当记录介质沿着相对输送表面的至少一部分进给时，墨滴从喷嘴朝向记录介质的记录表面喷射。

公开(公告)号：US20070290211A1

公开(公告)日：2007-12-20

申请号：US10594045

申请日：2005-03-25

申请人： Koji Nakayama ,  Yoshitaka Sugawara ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Toshiyuki Miyanagi ,  Tomonori Nakamura

发明人： Koji Nakayama ,  Yoshitaka Sugawara ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Toshiyuki Miyanagi ,  Tomonori Nakamura

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L21/302 ,  H01L21/331 ,  H01L21/336 ,  H01L29/73 ,  H01L29/78 ,  H01L29/861

CPC分类号： H01L29/8613 ,  H01L21/02019 ,  H01L21/02024 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/02661

摘要： A process for manufacturing a bipolar type semiconductor device in which at least a part of a region where an electron and a hole are recombined during current flowing is formed with a silicon carbide epitaxial layer that has been grown from the surface of a silicon carbide substrate, is characterized by that the surface of the silicon carbide substrate is treated by hydrogen etching and the epitaxial layer is then formed by the epitaxial growth of silicon carbide from the treated surface. A propagation of a basal plane dislocation to the epitaxial layer can be further reduced by treating the surface of the silicon carbide substrate by using chemical mechanical polishing and hydrogen etching in this order.

摘要翻译： 一种用于制造双极型半导体器件的方法，其中在电流流动期间电子和空穴复合的区域的至少一部分由从碳化硅衬底的表面生长的碳化硅外延层形成， 其特征在于，通过氢蚀刻处理碳化硅衬底的表面，然后通过从处理过的表面外延生长碳化硅形成外延层。 通过使用化学机械抛光和氢蚀刻依次处理碳化硅衬底的表面，可以进一步减少基面平面位错到外延层的传播。

公开(公告)号：US20070090370A1

公开(公告)日：2007-04-26

申请号：US10581247

申请日：2004-12-01

申请人： Koji Nakayama ,  Yoshitaka Sugawara ,  Katsunori Asano ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Toshiyuki Miyanagi ,  Tomonori Nakamura

发明人： Koji Nakayama ,  Yoshitaka Sugawara ,  Katsunori Asano ,  Hidekazu Tsuchida ,  Isaho Kamata ,  Toshiyuki Miyanagi ,  Tomonori Nakamura

IPC分类号： H01L31/0312

CPC分类号： H01L29/868 ,  H01L29/045 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/73 ,  H01L29/7397

摘要： With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle θ of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 μm/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate.

摘要翻译： 为了防止由于使用碳化硅半导体的双极性半导体器件随时间的变化引起的正向电压的增加，缓冲层，漂移层和其他p型和n型半导体层形成在 生长表面，其具有距离晶体的（000-1）碳表面具有8度偏离角度的碳化硅半导体的晶体表面，膜厚度为膜厚度 每小时h的增加速率为10mum / h，是传统方式的三倍或更高。 硅烷和丙烷材料气体和掺杂气体的流速大大增加，以提高膜生长速率。