摘要:
A synchronous semiconductor memory device can achieve either of a pipelined mode and a prefetch mode with one chip. In accordance with CAS (column address strobe) latency 4 instructing signal MCL4 stored in a mode register, a sequence of generation of control signals from a control signal generating circuit is set to either the pipelined mode or the prefetch mode. A mode switching circuit merely switches reset timings of a write buffer in accordance with a CAS latency. Therefore, the internal data write mode can be easily switched in accordance with an operation environment, and the synchronous semiconductor memory device can implement multiple data write modes with one chip.
摘要:
The present invention relates to an impact resistant polystyrene composition which comprises 5 to 97% by weight of an (a) styrenic polymer having syndiotactic configuration, 2 to 95% by weight of a (b) rubbery elastomer having an olefinic component or a polyolefin, and 0.5 to 10% by weight of a (c) styrene/olefin block or graft copolymer having a micro-phase separation temperature of 180.degree. C. at the highest when diluted with dioctyl phthalate to a solution with a concentration of 60% by weight; according to the present invention, an impact resistant polystyrene composition can be provided which is greatly enhanced in impact resistance and extensibility without impairing heat resistance and modulus of elasticity.
摘要:
The present invention relates to an impact resistant polystyrene composition which comprises an (A) styrenic polymer having syndiotactic configuration and a (B) rubbery elastomer modified by a modifier having a polar group, or to an impact resistant polystyrene composition which comprises the aforesaid composition and a (C) rubbery elastomer and/or a (D) poly(phenylene ether).The polystyrene compositions according to the present invention are excellent in heat resistance, modulus of elasticity, impact resistance and extensibility and thus are expected to find effective use for molding electric and electronic materials, industrial construction materials, automobile part, domestic electrical appliances, industrial materials such as various machine parts, etc.
摘要:
The present invention provides cell lines capable of indefinite growth which are produced by transforming leukocytes isolated from peripheral blood of fish with a oncogene, a method of establishing the cell line, a method of recovering immunologically active substances from the culture of the cell lines. It has been difficult to maintain continuous cultures of fish leukocytes. The present invention provides cell lines capable of indefinite growth and a method of producing immunologically active substances, e.g., immunologically acitive substances, using these cell lines.
摘要:
A slit exposure type illuminating device mainly applicable to a color electrophotographic copier and using a plurality of lamps includes a single reflector which is provided with a plurality of openings for inserting the lamps. The lamps are arranged in an array along the length of the reflector. One of the lamps is positioned on an optical axis which extends through the center of the reflector with respect to the lengthwise direction of the reflector. The lamps are divided into a first and a second lamp groups in each of which they are arranged symmetrically with respect to the optical axis and individually spaced by predetermined distances from the optical axis. Current is fed either independently or simultaneously to the two different lamp groups. The openings of the reflector are each so adjustable in position and dimension as to prevent the bulb of each lamp from intercepting light.
摘要:
According to one embodiment, a semiconductor device includes a semiconductor layer; a plurality of semiconductor regions; second semiconductor region; a first electrode being positioned between the plurality of first semiconductor regions, the first electrode contacting with the semiconductor layer, each of the plurality of first semiconductor regions, and the second semiconductor region via a first insulating film; a second electrode provided below the first electrode, and contacting with the semiconductor layer via a second insulating film; an insulating layer interposed between the first electrode and the second electrode; a third electrode electrically connected to the semiconductor layer; and a fourth electrode connected to the second semiconductor region. The first electrode has a first portion and a pair of second portions. And each of the pair of second portions is provided along the first insulating film.
摘要:
Process for the production of valve metal powders, in particular niobium and tantalum powder, by reduction of corresponding valve metal oxide powders by means of vaporous reducing metals and/or hydrides thereof, preferably in the presence of an inert carrier gas, wherein the reduction is performed at a vapor partial pressure of the reducing metal/metal hydride of 5 to 110 hPa and an overall pressure of less than 1000 hPa, and tantalum powder obtainable in this way having a high stability of the powder agglomerate particles.
摘要:
An annealing and manufacturing method of hot-dip galvanized steel strips includes suppression of oxide formation of elements in the steel strips. An annealing furnace includes a heating zone, a soaking zone, and a cooling zone in which a portion of gas is introduced to decrease the gas dew point. A gas suction rate Qo1 in a portion of the cooling zone, a gas suction rate Qo2 in an upper portion and a gas feed rate Qi2 in a lower portion of the soaking zone, a gas feed rate Qi1 in a connection part between the soaking and cooling zones, an atmosphere gas supply rate Qf1 into the cooling zone and its subsequent zone, an atmosphere gas supply rate Qf2 into the soaking zone, an internal volume Vs of the soaking zone, and an average furnace temperature Ts of the soaking zone satisfy relationships including 0.3×Qf1
摘要:
A semiconductor device includes: a semiconductor substrate of a first conductivity type; a semiconductor region provided in the semiconductor substrate; a first trench formed in the semiconductor region; a second trench formed in the semiconductor substrate; a trench gate electrode provided in the first trench; and a trench source electrode provided in the second trench. The trench source electrode is shaped like a stripe and connected to the source electrode through its longitudinal portion.
摘要:
An imaging apparatus capturing and recording a moving image and a static image at the same time includes a converter converting an optical image of a subject into a pixel signal, performing decimation on the pixel signal and outputting the pixel signal that has been subjected to decimation when recording of the moving image is performed but recording of the static image is not performed, and outputting the pixel signal that has not been subjected to decimation when recording of the moving image and the static image is performed; an eliminating section performing decimation on the pixel signal output from the converter only when recording of the moving image and the static image is performed; a moving image data generator generating moving image data; a static image data generator generating static image data; and a recorder recording the moving image data and the static image data.