Synchronous semiconductor memory device operable in a plurality of data
write operation modes
    41.
    发明授权
    Synchronous semiconductor memory device operable in a plurality of data write operation modes 失效
    在多个数据写入操作模式下可操作的同步半导体存储器件

    公开(公告)号:US5892730A

    公开(公告)日:1999-04-06

    申请号:US980963

    申请日:1997-12-01

    CPC分类号: G11C7/1039 G11C7/1072

    摘要: A synchronous semiconductor memory device can achieve either of a pipelined mode and a prefetch mode with one chip. In accordance with CAS (column address strobe) latency 4 instructing signal MCL4 stored in a mode register, a sequence of generation of control signals from a control signal generating circuit is set to either the pipelined mode or the prefetch mode. A mode switching circuit merely switches reset timings of a write buffer in accordance with a CAS latency. Therefore, the internal data write mode can be easily switched in accordance with an operation environment, and the synchronous semiconductor memory device can implement multiple data write modes with one chip.

    摘要翻译: 同步半导体存储器件可以使用一个芯片实现流水线模式和预取模式中的任一种。 根据存储在模式寄存器中的CAS(列地址选通)等待时间4指令信号MCL4,将来自控制信号发生电路的控制信号的生成序列设置为流水线模式或预取模式。 模式切换电路仅根据CAS延迟来切换写缓冲器的复位定时。 因此,可以根据操作环境容易地切换内部数据写入模式,并且同步半导体存储器件可以利用一个芯片实现多个数据写入模式。

    Impact modified syndiotactic polystyrene blend
    42.
    发明授权
    Impact modified syndiotactic polystyrene blend 失效
    抗冲改性间同立构聚苯乙烯共混物

    公开(公告)号:US5777028A

    公开(公告)日:1998-07-07

    申请号:US648017

    申请日:1996-05-31

    摘要: The present invention relates to an impact resistant polystyrene composition which comprises 5 to 97% by weight of an (a) styrenic polymer having syndiotactic configuration, 2 to 95% by weight of a (b) rubbery elastomer having an olefinic component or a polyolefin, and 0.5 to 10% by weight of a (c) styrene/olefin block or graft copolymer having a micro-phase separation temperature of 180.degree. C. at the highest when diluted with dioctyl phthalate to a solution with a concentration of 60% by weight; according to the present invention, an impact resistant polystyrene composition can be provided which is greatly enhanced in impact resistance and extensibility without impairing heat resistance and modulus of elasticity.

    摘要翻译: PCT No.PCT / JP95 / 02029 Sec。 371日期:1996年5月31日 102(e)日期1996年5月31日PCT提交1995年10月4日PCT公布。 公开号WO96 / 11233 日期:1996年04月18日本发明涉及耐冲击聚苯乙烯组合物,其包含5至97重量%的具有间同立构构型的(a)苯乙烯聚合物,2至95重量%的(b)具有烯属 组分或聚烯烃,和0.5〜10重量%的(c)苯乙烯/烯烃嵌段或接枝共聚物,当用邻苯二甲酸二辛酯稀释成浓度为的溶液时,其最高的微相分离温度为180℃ 为60%(重量); 根据本发明,可以提供耐冲击性和延展性大大提高而不损害耐热性和弹性模量的耐冲击聚苯乙烯组合物。

    Impact resistant polystyrene composition
    43.
    发明授权
    Impact resistant polystyrene composition 失效
    耐冲击聚苯乙烯组合物

    公开(公告)号:US5543462A

    公开(公告)日:1996-08-06

    申请号:US325345

    申请日:1994-11-02

    摘要: The present invention relates to an impact resistant polystyrene composition which comprises an (A) styrenic polymer having syndiotactic configuration and a (B) rubbery elastomer modified by a modifier having a polar group, or to an impact resistant polystyrene composition which comprises the aforesaid composition and a (C) rubbery elastomer and/or a (D) poly(phenylene ether).The polystyrene compositions according to the present invention are excellent in heat resistance, modulus of elasticity, impact resistance and extensibility and thus are expected to find effective use for molding electric and electronic materials, industrial construction materials, automobile part, domestic electrical appliances, industrial materials such as various machine parts, etc.

    摘要翻译: PCT No.PCT / JP94 / 00332 Sec。 371日期:1994年11月2日 102(e)日期1994年11月2日PCT 1994年3月2日PCT公布。 公开号WO94 / 20571 1994年9月15日本发明涉及耐冲击聚苯乙烯组合物,其包含具有间同立构构型的(A)苯乙烯类聚合物和通过具有极性基团的改性剂改性的(B)橡胶状弹性体或耐冲击聚苯乙烯组合物, 包括上述组合物和(C)橡胶状弹性体和/或(D)聚(苯醚)。 根据本发明的聚苯乙烯组合物的耐热性,弹性模量,耐冲击性和延展性优异,因此有望用于模制电气和电子材料,工业建筑材料,汽车部件,家用电器,工业材料 如各种机器零件等

    Illuminating device for a color copier
    45.
    发明授权
    Illuminating device for a color copier 失效
    彩色复印机照明装置

    公开(公告)号:US4866478A

    公开(公告)日:1989-09-12

    申请号:US162128

    申请日:1988-02-29

    IPC分类号: G03B27/54 G03G15/04

    CPC分类号: G03G15/04036 G03B27/542

    摘要: A slit exposure type illuminating device mainly applicable to a color electrophotographic copier and using a plurality of lamps includes a single reflector which is provided with a plurality of openings for inserting the lamps. The lamps are arranged in an array along the length of the reflector. One of the lamps is positioned on an optical axis which extends through the center of the reflector with respect to the lengthwise direction of the reflector. The lamps are divided into a first and a second lamp groups in each of which they are arranged symmetrically with respect to the optical axis and individually spaced by predetermined distances from the optical axis. Current is fed either independently or simultaneously to the two different lamp groups. The openings of the reflector are each so adjustable in position and dimension as to prevent the bulb of each lamp from intercepting light.

    Semiconductor device and manufacturing method of the same
    46.
    发明授权
    Semiconductor device and manufacturing method of the same 有权
    半导体器件及其制造方法相同

    公开(公告)号:US08884362B2

    公开(公告)日:2014-11-11

    申请号:US13614791

    申请日:2012-09-13

    摘要: According to one embodiment, a semiconductor device includes a semiconductor layer; a plurality of semiconductor regions; second semiconductor region; a first electrode being positioned between the plurality of first semiconductor regions, the first electrode contacting with the semiconductor layer, each of the plurality of first semiconductor regions, and the second semiconductor region via a first insulating film; a second electrode provided below the first electrode, and contacting with the semiconductor layer via a second insulating film; an insulating layer interposed between the first electrode and the second electrode; a third electrode electrically connected to the semiconductor layer; and a fourth electrode connected to the second semiconductor region. The first electrode has a first portion and a pair of second portions. And each of the pair of second portions is provided along the first insulating film.

    摘要翻译: 根据一个实施例,半导体器件包括半导体层; 多个半导体区域; 第二半导体区域; 第一电极位于多个第一半导体区域之间,第一电极经由第一绝缘膜与半导体层,多个第一半导体区域和第二半导体区域中的每一个接触; 第二电极,设置在第一电极下方,并经由第二绝缘膜与半导体层接触; 介于所述第一电极和所述第二电极之间的绝缘层; 电连接到所述半导体层的第三电极; 以及连接到第二半导体区域的第四电极。 第一电极具有第一部分和一对第二部分。 并且一对第二部分中的每一个沿着第一绝缘膜设置。

    Method for production of niobium and tantalum powder
    47.
    发明授权
    Method for production of niobium and tantalum powder 有权
    生产铌和钽粉的方法

    公开(公告)号:US08801829B2

    公开(公告)日:2014-08-12

    申请号:US12910220

    申请日:2010-10-22

    IPC分类号: B22F9/22

    摘要: Process for the production of valve metal powders, in particular niobium and tantalum powder, by reduction of corresponding valve metal oxide powders by means of vaporous reducing metals and/or hydrides thereof, preferably in the presence of an inert carrier gas, wherein the reduction is performed at a vapor partial pressure of the reducing metal/metal hydride of 5 to 110 hPa and an overall pressure of less than 1000 hPa, and tantalum powder obtainable in this way having a high stability of the powder agglomerate particles.

    摘要翻译: 通过优选在惰性载体气体存在下,通过还原金属和/或氢化物,通过还原相应的阀金属氧化物粉末来生产阀金属粉末,特别是铌和钽粉末的方法,其中还原为 在还原性金属/金属氢化物的蒸汽分压为5〜110hPa,总压力小于1000hPa的钽粉末中,以粉末附聚粒子的稳定性高的方式进行。

    CONTINUOUS ANNEALING METHOD AND A MANUFACTURING METHOD OF HOT-DIP GALVANIZED STEEL STRIPS
    48.
    发明申请
    CONTINUOUS ANNEALING METHOD AND A MANUFACTURING METHOD OF HOT-DIP GALVANIZED STEEL STRIPS 有权
    连续退火方法和热镀锌钢筋的制造方法

    公开(公告)号:US20130273251A1

    公开(公告)日:2013-10-17

    申请号:US13994366

    申请日:2011-12-13

    IPC分类号: C23C2/02

    摘要: An annealing and manufacturing method of hot-dip galvanized steel strips includes suppression of oxide formation of elements in the steel strips. An annealing furnace includes a heating zone, a soaking zone, and a cooling zone in which a portion of gas is introduced to decrease the gas dew point. A gas suction rate Qo1 in a portion of the cooling zone, a gas suction rate Qo2 in an upper portion and a gas feed rate Qi2 in a lower portion of the soaking zone, a gas feed rate Qi1 in a connection part between the soaking and cooling zones, an atmosphere gas supply rate Qf1 into the cooling zone and its subsequent zone, an atmosphere gas supply rate Qf2 into the soaking zone, an internal volume Vs of the soaking zone, and an average furnace temperature Ts of the soaking zone satisfy relationships including 0.3×Qf1

    摘要翻译: 热镀锌钢带的退火和制造方法包括抑制钢带中元素的氧化物形成。 退火炉包括加热区,均热区和冷却区,其中引入一部分气体以降低气体露点。 在冷却区域的一部分中的吸气率Qo1,上部的吸气率Qo2和均热区的下部的气体供给速度Qi2,浸渍和 冷却区,向冷却区及其后续区域的气氛气体供给量Qf1,进入均热区域的气氛气体供给量Qf2,均热区域的内部体积Vs,均热区域的平均炉温Ts满足关系 包括0.3×Qf1

    Imaging apparatus, imaging method, and program
    50.
    发明授权
    Imaging apparatus, imaging method, and program 有权
    成像设备,成像方法和程序

    公开(公告)号:US08102434B2

    公开(公告)日:2012-01-24

    申请号:US11556304

    申请日:2006-11-03

    IPC分类号: H04N5/225 H04N5/00

    摘要: An imaging apparatus capturing and recording a moving image and a static image at the same time includes a converter converting an optical image of a subject into a pixel signal, performing decimation on the pixel signal and outputting the pixel signal that has been subjected to decimation when recording of the moving image is performed but recording of the static image is not performed, and outputting the pixel signal that has not been subjected to decimation when recording of the moving image and the static image is performed; an eliminating section performing decimation on the pixel signal output from the converter only when recording of the moving image and the static image is performed; a moving image data generator generating moving image data; a static image data generator generating static image data; and a recorder recording the moving image data and the static image data.

    摘要翻译: 同时拍摄和记录运动图像和静态图像的成像装置包括将被摄体的光学图像转换为像素信号的转换器,对像素信号执行抽取并输出已经进行抽取的像素信号,当 执行运动图像的记录,而不执行静态图像的记录,并且当执行运动图像和静态图像的记录时,输出未进行抽取的像素信号; 消除部,仅在进行运动图像和静态图像的记录时,对从转换器输出的像素信号进行抽取; 生成运动图像数据的运动图像数据生成器; 产生静态图像数据的静态图像数据发生器; 以及记录运动图像数据和静态图像数据的记录器。