公开(公告)号：US10411063B2

公开(公告)日：2019-09-10

申请号：US15628304

申请日：2017-06-20

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Oray Orkun Cellek ,  Duli Mao ,  Xianfu Cheng ,  Xin Wang ,  Bill Phan ,  Dyson Tai

IPC: H01L27/00 ,  H01L27/148 ,  H01L27/146 ,  H04N5/378 ,  H04N5/355 ,  H04N5/3745

Abstract: A single-exposure high dynamic range (HDR) image sensor includes a first photodiode and a second photodiode, with a smaller full-well capacity than the first photodiode, disposed in a semiconductor material. The image sensor also includes a first floating diffusion disposed in the semiconductor material and a first transfer gate coupled to the first photodiode to transfer first image charge accumulated in the first photodiode into the first floating diffusion. A second floating diffusion is disposed in the semiconductor material and a second transfer gate is coupled to the second photodiode to transfer second image charge accumulated in the second photodiode into the second floating diffusion. An attenuation layer is disposed between the second photodiode and image light directed towards the single-exposure HDR image sensor to block a portion of the image light from reaching the second photodiode.

公开(公告)号：US10269846B2

公开(公告)日：2019-04-23

申请号：US15799198

申请日：2017-10-31

Applicant: OmniVision Technologies, Inc.

Inventor： Sohei Manabe ,  Keiji Mabuchi ,  Takayuki Goto ,  Dajiang Yang

IPC: H01L27/146 ,  H01L31/0232

Abstract: A method of backside illuminated image sensor fabrication includes forming a plurality of photodiodes in a semiconductor material, where the plurality of photodiodes are disposed to receive image light through a backside of the backside illuminated image sensor. The method further includes forming a transfer gate coupled to extract image charge from a photodiode in the plurality of photodiodes, and forming a storage gate coupled to the transfer gate to receive the image charge. Forming the storage gate includes forming an optical shield in the semiconductor material; depositing a gate electrode proximate to a frontside of the semiconductor material; and implanting a storage node in the semiconductor material, where the storage node is disposed in the semiconductor material between the optical shield and the gate electrode.

公开(公告)号：US20190109169A1

公开(公告)日：2019-04-11

申请号：US16150135

申请日：2018-10-02

Applicant: OmniVision Technologies, Inc.

Inventor： Xin Wang ,  Dajiang Yang ,  Siguang Ma ,  Keiji Mabuchi ,  Bill Phan ,  Duli Mao ,  Dyson Tai

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/374

Abstract: An image sensor includes a photodiode disposed in a first semiconductor material to absorb photons incident on the image sensor and generate image charge. A floating diffusion is disposed in the first semiconductor material and positioned to receive the image charge from the photodiode, and a transfer transistor is coupled between the photodiode and the floating diffusion to transfer the image charge out of the photodiode into floating diffusion in response to a transfer signal. A source follower transistor with a gate terminal is coupled to the floating diffusion to output an amplified signal of the image charge in the floating diffusion. The gate terminal includes a second semiconductor material in contact with the floating diffusion, and a gate oxide is partially disposed between the second semiconductor material and the first semiconductor material. The second semiconductor material extends beyond the lateral bounds of the floating diffusion.

公开(公告)号：US10243015B1

公开(公告)日：2019-03-26

申请号：US15872887

申请日：2018-01-16

Applicant: OmniVision Technologies, Inc.

Inventor： Xin Wang ,  Dajiang Yang ,  Siguang Ma ,  Duli Mao ,  Dyson H. Tai

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/374

Abstract: A method for fabricating a photosensor array integrated circuit includes forming an isolation trench by a method comprising depositing a hard mask layer on a [110]-oriented single-crystal silicon substrate wafer, depositing, exposing, and developing a photoresist on the hard mask layer to define photoresist openings of locations for the trenches, dry plasma etching through the photoresist openings to form openings in the hard mask layer of locations for the trenches, and performing an anisotropic wet etch through the openings in the hard mask layer. In particular embodiments, the trenches are lined with P-type silicon, a silicon dioxide dielectric, and an additional oxide layer before being filled with tungsten.

公开(公告)号：US10128299B1

公开(公告)日：2018-11-13

申请号：US15728893

申请日：2017-10-10

Applicant: OmniVision Technologies, Inc.

Inventor： Xin Wang ,  Dajiang Yang ,  Siguang Ma ,  Keiji Mabuchi ,  Bill Phan ,  Duli Mao ,  Dyson Tai

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/374

Abstract: An image sensor includes a photodiode disposed in a first semiconductor material to absorb photons incident on the image sensor and generate image charge. A floating diffusion is disposed in the first semiconductor material and positioned to receive the image charge from the photodiode, and a transfer transistor is coupled between the photodiode and the floating diffusion to transfer the image charge out of the photodiode into floating diffusion in response to a transfer signal. A source follower transistor with a gate terminal is coupled to the floating diffusion to output an amplified signal of the image charge in the floating diffusion. The gate terminal includes a second semiconductor material in contact with the floating diffusion, and a gate oxide is partially disposed between the second semiconductor material and the first semiconductor material. The second semiconductor material extends beyond the lateral bounds of the floating diffusion.

公开(公告)号：US10104285B2

公开(公告)日：2018-10-16

申请号：US15249787

申请日：2016-08-29

Applicant: OmniVision Technologies, Inc.

Inventor： Qin Wang ,  Gang Chen ,  Dajiang Yang

IPC: H04N5/232 ,  H04N5/225 ,  H04N5/374 ,  H04N9/04

Abstract: A camera system has a lens focusing incoming light through a deflector system having at least one deflector plate onto a photosensor array. An image processor captures at least a first image with the deflector system in a first position and a second image with the deflector system in a second position to provide a focal point offset in a first axis on the photosensor array, and the firmware is configured to prepare an enhanced image from at least the first and second images. A method of imaging includes focusing incoming light through a deflector system having at least one deflector plate onto a photosensor array; receiving at least a first image with the deflector system in a first position; receiving a second image with the deflector system configured providing a focal point offset on the photosensor array; and preparing an enhanced image from the first and second images.

公开(公告)号：US10103194B2

公开(公告)日：2018-10-16

申请号：US15276000

申请日：2016-09-26

Applicant: OmniVision Technologies, Inc.

Inventor： Xin Wang ,  Dajiang Yang ,  Qin Wang ,  Duli Mao ,  Dyson Hsin-Chih Tai

IPC: H01L27/146

Abstract: An image sensor includes a substrate, a plurality of light sensitive pixels, a first plurality of color filters, a plurality of reflective sidewalls, and a second plurality of color filters. The light sensitive pixels are formed on said substrate. The first plurality of color filters is disposed over a first group of the light sensitive pixels. The reflective sidewalls are formed on each side of each of the first plurality of color filters. The second plurality of color filters are disposed over a second group of light sensitive pixels and each color filter of the second plurality of color filters is separated from each adjacent filter of said first plurality of color filters by one of the reflective sidewalls. In a particular embodiment an etch-resistant layer is disposed over the first plurality of color filters and the second group of light sensitive pixels.

公开(公告)号：US10103185B2

公开(公告)日：2018-10-16

申请号：US15874648

申请日：2018-01-18

Applicant: OmniVision Technologies, Inc.

Inventor： Dajiang Yang ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai

IPC: H04N5/347 ,  H01L27/146 ,  H01L31/0392 ,  H01L31/18

Abstract: A method of image sensor fabrication includes growing a semiconductor material having an illuminated surface and a non-illuminated surface, where the semiconductor material includes silicon and germanium and a germanium concentration increases in a direction of the non-illuminated surface. The method further includes forming a plurality of photodiodes, including a doped region and a heavily doped region, in the semiconductor material, where the doped region is of an opposite majority charge carrier type as the heavily doped region. A plurality of isolation regions are formed and disposed between individual photodiodes in the plurality of photodiodes, where the plurality of isolation regions surround, at least in part, the individual photodiodes and electrically isolate the individual photodiodes.

公开(公告)号：US20180151610A1

公开(公告)日：2018-05-31

申请号：US15799198

申请日：2017-10-31

Applicant: OmniVision Technologies, Inc.

Inventor： Sohei Manabe ,  Keiji Mabuchi ,  Takayuki Goto ,  Dajiang Yang

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689 ,  H01L31/02327

Abstract: A method of backside illuminated image sensor fabrication includes forming a plurality of photodiodes in a semiconductor material, where the plurality of photodiodes are disposed to receive image light through a backside of the backside illuminated image sensor. The method further includes forming a transfer gate coupled to extract image charge from a photodiode in the plurality of photodiodes, and forming a storage gate coupled to the transfer gate to receive the image charge. Forming the storage gate includes forming an optical shield in the semiconductor material; depositing a gate electrode proximate to a frontside of the semiconductor material; and implanting a storage node in the semiconductor material, where the storage node is disposed in the semiconductor material between the optical shield and the gate electrode.

公开(公告)号：US09954020B1

公开(公告)日：2018-04-24

申请号：US15395963

申请日：2016-12-30

Applicant: OmniVision Technologies, Inc.

Inventor： Chen-Wei Lu ,  Dajiang Yang ,  Oray Orkun Cellek ,  Duli Mao

IPC: H01L27/146 ,  H04N9/04 ,  H04N5/355 ,  H04N5/369 ,  G02B5/20

CPC classification number: H01L27/14621 ,  G02B5/201 ,  G02B5/205 ,  H01L27/14607 ,  H01L27/14685 ,  H04N5/355 ,  H04N5/3696 ,  H04N9/045

Abstract: A high-dynamic-range color image sensor includes (a) a silicon substrate having a photosensitive pixel array with a plurality of first pixels and a plurality of second pixels, (b) a color filter layer disposed on the silicon substrate and including at least (i) a plurality of first color filters positioned above a first subset of each of the plurality of first pixels and the plurality of second pixels and configured to selectively transmit light of a first color and (ii) a plurality of second color filters positioned above a second subset of each of the plurality of first pixels and the plurality of second pixels and configured to selectively transmit light of a second color, and (c) a dynamic-range extending layer disposed on the color filter layer and including grey filters disposed above the second plurality of pixels to attenuate light propagating toward the second plurality of pixels.