Method of producing an optoelectronic component, and optoelectronic component

    公开(公告)号:US10991683B2

    公开(公告)日:2021-04-27

    申请号:US16486559

    申请日:2018-03-06

    Abstract: A method of manufacturing an optoelectronic component includes: A) providing a substrate, B) providing a metallic liquid arranged in a structured manner and in direct mechanical contact on the substrate and including at least one first metal, C) providing semiconductor chips each having a metallic termination layer on their rear side, the metallic termination layer including at least one second metal different from the first metal, and D) self-organized arranging the semiconductor chips on the metallic liquid so that the first metal and the second metal form at least one intermetallic compound having a higher re-melting temperature than the melting temperature of the metallic liquid, wherein the intermetallic compound is a connecting layer between the substrate and the semiconductor chips.

    RADIATION-EMITTING DEVICE
    43.
    发明申请

    公开(公告)号:US20190386182A1

    公开(公告)日:2019-12-19

    申请号:US16480732

    申请日:2018-01-25

    Abstract: A radiation-emitting device includes a semiconductor layer sequence having an active layer that emits a primary radiation during operation, a decoupling surface on a surface of the semiconductor layer sequence, a wavelength conversion layer on a side of the semiconductor layer sequence facing away from the decoupling surface, containing at least one conversion material that converts the primary radiation into secondary radiation, and a mirror layer on the side of the wavelength conversion layer facing away from the semiconductor layer sequence, wherein the at least one conversion material is electrically conductive and/or embedded in an electrically conductive matrix material.

    Optoelectronic component and method for producing an optoelectronic component

    公开(公告)号:US10475778B2

    公开(公告)日:2019-11-12

    申请号:US15578240

    申请日:2016-05-24

    Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment the optoelectronic component includes a semiconductor chip subdivided into a plurality of pixels, the pixels being arranged next to one another in a lateral direction and being configured to be activated individually and independently and a metallic connecting element having an upper side and an underside, the connecting element including a contiguous metallic connecting layer, which is completely passed through by a plurality of first metallic through-connections arranged next to one another in the lateral direction, wherein the first through-connections are electrically insulated and spaced from the connecting layer by insulating regions, wherein each first through-connection is unambiguously assigned to one pixel, is electrically-conductively connected to this pixel and forms a first electrical contact to this pixel, and wherein the semiconductor chip is connected by the connecting element to a carrier.

    Semiconductor component having a small structural height

    公开(公告)号:US10411168B2

    公开(公告)日:2019-09-10

    申请号:US14779818

    申请日:2014-03-24

    Abstract: An optoelectronic semiconductor component includes a semiconductor chip having a semiconductor layer sequence including an active region that generates radiation; a radiation exit surface running parallel to the active region; a mounting side surface that fixes the semiconductor component and runs obliquely or perpendicularly to the radiation exit surface and at which at least one contact area for external electrical contacting is accessible; a molded body molded onto the semiconductor chip in places and forming the mounting side surface at least in regions; and a contact track arranged on the molded body and electrically conductively connecting the semiconductor chip to the at least one contact area.

    Light-emitting device and method for producing a light-emitting device

    公开(公告)号:US10388836B2

    公开(公告)日:2019-08-20

    申请号:US15302029

    申请日:2015-03-18

    Abstract: A light-emitting device includes a light-emitting semiconductor component that emits first light in a first wavelength range during operation A wavelength conversion element converts the first light at least partly into second light in a second wavelength range is arranged in the beam path of the first light. The second wavelength range differs from the first wavelength range. The wavelength conversion element includes nanoparticles containing organic luminescent molecules in a basic material formed from an SiO2-based material. A method for producing a light-emitting device is furthermore specified.

    Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

    公开(公告)号:US10236426B2

    公开(公告)日:2019-03-19

    申请号:US15473918

    申请日:2017-03-30

    Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment, the component includes a carrier, a multi-pixel semiconductor chip that emits electromagnetic radiation during operation, wherein the semiconductor chip is arranged on the carrier, and wherein the semiconductor chip has a plurality of individually activatable pixels capable of generating primary radiation and a wavelength conversion element for at least partially converting the primary radiation emitted from the semiconductor chip into electromagnetic secondary radiation, wherein an active zone of the multi-pixel semiconductor chip extends continuously over the plurality of pixels, and wherein the wavelength conversion element is implemented in one piece.

    Optoelectronic component and method for the production thereof

    公开(公告)号:US09847467B2

    公开(公告)日:2017-12-19

    申请号:US15030652

    申请日:2014-10-27

    Abstract: A method of producing a contact element for an optoelectronic component includes providing an auxiliary carrier with a sacrificial layer arranged on a top side of the auxiliary carrier; providing a carrier structure having a top side and a rear side situated opposite the top side, wherein an insulation layer is arranged at the rear side of the carrier structure; connecting the sacrificial layer to the insulation layer by an electrically conductive connection layer; creating at least one blind hole extending from the top side of the carrier structure as far as the insulation layer; opening the insulation layer in a region of the at least one blind hole; arranging an electrically conductive material in the at least one blind hole; detaching the auxiliary carrier by separating the sacrificial layer; and patterning the electrically conductive connection layer.

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