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    PATTERN FORMATION METHODS
    45.
    发明申请
    PATTERN FORMATION METHODS 有权

    公开(公告)号：US20210200081A1

    公开(公告)日：2021-07-01

    申请号：US17110441

    申请日：2020-12-03

    Applicant: Rohm and Haas Electronic Materials LLC ,  Rohm and Haas Electronic Materials Korea Ltd.

    Inventor： Cheng-Bai XU ,  Cong Liu ,  James Field Cameron ,  Jae-Bong Lim ,  Xisen Hou ,  Jae-Hwan Sim

    IPC: G03F7/00 ,  G03F7/039 ,  G03F7/038

    Abstract: Pattern formation methods comprise: (a) forming an underlayer on a substrate, wherein the underlayer has a thickness of 5 microns or more; (b) forming a photoresist layer on the underlayer, wherein the photoresist layer is formed from a photoresist composition comprising a silicon-containing polymer, a photoacid generator, and a solvent, wherein the silicon-containing polymer comprises as polymerized units a monomer of formula (I): wherein: R1 is independently chosen from H, F, OH, C1-C6 alkyl, C1-C6 haloalkyl, C1-C6 hydroxy-haloalkyl, C1-C6 alkoxy, or C1-C6 haloalkoxy; R2 is independently chosen from H or F; R3 is independently chosen from H, F, CH3, CF3, CHF2, or CH2F; comprises an acid cleavable group; and m is an integer from 0 to 2; (c) patternwise exposing the photoresist layer to activating radiation; (d) developing the exposed photoresist layer to form a photoresist pattern; and (f) transferring the pattern of the photoresist pattern into the underlayer using the photoresist pattern as an etch mask. The invention has particular applicability in the formation of three-dimensional patterns such as staircase patterns used in the formation of semiconductor devices.

    PHOTORESIST TOPCOAT COMPOSITIONS AND METHODS OF PROCESSING PHOTORESIST COMPOSITIONS
    46.
    发明申请
    PHOTORESIST TOPCOAT COMPOSITIONS AND METHODS OF PROCESSING PHOTORESIST COMPOSITIONS 审中-公开

    公开(公告)号：US20200004152A1

    公开(公告)日：2020-01-02

    申请号：US16449955

    申请日：2019-06-24

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Irvinder KAUR ,  Cong Liu ,  Doris Kang ,  Chunyi Wu

    IPC: G03F7/11 ,  C08F220/28 ,  C08F220/38 ,  C09D133/16 ,  C09D133/14

    Abstract: Photoresist topcoat compositions comprise: a matrix polymer and a surface active polymer, wherein the surface active polymer comprises polymerized units of the following general formula (I): wherein: R1 represents a hydrogen atom, a halogen atom, a C1-C4 alkyl group, or a C1-C4 haloalkyl group; R2 independently represents a hydrogen atom or an optionally substituted alkyl group, wherein at least one R2 is not a hydrogen atom, wherein the R2 groups taken together optionally form a cyclic structure, and wherein the total number of carbon atoms for the R2 groups taken together is from 2 to 20; R3 represents an optionally substituted C1-C4 alkylene group, wherein an R2 group optionally forms a cyclic structure with R3; and R4 independently represents C1-C4 fluoroalkyl groups; wherein the total polymerized units of general formula (I) are present in the surface active polymer in an amount of 95 wt % or more based on total polymerized units of the surface active polymer; and wherein the surface active polymer is present in the composition in an amount of from 0.1 to 30 wt % based on total solids of the composition; and an organic-based solvent system comprising a plurality of organic solvents. The invention finds particular applicability in the manufacture of semiconductor devices.

    PHOTORESIST TOPCOAT COMPOSITIONS AND METHODS OF PROCESSING PHOTORESIST COMPOSITIONS
    48.
    发明申请
    PHOTORESIST TOPCOAT COMPOSITIONS AND METHODS OF PROCESSING PHOTORESIST COMPOSITIONS 审中-公开

    公开(公告)号：US20190235385A1

    公开(公告)日：2019-08-01

    申请号：US16245631

    申请日：2019-01-11

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Cong Liu ,  Doris H. Kang ,  Deyan Wang ,  Cheng-Bai Xu ,  Mingqi Li ,  Irvinder Kaur

    IPC: G03F7/11 ,  G03F7/038 ,  G03F7/09 ,  G03F7/16 ,  G03F7/00 ,  G03F7/40 ,  G03F7/20 ,  H01L21/027 ,  G03F7/38 ,  B05C11/08

    Abstract: Photoresist topcoat compositions, comprising: a first polymer comprising a first repeat unit of general formula (I) and a second repeat unit of general formula (II): wherein: R1 independently represents H, F or optionally fluorinated C1 to C4 alkyl; R2 represents optionally fluorinated linear, branched or cyclic C1 to C20 alkyl; L1 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; a second polymer comprising a first repeat unit of general formula (III) and a second repeat unit of general formula (IV): wherein: R3 independently represents H, F or optionally fluorinated C1 to C4 alkyl; R4 represents linear, branched or cyclic C1 to C20 alkyl; R5 represents linear, branched or cyclic C1 to C20 fluoroalkyl; L2 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; and a solvent. Coated substrates coated with the described topcoat compositions and methods of processing a photoresist composition are also provided. The invention finds particular applicability in the manufacture of semiconductor devices.

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