Abstract:
Provided are electrochemical cells that include a compound having the general formula wherein R1 is moiety associated with a lithium ion, X1 and X3 are unsubstituted methylene moieties, X2 and X4 are each independently selected from a substituted or unsubstituted methylene moiety, X is a substituted or unsubstituted C1-C10 alkylene moiety, arylene moiety or heteroarylene moiety, R2 is selected from Li, H, an alkyl moiety, or a heteroalkyl moiety, 0
Abstract:
Provided are ionic thermal acid generators comprising an anion of an aromatic sulfonic acid comprising one or more fluorinated alcohol group and a cation. Also provided are photoresist pattern trimming compositions that include an ionic thermal acid generator, a matrix polymer and a solvent, and methods of trimming a photoresist pattern using the trimming compositions. The thermal acid generators, compositions and methods find particular applicability in the manufacture of semiconductor devices.
Abstract:
Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the aromatic sulfonic acid is of general formula (I):
wherein: Ar1 represents an aromatic group; R1 independently represents a halogen atom, hydroxy, substituted or unsubstituted alkyl, substituted or unsubstituted heteroalkyl, substituted or unsubstituted carbocyclic aryl, substituted or unsubstituted heterocyclic aryl, substituted or unsubstituted alkoxy, or a combination thereof, wherein adjacent R1 groups together optionally form a fused ring structure with Ar1; a represents an integer of 2 or more; and b represents an integer of 1 or more, provided that a+b is at least 3 and is not greater than the total number of available aromatic carbon atoms of Ar1, and two or more of R1 are independently a fluorine atom or a fluoroalkyl group bonded directly to an aromatic ring carbon atom.
Abstract:
Provided are ionic thermal acid generators comprising an anion of an aromatic sulfonic acid comprising one or more fluorinated alcohol group and a cation. Also provided are photoresist pattern trimming compositions that include an ionic thermal acid generator, a matrix polymer and a solvent, and methods of trimming a photoresist pattern using the trimming compositions. The thermal acid generators, compositions and methods find particular applicability in the manufacture of semiconductor devices.
Abstract:
Photoresist pattern trimming compositions are provided. The compositions comprise: a matrix polymer, an aromatic sulfonic acid and a solvent, wherein the aromatic sulfonic acid comprises one or more fluorinated alcohol group. Also provided are methods of trimming a photoresist pattern using the trimming compositions. The compositions and methods find particular applicability in the manufacture of semiconductor devices.
Abstract:
A method of purifying crude, oil-soluble sulfonic acids is disclosed, wherein the method comprises contacting a volatile hydrocarbon solution of crude, oil-soluble sulfonic acids with 2methoxyethanol or a mixture of water and 2-methoxyethanol. Primarily, the term ''''purifying'''' means removal of sulfuric acid and sulfur oxides.