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公开(公告)号：US20180158674A1
公开(公告)日：2018-06-07
申请号：US15802089
申请日：2017-11-02
Applicant: Rohm and Haas Electronic Materials LLC
Inventor： Shintaro Yamada , Li Cui , Christopher Gilmore , Joshua A. Kaitz , Sheng Liu , James F. Cameron , Suzanne M. Coley
IPC: H01L21/027 , G03F7/11 , C09D171/00
CPC classification number: H01L21/0276 , C09D171/00 , G03F7/0752 , G03F7/091 , G03F7/094 , G03F7/11 , G03F7/16 , G03F7/20 , G03F7/30 , H01L21/0332 , H01L21/3065 , H01L21/3081 , H01L21/31116 , H01L21/31138
Abstract: Aromatic resin polymers and compositions containing them are useful as underlayers in semiconductor manufacturing processes.
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公开(公告)号：US20190203065A1
公开(公告)日：2019-07-04
申请号：US16222064
申请日：2018-12-17
Applicant: Rohm and Haas Electronic Materials LLC
Inventor： Irvinder Kaur , Chunyi Wu , Joshua A. Kaitz , Mingqi Li , Doris Kang , Xisen Hou , Cong Liu
IPC: C09D133/02 , C09D133/06 , G03F7/004 , G03F7/11 , G03F7/16 , G03F7/20 , G03F7/32
CPC classification number: C09D133/02 , C09D133/06 , G03F7/0046 , G03F7/11 , G03F7/162 , G03F7/2041 , G03F7/32
Abstract: Photoresist topcoat compositions, comprising: a first polymer that is aqueous base soluble and is present in an amount of from 70 to 99 wt % based on total solids of the composition; a second polymer comprising a repeat unit of general formula (IV) and a repeat unit of general formula (V): wherein: R5 independently represents H, halogen atom, C1-C3 alkyl, or C1-C3 haloalkyl; R6 represents linear, branched or cyclic C1 to C20 fluoroalkyl; R7 represents linear, branched or cyclic C1 to C20 fluoroalkyl; L3 represents a multivalent linking group; and m is an integer of from 1 to 5; wherein the second polymer is free of non-fluorinated side chains; and wherein the second polymer is present in an amount of from 1 to 30 wt % based on total solids of the composition and a solvent. The invention finds particular applicability in the manufacture of semiconductor devices.
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公开(公告)号：US20180157175A1
公开(公告)日：2018-06-07
申请号：US15802094
申请日：2017-11-02
Applicant: Rohm and Haas Electronic Materials LLC
Inventor： Sheng Liu , Shintaro Yamada , James F. Cameron , Li Cui , Suzanne M. Coley , Joshua A. Kaitz , Keren Zhang
CPC classification number: G03F7/0384 , G03F7/0752 , G03F7/091 , G03F7/094 , G03F7/11
Abstract: Polyarylene resins and compositions containing them are useful as underlayers in semiconductor manufacturing processes.
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公开(公告)号：US12234369B2
公开(公告)日：2025-02-25
申请号：US16222064
申请日：2018-12-17
Applicant: Rohm and Haas Electronic Materials LLC
Inventor： Irvinder Kaur , Chunyi Wu , Joshua A. Kaitz , Mingqi Li , Doris Kang , Xisen Hou , Cong Liu
IPC: G03F7/004 , C09D133/02 , C09D133/06 , C09D133/08 , G03F7/11 , G03F7/16 , G03F7/20 , G03F7/32
Abstract: Photoresist topcoat compositions, comprising: a first polymer that is aqueous base soluble and is present in an amount of from 70 to 99 wt % based on total solids of the composition; a second polymer comprising a repeat unit of general formula (IV) and a repeat unit of general formula (V): wherein: R5 independently represents H, halogen atom, C1-C3 alkyl, or C1-C3 haloalkyl; R6 represents linear, branched or cyclic C1 to C20 fluoroalkyl; R7 represents linear, branched or cyclic C1 to C20 fluoroalkyl; L3 represents a multivalent linking group; and m is an integer of from 1 to 5; wherein the second polymer is free of non-fluorinated side chains; and wherein the second polymer is present in an amount of from 1 to 30 wt % based on total solids of the composition and a solvent. The invention finds particular applicability in the manufacture of semiconductor devices.
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Patent Agency Ranking
公开(公告)号：US20190204741A1
公开(公告)日：2019-07-04
申请号：US16211482
申请日：2018-12-06
Applicant: Rohm and Haas Electronic Materials LLC
Inventor： Joshua A. Kaitz , Chunyi Wu , Irvinder Kaur , Mingqi Li , Doris Kang , Xisen Hou , Cong Liu
IPC: G03F7/11 , G03F7/16 , G03F7/20 , G03F7/38 , G03F7/32 , C09D133/14 , C09D133/08 , C09D133/16 , C08F220/28 , C08F220/24 , C08F220/18 , C08F220/06 , C09D133/02
CPC classification number: G03F7/11 , C08F220/06 , C08F220/18 , C08F220/24 , C08F220/28 , C08F2220/1808 , C08F2220/281 , C08F2220/282 , C08F2220/283 , C08F2220/286 , C09D133/02 , C09D133/08 , C09D133/14 , C09D133/16 , G03F7/16 , G03F7/168 , G03F7/2041 , G03F7/322 , G03F7/38
Abstract: Photoresist topcoat compositions comprise: an aqueous base soluble polymer comprising as polymerized units a monomer of the following general formula (I): wherein: R1 is chosen from H, halogen atom, C1-C3 alkyl, or C1-C3 haloalkyl; R2 is independently chosen from substituted or unsubstituted C1-C12 alkyl or substituted or unsubstituted C5-C18 aryl; R3 and R4 are independently H, substituted or unsubstituted C1-C12 alkyl, substituted or unsubstituted C5-C18 aryl; X is a C2-C6 substituted or unsubstituted alkylene group; wherein X can optionally comprise one or more rings and together with R2 can optionally form a ring; L1 is a single bond or a linking group; p is an integer of from 1 to 50; and q is an integer of from 1 to 5; and a solvent. Substrates coated with the described topcoat compositions and methods of processing a photoresist composition are also provided. The invention finds particular applicability in the manufacture of semiconductor devices.
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公开(公告)号：US11175581B2
公开(公告)日：2021-11-16
申请号：US15802094
申请日：2017-11-02
Applicant: Rohm and Haas Electronic Materials LLC
Inventor： Sheng Liu , Shintaro Yamada , James F. Cameron , Li Cui , Suzanne M. Coley , Joshua A. Kaitz , Keren Zhang
Abstract: Polyarylene resins and compositions containing them are useful as underlayers in semiconductor manufacturing processes.
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公开(公告)号：US10790146B2
公开(公告)日：2020-09-29
申请号：US15802089
申请日：2017-11-02
Applicant: Rohm and Haas Electronic Materials LLC
Inventor： Shintaro Yamada , Li Cui , Christopher Gilmore , Joshua A. Kaitz , Sheng Liu , James F. Cameron , Suzanne M. Coley
IPC: H01L21/027 , G03F7/11 , C09D171/00 , H01L21/033 , H01L21/308 , G03F7/09 , G03F7/075 , G03F7/30 , G03F7/16 , G03F7/20 , H01L21/311 , H01L21/3065
Abstract: Aromatic resin polymers and compositions containing them are useful as underlayers in semiconductor manufacturing processes.
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公开(公告)号：US10133179B2
公开(公告)日：2018-11-20
申请号：US15224503
申请日：2016-07-29
Inventor： Jin Wuk Sung , Mingqi Li , Jong Keun Park , Joshua A. Kaitz , Vipul Jain , Chunyi Wu , Phillip D. Hustad
IPC: C09D153/02 , G03F7/40 , C09D153/00 , G03F7/038 , G03F7/20 , G03F7/32 , G03F7/38 , G03F7/039
Abstract: A pattern treatment method, comprising: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises: a block copolymer and an organic solvent, wherein the block copolymer comprises: (i) a first block comprising a first unit formed from 4-vinyl-pyridine, and (ii) a second block comprising a first unit formed from a vinyl aromatic monomer; and (c) removing residual pattern shrink composition from the substrate, leaving a coating of the block copolymer over the surface of the patterned feature, thereby providing a reduced pattern spacing as compared with a pattern spacing of the patterned feature prior to coating the pattern treatment composition. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.
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公开(公告)号：US20180031975A1
公开(公告)日：2018-02-01
申请号：US15224503
申请日：2016-07-29
Inventor： Jin Wuk Sung , Mingqi Li , Jong Keun Park , Joshua A. Kaitz , Vipul Jain , Chunyi Wu , Phillip D. Hustad
CPC classification number: G03F7/405 , C09D153/00 , G03F7/038 , G03F7/0397 , G03F7/20 , G03F7/32 , G03F7/325 , G03F7/38
Abstract: A pattern treatment method, comprising: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises: a block copolymer and an organic solvent, wherein the block copolymer comprises: (i) a first block comprising a first unit formed from 4-vinyl-pyridine, and (ii) a second block comprising a first unit formed from a vinyl aromatic monomer; and (c) removing residual pattern shrink composition from the substrate, leaving a coating of the block copolymer over the surface of the patterned feature, thereby providing a reduced pattern spacing as compared with a pattern spacing of the patterned feature prior to coating the pattern treatment composition. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.
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