公开(公告)号：US6072162A

公开(公告)日：2000-06-06

申请号：US352323

申请日：1999-07-12

申请人： Shinichi Ito ,  Katsuya Okumura

发明人： Shinichi Ito ,  Katsuya Okumura

IPC分类号： G03F7/16 ,  H01L21/00 ,  H01L21/027 ,  H05B3/26 ,  H05B3/68 ,  C23C16/00

CPC分类号： H01L21/67109 ,  H01L21/67103 ,  H05B3/262 ,  H05B3/68 ,  H05B2203/022

摘要： A device for heating a substrate comprises a heating plate for heating a to-be-treated substrate, substrate holding section for holding the to-be-treated substrate on the heating plate, a gas stream producing section for producing a gas stream in a space above the heating plate in one direction along a surface of the heating plate, and a heater provided at the heating plate, and having pattern symmetrical with respect to a gas stream flowing through the center of the heating plate, wherein the heater comprises a first heater constituting section having heater elements arranged in the form of a ring, and a second heater constituting section located inside the first heater constituting section and having heater elements which are arranged so that more heat is generated in an upstream side of the gas stream than in a downstream side thereof.

摘要翻译： 用于加热基板的装置包括用于加热被处理基板的加热板，用于将待处理基板保持在加热板上的基板保持部分，用于在空间中产生气流的气流产生部分 在加热板的一个方向上方，以及设置在加热板上的加热器，并且具有相对于流过加热板的中心的气流对称的图案，其中加热器包括第一加热器 具有以环形形式设置的加热器元件的构成部分和位于第一加热器构成部分内部的第二加热器构成部分，并且具有加热器元件，其布置成在气流的上游侧产生比在 下游侧。

公开(公告)号：US6059880A

公开(公告)日：2000-05-09

申请号：US995990

申请日：1997-12-22

申请人： Takahiro Kitano ,  Katsuya Okumura ,  Shinichi Ito

发明人： Takahiro Kitano ,  Katsuya Okumura ,  Shinichi Ito

IPC分类号： B05C11/08 ,  G03F7/16 ,  H01L21/027 ,  B05C5/00

CPC分类号： G03F7/162

摘要： A coating apparatus according to the invention comprises a spin chuck for holding a substrate, resist solution tanks which contain a primary resist solution, a thinner tank which contains thinner, a confluence valve communicating with the thinner tank and the resist solution tanks, first pumps each for supplying the confluence valve with the primary resist solution from a corresponding one of the resist solution tanks, a second pump for supplying thinner from the thinner tank to the confluence valve, a mixer for mixing the primary treatment solution and thinner supplied from the confluence valve, a nozzle for applying a solution from the mixer, to the substrate held by the spin chuck, and a controller for controlling the first and second pumps to adjust the mixture ratio of the primary resist solution to be supplied from each of the resist solution tanks to the confluence valve, to thinner to be supplied from the thinner tank to the confluence valve.

摘要翻译： 根据本发明的涂覆装置包括：用于保持基底的旋转卡盘，含有主抗蚀剂溶液的抗蚀剂溶液罐，含有较薄的罐的较薄的罐，与较薄罐相连的汇流阀和抗蚀剂溶液罐，首先泵送每个 用于从所述抗蚀剂溶液罐中的相应的一个供应所述汇流阀，用于从所述较薄罐向所述汇流阀供应较薄的第二泵，用于混合所述主处理溶液和从所述汇流阀供应的稀释剂的混合器 用于将来自混合器的溶液施加到由旋转卡盘保持的基板的喷嘴，以及用于控制第一和第二泵以调节要从每个抗蚀剂溶液罐供应的主抗蚀剂溶液的混合比率的控制器 到合流阀，从较薄的罐到合流阀更薄。

公开(公告)号：US6048791A

公开(公告)日：2000-04-11

申请号：US50357

申请日：1998-03-31

申请人： Tomio Katata ,  Katsuya Okumura

发明人： Tomio Katata ,  Katsuya Okumura

IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/44 ,  H01L21/4763

CPC分类号： H01L21/28061

摘要： A first TiSix layer is deposited on a polysilicon layer, then a silicon substrate is annealed in a vacuum atmosphere to crystallize the TiSix layer, and a second TiSix layer is provided on the first crystallized TiSix layer.

摘要翻译： 第一TiSix层沉积在多晶硅层上，然后将硅衬底在真空气氛中退火以使TiSix层结晶，并且在第一结晶TiSix层上提供第二TiSix层。

公开(公告)号：US5989759A

公开(公告)日：1999-11-23

申请号：US30886

申请日：1998-02-26

申请人： Atsushi Ando ,  Kazuyoshi Sugihara ,  Katsuya Okumura ,  Tetsuro Nakasugi

发明人： Atsushi Ando ,  Kazuyoshi Sugihara ,  Katsuya Okumura ,  Tetsuro Nakasugi

IPC分类号： G03F7/20 ,  H01J37/304 ,  H01J37/317 ,  H01L21/027 ,  G03F9/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/7045 ,  G03F7/70675 ,  H01J37/3045 ,  H01J37/3174 ,  Y10S430/143

摘要： To achieve down-sizing and improvements of throughputs, light exposure and charge beam exposure are sometimes used together. In case of performing exposure of a desired pattern in a plurality of stages, a positional displacement of each of exposure patterns in the stages leads to a decrease in exposure accuracy. According to the present invention, in case of forming a fine pattern by exposure after exposure of a rough pattern, the exposure position of the rough pattern is adjusted, based on a latent image of the rough pattern which has been subjected to exposure. As a result, a positional displacement between rough and fine patterns is reduced so that a desired pattern can be formed with high accuracy.

摘要翻译： 为了实现规模缩小和吞吐量的提高，有时一起使用曝光和电荷束曝光。 在多级中进行期望图案的曝光的情况下，各级的曝光图案的位置偏移导致曝光精度降低。 根据本发明，在粗糙图案曝光后通过曝光形成精细图案的情况下，基于经受曝光的粗糙图案的潜像，调整粗糙图案的曝光位置。 结果，粗图案和精细图案之间的位置偏移减小，从而可以高精度地形成期望的图案。

公开(公告)号：US5950099A

公开(公告)日：1999-09-07

申请号：US629442

申请日：1996-04-09

申请人： Naohiro Shoda ,  Katsuya Okumura

发明人： Naohiro Shoda ,  Katsuya Okumura

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L23/52 ,  H01L21/265

CPC分类号： H01L21/28512

摘要： A method for fabricating a damascene interconnect includes the steps of depositing a metal layer of the surface of an insulating film; etching the metal layer and the insulating film to form an insulating groove; depositing a silicon layer on an upper surface on the metal layer and on each sidewall and a bottom of the insulating groove; annealing the silicon layer and the metal layer to form a silicide layer; implanting ions in the bottom of the insulating groove; and depositing an interconnect material in the insulating groove using selective chemical vapor deposition. In one embodiment, the metal layer is a titanium layer, the interconnect material is tungsten, and the implanted ions are arsenic ions.

摘要翻译： 一种用于制造镶嵌互连的方法包括沉积绝缘膜表面的金属层的步骤; 蚀刻金属层和绝缘膜以形成绝缘槽; 在金属层的上表面和绝缘槽的每个侧壁和底部上沉积硅层; 退火硅层和金属层以形成硅化物层; 将离子注入绝缘槽的底部; 以及使用选择性化学气相沉积在所述绝缘槽中沉积互连材料。 在一个实施例中，金属层是钛层，互连材料是钨，注入的离子是砷离子。

公开(公告)号：US5888876A

公开(公告)日：1999-03-30

申请号：US628094

申请日：1996-04-09

申请人： Jun-ichi Shiozawa ,  Yoshitaka Tsunashima ,  Katsuya Okumura

发明人： Jun-ichi Shiozawa ,  Yoshitaka Tsunashima ,  Katsuya Okumura

IPC分类号： H01L21/76 ,  H01L21/334 ,  H01L21/763 ,  H01L21/768 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/20

CPC分类号： H01L29/66181 ,  H01L21/763 ,  H01L21/76877

摘要： A method of filling one or more trenches formed in a silicon substrate includes the steps of forming a thin polycrystalline silicon film in a trench such that the thin polycrystalline silicon film is sufficiently thin so as to not close the trench; forming an amorphous silicon film on thin polycrystalline film and the surface of the substrate and in the trenches; and annealing the amorphous silicon film such that the amorphous silicon layer migrates to fill the trenches to a first level. The deposition and annealing steps are performed in ambient atmospheres having low partial pressures of H.sub.2 O and O.sub.2, the annealing temperature is higher than the deposition temperature, and the annealing pressure is greater than the deposition pressure.

摘要翻译： 填充形成在硅衬底中的一个或多个沟槽的方法包括以下步骤：在沟槽中形成薄多晶硅膜，使得薄多晶硅膜足够薄以便不关闭沟槽; 在薄多晶膜和衬底的表面和沟槽中形成非晶硅膜; 以及使所述非晶硅膜退火，使得所述非晶硅层迁移以将所述沟槽填充至第一水平。 沉积和退火步骤在具有低的H 2 O和O 2分压的环境气氛中进行，退火温度高于沉积温度，并且退火压力大于沉积压力。

公开(公告)号：US5849089A

公开(公告)日：1998-12-15

申请号：US818750

申请日：1997-03-14

申请人： Yoshitaka Tsunashima ,  Katsuya Okumura

发明人： Yoshitaka Tsunashima ,  Katsuya Okumura

IPC分类号： C23C16/44 ,  C23C16/40 ,  C23C16/448 ,  H01L21/205 ,  H01L21/31 ,  C23C16/00

CPC分类号： C23C16/4483 ,  C23C16/402 ,  C23C16/4485

摘要： Inside a first cylinder for structuring an evaporator, a second cylinder is provided. The second cylinder has an undulated surface and a plurality of fine holes are provided on this surface. A liquid TEOS is contained in a first space positioned between the first cylinder and the second cylinder, and a second space positioned inside the second cylinder is filled with a gas TEOS evaporated from the fine holes. The pressure of the gas TEOS is set to be almost equal to the pressure of the liquid TEOS.

摘要翻译： 在用于构造蒸发器的第一气缸内部，设置有第二气缸。 第二圆柱体具有波状表面，并且在该表面上设置有多个细孔。 液体TEOS容纳在位于第一气缸和第二气缸之间的第一空间中，并且位于第二气缸内部的第二空间填充有从细孔蒸发的气体TEOS。 气体TEOS的压力被设定为几乎等于液体TEOS的压力。

公开(公告)号：US5818217A

公开(公告)日：1998-10-06

申请号：US222392

申请日：1994-04-04

申请人： Fumio Komatsu ,  Katsuya Okumura ,  Motosuke Miyoshi

发明人： Fumio Komatsu ,  Katsuya Okumura ,  Motosuke Miyoshi

IPC分类号： G21K5/04 ,  H01J37/02 ,  H01J37/147 ,  H01J37/302 ,  H01L21/66 ,  G01R31/305

CPC分类号： H01J37/3026 ,  H01J37/026

摘要： To prevent electric charge up from being accumulated on the plane scanned by an electron beam and further to improve the S/N ratio, an electron beam irradiating apparatus comprising: position information signal outputting section for outputting position information signals, in sequence to designate positions at which an electron beam is irradiated on a plane scanned by the electron beam, so as to designate the irradiation positions at random; and irradiation controller for-controlling the electron beam to irradiate the electron beam at the irradiation positions in response to the outputted position information signals. Further, to integrate an photoelectric signal over a sufficient time interval within the period of the pixel clock signal, the electric signal detecting circuit comprises a plurality of sample hold circuits and a selecting circuit for selecting and activating the sample hold circuits in sequence.

摘要翻译： 为了防止电荷积累在由电子束扫描的平面上并进一步提高S / N比，电子束照射装置包括：位置信息信号输出部分，用于输出位置信息信号，以依次指定位置信息信号 电子束照射在由电子束扫描的平面上，以便随机地指定照射位置; 以及照射控制器，用于响应于输出的位置信息信号，控制电子束在照射位置照射电子束。 此外，为了在像素时钟信号的周期内在足够的时间间隔内积分光电信号，电信号检测电路包括多个采样保持电路和用于依次选择和激活采样保持电路的选择电路。

公开(公告)号：US5721173A

公开(公告)日：1998-02-24

申请号：US805314

申请日：1997-02-25

申请人： Hiroyuki Yano ,  Katsuya Okumura

发明人： Hiroyuki Yano ,  Katsuya Okumura

IPC分类号： H01L21/76 ,  H01L21/762 ,  H01L21/763 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L21/76224 ,  H01L21/763

摘要： A method of forming a trench isolation structure is provided in which a film is formed on a semiconductor substrate and a trench is formed in the semiconductor substrate through the film. A dielectric material is deposited in the trench and on the film. An etch resistant film is formed on the portions of the dielectric material in the trench and on exposed portions of the film at edge regions of the trench. The dielectric material on the film is selectively removed and the etch resistant film remaining on the dielectric material in the trench is selectively removed.

摘要翻译： 提供一种形成沟槽隔离结构的方法，其中在半导体衬底上形成膜，并且通过膜在半导体衬底中形成沟槽。 电介质材料沉积在沟槽和膜上。 在沟槽中的介电材料的部分和沟槽的边缘区域的膜的暴露部分上形成耐蚀刻膜。 选择性地去除膜上的电介质材料，并且选择性地去除留在沟槽中的电介质材料上的耐蚀刻膜。

公开(公告)号：US5660744A

公开(公告)日：1997-08-26

申请号：US492322

申请日：1995-06-19

申请人： Makoto Sekine ,  Keiji Horioka ,  Haruo Okano ,  Katsuya Okumura ,  Isahiro Hasegawa ,  Masaki Narita

发明人： Makoto Sekine ,  Keiji Horioka ,  Haruo Okano ,  Katsuya Okumura ,  Isahiro Hasegawa ,  Masaki Narita

IPC分类号： H01J37/32 ,  B23K10/00

CPC分类号： H01J37/32623 ,  H01J37/3266

摘要： A surface processing apparatus comprises a container provided with a first electrode and a second electrode disposed opposite to the first electrode for supporting a substrate to be processed and filled with a gas at a reduced pressure, an electric field generator for generating an electric field between the first and second electrodes, and a magnetic field generator for generating a magnetic field in the vacuum container. The magnetic field generator comprises a plurality of magnet element groups arranged in a circle around the container so as to form a ring, each of the magnet element groups having an axis directed to a center of the circle and a synthetic magnetization direction and comprising one or a plurality of magnet elements having respective magnetization directions which are synthesized to be equal to the synthetic magnetization direction of the each of the magnetic element groups. One of the magnet element groups is so disposed that the synthetic magnetization direction thereof coincides with the axis thereof, and each of the magnet element groups other than the one magnet element group is so disposed that an angle of the synthetic magnetization direction thereof relative to the synthetic magnetization direction of the one magnet element group is substantially twice an angle of the axis thereof relative to the axis of the one magnet element group.

摘要翻译： 表面处理装置包括：容器，其设置有第一电极和与第一电极相对设置的第二电极，用于支撑待处理的基板并在减压下填充气体;电场发生器，用于在第一电极之间产生电场; 第一和第二电极以及用于在真空容器中产生磁场的磁场发生器。 磁场发生器包括围绕容器布置成圆形的多个磁体元件组，以便形成环，每个磁体元件组具有指向圆心的合成磁化方向的轴线，并包括一个或多个 多个磁体元件，其各自的磁化方向被合成为等于每个磁性元件组的合成磁化方向。 一个磁体元件组被设置成合成磁化方向与其轴线重合，并且除了一个磁体元件组之外的每个磁体元件组被设置成使得其合成磁化方向相对于 一个磁体元件组的合成磁化方向基本上是相对于一个磁体元件组的轴线的轴的两倍。